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111. 发明授权

US07400020B2 Conductive niobium oxide gate MOSFET 失效
标题翻译：导电铌氧化物栅极MOSFET
公开(公告)号：US07400020B2
公开(公告)日：2008-07-15
申请号：US11479045
申请日：2006-06-30
申请人： Wei Gao , Yoshi Ono
发明人： Wei Gao , Yoshi Ono
IPC分类号： H01L29/76 , H01L29/94 , H01L31/00
CPC分类号： H01L29/66583 , H01L21/28088 , H01L21/28194 , H01L29/4966 , H01L29/517 , H01L29/78
摘要： MOSFET gate structures are provided comprising a niobium monoxide gate, overlying a gate dielectric. The niobium monoxide gate may have a low work function suitable for use as an NMOS gate.
摘要翻译：提供包括覆盖栅极电介质的铌氧化物栅极的MOSFET栅极结构。铌氧化物栅可能具有适合用作NMOS栅极的低功函数。

112. 发明申请

US20080131048A1 Optical Fibre Switch 审中-公开
标题翻译：光纤交换机
公开(公告)号：US20080131048A1
公开(公告)日：2008-06-05
申请号：US11574186
申请日：2005-08-22
申请人： Ju Hyun Yoo , Wei Gao
发明人： Ju Hyun Yoo , Wei Gao
IPC分类号： G02B6/35 , H01L41/09 , H01L41/187
CPC分类号： G02B6/3502 , G02B6/3556 , G02B6/3578 , G02B6/358 , H01L41/094 , H01L41/0966
摘要： An optical fibre switch (10) includes an optical fibre conduit (12). A transducer (16) is carried on the conduit (12), the transducer (16) converting input energy of one form into mechanical energy so that the application of an external stimulus causes a change in condition of the transducer (16) which imparts that change in condition to the conduit (12). An input energy applying arrangement (20) is arranged on the transducer (16) for applying the external stimulus.
摘要翻译：光纤开关（10）包括光纤导管（12）。传感器（16）承载在导管（12）上，换能器（16）将一种形式的输入能量转换为机械能，使得外部刺激的施加导致换能器（16）的状态改变，改变状态到导管（12）。输入能量施加装置（20）布置在换能器（16）上以施加外部刺激。

113. 发明申请

US20080063113A1 Compensation for gain imbalance, phase imbalance and DC offsets in a transmitter 有权
标题翻译：对发射机的增益不平衡，相位不平衡和直流偏移的补偿
公开(公告)号：US20080063113A1
公开(公告)日：2008-03-13
申请号：US11739840
申请日：2007-04-25
申请人： Wei Gao , Didmin Shih
发明人： Wei Gao , Didmin Shih
IPC分类号： H04L25/03
CPC分类号： H04L27/2626 , H04L25/061 , H04L2027/0016 , H04L2027/0018
摘要： A method for correcting gain imbalance error, phase imbalance error and DC offset errors in a transmitter having an OFDM-based I/Q modulator is disclosed. The method employs a compensator prior to the I/Q-modulator to compensate for the gain and phase imbalance and DC offset. The compensator is efficiently updated with the estimated values of gain and phase imbalance and DC offsets obtained by performing the DFT operation in the digital baseband domain while sending a pair of orthogonal test tones to the modulator's inputs from a digital baseband chip, then down converting the RF modulated signal through a nonlinear device and a bandpass filter to a baseband signal, and finally sampling it using an A/D. The delay mismatch, which is mainly generated by lowpass filters between the I and Q branches, is also minimized in this method.
摘要翻译：公开了一种用于校正具有基于OFDM的I / Q调制器的发射机中的增益不平衡误差，相位不平衡误差和DC偏移误差的方法。该方法在I / Q调制器之前采用补偿器来补偿增益和相位不平衡和DC偏移。通过在数字基带域中执行DFT操作而获得的增益和相位不平衡和DC偏移的估计值有效地更新补偿器，同时从数字基带芯片向调制器的输入发送一对正交测试音调，然后将 RF调制信号通过非线性器件和带通滤波器到基带信号，最后采用A / D采样。在该方法中，主要由I和Q分支之间的低通滤波器产生的延迟失配也被最小化。

114. 发明申请

US20080035946A1 Rare earth element-doped silicon oxide film electroluminescence device 审中-公开
标题翻译：稀土元素掺杂氧化硅膜电致发光器件
公开(公告)号：US20080035946A1
公开(公告)日：2008-02-14
申请号：US11973525
申请日：2007-10-09
申请人： Wei Gao , Tingkai Li , Robert Barrowcliff , Yoshi Ono , Sheng Hsu
发明人： Wei Gao , Tingkai Li , Robert Barrowcliff , Yoshi Ono , Sheng Hsu
IPC分类号： H01L33/00 , H01L23/58
CPC分类号： H05B33/145 , H01L21/3115 , H01L31/03046 , Y02E10/544
摘要： A method is provided for forming a rare earth (RE) element-doped silicon (Si) oxide film with nanocrystalline (nc) Si particles. The method comprises: providing a first target of Si, embedded with a first rare earth element; providing a second target of Si; co-sputtering the first and second targets; forming a Si-rich Si oxide (SRSO) film on a substrate, doped with the first rare earth element; and, annealing the rare earth element-doped SRSO film. The first target is doped with a rare earth element such as erbium (Er), ytterbium (Yb), cerium (Ce), praseodymium (Pr), or terbium (Tb). The sputtering power is in the range of about 75 to 300 watts (W). Different sputtering powers are applied to the two targets. Also, deposition can be controlled by varying the effective areas of the two targets. For example, one of the targets can be partially covered.
摘要翻译：提供了一种用于形成具有纳米晶体（nc）Si颗粒的稀土（RE）元素掺杂硅（Si）氧化物膜的方法。该方法包括：提供嵌入有第一稀土元素的Si的第一靶; 提供Si的第二个目标; 共溅射第一和第二个目标; 在掺杂有第一稀土元素的衬底上形成富Si氧化硅（SRSO）膜; 并对稀土元素掺杂的SRSO膜退火。第一靶用铒（Er），镱（Yb），铈（Ce），镨（Pr）或铽（Tb）等稀土元素掺杂。溅射功率在约75至300瓦（W）的范围内。不同的溅射功率被应用于两个目标。此外，可以通过改变两个目标的有效面积来控制沉积。例如，其中一个目标可以被部分覆盖。

115. 发明授权

US07259055B2 Method of forming high-luminescence silicon electroluminescence device 失效
标题翻译：形成高发光硅电致发光器件的方法
公开(公告)号：US07259055B2
公开(公告)日：2007-08-21
申请号：US11066713
申请日：2005-02-24
申请人： Tingkai Li , Pooran Chandra Joshi , Wei Gao , Yoshi Ono , Sheng Teng Hsu
发明人： Tingkai Li , Pooran Chandra Joshi , Wei Gao , Yoshi Ono , Sheng Teng Hsu
IPC分类号： H01L21/8238
CPC分类号： H01L31/03046 , Y02E10/544 , Y02P70/521
摘要： A method for forming a high-luminescence Si electroluminescence (EL) phosphor is provided, with an EL device made from the Si phosphor. The method comprises: depositing a silicon-rich oxide (SRO) film, with Si nanocrystals, having a refractive index in the range of 1.5 to 2.1, and a porosity in the range of 5 to 20%; and, post-annealing the SRO film in an oxygen atmosphere. DC-sputtering or PECVD processes can be used to deposit the SRO film. In one aspect the method further comprises: HF buffered oxide etching (BOE) the SRO film; and, re-oxidizing the SRO film, to form a SiO2 layer around the Si nanocrystals in the SRO film. In one aspect, the SRO film is re-oxidized by annealing in an oxygen atmosphere. In this manner, a layer of SiO2 is formed around the Si nanocrystals having a thickness in the range of 1 to 5 nanometers (nm).
摘要翻译：提供一种用于形成高发光Si电致发光（EL）荧光体的方法，其具有由Si荧光体制成的EL器件。该方法包括：用Si纳米晶体沉积富含氧的氧化物（SRO）膜，折射率在1.5至2.1范围内，孔隙率在5至20％的范围内; 并且在氧气氛中对SRO膜进行后退火。 DC溅射或PECVD工艺可用于沉积SRO膜。在一个方面，该方法还包括：HF缓冲氧化物蚀刻（BOE）SRO膜; 并且再次氧化SRO膜，以在SRO膜中的Si纳米晶体周围形成SiO 2层。在一个方面，SRO膜通过在氧气气氛中退火再次氧化。以这种方式，在具有1至5纳米（nm）范围内的厚度的Si纳米晶体周围形成SiO 2层。

116. 发明申请

US20060197438A1 Nanotip electrode electroluminescence device with contoured phosphor layer 失效
公开(公告)号：US20060197438A1
公开(公告)日：2006-09-07
申请号：US11070051
申请日：2005-03-01
申请人： John Conley , David Evans , Wei Gao , Yoshi Ono
发明人： John Conley , David Evans , Wei Gao , Yoshi Ono
IPC分类号： H05B33/14 , H05B33/00 , H01L51/50 , H01L51/56
CPC分类号： H05B33/10 , B82Y20/00 , C09K11/54 , C09K11/642 , H01L33/18 , H05B33/14
摘要： A device and a fabrication method are provided for an EL device with a nanotip-contoured phosphor layer. The method comprises: forming a bottom electrode with nanotips; forming a phosphor layer overlying the bottom electrode, having irregularly-shaped top and bottom surfaces; and, forming a top electrode overlying the phosphor layer. The bottom electrode top surface has a nanotip contour, and the phosphor layer irregularly-shaped top and bottom surfaces have contours approximately matching the bottom electrode top surface nanotip contour. In one aspect, a contoured bottom dielectric is interposed between the bottom electrode and the phosphor layer, having top and bottoms surfaces with contours approximately matching the nanotip contour. Likewise, a top dielectric may be interposed between the top electrode and the phosphor layer, having a bottom surface with a contour approximately matching the contour of phosphor layer top surface.

117. 发明申请

US20060189014A1 High-luminescence silicon electroluminescence device 失效
标题翻译：高发光硅电致发光器件
公开(公告)号：US20060189014A1
公开(公告)日：2006-08-24
申请号：US11066713
申请日：2005-02-24
申请人： Tingkai Li , Pooran Joshi , Wei Gao , Yoshi Ono , Sheng Hsu
发明人： Tingkai Li , Pooran Joshi , Wei Gao , Yoshi Ono , Sheng Hsu
IPC分类号： H01L21/00
CPC分类号： H01L31/03046 , Y02E10/544 , Y02P70/521
摘要： A method for forming a high-luminescence Si electroluminescence (EL) phosphor is provided, with an EL device made from the Si phosphor. The method comprises: depositing a silicon-rich oxide (SRO) film, with Si nanocrystals, having a refractive index in the range of 1.5 to 2.1, and a porosity in the range of 5 to 20%; and, post-annealing the SRO film in an oxygen atmosphere. DC-sputtering or PECVD processes can be used to deposit the SRO film. In one aspect the method further comprises: HF buffered oxide etching (BOE) the SRO film; and, re-oxidizing the SRO film, to form a SiO2 layer around the Si nanocrystals in the SRO film. In one aspect, the SRO film is re-oxidized by annealing in an oxygen atmosphere. In this manner, a layer of SiO2 is formed around the Si nanocrystals having a thickness in the range of 1 to 5 nanometers (nm).
摘要翻译：提供一种用于形成高发光Si电致发光（EL）荧光体的方法，其具有由Si荧光体制成的EL器件。该方法包括：用Si纳米晶体沉积富含氧的氧化物（SRO）膜，折射率在1.5至2.1范围内，孔隙率在5至20％的范围内; 并且在氧气氛中对SRO膜进行后退火。 DC溅射或PECVD工艺可用于沉积SRO膜。在一个方面，该方法还包括：HF缓冲氧化物蚀刻（BOE）SRO膜; 并且再次氧化SRO膜，以在SRO膜中的Si纳米晶体周围形成SiO 2层。在一个方面，SRO膜通过在氧气气氛中退火再次氧化。以这种方式，在具有1至5纳米（nm）范围内的厚度的Si纳米晶体周围形成SiO 2层。

118. 发明申请

US20060183305A1 Sputter-deposited rare earth element-doped silicon oxide film with silicon nanocrystals for electroluminescence applications 失效
标题翻译：溅射沉积的稀土元素掺杂氧化硅膜与硅纳米晶体用于电致发光应用
公开(公告)号：US20060183305A1
公开(公告)日：2006-08-17
申请号：US11334015
申请日：2006-01-18
申请人： Wei Gao , Tingkai Li , Robert Barrowcliff , Yoshi Ono , Sheng Hsu
发明人： Wei Gao , Tingkai Li , Robert Barrowcliff , Yoshi Ono , Sheng Hsu
IPC分类号： H01L21/425
CPC分类号： H05B33/145 , H01L21/3115 , H01L31/03046 , Y02E10/544
摘要： A method is provided for forming a rare earth (RE) element-doped silicon (Si) oxide film with nanocrystalline (nc) Si particles. The method comprises: providing a first target of Si, embedded with a first rare earth element; providing a second target of Si; co-sputtering the first and second targets; forming a Si-rich Si oxide (SRSO) film on a substrate, doped with the first rare earth element; and, annealing the rare earth element-doped SRSO film. The first target is doped with a rare earth element such as erbium (Er), ytterbium (Yb), cerium (Ce), praseodymium (Pr), or terbium (Tb). The sputtering power is in the range of about 75 to 300 watts (W). Different sputtering powers are applied to the two targets. Also, deposition can be controlled by varying the effective areas of the two targets. For example, one of the targets can be partially covered.
摘要翻译：提供了一种用于形成具有纳米晶体（nc）Si颗粒的稀土（RE）元素掺杂硅（Si）氧化物膜的方法。该方法包括：提供嵌入有第一稀土元素的Si的第一靶; 提供Si的第二个目标; 共溅射第一和第二个目标; 在掺杂有第一稀土元素的衬底上形成富Si氧化硅（SRSO）膜; 并对稀土元素掺杂的SRSO膜退火。第一靶用铒（Er），镱（Yb），铈（Ce），镨（Pr）或铽（Tb）等稀土元素掺杂。溅射功率在约75至300瓦（W）的范围内。不同的溅射功率被应用于两个目标。此外，可以通过改变两个目标的有效面积来控制沉积。例如，其中一个目标可以被部分覆盖。

119. 发明申请

US20060073623A1 METHODS OF FORMING A MICROLENS ARRAY OVER A SUBSTRATE EMPLOYING A CMP STOP 失效
标题翻译：在使用CMP停止的基板上形成微阵列的方法
公开(公告)号：US20060073623A1
公开(公告)日：2006-04-06
申请号：US10956789
申请日：2004-09-30
申请人： John Conley , Yoshi Ono , Wei Gao , David Evans
发明人： John Conley , Yoshi Ono , Wei Gao , David Evans
IPC分类号： H01L21/00
CPC分类号： H01L21/31053 , H01L21/31133 , H01L27/14627 , H01L27/14685
摘要： A method of forming a microlens structure is provided along with a CCD array structure employing a microlens array. An embodiment of the method comprises providing a substrate having a surface with photo-elements on the surface; depositing a transparent material overlying the surface of the substrate; depositing a CMP stop overlying the transparent material; depositing a lens-shaping layer overlying the CMP stop layer; depositing and patterning a photoresist layer overlying the lens-shaping layer to form openings to expose the lens-shaping layer; introducing a first isotropic etchant into the openings and etching the lens-shaping layer where exposed to form initial lens shapes having a radius; stripping the photoresist; exposing the lens-shaping layer to a second isotropic etchant to increase the radius of the lens shapes; transferring the lens shape through the CMP stop layer into the transparent material using an anisotropic etch; and depositing a lens material overlying the transparent material, whereby the lens shapes are at least partially filled with lens material. Planarizing the lens material using CMP and stopping at the CMP stop layer.
摘要翻译：提供一种形成微透镜结构的方法以及采用微透镜阵列的CCD阵列结构。该方法的一个实施例包括提供具有在表面上具有光元件的表面的基底; 沉积覆盖衬底表面的透明材料; 沉积覆盖透明材料的CMP停止点; 沉积覆盖CMP停止层的透镜成形层; 沉积和图案化覆盖透镜成形层的光致抗蚀剂层以形成露出透镜成形层的开口; 在开口中引入第一各向同性蚀刻剂并蚀刻暴露于其中形成具有半径的初始透镜形状的透镜成形层; 剥离光刻胶; 将透镜成形层暴露于第二各向同性蚀刻剂以增加透镜形状的半径; 使用各向异性蚀刻将透镜形状通过CMP停止层转移到透明材料中; 以及沉积覆盖透明材料的透镜材料，由此透镜形状至少部分地被透镜材料填充。使用CMP对透镜材料进行平面化，并在CMP停止层处停止。

120. 发明申请

US20050253136A1 Electroluminescent device 失效
标题翻译：电致发光器件
公开(公告)号：US20050253136A1
公开(公告)日：2005-11-17
申请号：US10836669
申请日：2004-04-30
申请人： Yoshi Ono , Wei Gao , John Conley , Osamu Nishio , Keizo Sakiyama
发明人： Yoshi Ono , Wei Gao , John Conley , Osamu Nishio , Keizo Sakiyama
IPC分类号： G09F9/30 , G09F9/00 , H01L27/32 , H01L29/08 , H01L33/18 , H01L33/28 , H01L33/34 , H01L35/24
CPC分类号： H01L33/28 , H01L33/18 , H01L33/34 , Y10S977/95
摘要： A method is provided for forming an electroluminescent device. The method comprises: providing a type IV semiconductor material substrate; forming a p+/n+ junction in the substrate, typically a plurality of interleaved p+/n+ junctions are formed; and, forming an electroluminescent layer overlying the p+/n+ junction(s) in the substrate. The type IV semiconductor material substrate can be Si, C, Ge, SiGe, or SiC. For example, the substrate can be Si on insulator (SOI), bulk Si, Si on glass, or Si on plastic. The electroluminescent layer can be a material such as nanocrystalline Si, nanocrystalline Ge, fluorescent polymers, or type II-VI materials such as ZnO, ZnS, ZnSe, CdSe, and CdS. In some aspect, the method further comprises forming an insulator film interposed between the substrate and the electroluminescent layer. In another aspect, the method comprises forming a conductive electrode overlying the electroluminescent layer.
摘要翻译：提供了形成电致发光器件的方法。该方法包括：提供IV型半导体材料基板; 在衬底中形成p + / n +结，通常形成多个交错的p + / n +结; 并且形成覆盖衬底中的p + / n +结的电致发光层。 IV型半导体材料基板可以是Si，C，Ge，SiGe或SiC。例如，衬底可以是绝缘体上的Si（SOI），玻璃上的体积Si，Si或塑料上的Si。电致发光层可以是诸如纳米晶体Si，纳米晶体Ge，荧光聚合物或诸如ZnO，ZnS，ZnSe，CdSe和CdS的II-VI族材料的材料。在一些方面，所述方法还包括形成介于基片和电致发光层之间的绝缘膜。另一方面，该方法包括形成覆盖电致发光层的导电电极。

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