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111. 发明授权

US4298529A Alkoxyimino dioxy butyric acid derivatives 失效
标题翻译：烷氧基亚氨基二氧代丁酸衍生物
公开(公告)号：US4298529A
公开(公告)日：1981-11-03
申请号：US101527
申请日：1979-12-10
申请人： Ikuo Ueda , Takao Takaya , Masakazu Kobayashi , Takashi Masugi , Hisashi Takasugi , Hiromu Kochi , Tadashi Kitaguchi
发明人： Ikuo Ueda , Takao Takaya , Masakazu Kobayashi , Takashi Masugi , Hisashi Takasugi , Hiromu Kochi , Tadashi Kitaguchi
IPC分类号： C07D317/30 , C07D319/06 , C07D501/04 , C07D501/14 , C07D501/20 , C07D317/28
CPC分类号： C07D317/30 , C07D319/06
摘要： The invention relates to new antimicrobially active 3-cephem compounds, processes for preparing such compounds, new intermediate compounds comprising alkoxyimino dioxy butyric acid derivatives useful in said processes, and processes for preparation of said intermediates.
摘要翻译：本发明涉及新的抗微生物活性3-头孢烯化合物，制备这种化合物的方法，包括可用于所述方法的烷氧基亚氨基二氧基丁酸衍生物的新中间体化合物，以及所述中间体的制备方法。

112. 发明授权

US09801929B2 Immune tolerance inducer 有权
公开(公告)号：US09801929B2
公开(公告)日：2017-10-31
申请号：US14237763
申请日：2012-07-13
申请人： Ko Rii , Kazuo Sakurai , Masakazu Kobayashi , Hironori Ando , Sadaharu Higuchi , Shiro Takahara
发明人： Ko Rii , Kazuo Sakurai , Masakazu Kobayashi , Hironori Ando , Sadaharu Higuchi , Shiro Takahara
IPC分类号： A61K31/70 , C07H21/02 , C07H21/04 , A61K39/00 , A61K31/7105 , A61K31/716 , C12N15/11 , C12N15/113 , C12N5/00
CPC分类号： A61K39/0013 , A61K31/7105 , A61K31/716 , A61K2039/57 , C12N15/111 , C12N15/113 , C12N15/1138 , C12N2310/315 , C12N2320/32 , C12N2320/50 , C12N2310/14 , C12N2310/3519
摘要： An object of the present invention is to provide a drug and a method for effectively inducing donor-specific immune tolerance in a recipient in transplantation therapy. A complex of an siRNA for a costimulatory factor and schizophyllan is delivered to a Dectin-1 expressing cell which specifically recognizes schizophyllan to regulate the function of the Dectin-1 expressing cell, and therefore can induce immunosuppression effect as well as induce immune tolerance effectively.

113. 发明授权

US09713636B2 Nucleic acid/polysaccharide complex 有权
公开(公告)号：US09713636B2
公开(公告)日：2017-07-25
申请号：US14001694
申请日：2012-02-15
申请人： Ko Rii , Kazuo Sakurai , Masakazu Kobayashi , Hironori Ando , Sadaharu Higuchi , Shiro Takahara
发明人： Ko Rii , Kazuo Sakurai , Masakazu Kobayashi , Hironori Ando , Sadaharu Higuchi , Shiro Takahara
IPC分类号： A61K31/70 , C07H21/02 , C07H21/04 , A61K39/00 , A61K31/7105 , A61K31/716 , C12N15/11 , C12N15/113 , C12N5/00
CPC分类号： A61K39/0013 , A61K31/7105 , A61K31/716 , A61K2039/57 , C12N15/111 , C12N15/113 , C12N15/1138 , C12N2310/315 , C12N2320/32 , C12N2320/50 , C12N2310/14 , C12N2310/3519
摘要： A highly stable nucleic acid-polysaccharide complex of an siRNA and schizophyllan is formed by adding polydeoxyadenine in which at least part of the phosphodiester link portion is phosphorothioated to an siRNA and allowing the siRNA and schizophyllan to form a complex.

114. 发明授权

US09096947B2 SiC single crystal, production method therefor, SiC wafer and semiconductor device 有权
标题翻译： SiC单晶，其制造方法，SiC波导和半导体器件
公开(公告)号：US09096947B2
公开(公告)日：2015-08-04
申请号：US14119710
申请日：2012-06-04
申请人： Itaru Gunjishima , Keisuke Shigetoh , Yasushi Urakami , Masanori Yamada , Ayumu Adachi , Masakazu Kobayashi
发明人： Itaru Gunjishima , Keisuke Shigetoh , Yasushi Urakami , Masanori Yamada , Ayumu Adachi , Masakazu Kobayashi
IPC分类号： H01L21/00 , C30B23/02 , C30B29/36 , H01L21/02 , C30B23/00 , H01L29/16
CPC分类号： C30B23/025 , C30B23/005 , C30B29/36 , H01L21/02378 , H01L21/0243 , H01L21/02433 , H01L21/02529 , H01L21/02587 , H01L21/02609 , H01L29/1608 , Y10T428/21
摘要： When an SiC single crystal having a large diameter of a {0001} plane is produced by repeating a-plane growth, the a-plane growth of the SiC single crystal is carried out so that a ratio Sfacet (=S1×100/S2) of an area (S1) of a Si-plane side facet region to a total area (S2) of the growth plane is maintained at 20% or less.
摘要翻译：当通过重复a面生长产生具有{0001}面大直径的SiC单晶时，进行SiC单晶的a面生长，使得Sfacet（= S1×100 / S2）的Si平面侧面面积（S1）与生长面的总面积（S2）保持在20％以下。

115. 发明授权

US08589651B2 Method for supporting migration destination decision and management system 失效
标题翻译：支持移民目的地决策和管理系统的方法
公开(公告)号：US08589651B2
公开(公告)日：2013-11-19
申请号：US13001725
申请日：2010-10-07
申请人： Masakazu Kobayashi , Tatsundo Aoshima , Yasufumi Uchiyama
发明人： Masakazu Kobayashi , Tatsundo Aoshima , Yasufumi Uchiyama
IPC分类号： G06F12/00
CPC分类号： G06F3/0689 , G06F3/0605 , G06F3/0647
摘要： Each time data is migrated, a management system stores information denoting a migration history related to the migration of the data, in history management information. The management system receives an input of an administrator-desired attribute condition combination for a migration-destination storage device, identifies all device attribute combinations conforming to this attribute condition combination, and calculates multiple migration trends based on each device attribute combination and the history management information. The management system identifies, from among the multiple migration trends, a migration trend to which a specified migration-source storage device belongs, and displays information denoting at least this identified migration trend.
摘要翻译：每次迁移数据时，管理系统将表示与数据的迁移有关的迁移历史的信息存储在历史管理信息中。管理系统接收用于迁移目的地存储设备的管理员期望的属性条件组合的输入，识别符合该属性条件组合的所有设备属性组合，并且基于每个设备属性组合和历史管理信息来计算多个迁移趋势。管理系统从多个迁移趋势中确定指定的迁移源存储设备所属的迁移趋势，并显示表示至少指定的迁移趋势的信息。

116. 发明授权

US08141770B2 Conductive ball mounting method and surplus ball removing apparatus 有权
标题翻译：导电球安装方法和剩余球除去装置
公开(公告)号：US08141770B2
公开(公告)日：2012-03-27
申请号：US12333619
申请日：2008-12-12
申请人： Fumio Sunohara , Kiyoaki Iida , Masakazu Kobayashi , Kesami Maruyama
发明人： Fumio Sunohara , Kiyoaki Iida , Masakazu Kobayashi , Kesami Maruyama
IPC分类号： B23K35/12 , B23K3/06
CPC分类号： H05K3/3478 , B23K1/0016 , B23K3/0623 , H01L21/4853 , H01L24/742 , H01L24/97 , H01L2224/11003 , H01L2224/11005 , H01L2224/11334 , H01L2224/16225 , H01L2224/81193 , H01L2224/97 , H01L2924/01005 , H01L2924/01006 , H01L2924/01029 , H01L2924/15311 , H05K2203/0195 , H05K2203/041 , H05K2203/0557 , H01L2224/81
摘要： A surplus ball removing apparatus including a substrate stage, a substrate including a connection pad, a mask with opening to supply conductive ball onto the substrate, a surplus ball adhering head for removing surplus ball mounted on the substrate, adhering head moving system, an image processing portion, an adhesive material stage, and a ball recovering stage.
摘要翻译：一种多余的球除去装置，包括：基底台，包括连接垫的基板，具有向基板上供给导电球的开口的掩模;用于去除安装在基板上的多余的球的多余的球粘附头;粘合的头部移动系统;图像处理部分，粘合剂阶段和球回收阶段。

117. 发明申请

US20120012162A1 SOLAR BATTERY MODULE AND METHOD FOR MANUFACTURING SOLAR BATTERY MODULE 审中-公开
标题翻译：太阳能电池模块和制造太阳能电池模块的方法
公开(公告)号：US20120012162A1
公开(公告)日：2012-01-19
申请号：US13258845
申请日：2010-03-15
申请人： Masakazu Kobayashi
发明人： Masakazu Kobayashi
IPC分类号： H01L31/048 , H01L31/18
CPC分类号： H01L31/02013 , H02S40/34 , Y02E10/50
摘要： A solar battery module (1) serving includes a first plate-like member (11) having translucency and serving as a light receiving face, a second plate-like member (12) having translucency, a solar battery (13), and a translucent sealing resin portion (14) provided for sealing the solar battery (13) between the first plate-like member (11) and the second plate-like member (12). The second plate-like member (12) has a lead-wire lead-out hole (12h) through which a lead wire (17) connected to the solar battery (13) is led out, and the translucent sealing resin portion (14) is formed extending between the lead wire (17) and the lead-wire lead-out hole (12h).
摘要翻译：一种太阳能电池模块（1），包括具有半透明度并用作光接收面的第一板状构件（11），具有透光性的第二板状构件（12），太阳能电池（13）和半透明用于将太阳能电池（13）密封在第一板状部件（11）和第二板状部件（12）之间的密封树脂部分（14）。第二板状构件（12）具有引出与太阳能电池（13）连接的引线（17）的导线引出孔（12h），透光性密封树脂部（14）形成在引线（17）和引线引出孔（12h）之间延伸。

118. 发明授权

US08043792B2 Composition for formation of antireflection film and pattern formation method using the same 有权
标题翻译：用于形成抗反射膜的组合物和使用其的图案形成方法
公开(公告)号：US08043792B2
公开(公告)日：2011-10-25
申请号：US12448517
申请日：2007-12-21
申请人： Katsutoshi Kuramoto , Masakazu Kobayashi , Yasushi Akiyama
发明人： Katsutoshi Kuramoto , Masakazu Kobayashi , Yasushi Akiyama
IPC分类号： G03F7/11 , H01L21/027
CPC分类号： G03F7/091
摘要： The present invention provides a composition for forming a top anti-reflection coating having such a low refractive index that it can be suitably used in pattern formation with an ArF excimer laser beam, and further the invention also provides a pattern formation method employing that composition. The top anti-reflection coating composition comprises a particular naphthalene compound, a polymer, and a solvent. The composition is used for forming a top anti-reflection coating provided on a photoresist layer. From the photoresist layer, a pattern can be formed by use of light in 160 to 260 nm.
摘要翻译：本发明提供一种用于形成具有这种低折射率的顶部抗反射涂层的组合物，其可以适合用于用ArF准分子激光束进行图案形成，并且本发明还提供了使用该组成的图案形成方法。顶部防反射涂料组合物包含特定的萘化合物，聚合物和溶剂。该组合物用于形成设置在光致抗蚀剂层上的顶部防反射涂层。从光致抗蚀剂层可以通过使用160〜260nm的光来形成图案。

119. 发明申请

US20100233634A1 Processing Liquid for Resist Substrate and Method of Processing Resist Substrate Using the Same 有权
标题翻译：用于抗蚀剂基板的处理液和使用其的抗蚀基板的处理方法
公开(公告)号：US20100233634A1
公开(公告)日：2010-09-16
申请号：US12223310
申请日：2007-02-13
申请人： Go Noya , Masakazu Kobayashi , Ryuta Shimazaki
发明人： Go Noya , Masakazu Kobayashi , Ryuta Shimazaki
IPC分类号： G03F7/20 , G03F7/32
CPC分类号： G03F7/425
摘要： The present invention provides a resist substrate treating solution and a method for pattern formation using that treating solution, and thereby problems such as foreign substances on the substrate surface, pattern collapse and pattern roughness can be easily solved at the same time. The treating solution comprises water and an alkylene oxide adduct of a primary amine having a hydrocarbon group of 11 to 30 carbon atoms or of ammonia. The method for pattern formation according to the invention comprises a step of treating the developed pattern with that treating solution.
摘要翻译：本发明提供一种抗蚀剂基板处理液和使用该处理液的图案形成方法，能够容易地同时解决基板表面上的异物，图案塌陷，图案粗糙等问题。处理溶液包含水和碳原子数为11〜30的伯胺或氨的烯化氧加合物。根据本发明的图案形成方法包括用该处理溶液处理显影图案的步骤。

120. 发明申请

US20100003468A1 Method of forming microfined resist pattern 审中-公开
标题翻译：形成微细抗蚀剂图案的方法
公开(公告)号：US20100003468A1
公开(公告)日：2010-01-07
申请号：US12308274
申请日：2007-06-22
申请人： Go Noya , Masakazu Kobayashi , Ryuta Shimazaki
发明人： Go Noya , Masakazu Kobayashi , Ryuta Shimazaki
IPC分类号： B32B3/00 , G03C5/40
CPC分类号： G03F7/40 , H01L21/0273 , Y10T428/24802
摘要： The present invention provides a pattern-producing method for fining a developed resist pattern without increasing the production cost or impairing the production efficiency seriously. This method comprises the step of bringing a resist pattern after development into contact with a treating solution preferably containing a nonionic surfactant for 60 seconds or more, so as to reduce the effective size of the resist pattern formed by the development. The present invention also provides a resist pattern fined by that method.
摘要翻译：本发明提供了一种图案生产方法，用于澄清开发的抗蚀剂图案而不增加生产成本或严重损害生产效率。该方法包括将显影后的抗蚀剂图案与优选含有非离子表面活性剂的处理溶液接触60秒以上的步骤，以减少由显影形成的抗蚀剂图案的有效尺寸。本发明还提供了通过该方法精细化的抗蚀剂图案。

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