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111. 发明授权

US4518846A Heater assembly for molecular beam epitaxy furnace 失效
标题翻译：分子束外延炉加热器组件
公开(公告)号：US4518846A
公开(公告)日：1985-05-21
申请号：US619106
申请日：1984-06-11
申请人： John L. Freeouf , Thomas N. Jackson
发明人： John L. Freeouf , Thomas N. Jackson
IPC分类号： C30B23/08 , C23C14/24 , C23C14/26 , C23C14/56 , C30B23/06 , C30B25/08 , H01L21/203 , C23C13/12
CPC分类号： C30B23/066 , C23C14/243 , C23C14/56
摘要： In a molecular beam epitaxy furnace, a heater is described for heating the interior of an effusion cell. The heater includes an outer cylindrical sleeve having one end connected to receive a vacuum, and an opposite end extending into the furnace. An inner sleeve is provided coaxial with the outer cylindrical sleeve, one end of the inner sleeve being sealed with the opposite end of the cylindrical sleeve. The inner sleeve extends along a portion of the outer cylindrical sleeve providing an interior vacuum chamber. A heating element is disposed between the cylindrical sleeve and inner sleeve which heats the interior crucible receiving chamber and a crucible therein bearing semiconductor constituent material such that the semiconductor constituent material effuses without contamination from the heating element.
摘要翻译：在分子束外延炉中，描述了用于加热渗出室内部的加热器。加热器包括外圆柱形套筒，其一端连接以接收真空，另一端延伸到炉中。内套筒与外圆柱套筒同轴设置，内套筒的一端用圆柱套筒的相对端密封。内套筒沿着外圆柱形套筒的一部分延伸，提供内部真空室。加热元件设置在圆筒套筒和内套筒之间，该内套筒将内坩埚接收室和其中的坩埚加热在轴承半导体构成材料中，使得半导体构成材料在不受加热元件污染的情况下流出。

112. 发明授权

US3325392A Method of producing monocrystalline layers of silicon on monocrystalline substrates 失效
标题翻译：在单晶衬底上制造硅单晶层的方法
公开(公告)号：US3325392A
公开(公告)日：1967-06-13
申请号：US31419263
申请日：1963-10-07
申请人： SIEMENS AG
发明人： THEODOR RUMMEL
IPC分类号： C01B33/02 , C23C14/32 , C30B23/06 , H01L21/203
CPC分类号： C30B23/066 , C01B33/02 , C23C14/32 , C23C14/325 , H01L21/02381 , H01L21/02532 , H01L21/02576 , H01L21/02579 , H01L21/02631 , H01L21/02661 , Y10S148/017 , Y10S148/158 , Y10S148/169

113. 发明授权

US3158511A Monocrystalline structures including semiconductors and system for manufacture thereof 失效
标题翻译：包括半导体的单晶结构及其制造系统
公开(公告)号：US3158511A
公开(公告)日：1964-11-24
申请号：US1997559
申请日：1959-11-03
申请人： MOTOROLA INC
发明人： ACHILLE ROBILLARD JEAN JULES
IPC分类号： C30B23/06
CPC分类号： C30B23/066 , Y10S117/915 , Y10S148/025 , Y10S148/13 , Y10S148/135 , Y10S148/15 , Y10S148/158 , Y10S148/169

114. 发明授权

US09972968B2 Passivation of laser facets and systems for performing the same 有权
公开(公告)号：US09972968B2
公开(公告)日：2018-05-15
申请号：US15133334
申请日：2016-04-20
申请人： Trumpf Photonics, Inc.
发明人： Qiang Zhang , Haiyan An , Hans Georg Treusch
IPC分类号： H01S5/02 , H01S5/028 , H01S5/343 , H01S5/10 , H01J37/32 , C30B23/06 , C30B29/48 , C23C14/46
CPC分类号： H01S5/0282 , C23C14/021 , C23C14/46 , C23C14/568 , C30B23/02 , C30B23/066 , C30B29/48 , H01J37/32082 , H01J37/32743 , H01J37/32816 , H01J37/32889 , H01J37/32899 , H01J2237/327 , H01J2237/335 , H01S5/0281 , H01S5/0287 , H01S5/10 , H01S5/34313 , H01S5/4025
摘要： Methods of passivating at least one facet of a multilayer waveguide structure can include: cleaning, in a first chamber of a multi-chamber ultra-high vacuum (UHV) system, a first facet of the multilayer waveguide structure; transferring the cleaned multilayer waveguide structure from the first chamber to a second chamber of the multi-chamber UHV system; forming, in the second chamber, a first single crystalline passivation layer on the first facet; transferring the multilayer waveguide structure from the second chamber to a third chamber of the multi-chamber UHV system; and forming, in the third chamber, a first dielectric coating on the first single crystalline passivation layer, in which the methods are performed in an UHV environment of the multi-chamber UHV system without removing the multilayer waveguide structure from the UHV environment.

115. 发明申请

US20180057925A1 DEVICE FOR GROWING MONOCRYSTALLINE CRYSTAL 审中-公开
公开(公告)号：US20180057925A1
公开(公告)日：2018-03-01
申请号：US15353000
申请日：2016-11-16
申请人： NATIONAL CHUNG SHAN INSTITUTE OF SCIENCE AND TECHNOLOGY
发明人： DAI-LIANG MA , HSUEH-I CHEN , BO-CHENG LIN , CHENG-JUNG KO , YING-CONG ZHAO , CHIH-WEI KUO , SHU-YU YEH
IPC分类号： C23C14/24 , C30B23/02 , C30B23/06 , C30B29/36 , C30B29/40 , C23C14/06 , C23C14/26
CPC分类号： C23C14/243 , C23C14/0635 , C23C14/0641 , C23C14/26 , C30B23/00 , C30B23/002 , C30B23/025 , C30B23/06 , C30B23/066 , C30B29/36 , C30B29/403
摘要： A device for growing large-sized monocrystalline crystals, including a crucible adapted to grow crystals from a material source and with a seed crystal and including therein a seed crystal region, a growth chamber, and a material source region; a thermally insulating material disposed outside the crucible and below a heat dissipation component; and a plurality of heating components disposed outside the thermally insulating material to provide heat sources, wherein the heat dissipation component is of a heat dissipation inner diameter and a heat dissipation height which exceeds a thickness of the thermally insulating material.

116. 发明授权

US09856578B2 Methods of producing large grain or single crystal films 有权
公开(公告)号：US09856578B2
公开(公告)日：2018-01-02
申请号：US14256619
申请日：2014-04-18
申请人： Ratnakar D. Vispute , Andrew Seiser
发明人： Ratnakar D. Vispute , Andrew Seiser
IPC分类号： C30B23/06 , C30B29/16 , C23C14/08 , C23C14/30 , C23C14/52 , C23C14/54
CPC分类号： C30B23/066 , C23C14/081 , C23C14/30 , C23C14/52 , C23C14/541 , C30B29/16
摘要： Highly textured [111] oriented films such as MgO crystalline films are deposited by e-beam evaporation on ordinary soda-lime glass. Semiconductor films such as silicon can be deposited on these MgO films using eutectics at temperatures below the softening point of ordinary glass and having extremely high textured and strong [111] orientation. The invention may be used for efficient and cost effective solar cells, displays, etc.

117. 发明授权

US09845549B2 Method of manufacturing silicon carbide single crystal 有权
公开(公告)号：US09845549B2
公开(公告)日：2017-12-19
申请号：US14804438
申请日：2015-07-21
申请人： SUMITOMO ELECTRIC INDUSTRIES, LTD.
发明人： Shin Harada , Tsutomu Hori
IPC分类号： C30B23/06 , C30B29/36
CPC分类号： C30B23/066 , C30B29/36
摘要： A crucible having a top surface, a bottom surface opposite to the top surface, and a tubular side surface located between the top surface and the bottom surface, a resistive heater provided outside of the crucible and made of carbon, a source material provided in the crucible, and a seed crystal provided to face the source material in the crucible are prepared. A silicon carbide single crystal is grown on the seed crystal by sublimating the source material with the resistive heater. In the step of growing a silicon carbide single crystal, a value obtained by dividing a value of a current flowing through the resistive heater by a cross-sectional area of the resistive heater perpendicular to a direction in which the current flows is maintained at 5 A/mm2 or less.

118. 发明授权

US09799735B2 Method of manufacturing silicon carbide single crystal and silicon carbide single crystal substrate 有权
公开(公告)号：US09799735B2
公开(公告)日：2017-10-24
申请号：US15017235
申请日：2016-02-05
申请人： SUMITOMO ELECTRIC INDUSTRIES, LTD.
发明人： Tsubasa Honke , Kyoko Okita , Tomohiro Kawase , Tsutomu Hori
IPC分类号： B32B3/00 , H01L29/16 , C30B23/00 , C30B29/36 , C30B23/02 , C30B23/06 , H01L29/04
CPC分类号： H01L29/1608 , C30B23/00 , C30B23/002 , C30B23/025 , C30B23/066 , C30B29/36 , H01L29/045 , Y10T428/21
摘要： Quality of a silicon carbide single crystal is improved. A crucible having first and second sides is prepared. A solid source material for growing silicon carbide with a sublimation method is arranged on the first side. A seed crystal made of silicon carbide is arranged on the second side. The crucible is arranged in a heat insulating container. The heat insulating container has an opening facing the second side. The crucible is heated such that the solid source material sublimes. A temperature on the second side is measured through the opening in the heat insulating container. The opening has a tapered inner surface narrowed toward the outside of the heat insulating container.

119. 发明申请

US20170141285A1 Nanoscale Device Comprising an Elongated Crystalline Nanostructure 审中-公开
公开(公告)号：US20170141285A1
公开(公告)日：2017-05-18
申请号：US15322701
申请日：2015-07-02
申请人： University of Copenhagen
发明人： Peter Krogstrup , Thomas Sand Jespersen , Charles M. Marcus , Jesper Nygård
IPC分类号： H01L39/02 , C30B23/06 , H01L39/24 , C23C14/28 , C30B29/62 , H01L39/22 , C30B11/12 , C30B23/02
CPC分类号： H01L39/02 , B82Y10/00 , B82Y40/00 , C23C14/28 , C30B11/12 , C30B23/025 , C30B23/066 , C30B29/62 , H01L29/0673 , H01L29/413 , H01L29/437 , H01L29/66469 , H01L39/025 , H01L39/125 , H01L39/221 , H01L39/223 , H01L39/228 , H01L39/2432 , H01L39/2493 , Y10S977/762 , Y10S977/81 , Y10S977/891 , Y10S977/938 , Y10S977/943
摘要： The present disclosure relates to nanoscale device comprising an elongated crystalline nanostructure, such as a nanowire crystal, a nanowhisker crystal or a nanorod crystal, and a method for producing thereof. One embodiment relates to a nanoscale device comprising an elongated crystalline semiconductor nanostructure, such as a nanowire (crystal) or nanowhisker (crystal) or nanorod (crystal), having a plurality of substantially plane side facets, a crystalline structured first facet layer of a superconductor material covering at least a part of one or more of said side facets, and a second facet layer of a superconductor material covering at least a part of the first facet layer, the superconductor material of the second facet layer being different from the superconductor material of the first facet layer, wherein the crystalline structure of the semiconductor nanostructure is epitaxially matched with the crystalline structure of the first facet layer on the interface between the two crystalline structures.

120. 发明授权

US09605358B2 Silicon carbide substrate, silicon carbide ingot, and methods for manufacturing silicon carbide substrate and silicon carbide ingot 有权
公开(公告)号：US09605358B2
公开(公告)日：2017-03-28
申请号：US15213836
申请日：2016-07-19
申请人： SUMITOMO ELECTRIC INDUSTRIES, LTD.
发明人： Makoto Sasaki
IPC分类号： H01L29/16 , C30B29/36 , C30B33/00 , C30B23/06
CPC分类号： C30B29/36 , C30B23/025 , C30B23/06 , C30B23/066 , C30B33/00 , H01L29/1608
摘要： A silicon carbide substrate, a silicon carbide ingot, and methods for manufacturing the silicon carbide substrate and the silicon carbide ingot capable of improving a yield of a semiconductor device having silicon carbide as constituent material are provided. In the silicon carbide substrate, patterns formed by crossing straight lines extending along the direction and being observable by means of an X-ray topography are present at a number density of less than or equal to 0.1 patterns/cm2 on one main surface. As described above, in the silicon carbide substrate, the number density of the crossing patterns present on the main surface is reduced to less than or equal to 0.1 patterns/cm2. Therefore, when the semiconductor device is manufactured with use of a silicon carbide substrate, a lowering of a yield caused by the crossing patterns can be suppressed.

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