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    • 112. 发明授权
    • Integrated circuit capacitors having doped HSG electrodes
    • 具有掺杂HSG电极的集成电路电容器
    • US06876029B2
    • 2005-04-05
    • US10634244
    • 2003-08-05
    • Seung-Hwan LeeSang-Hyeop LeeYoung-Sun KimSe-Jin ShimYou-Chan JinJu-Tae MoonJin-Seok ChoiYoung-Min KimKyung-Hoon KimKab-Jin NamYoung-Wook ParkSeok-Jun WonYoung-Dae Kim
    • Seung-Hwan LeeSang-Hyeop LeeYoung-Sun KimSe-Jin ShimYou-Chan JinJu-Tae MoonJin-Seok ChoiYoung-Min KimKyung-Hoon KimKab-Jin NamYoung-Wook ParkSeok-Jun WonYoung-Dae Kim
    • H01L27/04H01L21/02H01L21/822H01L29/92H01L27/108
    • H01L28/84Y10S438/964
    • Methods of forming integrated circuit capacitors include the steps of forming a lower electrode of a capacitor by forming a conductive layer pattern (e.g., silicon layer) on a semiconductor substrate and then forming a hemispherical grain (HSG) silicon surface layer of first conductivity type on the conductive layer pattern. The inclusion of a HSG silicon surface layer on an outer surface of the conductive layer pattern increases the effective surface area of the lower electrode for a given lateral dimension. The HSG silicon surface layer is also preferably sufficiently doped with first conductivity type dopants (e.g., N-type) to minimize the size of any depletion layer which may be formed in the lower electrode when the capacitor is reverse biased and thereby improve the capacitor's characteristic Cmin/Cmax ratio. A diffusion barrier layer (e.g., silicon nitride) is also formed on the lower electrode and then a dielectric layer is formed on the diffusion barrier layer. The diffusion barrier layer is preferably made of a material of sufficient thickness to prevent reaction between the dielectric layer and the lower electrode and also prevent out-diffusion of dopants from the HSG silicon surface layer to the dielectric layer. The dielectric layer is also preferably formed of a material having high dielectric strength to increase capacitance.
    • 形成集成电路电容器的方法包括以下步骤:通过在半导体衬底上形成导电层图案(例如,硅层)形成电容器的下电极,然后形成第一导电类型的半球形晶粒(HSG)硅表面层 导电层图案。 在导电层图案的外表面上包含HSG硅表面层增加给定横向尺寸的下电极的有效表面积。 HSG硅表面层还优选地充分掺杂有第一导电型掺杂剂(例如,N型),以使电容器反向偏置时可能在下电极中形成的任何耗尽层的尺寸最小化,从而提高电容器的特性 Cmin / Cmax比。 扩散阻挡层(例如,氮化硅)也形成在下电极上,然后在扩散阻挡层上形成电介质层。 扩散阻挡层优选由足够厚度的材料制成,以防止介电层和下电极之间的反应,并且还防止掺杂剂从HSG硅表面层向电介质层的扩散。 电介质层还优选由具有高介电强度的材料形成以增加电容。
    • 113. 发明授权
    • Process for producing thermoplastic resins having high impact strength
    • 具有高冲击强度的热塑性树脂的制造方法
    • US6080815A
    • 2000-06-27
    • US91254
    • 1998-06-10
    • Chang-Hong LeeYoung-Min KimJin-Nyoung Yoo
    • Chang-Hong LeeYoung-Min KimJin-Nyoung Yoo
    • C08F279/00C08F279/04
    • C08F279/04
    • The present invention relates to a process for producing a thermoplastic resin having high impact strength and good surface gloss, which comprises graft copolymerizing at least a vinyl cyanide compound and at least an aromatic vinyl compound for a short period of less than about 3 hours in the presence of rubber latex having high gel content. The rubber latex can be a mixture of two or more rubber latices having different particle size. The graft copolymer has the characteristics such that the degree of the inner occlusion into the resin is decreased and the degree of surface grafting is increased. Thereby, the resulted thermoplastic resin has a very high impact strength and good surface gloss, and the processability is greatly improved. In addition, when the graft copolymer is polymerized the level of coagulum formation is greatly decreased.
    • PCT No.PCT / KR97 / 00213 Sec。 371日期:1998年6月10日 102(e)日期1998年6月10日PCT 1997年11月4日PCT PCT。 WO98 / 20057 PCT公开号 日期1998年5月14日本发明涉及一种具有高冲击强度和良好表面光泽度的热塑性树脂的制造方法,该方法包括至少将乙烯基氰化合物和至少一种芳香族乙烯基化合物接枝至少于约 在具有高凝胶含量的橡胶胶乳存在下3小时。 橡胶胶乳可以是两种或更多种具有不同粒度的胶乳的混合物。 接枝共聚物具有这样的特性,使得内部阻塞到树脂中的程度降低,并且表面接枝的程度增加。 因此,所得到的热塑性树脂具有非常高的冲击强度和良好的表面光泽度,并且加工性大大提高。 此外,当接枝共聚物聚合时,凝结物形成的水平大大降低。