会员体验
专利管家(专利管理)
工作空间(专利管理)
风险监控(情报监控)
数据分析(专利分析)
侵权分析(诉讼无效)
联系我们
交流群
官方交流:
QQ群: 891211   
微信请扫码    >>>
现在联系顾问~
热词
    • 112. 发明授权
    • Semiconductor memory device
    • 半导体存储器件
    • US07027342B2
    • 2006-04-11
    • US11154853
    • 2005-06-15
    • Koji Inoue
    • Koji Inoue
    • G11C7/02
    • G11C11/16G11C8/08G11C11/22G11C11/5678G11C11/5685G11C13/0004G11C13/0007G11C13/0028G11C13/004G11C2013/0054G11C2213/31G11C2213/77
    • In a semiconductor memory device having a crosspoint-type memory cell array, each reference level between two adjacent memory levels when memory levels of multi-level information stored in a memory cell are arranged in order of size of resistance values of a corresponding variable resistive element is defined by a reference current in a middle state between a first and a second current states. In the first current state, a readout current of high resistance selected cell in which the resistance is higher in the two adjacent memory levels becomes the largest state depending on a distribution pattern of a resistance state of the other unselected cell. In the second current state, a readout current of low resistance selected cell in which the resistance is lower in the two adjacent memory levels becomes a smallest state depending on a distribution pattern of a resistance state of the other unselected memory cell.
    • 在具有交叉点型存储单元阵列的半导体存储器件中,当存储在存储单元中的多电平信息的存储器电平按照相应可变电阻元件的电阻值的大小排列时,两个相邻存储器电平之间的每个参考电平 由第一和第二当前状态之间的中间状态的参考电流定义。 在第一当前状态下,根据其他未选择单元的电阻状态的分布模式,在两个相邻存储器电平中电阻较高的高电阻选择单元的读出电流变为最大状态。 在第二当前状态下,根据其他未选择的存储单元的电阻状态的分布模式,在两个相邻存储器电平中电阻较低的低电阻选择单元的读出电流变为最小状态。
    • 113. 发明申请
    • Steering device for motor vehicle
    • 机动车转向装置
    • US20060043720A1
    • 2006-03-02
    • US10534260
    • 2003-11-11
    • Naoki SawadaKoji Inoue
    • Naoki SawadaKoji Inoue
    • B62D1/18
    • B62D1/184B62D1/16B62D1/189
    • A steering apparatus for a vehicle has a steering column rotatably supporting a steering shaft, a first support member held between opposed flat plate portions of an upper bracket and supporting the steering column, a second support member held between opposed flat plate portions of a lower bracket and supporting the steering column, a first support mechanism for supporting the steering column on the upper bracket, and a second support mechanism for supporting the steering column on the lower bracket, wherein the steering column, the first support member and the second support member are integrally formed, the first support member is integrally formed with a first swelling portion having a pair of side portions that respectively press-abut on a pair of opposed flat plate portions of the upper bracket, and the second support member is integrally formed with a second swelling portion having a pair of side portions that respectively press-abut on a pair of opposed flat plate portions of the lower bracket.
    • 一种用于车辆的转向装置具有可转动地支撑转向轴的转向柱,保持在上支架的相对平板部分之间并支撑转向柱的第一支撑构件,保持在下支架的相对平板部分之间的第二支撑构件 并且支撑转向柱,用于支撑上支架上的转向柱的第一支撑机构和用于将转向柱支撑在下支架上的第二支撑机构,其中转向柱,第一支撑构件和第二支撑构件是 一体形成,第一支撑构件一体地形成有第一隆起部,该第一隆起部具有分别抵靠在上托架的一对相对的平板部分上的一对侧部,并且第二支撑构件与第二支撑构件一体地形成有第二 膨胀部分具有分别抵靠在一对相对的平板部分上的一对侧部 他下支架
    • 114. 发明申请
    • Semiconductor memory device
    • 半导体存储器件
    • US20050276138A1
    • 2005-12-15
    • US11154853
    • 2005-06-15
    • Koji Inoue
    • Koji Inoue
    • G11C7/02G11C8/08G11C11/16G11C11/22G11C11/34G11C11/56G11C13/00G11C16/02
    • G11C11/16G11C8/08G11C11/22G11C11/5678G11C11/5685G11C13/0004G11C13/0007G11C13/0028G11C13/004G11C2013/0054G11C2213/31G11C2213/77
    • In a semiconductor memory device having a crosspoint-type memory cell array, each reference level between two adjacent memory levels when memory levels of multi-level information stored in a memory cell are arranged in order of size of resistance values of a corresponding variable resistive element is defined by a reference current in a middle state between a first and a second current states. In the first current state, a readout current of high resistance selected cell in which the resistance is higher in the two adjacent memory levels becomes the largest state depending on a distribution pattern of a resistance state of the other unselected cell. In the second current state, a readout current of low resistance selected cell in which the resistance is lower in the two adjacent memory levels becomes a smallest state depending on a distribution pattern of a resistance state of the other unselected memory cell.
    • 在具有交叉点型存储单元阵列的半导体存储器件中,当存储在存储单元中的多电平信息的存储器电平按照相应可变电阻元件的电阻值的大小排列时,两个相邻存储器电平之间的每个参考电平 由第一和第二当前状态之间的中间状态的参考电流定义。 在第一当前状态下,根据其他未选择单元的电阻状态的分布模式,在两个相邻存储器电平中电阻较高的高电阻选择单元的读出电流变为最大状态。 在第二当前状态下,根据其他未选择的存储单元的电阻状态的分布模式,在两个相邻存储器电平中电阻较低的低电阻选择单元的读出电流变为最小状态。
    • 115. 发明申请
    • Semiconductor memory device
    • 半导体存储器件
    • US20050276091A1
    • 2005-12-15
    • US11154376
    • 2005-06-15
    • Koji Inoue
    • Koji Inoue
    • G11C7/12G11C7/18G11C11/00G11C11/15G11C16/02
    • G11C13/0007G11C7/12G11C7/18G11C11/15G11C11/5678G11C11/5685G11C13/0004G11C13/0026G11C13/004G11C2013/0054G11C2207/002G11C2211/5634G11C2213/31G11C2213/77
    • A semiconductor memory device having a crosspoint-type memory cell array includes a column readout voltage supply circuit 12 which supplies a predetermined first voltage when readout is selected, and supplies a second voltage different from the first voltage when the readout is not selected, to each of column selection lines BL, a row readout voltage supply circuit 11 which supplies the second voltage to each of row selection lines DL at the time of readout, a sense circuit 15 which senses a current flowing in the selected row selection line DL separately from a current flowing in the unselected row selection lines DL and senses an electric resistance state of the selected memory cell at the time of readout, and a row voltage displacement prevention circuit 31 which prevents a displacement in a supplied voltage level in at least selected row selection line DL at the time of readout.
    • 具有交叉点型存储单元阵列的半导体存储器件包括列读出电压供给电路12,其在选择读出时提供预定的第一电压,并且当未选择读出时,将不同于第一电压的第二电压提供给每个 列选择线BL,在读出时向行选择线DL中的每一行提供第二电压的行读出电压电路11,分别检测在所选择的行选择线DL中流动的电流的感测电路15 在未选择的行选择线DL中流动的电流,并且在读出时感测所选择的存储单元的电阻状态,以及行电压位移防止电路31,其防止至少选择的行选择线中提供的电压电平的位移 DL在读出时。
    • 118. 发明授权
    • Apparatus and method for reproducing video signals
    • 用于再现视频信号的装置和方法
    • US06947661B2
    • 2005-09-20
    • US09748897
    • 2000-12-27
    • Takashi KagawaKoji Inoue
    • Takashi KagawaKoji Inoue
    • H04N5/21G11B20/10H04N5/76H04N5/92H04N5/93H04N5/937H04N7/36H04N19/00H04N19/423H04N5/911
    • H04N19/503
    • To eliminate unnaturalness in the display of video signals that are intermittently updated. Video signals recorded in a disk 1 in a compressed manner are reproduced through a pickup 2. The reproduced signals are fed to a reproduction processing unit 3 from where a bit stream is fetched which is then fed to a decoder circuit 4. The decoder circuit 4 produces video signals reconstructed from the compression. The signals from the decoder circuit 4 are fed to an adder 12 which is an adder means through an amplifier 11 which is a weighting circuit having a coefficient of, for example, 0.5. The added signal from the adder 12 is fetched to an output terminal 13, and is fed to a frame memory 14 which is a storage means of, for example, one frame. The signal stored in the frame memory 14 is fed to an adder 12 through an amplifier 15 which is a second weighting circuit having a coefficient of, for example, 0.5.
    • 为了消除间歇更新的视频信号显示的不自然现象。 通过拾取器2再现以压缩方式记录在盘1中的视频信号。 再现信号被馈送到再现处理单元3,从中获取位流,然后将其馈送到解码器电路4。 解码器电路4产生从压缩重建的视频信号。 来自解码器电路4的信号通过放大器11馈送到作为加法器装置的加法器12,放大器11是具有例如0.5的系数的加权电路。 来自加法器12的相加信号被提取到输出端13,并且被馈送到作为例如一帧的存储装置的帧存储器14。 存储在帧存储器14中的信号通过放大器15馈送到加法器12,放大器15是具有例如0.5的系数的第二加权电路。
    • 119. 发明授权
    • Lockup clutch for torque converter
    • 变矩器锁止离合器
    • US06814195B2
    • 2004-11-09
    • US10309155
    • 2002-12-04
    • Tokuji YoshimotoKoji Inoue
    • Tokuji YoshimotoKoji Inoue
    • F16H4124
    • F16H45/02F16H3/16F16H2045/002F16H2045/0278
    • A lockup clutch for a torque converter includes a pump extension, a receiving plate connected to the pump extension defining a hydraulic pressure chamber communicating with a portion between a pump impeller and a turbine impeller, a pressing plate opposed to the receiving plate for movement toward and away from the receiving plate, an annular friction clutch plate interposed between the receiving plate and the pressing plate and connected to the turbine impeller, a return spring for biasing the pressing plate in a retracting direction, and an escape bore permitting the inside and outside of the receiving plate to communicate with each other on the side of an inner periphery of the friction clutch plate. When the rotational speed of the pump impeller is increased to a value equal to or higher than a predetermined value, the pressing plate clamps the friction clutch plate in cooperation with the receiving plate under the action of a centrifugal hydraulic pressure within the hydraulic pressure chamber. Thus, the lockup clutch needs no special control but has a simple structure.
    • 用于变矩器的锁止离合器包括泵延伸部,连接到泵延伸部的接收板,其限定与泵叶轮和涡轮叶轮之间的部分连通的液压室;与接收板相对移动的压板, 远离接收板的环形摩擦离合器片介于接收板和压板之间并连接到涡轮叶轮上的环形摩擦离合器片,用于使压板沿缩回方向偏压的复位弹簧和允许内侧和外侧 所述接收板在所述摩擦离合器板的内周侧相互连通。 当泵叶轮的转速增加到等于或高于预定值的值时,压力板在液压室内的离心液压作用下与接收板协作地夹紧摩擦离合器片。 因此,锁止离合器不需要特别的控制,而是结构简单。