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111. 发明申请

US20060077595A1 Magnetoresistive effect element, and magnetic head and magnetic reproducing apparatus including the same 有权
公开(公告)号：US20060077595A1
公开(公告)日：2006-04-13
申请号：US11248203
申请日：2005-10-13
申请人： Hiromi Yuasa , Hideaki Fukuzawa , Hitoshi Iwasaki
发明人： Hiromi Yuasa , Hideaki Fukuzawa , Hitoshi Iwasaki
IPC分类号： G11B5/127 , G11B5/33
CPC分类号： B82Y25/00 , B82Y10/00 , G01R33/093 , G11B5/3929 , G11B5/398 , G11B2005/3996
摘要： A spin-valve magnetoresistive effect film includes a magnetization fixed layer, a magnetization free layer, and an intermediate layer interposed therebetween. The intermediate layer has a conduction part disposed in an insulation layer and made of a magnetic metal material. The ferromagnetic film stacked on an upper side of the intermediate layer, out of ferromagnetic films constituting the magnetization fixed layer and the magnetization free layer has a perpendicular orientation part which is disposed above the conduction part and whose crystal growth direction is substantially perpendicular to a film plane, and a non-perpendicular orientation part which exists in a portion other than the perpendicular orientation part. A magnetoresistive effect element has a pair of electrodes passing a sense current in a direction perpendicular to the film plane of the magnetoresistive effect film.

112. 发明申请

US20050168887A1 Magnetoresistive element, magnetic head, magnetic reproducing apparatus, and magnetic memory 有权
标题翻译：磁阻元件，磁头，磁再现装置和磁存储器
公开(公告)号：US20050168887A1
公开(公告)日：2005-08-04
申请号：US11017965
申请日：2004-12-22
申请人： Hiromi Yuasa , Hideaki Fukuzawa , Susumu Hashimoto , Hitoshi Iwasaki
发明人： Hiromi Yuasa , Hideaki Fukuzawa , Susumu Hashimoto , Hitoshi Iwasaki
IPC分类号： G11B5/39 , G11C11/16 , H01F10/16 , H01F10/32 , H01L21/8246 , H01L27/105 , H01L43/08 , H01L43/10 , G11B5/33 , G11B5/127
CPC分类号： H01F10/3272 , B82Y25/00 , G11B5/39 , G11C11/16 , H01F10/3259 , H01F10/3263 , H01F41/325
摘要： A magnetoresistive element includes a magnetoresistive film having a magnetization pinned layer whose magnetization is substantially pinned to one direction, a nonmagnetic intermediate layer, and a magnetization free layer whose magnetization is changed in direction depending on an external magnetic field, in which the magnetization pinned layer or nonmagnetic intermediate layer includes an insulator, and a pair of electrodes electrically connected to the magnetoresistive film so as to supply a sense current in a direction substantially perpendicular to a plane of the magnetoresistive film. The magnetization free layer includes a body-centered cubic layer with a body-centered cubic structure, and the thickness of the body-centered cubic layer is 2 nm or more.
摘要翻译：磁阻元件包括磁阻膜，其具有磁化被固定在一个方向上的磁化固定层，非磁性中间层和磁化自由层，其磁化方向取决于外部磁场而变化，其中磁化固定层或非磁性中间层包括绝缘体和电连接到磁阻膜的一对电极，以便在基本垂直于磁阻膜的平面的方向上提供感测电流。无磁化层包括以体心立方结构的体心立方层，体心立方层的厚度为2nm以上。

113. 发明授权

US09032808B2 Magneto-resistive effect device, magnetic head gimbal assembly, magnetic recording/reproduction device, strain sensor, pressure sensor, blood pressure sensor, and structural health monitoring sensor 有权
标题翻译：磁阻效应装置，磁头万向节装配，磁记录/再现装置，应变传感器，压力传感器，血压传感器和结构健康监测传感器
公开(公告)号：US09032808B2
公开(公告)日：2015-05-19
申请号：US13246069
申请日：2011-09-27
申请人： Devin Giddings , Hideaki Fukuzawa , Yoshihiko Fuji , Michiko Hara , Hiromi Yuasa
发明人： Devin Giddings , Hideaki Fukuzawa , Yoshihiko Fuji , Michiko Hara , Hiromi Yuasa
IPC分类号： G01L1/22 , G11B5/127 , G11B5/39 , G01R33/09 , H01L43/08 , H01F10/30 , A61B5/021 , A61B5/022 , H01F10/32
CPC分类号： G01R33/091 , A61B5/02108 , A61B5/022 , A61B2562/0247 , G01R33/093 , G11B5/3906 , G11B5/399 , G11B2005/3996 , H01F10/30 , H01F10/325 , H01F10/3254 , H01F10/3259 , H01L43/08
摘要： According to one embodiment, a magneto-resistive effect device, includes a stacked body stacked on a substrate, a pair of first electrodes that feeds current to the stacked body, a strain introduction member, and a second electrode for applying a voltage to the strain introduction member. The stacked body includes a first magnetic layer that includes one or more metals selected from the group consisting of iron, cobalt, and nickel, a second magnetic layer stacked on the first magnetic layer, having a composition that is different from the first magnetic layer, and a spacer layer disposed between the first magnetic layer and the second magnetic layer.
摘要翻译：根据一个实施例，磁阻效应装置包括堆叠在基板上的堆叠体，将一个电流馈送到堆叠体的一对第一电极，应变引入部件和用于向该应变施加电压的第二电极介绍会员。层叠体包括：第一磁性层，其包含选自铁，钴和镍的一种或多种金属，堆叠在第一磁性层上的具有与第一磁性层不同的组成的第二磁性层，以及设置在第一磁性层和第二磁性层之间的间隔层。

114. 发明授权

US08671554B2 Method of manufacturing a magneto-resistance effect element 失效
标题翻译：制造磁阻效应元件的方法
公开(公告)号：US08671554B2
公开(公告)日：2014-03-18
申请号：US13419198
申请日：2012-03-13
申请人： Hideaki Fukuzawa , Hiromi Yuasa , Yoshihiko Fuji
发明人： Hideaki Fukuzawa , Hiromi Yuasa , Yoshihiko Fuji
IPC分类号： G11B5/17 , H04R31/00
CPC分类号： B25G1/102
摘要： An example method for manufacturing a magneto-resistance effect element having a magnetic layer, a free magnetization layer, and a spacer layer includes forming a first metallic layer and forming, on the first metallic layer, a second metallic layer. A first conversion treatment is performed to convert the second metallic layer into a first insulating layer and to form a first metallic portion penetrating through the first insulating layer. A third metallic layer is formed on the first insulating layer and the first metallic portion. A second conversion treatment is performed to convert the third metallic layer into a second insulating layer and to form a second metallic portion penetrating through the second insulating layer.
摘要翻译：用于制造具有磁性层，自由磁化层和间隔层的磁阻效应元件的示例性方法包括形成第一金属层，并在第一金属层上形成第二金属层。执行第一转换处理以将第二金属层转换成第一绝缘层并形成贯穿第一绝缘层的第一金属部分。在第一绝缘层和第一金属部分上形成第三金属层。执行第二转换处理以将第三金属层转换成第二绝缘层并形成贯穿第二绝缘层的第二金属部分。

115. 发明申请

US20130242435A1 MAGNETO-RESISTANCE EFFECT ELEMENT, MAGNETIC HEAD ASSEMBLY, MAGNETIC RECORDING AND REPRODUCING APPARATUS, AND MAGNETIC MEMORY 有权
标题翻译：磁阻效应元件，磁头组件，磁记录和再现装置以及磁记忆
公开(公告)号：US20130242435A1
公开(公告)日：2013-09-19
申请号：US13728281
申请日：2012-12-27
申请人： Yoshihiko FUJI , Michiko Hara , Hideaki Fukuzawa , Hiromi Yuasa
发明人： Yoshihiko FUJI , Michiko Hara , Hideaki Fukuzawa , Hiromi Yuasa
IPC分类号： G11B5/127 , H01L43/10
CPC分类号： G11B5/1274 , G01R33/093 , G11B5/3906 , G11B5/3909 , G11B5/3983 , G11C11/16 , G11C11/161 , G11C11/1659 , H01L27/228 , H01L43/08 , H01L43/10
摘要： According to one embodiment, a magneto-resistance effect element includes: a first electrode; a second electrode; a first magnetic layer provided between the first and the second electrodes; a second magnetic layer provided between the first magnetic layer and the second electrode; and an oxide layer of a metal oxide provided between the first magnetic layer and the second magnetic layer. The oxide layer includes wustite crystal grains of a wustite structure with a (1 1 1) plane orientation containing iron. A lattice spacing of a (1 1 1) plane of the wustite crystal grains is not less than 0.253 nanometers and not more than 0.275 nanometers.
摘要翻译：根据一个实施例，磁阻效应元件包括：第一电极; 第二电极; 设置在第一和第二电极之间的第一磁性层; 设置在所述第一磁性层和所述第二电极之间的第二磁性层; 以及设置在第一磁性层和第二磁性层之间的金属氧化物的氧化物层。氧化物层包括具有含（111）面取向的方铁矿结构的方铁矿晶粒含铁。方铁矿晶粒的（111）面的晶格间距不小于0.253纳米，不大于0.275纳米。

116. 发明申请

US20120308728A1 MAGNETORESISTIVE ELEMENT AND METHOD OF MANUFACTURING THE SAME 审中-公开
标题翻译：磁性元件及其制造方法
公开(公告)号：US20120308728A1
公开(公告)日：2012-12-06
申请号：US13584293
申请日：2012-08-13
申请人： Hideaki FUKUZAWA , Shuichi Murakami , Hiromi Yuasa , Yoshihiko Fuji
发明人： Hideaki FUKUZAWA , Shuichi Murakami , Hiromi Yuasa , Yoshihiko Fuji
IPC分类号： B05D1/38
CPC分类号： H01L43/08 , B82Y10/00 , B82Y25/00 , G01R33/04 , G01R33/093 , G11B5/3906 , G11B2005/3996 , G11C11/16 , G11C11/161 , G11C11/1673 , G11C11/1675 , H01L27/228 , H01L43/10 , H01L43/12
摘要： A magnetoresistive element includes a magnetoresistive film including a magnetization pinned layer, a magnetization free layer, an intermediate layer arranged between the magnetization pinned layer and the magnetization free layer, a cap layer arranged on the magnetization pinned layer or on the magnetization free layer, and a functional layer arranged in the magnetization pinned layer, in the magnetization free layer, in the interface between the magnetization pinned layer and the intermediate layer, in the interface between the intermediate layer and the magnetization free layer, or in the interface between the magnetization pinned layer or the magnetization free layer and the cap layer, and a pair of electrodes which pass a current perpendicularly to a plane of the magnetoresistive film, in which the functional layer is formed of a layer including nitrogen and a metal material containing 5 atomic % or more of Fe.
摘要翻译：磁阻元件包括磁阻膜，其包括磁化被钉扎层，磁化自由层，布置在磁化钉扎层和磁化自由层之间的中间层，布置在磁化钉扎层或磁化自由层上的盖层，以及功能层，布置在磁化固定层中，在磁化自由层中，在磁化被钉扎层和中间层之间的界面中，在中间层和磁化自由层之间的界面中，或者在磁化固定层或磁化自由层和盖层，以及一对电极，其垂直于磁阻膜的平面通过电流，其中功能层由包含氮的层和含有5原子％的金属材料形成，或更多的铁。

117. 发明授权

US08228643B2 Method for manufacturing a magneto-resistance effect element and magnetic recording and reproducing apparatus 有权
标题翻译：制造磁阻效应元件和磁记录和重放装置的方法
公开(公告)号：US08228643B2
公开(公告)日：2012-07-24
申请号：US12585854
申请日：2009-09-25
申请人： Hiromi Yuasa , Hideaki Fukuzawa , Yoshihiko Fuji , Shuichi Murakami , Michiko Hara , Kunliang Zhang , Min Li , Erhard Schreck
发明人： Hiromi Yuasa , Hideaki Fukuzawa , Yoshihiko Fuji , Shuichi Murakami , Michiko Hara , Kunliang Zhang , Min Li , Erhard Schreck
IPC分类号： G11B5/39
CPC分类号： G01R33/093 , B82Y25/00 , B82Y40/00 , G11B5/3906 , G11B5/398 , G11B5/3983 , H01F10/3259 , H01F10/3272 , H01F41/307 , H01L43/08 , H01L43/12
摘要： A method for manufacturing a magneto-resistance effect element is provided. The magneto-resistance effect element includes a first magnetic layer including a ferromagnetic material, a second magnetic layer including a ferromagnetic material and a spacer layer provided between the first magnetic layer and the second magnetic layer, the spacer layer having an insulating layer and a conductive portion penetrating through the insulating layer. The method includes: forming a film to be a base material of the spacer layer; performing a first treatment using a gas including at least one of oxygen molecules, oxygen atoms, oxygen ions, oxygen plasma and oxygen radicals on the film; and performing a second treatment using a gas including at least one of nitrogen ions, nitrogen atoms, nitrogen plasma, and nitrogen radicals on the film submitted to the first treatment.
摘要翻译：提供一种制造磁阻效应元件的方法。磁阻效应元件包括包括铁磁材料的第一磁性层，包括铁磁材料的第二磁性层和设置在第一磁性层和第二磁性层之间的间隔层，间隔层具有绝缘层和导电部分穿透绝缘层。该方法包括：将膜形成为间隔层的基材; 使用包含氧分子，氧原子，氧离子，氧等离子体和氧自由基中的至少一种的气体进行第一处理; 以及使用包含氮离子，氮原子，氮等离子体和氮自由基中的至少一种的气体进行第一次处理的膜的第二处理。

118. 发明授权

US08184410B2 Magnetoresistive element having free layer magnetic compound expressed by M1M2O 有权
标题翻译：具有由M1M2O表示的自由层磁性化合物的磁阻元件
公开(公告)号：US08184410B2
公开(公告)日：2012-05-22
申请号：US11902657
申请日：2007-09-24
申请人： Yoshihiko Fuji , Hideaki Fukuzawa , Hiromi Yuasa
发明人： Yoshihiko Fuji , Hideaki Fukuzawa , Hiromi Yuasa
IPC分类号： G11B5/39 , G11C11/16
CPC分类号： G11B5/3983 , B82Y25/00 , G01R33/093 , G11B5/3906 , G11B5/398 , G11C11/161 , H01F10/187 , H01F10/3254 , H01F10/3259 , H01F10/3263 , H01F10/3272 , Y10T428/1121
摘要： An example magnetoresistive element includes a first magnetic layer whose magnetization direction is substantially pinned toward one direction; a second magnetic layer whose magnetization direction is changed in response to an external magnetic field; and a spacer layer provided between the first magnetic layer and the second magnetic layer. At least one of the first magnetic layer and the second magnetic layer has a magnetic compound that is expressed by M1aM2bXc(where 5≦a≦68, 10≦b≦73, and 22≦c≦85). M1 is at least one element selected from the group consisting of Co, Fe, and Ni. M2 is at least one element selected from the group consisting of Ti, V, Cr, and Mn. X is at least one element selected from the group consisting of N, O, and C.
摘要翻译：示例性磁阻元件包括其磁化方向基本上朝向一个方向固定的第一磁性层; 其磁化方向响应于外部磁场而改变的第二磁性层; 以及设置在第一磁性层和第二磁性层之间的间隔层。第一磁性层和第二磁性层中的至少一个具有由M1aM2bXc（其中5＆nlE; a＆nlE; 68,10＆amp; nlE; b＆nlE; 73和22＆nlE; c＆nlE; 85）表示的磁性化合物。 M1是选自Co，Fe和Ni中的至少一种元素。 M2是选自Ti，V，Cr和Mn中的至少一种元素。 X是选自N，O和C中的至少一种元素。

119. 发明申请

US20110295128A1 BLOOD-PRESSURE SENSOR 审中-公开
标题翻译：血压传感器
公开(公告)号：US20110295128A1
公开(公告)日：2011-12-01
申请号：US13045759
申请日：2011-03-11
申请人： Hiromi Yuasa , Hideaki Fukuzawa , Yoshihiko Fuji , Alexander Devin Giddings , Michiko Hara , Shuichi Murakami
发明人： Hiromi Yuasa , Hideaki Fukuzawa , Yoshihiko Fuji , Alexander Devin Giddings , Michiko Hara , Shuichi Murakami
IPC分类号： A61B5/021
CPC分类号： A61B5/02141 , A61B5/0004 , A61B5/021 , A61B5/6824 , A61B5/6833 , A61B2560/0214 , A61B2562/028 , G01L9/16 , G01L19/06 , G01L19/069
摘要： A blood-pressure sensor includes a substrate, a first electrode, a magnetization fixed layer, a nonmagnetic layer, a magnetization free layer, and a second electrode. The substrate is bent to generate a tensile stress at least in a first direction. The first electrode is provided on the substrate. The magnetization fixed layer has magnetization to be fixed in a second direction, and is provided on the substrate. The nonmagnetic layer is provided on the magnetization fixed layer. The magnetization free layer has a magnetization direction which is different from the first direction and from a direction perpendicular to the first direction. The second electrode is provided on the magnetization free layer.
摘要翻译：血压传感器包括基板，第一电极，磁化固定层，非磁性层，磁化自由层和第二电极。弯曲基板至少在第一方向上产生拉伸应力。第一电极设置在基板上。磁化固定层具有在第二方向上固定的磁化，并且设置在基板上。非磁性层设置在磁化固定层上。磁化自由层具有不同于第一方向和与第一方向垂直的方向的磁化方向。第二电极设置在无磁化层上。

120. 发明申请

US20090190262A1 Magnetoresistive element and method of manufacturing the same 有权
标题翻译：磁阻元件及其制造方法
公开(公告)号：US20090190262A1
公开(公告)日：2009-07-30
申请号：US12320668
申请日：2009-01-30
申请人： Shuichi Murakami , Hideaki Fukuzawa , Hiromi Yuasa , Yoshihiko Fuji
发明人： Shuichi Murakami , Hideaki Fukuzawa , Hiromi Yuasa , Yoshihiko Fuji
IPC分类号： G11B5/127 , G11B5/48 , B05D3/00
CPC分类号： H01L43/08 , B82Y10/00 , B82Y25/00 , G01R33/093 , G11B5/3906 , G11B2005/3996 , G11C11/161 , H01L27/228 , H01L43/10 , H01L43/12
摘要： A magnetoresistive element includes a magnetoresistive film including a magnetization pinned layer, a magnetization free layer, an intermediate layer arranged between the magnetization pinned layer and the magnetization free layer, a cap layer arranged on the magnetization pinned layer or on the magnetization free layer, and a functional layer formed of an oxygen- or nitrogen-containing material and arranged in the magnetization pinned layer, or in the magnetization free layer, and a pair of electrodes which pass a current perpendicularly to a plane of the magnetoresistive film, in which a crystalline orientation plane of the functional layer is different from a crystalline orientation plane of its upper or lower adjacent layer.
摘要翻译：磁阻元件包括磁阻膜，其包括磁化被钉扎层，磁化自由层，布置在磁化钉扎层和磁化自由层之间的中间层，布置在磁化钉扎层或磁化自由层上的盖层，以及由含氧或含氮材料形成并布置在磁化固定层中或在无磁化层中的功能层和一对电极，其垂直于磁阻膜的平面通过电流，其中晶体功能层的取向平面与其上部或下部相邻层的结晶取向平面不同。

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