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    • 111. 发明申请
    • CONTINUOUS LARGE AREA IMAGING AND DISPLAY ARRAYS USING READOUT ARRAYS FABRICATED IN SILICON-ON-GLASS SUBSTRATES
    • 连续的大面积成像和显示阵列使用在硅玻璃基板上制作的读数阵列
    • US20120122267A1
    • 2012-05-17
    • US13357694
    • 2012-01-25
    • Timothy J. Tredwell
    • Timothy J. Tredwell
    • H01L31/18
    • H01L31/101H01L27/14632H01L27/14663H01L27/14687H01L31/115
    • A vertically-integrated image sensor is proposed with the performance characteristics of single crystal silicon but with the area coverage and cost of arrays fabricated on glass. The image sensor can include a backplane array having readout elements implemented in silicon-on-glass, a frontplane array of photosensitive elements vertically integrated above the backplane, and an interconnect layer disposed between the backplane array and the image sensing array. Since large area silicon-on-glass backplanes are formed by tiling thin single-crystal silicon layers cleaved from a thick silicon wafer side-by-side on large area glass gaps between the tiled silicon backplane would normally result in gaps in the image captured by the array. Therefore, embodiments further propose that the pixel pitch in both horizontal and vertical directions of the frontplane be larger than the pixel pitch of the backplane, with the pixel pitch difference being sufficient that the frontplane bridges the gap between backplane tiles.
    • 提出了一种垂直集成的图像传感器,其具有单晶硅的性能特性,但具有在玻璃上制造的阵列的面积覆盖和成本。 图像传感器可以包括具有实现在玻璃上玻璃上的读出元件的背板阵列,垂直集成在背板上方的感光元件的前平面阵列,以及布置在背板阵列和图像感测阵列之间的互连层。 由于大面积的硅玻璃背板是通过在平铺的硅背板之间的大面积玻璃间隙上平铺从厚硅晶片并排分离的薄的单晶硅层而形成的,这通常会导致图像中的间隙 阵列。 因此,实施例进一步提出,前平面的水平和垂直方向上的像素间距大于背板的像素间距,像素间距差足以使前平面桥接背板瓦片之间的间隙。
    • 112. 发明申请
    • DIGITAL RADIOGRAPHIC FLAT-PANEL IMAGING ARRAY WITH DUAL HEIGHT SEMICONDUCTOR AND METHOD OF MAKING SAME
    • 具有双高精度半导体的数字放射平面成像阵列及其制造方法
    • US20110210382A1
    • 2011-09-01
    • US13104999
    • 2011-05-11
    • Timothy J. TredwellJackson Lai
    • Timothy J. TredwellJackson Lai
    • H01L31/14
    • H01L27/14601H01L31/1896Y02E10/50
    • Method of manufacturing imaging arrays can include providing a silicon tile having a first surface and a second, opposite surface. A buried dielectric layer is formed in the silicon tile between the first and second surfaces to define a bottom silicon layer between the first surface and the dielectric layer. A separation boundary is formed in the silicon tile between the second surface and the dielectric layer to define a top silicon layer between the dielectric layer and the separation boundary and a removable silicon layer between the separation boundary and the second surface. An oxide layer formed on the first surface of the silicon tile and the silicon tile is bonded to a glass substrate at the oxide layer. The silicon tile is separated at the separation boundary to remove the removable silicon layer, exposing the top silicon layer. Semiconductive elements are formed using the exposed top silicon layer.
    • 制造成像阵列的方法可以包括提供具有第一表面和第二相对表面的硅砖。 在第一和第二表面之间的硅瓦片中形成掩埋介质层,以在第一表面和介电层之间限定底部硅层。 在第二表面和电介质层之间的硅砖中形成分离边界,以在电介质层和分离边界之间限定顶部硅层,以及在分离边界和第二表面之间的可移除的硅层。 形成在硅砖的第一表面上的氧化物层和硅砖在氧化物层处接合到玻璃基板。 硅片在分离边界处分离以除去可移除的硅层,暴露出顶层硅层。 使用暴露的顶部硅层形成半导体元件。
    • 113. 发明授权
    • Digital radiographic flat-panel imaging array with dual height semiconductor and method of making same
    • 具有双高度半导体的数字射线照相平板成像阵列及其制造方法
    • US07968358B2
    • 2011-06-28
    • US12511119
    • 2009-07-29
    • Timothy J. TredwellJackson Lai
    • Timothy J. TredwellJackson Lai
    • H01L21/00
    • H01L27/14601H01L31/1896Y02E10/50
    • A method of manufacturing an imaging array includes providing a silicon tile having a first surface and a second, opposite surface. A buried dielectric layer is formed in the silicon tile between the first and second surfaces to define a bottom silicon layer between the first surface and the dielectric layer. A separation boundary is formed in the silicon tile between the second surface and the dielectric layer to define a top silicon layer between the dielectric layer and the separation boundary and a removable silicon layer between the separation boundary and the second surface. An oxide layer is formed on the first surface of the silicon tile and the silicon tile is bonded to a glass substrate at the oxide layer. The silicon tile is separated at the separation boundary to remove the removable silicon layer, exposing the top silicon layer. Semiconductive elements are formed using the exposed top silicon layer.
    • 制造成像阵列的方法包括提供具有第一表面和第二相对表面的硅砖。 在第一和第二表面之间的硅瓦片中形成掩埋介质层,以在第一表面和介电层之间限定底部硅层。 在第二表面和电介质层之间的硅砖中形成分离边界,以在电介质层和分离边界之间限定顶部硅层,以及在分离边界和第二表面之间的可移除的硅层。 在硅砖的第一表面上形成氧化物层,并且在氧化物层处将硅瓦贴合到玻璃基板上。 硅片在分离边界处分离以除去可移除的硅层,暴露出顶层硅层。 使用暴露的顶部硅层形成半导体元件。
    • 115. 发明申请
    • DIGITAL RADIOGRAPHIC FLAT-PANEL IMAGING ARRAY WITH DUAL HEIGHT SEMICONDUCTOR AND METHOD OF MAKING SAME
    • 具有双高精度半导体的数字放射平面成像阵列及其制造方法
    • US20110024774A1
    • 2011-02-03
    • US12511119
    • 2009-07-29
    • Timothy J. TredwellJackson Lai
    • Timothy J. TredwellJackson Lai
    • H01L33/00
    • H01L27/14601H01L31/1896Y02E10/50
    • A method of manufacturing an imaging array includes providing a silicon tile having a first surface and a second, opposite surface. A buried dielectric layer is formed in the silicon tile between the first and second surfaces to define a bottom silicon layer between the first surface and the dielectric layer. A separation boundary is formed in the silicon tile between the second surface and the dielectric layer to define a top silicon layer between the dielectric layer and the separation boundary and a removable silicon layer between the separation boundary and the second surface. An oxide layer is formed on the first surface of the silicon tile and the silicon tile is bonded to a glass substrate at the oxide layer. The silicon tile is separated at the separation boundary to remove the removable silicon layer, exposing the top silicon layer. Semiconductive elements are formed using the exposed top silicon layer.
    • 制造成像阵列的方法包括提供具有第一表面和第二相对表面的硅砖。 在第一和第二表面之间的硅瓦片中形成掩埋介质层,以在第一表面和介电层之间限定底部硅层。 在第二表面和电介质层之间的硅砖中形成分离边界,以在电介质层和分离边界之间限定顶部硅层,以及在分离边界和第二表面之间的可移除的硅层。 在硅砖的第一表面上形成氧化物层,并且在氧化物层处将硅瓦贴合到玻璃基板上。 硅片在分离边界处分离以除去可移除的硅层,暴露出顶层硅层。 使用暴露的顶部硅层形成半导体元件。
    • 116. 发明申请
    • CONTINUOUS LARGE AREA IMAGING AND DISPLAY ARRAYS USING READOUT ARRAYS FABRICATED IN SILICON-ON-GLASS SUBSTRATES
    • 连续的大面积成像和显示阵列使用在硅玻璃基板上制作的读数阵列
    • US20100320556A1
    • 2010-12-23
    • US12488074
    • 2009-06-19
    • Timothy J. Tredwell
    • Timothy J. Tredwell
    • H01L31/0248H01L21/77
    • H01L31/101H01L27/14632H01L27/14663H01L27/14687H01L31/115
    • A vertically-integrated image sensor is proposed with the performance characteristics of single crystal silicon but with the area coverage and cost of arrays fabricated on glass. The image sensor can include a backplane array having readout elements implemented in silicon-on-glass, a frontplane array of photosensitive elements vertically integrated above the backplane, and an interconnect layer disposed between the backplane array and the image sensing array. Since large area silicon-on-glass backplanes are formed by tiling thin single-crystal silicon layers cleaved from a thick silicon wafer side-by-side on large area glass gaps between the tiled silicon backplane would normally result in gaps in the image captured by the array. Therefore, embodiments further propose that the pixel pitch in both horizontal and vertical directions of the frontplane be larger than the pixel pitch of the backplane, with the pixel pitch difference being sufficient that the frontplane bridges the gap between backplane tiles.
    • 提出了一种垂直集成的图像传感器,其具有单晶硅的性能特性,但具有在玻璃上制造的阵列的面积覆盖和成本。 图像传感器可以包括具有实现在玻璃上玻璃上的读出元件的背板阵列,垂直集成在背板上方的感光元件的前平面阵列,以及布置在背板阵列和图像感测阵列之间的互连层。 由于大面积的硅玻璃背板是通过在平铺的硅背板之间的大面积玻璃间隙上平铺从厚硅晶片并排分离的薄的单晶硅层而形成的,通常会导致图像中的间隙 阵列。 因此,实施例进一步提出,前平面的水平和垂直方向上的像素间距大于背板的像素间距,像素间距差足以使前平面桥接背板瓦片之间的间隙。
    • 118. 发明授权
    • Printer capable of forming an image on a receiver substrate according to type of receiver substrate and a method of assembling the printer
    • 能够根据接收器基板的类型在接收器基板上形成图像的打印机以及组装打印机的方法
    • US06527356B1
    • 2003-03-04
    • US09586611
    • 2000-06-02
    • Robert W. SpurrKurt M. SangerTimothy J. Tredwell
    • Robert W. SpurrKurt M. SangerTimothy J. Tredwell
    • B41J2938
    • B41J29/393B41J11/009
    • A printer capable of forming an image on a receiver substrate according to type of receiver substrate, and a method of assembling the printer. An identifier containing identifier information is associated with each component of the receiver substrate which, for example, comprises paper and, optionally, laminate media. A sensor is disposed to read the identifier information so that an image forming operation can be adjusted based on identified receiver substrate components and media. For example transponder, serving as the identifier, is coupled to a memory device capable of storing information characteristic of media type. A transceiver, serving as the sensor, is disposed within the printer. The transceiver includes antennae disposed for polling an individual transponder attached to each media type. The transponder receives a first radio frequency field from the transceiver and, deriving power and address information from the first frequency, then generates a second radio frequency field in response. The second radio frequency field is characteristic of the data stored in the memory. As instructed by a control logic processor, the transceiver can both read manufacturing data from the transponder concerning the media type or write usage and processing data to the transponder for storage in the memory.
    • 一种能够根据接收器基板的类型在接收器基板上形成图像的打印机以及组装打印机的方法。 包含标识符信息的标识符与例如包含纸和可选地层压介质的接收器基板的每个部件相关联。 设置传感器以读取标识符信息,使得可以基于所识别的接收器基板部件和介质来调整图像形成操作。 例如,作为标识符的应答器被耦合到能够存储介质类型的信息特性的存储器件。 用作传感器的收发器设置在打印机内。 收发器包括设置用于轮询连接到每种媒体类型的单个应答器的天线。 应答器从收发器接收第一射频场,并且从第一频率导出功率和地址信息,然后产生响应的第二射频场。 第二射频场是存储在存储器中的数据的特征。 根据控制逻辑处理器的指示,收发器可以从应答器读取关于媒体类型的制造数据或将应用程序的写入使用和处理数据读取到存储器中。