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111. 发明授权

US5939164A Aluminum alloy sheet for magnetic disk substrate aluminum alloy clad sheet for magnetic disk substrate and their manufacturing method 失效
标题翻译：磁盘基板铝合金板用于磁盘基板的铝合金包覆板及其制造方法
公开(公告)号：US5939164A
公开(公告)日：1999-08-17
申请号：US805301
申请日：1997-02-25
申请人： Yoshinari Kubo , Ken-ichi Ogura , Yoichiro Bekki , Satoru Yamada , Koji Kinoshita
发明人： Yoshinari Kubo , Ken-ichi Ogura , Yoichiro Bekki , Satoru Yamada , Koji Kinoshita
IPC分类号： B32B3/02 , B32B15/01 , B32B15/10
CPC分类号： B32B15/016 , Y10T428/12028 , Y10T428/12063 , Y10T428/12736 , Y10T428/12764
摘要： The present invention relates to an aluminum alloy for a magnetic disk substrate having a composition consisting of, by percent by weight, 2.0 to 6.0% of Mg, 0.05 to 0.15% of Cu, 0.10 to 0.30% of Zn and 0.05 to 0.12% of Zr, wherein the contents of Cu, Zn and Zr satisfy the relationship: 0.15%.ltoreq.2Cu+6Zr-3Zn.ltoreq.0.32% (wherein Cu, Zr, and Zn respectively represent their contents in terms of percent by weight), and the composition further consists of one or both of 0.01 or more to less than 0.05% of Cr and 0.01 or more to less than 0.05% of Mn, impurities consisting of Si, Fe and Ti, which are respectively regulated to be 0.05% or less, 0.05% or less, and 0.02% or less, and other inevitable impurity elements respectively regulated to be 0.02% or less, with the remainder being Al. The present invention also relates to a clad material for a magnetic disk substrate, in which one or both surfaces of a core material, consisting of at least less than 3.0% of Zn with the remainder being Al and inevitable impurity elements, are clad with a surface material consisting of the aluminum alloy having the above composition. The above aluminum alloy composition makes it possible to manufacture a large storage memory capacity magnetic disk in which there is much less formation of micropits or nodules.
摘要翻译：本发明涉及一种磁盘基板用铝合金，其组成为以重量％计含有2.0〜6.0％的Mg，0.05〜0.15％的Cu，0.10〜0.30％的Zn和0.05〜0.12％的Zn Zr，其中Cu，Zn和Zr的含量满足关系：0.15％

112. 发明授权

US5728230A Solar cell and method for manufacturing the same 失效
标题翻译：太阳能电池及其制造方法
公开(公告)号：US5728230A
公开(公告)日：1998-03-17
申请号：US689653
申请日：1996-08-13
申请人： Ayako Komori , Takahiro Mori , Ichiro Kataoka , Satoru Yamada , Hidenori Shiotsuka
发明人： Ayako Komori , Takahiro Mori , Ichiro Kataoka , Satoru Yamada , Hidenori Shiotsuka
IPC分类号： H01L31/04 , B32B17/02 , H01L31/048 , H01L31/18
CPC分类号： B32B17/02 , H01L31/048 , Y02E10/50
摘要： There is provided a highly reliable solar cell which is capable of retaining the adhesion either between a photovoltaic element and a reinforcing plate or an insulating film and between an insulating film and a reinforcing plate even under long-term outdoor exposure. An adhesive layer between the photovoltaic element and the reinforcing plate comprises a base resin and an adhesion-imparting resin.
摘要翻译：提供了一种高度可靠的太阳能电池，其即使在长期室外暴露下也能够保持光电元件与加强板或绝缘膜之间以及绝缘膜和加强板之间的粘合。光电元件和加强板之间的粘合剂层包括基础树脂和粘合赋予树脂。

113. 发明授权

US5566632A Control method for automatic sewing machine and apparatus thereof 失效
标题翻译：自动缝纫机的控制方法及其装置
公开(公告)号：US5566632A
公开(公告)日：1996-10-22
申请号：US43819
申请日：1993-04-07
申请人： Yoshifumi Nishizawa , Tomonori Abe , Iwao Yamane , Satoru Yamada
发明人： Yoshifumi Nishizawa , Tomonori Abe , Iwao Yamane , Satoru Yamada
IPC分类号： D05B21/00 , G05B19/416
CPC分类号： G05B19/416 , D05B21/00
摘要： A sewing machine arrangement comprises a sewing machine, a motor for driving a spindle, and a motor for operating a two-axis drive mechanism. When the two-axis drive mechanism is driven at a maximum speed, processing is executed in which a speed (t) slower than the maximum speed is inserted by a program. Further, drive current flowing through the motor for driving the two-axis drive mechanism is set. A phase exciting method of a stepping motor is switched.
摘要翻译：缝纫机装置包括缝纫机，用于驱动主轴的马达和用于操作双轴驱动机构的马达。当以最大速度驱动双轴驱动机构时，执行通过程序插入比最大速度慢的速度（t）的处理。此外，设定流过用于驱动双轴驱动机构的马达的驱动电流。切换步进电机的相位激励方式。

114. 发明授权

US5407882A Olefin polymerization catalyst and olefin polymerization process 失效
标题翻译：烯烃聚合催化剂和烯烃聚合方法
公开(公告)号：US5407882A
公开(公告)日：1995-04-18
申请号：US100174
申请日：1993-08-02
申请人： Satoru Yamada , Akihiro Yano
发明人： Satoru Yamada , Akihiro Yano
IPC分类号： C08F4/646 , C08F4/659 , C08F4/6592 , C08F10/00 , B01J31/14
CPC分类号： C08F10/00 , C08F4/65908 , C08F4/65912 , C08F4/65922
摘要： A catalyst for polymerization of olefin is provided which comprises (A) a metallocene compound, (B) an organoaluminum compound, and (C) a metal borate or a metal aluminate. The metallocene compound (A) is represented by the general formula (1) below: ##STR1## where Cp.sup.1 and Cp.sup.2 are cyclopentadienyl group; R.sup.1 is an alkylene, arylalkylene, dialkylsilylene, dialkylgermanylene, alkylphosphinediyl, or alkylimino group, R.sup.1 crosslinking Cp.sup.1 and Cp.sup.2 together; m is 0 or 1; M is titanium, zirconium, or hafnium; and R.sup.2 and R.sup.3 are independently hydrogen, halogen, or a hydrocarbon group, an alkoxy group, or an aryloxy group having 1 to 12 carbons, the organic aluminum compound (B) is represented by the general formula (2) below:AlR.sup.4.sub.3 (2)where each R.sup.4 is independently hydrogen, alkyl, alkoxy, or an aryl group, at least one R.sup.4 being an alkyl group, and the metal borate or the metal aluminate (C) being represented by the general formula (3):(C(L).sub.n).sub.b (A).sub.d (3)where C is an alkali metal cation or an alkaline earth metal cation; L is a Lewis base; A is an art ion having elemental boron or elemental aluminum; n is an integer of from 0 to 6; b and d are respectively an integer selected to balance the electric charge.
摘要翻译：提供了一种用于烯烃聚合的催化剂，其包含（A）茂金属化合物，（B）有机铝化合物和（C）金属硼酸盐或金属铝酸盐。金属茂化合物（A）由下述通式（1）表示：二烯基; R1是亚烷基，芳基亚烷基，二烷基亚甲硅烷基，二烷基炔丙基，烷基亚膦酰基或烷基亚氨基，R1交联Cp1和Cp2; m为0或1; M是钛，锆或铪; R2和R3独立地为氢，卤素或烃基，烷氧基或碳数为1〜12的芳氧基，有机铝化合物（B）由下述通式（2）表示：AlR43（2 ）其中每个R 4独立地是氢，烷基，烷氧基或芳基，至少一个R 4是烷基，并且金属硼酸盐或金属铝酸盐（C）由通式（3）表示：（C（ L）n）b（A）d（3）其中C是碱金属阳离子或碱土金属阳离子; L是路易斯碱; A是具有元素硼或元素铝的艺术离子; n为0〜6的整数。 b和d分别是选择用于平衡电荷的整数。

115. 发明授权

US5293828A Automatic sewing machine control device 失效
标题翻译：自动缝纫机控制装置
公开(公告)号：US5293828A
公开(公告)日：1994-03-15
申请号：US824290
申请日：1992-01-23
申请人： Yoshifumi Nishizawa , Iwao Yamane , Satoru Yamada
发明人： Yoshifumi Nishizawa , Iwao Yamane , Satoru Yamada
IPC分类号： D05B3/02 , D05B19/00 , D05B21/00 , D05B69/18 , D05B69/20 , D05C5/06
CPC分类号： D05B69/18 , D05B21/00
摘要： A control device for an automatic sewing machine in which a cloth presser unit holding a material to be sewed is moved according a predetermined pattern thereby to form a seam having a predetermined pattern. The control device controls the speed of rotation of the automatic sewing machine and the movement of the cloth presser unit with high accuracy to obtain seams which are excellent in quality.
摘要翻译：一种用于自动缝纫机的控制装置，其中保持待缝合材料的压布装置按预定图案移动，从而形成具有预定图案的接缝。控制装置以高精度控制自动缝纫机的旋转速度和压布装置的移动，以获得质量优异的接缝。

116. 发明授权

US09418988B2 Gate electrode and gate contact plug layouts for integrated circuit field effect transistors 有权
标题翻译：用于集成电路场效应晶体管的栅电极和栅极接触插头布局
公开(公告)号：US09418988B2
公开(公告)日：2016-08-16
申请号：US14461202
申请日：2014-08-15
申请人： Kyo-Suk Chae , Satoru Yamada , Sang-Yeon Han , Young-Jin Choi , Wook-Je Kim
发明人： Kyo-Suk Chae , Satoru Yamada , Sang-Yeon Han , Young-Jin Choi , Wook-Je Kim
IPC分类号： H01L27/088 , H01L29/423 , H01L29/78
CPC分类号： H01L27/088 , H01L23/535 , H01L27/0207 , H01L29/0649 , H01L29/0847 , H01L29/42376 , H01L29/4238 , H01L29/4933 , H01L29/7833
摘要： A four transistor layout can include an isolation region that defines an active region, the active region extending along first and second different directions. A common source region of the four transistors extends from a center of the active region along both the first and second directions to define four quadrants of the active region that are outside the common source region. Four drain regions are provided, a respective one of which is in a respective one of the four quadrants and spaced apart from the common source region. Finally, four gate electrodes are provided, a respective one of which is in a respective one of the four quadrants between the common source region and a respective one of the four drain regions. A respective gate electrode includes a vertex and first and second extending portions, the first extending portions extending from the vertex along the first direction and the second extending portions extending from the vertex along the second direction.
摘要翻译：四晶体管布局可以包括限定有源区域的隔离区域，有源区域沿第一和第二不同方向延伸。四个晶体管的共同源极区域从有源区域的中心沿着第一和第二方向延伸，以限定位于公共源极区域外的有源区域的四个象限。设置四个漏极区，其中的一个位于四个象限中的相应一个中并与公共源极区间隔开。最后，提供四个栅电极，其中的一个位于公共源极区域和四个漏极区域中的相应一个之间的四个象限中的相应一个中。相应的栅电极包括顶点和第一和第二延伸部分，第一延伸部分从顶点沿着第一方向延伸，第二延伸部分从顶点沿着第二方向延伸。

117. 发明授权

US08901630B2 Transistor, semiconductor device, and semiconductor module including the same 有权
标题翻译：晶体管，半导体器件和包括其的半导体模块
公开(公告)号：US08901630B2
公开(公告)日：2014-12-02
申请号：US13779179
申请日：2013-02-27
申请人： Ki-Jae Huh , Satoru Yamada , Jun-Hee Lim , Sung-Ho Jang
发明人： Ki-Jae Huh , Satoru Yamada , Jun-Hee Lim , Sung-Ho Jang
IPC分类号： H01L27/04 , H01L29/423 , H01L29/417 , H01L29/78
CPC分类号： H01L29/7827 , H01L27/04 , H01L29/41766 , H01L29/4236 , H01L29/78 , H01L29/785
摘要： A semiconductor device including a buried cell array transistor and an electronic device including the same are provided. The device includes a field region in a substrate and the filed region defines an active region. A first source/drain region and a second source/drain region are in the active region. A gate trench is between the first and second source/drain regions, and in the active region and the field region. A gate structure is within the gate trench. The gate structure includes a gate electrode, an insulating gate capping pattern on the gate electrode, a gate dielectric between the gate electrode and the active region, and an insulating metal-containing material layer between the insulating gate capping pattern and the active region.
摘要翻译：提供了包括掩埋单元阵列晶体管的半导体器件和包括其的电子器件。该器件包括衬底中的场区域，并且场区域限定有源区域。第一源极/漏极区域和第二源极/漏极区域在有源区域中。栅极沟槽位于第一和第二源极/漏极区域之间，并且在有源区域和场区域中。栅极结构在栅极沟槽内。栅极结构包括栅极电极，栅电极上的绝缘栅极覆盖图案，栅极电极和有源区域之间的栅极电介质，以及绝缘栅极覆盖图案和有源区域之间的绝缘金属含有材料层。

118. 发明授权

US08809930B2 Semiconductor memory devices 有权
标题翻译：半导体存储器件
公开(公告)号：US08809930B2
公开(公告)日：2014-08-19
申请号：US13742940
申请日：2013-01-16
申请人： Namho Jeon , Jun-Su Kim , Satoru Yamada , Jaehoon Lee , Seunguk Han , Jiyoung Kim , Jin-Seong Lee
发明人： Namho Jeon , Jun-Su Kim , Satoru Yamada , Jaehoon Lee , Seunguk Han , Jiyoung Kim , Jin-Seong Lee
IPC分类号： H01L29/76
CPC分类号： H01L29/7831 , G11C11/403 , G11C11/40615 , G11C11/4097 , G11C2207/2227 , H01L27/105 , H01L27/115
摘要： Semiconductor memory devices may include a write transistor including a first write gate controlling a first source/drain terminal and a second write gate controlling a channel region, and a read transistor including a memory node gate connected to the first source/drain terminal of the write transistor. The first write gate may have a first work function and the second write gate may have a second work function different from the first work function. The first source/drain terminal of the write transistor may not have a PN junction.
摘要翻译：半导体存储器件可以包括写入晶体管，其包括控制第一源极/漏极端子的第一写入栅极和控制沟道区域的第二写入栅极，以及读取晶体管，其包括连接到写入的第一源极/漏极端子的存储器节点栅极晶体管。第一写入门可以具有第一工作功能，并且第二写入门可以具有与第一工作功能不同的第二工作功能。写晶体管的第一源极/漏极端子可以不具有PN结。

119. 发明授权

US08669165B2 Method of fabricating semiconductor device using deuterium annealing 有权
标题翻译：使用氘退火制造半导体器件的方法
公开(公告)号：US08669165B2
公开(公告)日：2014-03-11
申请号：US13216706
申请日：2011-08-24
申请人： Seung-Uk Han , Nam-Ho Jeon , Satoru Yamada , Young-Jin Choi
发明人： Seung-Uk Han , Nam-Ho Jeon , Satoru Yamada , Young-Jin Choi
IPC分类号： H01L21/02
CPC分类号： H01L27/10894 , H01L21/28176 , H01L21/3003 , H01L27/10808 , H01L27/10852
摘要： A method of fabricating a semiconductor device is disclosed, the method generally including the steps of: forming a gate dielectric layer on a semiconductor substrate; forming a gate electrode on the gate dielectric layer; forming an etch stop layer on the gate electrode; forming a capacitor on the semiconductor substrate adjacent to the gate electrode; after forming the capacitor, forming a contact hole passing through the etch stop layer on the gate electrode; and, diffusing deuterium into the gate dielectric layer through the contact hole.
摘要翻译：公开了制造半导体器件的方法，该方法通常包括以下步骤：在半导体衬底上形成栅介质层; 在所述栅极电介质层上形成栅电极; 在栅电极上形成蚀刻停止层; 在与栅电极相邻的半导体衬底上形成电容器; 在形成电容器之后，形成穿过栅电极上的蚀刻停止层的接触孔; 并且通过接触孔将氘扩散到栅极电介质层中。

120. 发明授权

US08629747B2 Coil component 有权
标题翻译：线圈组件
公开(公告)号：US08629747B2
公开(公告)日：2014-01-14
申请号：US13437359
申请日：2012-04-02
申请人： Satoru Yamada , Yoshiyuki Hatayama
发明人： Satoru Yamada , Yoshiyuki Hatayama
IPC分类号： H01F27/29
CPC分类号： H01F27/29 , H01F17/04 , H01F27/292 , H01F41/10 , H01F2017/048 , Y10T29/49071 , Y10T29/49073
摘要： A coil component includes a core formed by a magnetic material, a coil embedded in the core, a part of a terminal portion of the coil protruded from a side surface of the core, and a tabular terminal, a part thereof protruded from the side surface of the core and partly connected with the protruded part of the terminal portion of the coil. The protruded part of the terminal portion of the coil and the protruded part of the tabular terminal are respectively bent toward the bottom surface side of the core along the side surface of the core, and the protruded and bent part o the terminal portion of the coil is arranged between the protruded and bent part of the tabular terminal and the core.
摘要翻译：线圈部件包括由磁性材料形成的芯部，嵌入在芯部中的线圈，从芯部的侧表面突出的线圈的端子部分的一部分，以及从侧面突出的部分并且部分地与线圈的端子部分的突出部分连接。线圈的端子部分的突出部分和平板状端子的突出部分分别沿着芯的侧表面朝着芯的底表面侧弯曲，并且线圈的端部的突出和弯曲部分布置在板状端子的突出部分和弯曲部分之间。

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