专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

111. 发明授权

US08748941B2 Nitride semiconductor device having reduced interface leakage currents 有权
标题翻译：具有降低的界面漏电流的氮化物半导体器件
公开(公告)号：US08748941B2
公开(公告)日：2014-06-10
申请号：US13372065
申请日：2012-02-13
申请人： Daisuke Shibata , Masahiro Hikita , Hidetoshi Ishida , Tetsuzo Ueda
发明人： Daisuke Shibata , Masahiro Hikita , Hidetoshi Ishida , Tetsuzo Ueda
IPC分类号： H01L29/66 , H01L29/20 , H01L29/423 , H01L29/872 , H01L29/778 , H01L29/417 , H01L29/06
CPC分类号： H01L29/7786 , H01L29/0619 , H01L29/0657 , H01L29/2003 , H01L29/41766 , H01L29/42316 , H01L29/7787 , H01L29/872
摘要： A nitride semiconductor device includes a semiconductor multilayer formed on a substrate, a first ohmic electrode and a Schottky electrode spaced apart from each other on the semiconductor multilayer; and a passivation film covering a top of the semiconductor multilayer. The semiconductor multilayer 102 includes a first nitride semiconductor layer, a second nitride semiconductor layer, and a p-type third nitride semiconductor layer 124 sequentially formed on the substrate. The third nitride semiconductor layer contains p-type impurities, and is selectively formed between the first ohmic electrode and the Schottky electrode in contact with the Schottky electrode.
摘要翻译：氮化物半导体器件包括形成在衬底上的半导体层，在半导体多层上彼此间隔开的第一欧姆电极和肖特基电极; 以及覆盖半导体多层的顶部的钝化膜。半导体层叠体102包括顺序形成在基板上的第一氮化物半导体层，第二氮化物半导体层和p型第三氮化物半导体层124。第三氮化物半导体层含有p型杂质，并且选择性地形成在与肖特基电极接触的第一欧姆电极和肖特基电极之间。

112. 发明授权

US08390029B2 Semiconductor device for reducing and/or preventing current collapse 有权
标题翻译：用于减少和/或防止电流崩溃的半导体装置
公开(公告)号：US08390029B2
公开(公告)日：2013-03-05
申请号：US12867427
申请日：2009-01-23
申请人： Hidekazu Umeda , Masahiro Hikita , Tetsuzo Ueda , Tsuyoshi Tanaka , Daisuke Ueda
发明人： Hidekazu Umeda , Masahiro Hikita , Tetsuzo Ueda , Tsuyoshi Tanaka , Daisuke Ueda
IPC分类号： H01L29/00
CPC分类号： H01L29/7786 , H01L29/2003 , H01L29/41766 , H01L29/4236 , H01L29/432 , H01L29/66462
摘要： A semiconductor device includes an undoped GaN layer (103) formed on a substrate (101), an undoped AlGaN layer (104) formed on the undoped GaN layer (103) and having a band gap energy larger than that of the undoped GaN layer (103), a p-type AlGaN layer (105) and a high-concentration p-type GaN layer (106) formed on the undoped AlGaN layer (104), and an n-type AlGaN layer (107) formed on the high-concentration p-type GaN layer (106). A gate electrode (112) which makes ohmic contact with the high-concentration p-type GaN layer (106) is formed on the high-concentration p-type GaN layer (106) in a region thereof exposed through an opening (107a) formed in the n-type AlGaN layer (107).
摘要翻译：半导体器件包括形成在衬底（101）上的未掺杂的GaN层（103），形成在未掺杂的GaN层（103）上并且具有比未掺杂的GaN层的带隙能量大的带隙能量的未掺杂的AlGaN层（104） 103），形成在未掺杂的AlGaN层（104）上的p型AlGaN层（105）和高浓度p型GaN层（106）以及形成在高掺杂AlGaN层上的n型AlGaN层（107）浓度p型GaN层（106）。在高浓度p型GaN层（106）上形成与高浓度p型GaN层（106）欧姆接触的栅电极（112），其形成在通过形成的开口（107a）的部分露出的区域在n型AlGaN层（107）中。

113. 发明申请

US20120146093A1 NITRIDE SEMICONDUCTOR DEVICE 有权
标题翻译：氮化物半导体器件
公开(公告)号：US20120146093A1
公开(公告)日：2012-06-14
申请号：US13372065
申请日：2012-02-13
申请人： Daisuke SHIBATA , Masahiro Hikita , Hidetoshi Ishida , Tetsuzo Ueda
发明人： Daisuke SHIBATA , Masahiro Hikita , Hidetoshi Ishida , Tetsuzo Ueda
IPC分类号： H01L29/78
CPC分类号： H01L29/7786 , H01L29/0619 , H01L29/0657 , H01L29/2003 , H01L29/41766 , H01L29/42316 , H01L29/7787 , H01L29/872
摘要： A nitride semiconductor device includes a semiconductor multilayer formed on a substrate, a first ohmic electrode and a Schottky electrode spaced apart from each other on the semiconductor multilayer; and a passivation film covering a top of the semiconductor multilayer. The semiconductor multilayer 102 includes a first nitride semiconductor layer, a second nitride semiconductor layer, and a p-type third nitride semiconductor layer 124 sequentially formed on the substrate. The third nitride semiconductor layer contains p-type impurities, and is selectively formed between the first ohmic electrode and the Schottky electrode in contact with the Schottky electrode.
摘要翻译：氮化物半导体器件包括形成在衬底上的半导体层，在半导体多层上彼此间隔开的第一欧姆电极和肖特基电极; 以及覆盖半导体多层的顶部的钝化膜。半导体层叠体102包括顺序形成在基板上的第一氮化物半导体层，第二氮化物半导体层和p型第三氮化物半导体层124。第三氮化物半导体层含有p型杂质，并且选择性地形成在与肖特基电极接触的第一欧姆电极和肖特基电极之间。

114. 发明授权

US08129748B2 Nitride semiconductor device and method for fabricating the same 有权
标题翻译：氮化物半导体器件及其制造方法
公开(公告)号：US08129748B2
公开(公告)日：2012-03-06
申请号：US11878352
申请日：2007-07-24
申请人： Yasuhiro Uemoto , Masahiro Hikita , Tetsuzo Ueda , Tsuyoshi Tanaka , Daisuke Ueda
发明人： Yasuhiro Uemoto , Masahiro Hikita , Tetsuzo Ueda , Tsuyoshi Tanaka , Daisuke Ueda
IPC分类号： H01L29/66
CPC分类号： H01L29/7786 , H01L29/1066 , H01L29/2003 , H01L29/4175 , H01L29/7783
摘要： A nitride semiconductor device includes: a first nitride semiconductor layer; a second nitride semiconductor layer formed on the first nitride semiconductor layer and having a wider band gap than the first nitride semiconductor layer; and a third nitride semiconductor layer formed on the second nitride semiconductor layer. A region of the third nitride semiconductor layer located below the gate electrode is formed with a control region having a p-type conductivity, and a region of the third nitride semiconductor layer located between the gate electrode and each of the source electrode and the drain electrode is formed with a high resistive region having a higher resistance than the that of the control region.
摘要翻译：氮化物半导体器件包括：第一氮化物半导体层; 形成在所述第一氮化物半导体层上并且具有比所述第一氮化物半导体层更宽的带隙的第二氮化物半导体层; 以及形成在所述第二氮化物半导体层上的第三氮化物半导体层。位于栅电极下方的第三氮化物半导体层的区域形成有具有p型导电性的控制区域，以及位于栅电极与源电极和漏极之间的第三氮化物半导体层的区域形成有具有比控制区域更高的电阻的高电阻区域。

115. 发明授权

US08089096B2 Field effect transistor with main surface including C-axis 有权
标题翻译：场效应晶体管主表面包括C轴
公开(公告)号：US08089096B2
公开(公告)日：2012-01-03
申请号：US11470316
申请日：2006-09-06
申请人： Hidetoshi Ishida , Masayuki Kuroda , Tetsuzo Ueda
发明人： Hidetoshi Ishida , Masayuki Kuroda , Tetsuzo Ueda
IPC分类号： H01L29/778 , H01L29/04
CPC分类号： H01L29/7787 , H01L29/2003
摘要： A normally-off type field effect transistor includes: a first semiconductor layer which is made of a first hexagonal crystal with 6 mm symmetry and has a main surface including a C-axis of the first hexagonal crystal; a second semiconductor layer which is formed on the main surface of the first semiconductor layer and is made of a second hexagonal crystal with 6 mm symmetry having a band gap different from a band gap of the first hexagonal crystal; and a gate electrode, a source electrode and a drain electrode that are formed on the second semiconductor layer. Here, the film thickness of the first nitride semiconductor layer is 1.5 μm or less and the second semiconductor layer is doped with impurities at a dose of 1×1013 cm−2 or more.
摘要翻译：常关型场效应晶体管包括：第一半导体层，其由具有6mm对称性的第一六边形晶体制成并且具有包括第一六边形晶体的C轴的主表面; 第二半导体层，其形成在所述第一半导体层的主表面上，并且由具有与所述第一六边形晶体的带隙不同的带隙的6mm对称的第二六边形晶体制成; 以及形成在第二半导体层上的栅电极，源电极和漏电极。这里，第一氮化物半导体层的膜厚为1.5μm以下，第二半导体层以1×1013cm-2以上的剂量掺杂杂质。

116. 发明授权

US07974322B2 Nitride semiconductor laser diode 有权
标题翻译：氮化物半导体激光二极管
公开(公告)号：US07974322B2
公开(公告)日：2011-07-05
申请号：US12686839
申请日：2010-01-13
申请人： Tetsuzo Ueda , Daisuke Ueda
发明人： Tetsuzo Ueda , Daisuke Ueda
IPC分类号： H01S5/00
CPC分类号： H01S5/32341 , H01S5/021 , H01S5/2201
摘要： A nitride semiconductor laser device includes: a substrate made of silicon in which a plane orientation of a principal surface is a {100} plane; and a semiconductor laminate that includes a plurality of semiconductor layers formed on the substrate and includes a multiple quantum well active layer, each of the plurality of semiconductor layers being made of group III-V nitride. The semiconductor laminate has a plane parallel to a {011} plane which is a plane orientation of silicon as a cleavage face and the cleavage face constructs a facet mirror.
摘要翻译：氮化物半导体激光器件包括：由主表面的平面取向为{100}面的硅制成的衬底; 以及半导体层叠体，其具有形成在所述基板上的多个半导体层，所述半导体层叠体具有多量子阱活性层，所述多个半导体层中的每一个均由III-V族氮化物构成。半导体层叠体具有与{011}平面平行的平面，其是作为解理面的硅的平面取向，并且切割面构成小平面镜。

117. 发明授权

US07956368B2 Semiconductor light emitting device, lighting module, lighting apparatus, and manufacturing method of semiconductor light emitting device 有权
标题翻译：半导体发光元件，照明模块，照明装置以及半导体发光元件的制造方法
公开(公告)号：US07956368B2
公开(公告)日：2011-06-07
申请号：US12569660
申请日：2009-09-29
申请人： Hideo Nagai , Tetsuzo Ueda , Masaaki Yuri
发明人： Hideo Nagai , Tetsuzo Ueda , Masaaki Yuri
IPC分类号： H01L29/207
CPC分类号： H01L33/38 , H01L25/0753 , H01L33/22 , H01L33/385 , H01L33/50 , H01L33/52 , H01L33/62 , H01L33/641 , H01L33/647 , H01L2221/68363 , H01L2924/0002 , H01L2933/0041 , H01L2924/00
摘要： An LED bare chip which is one type of a semiconductor light emitting device (2) includes a multilayer epitaxial structure (6) composed of a p-GaN layer (12), an InGaN/GaN MQW light emitting layer (14) and an n-GaN layer (16). A p-electrode (18) is formed on the p-GaN layer (12), and an n-electrode (20) is formed on the n-GaN layer (16). An Au plating layer (4) is formed on the p-electrode (18). The Au plating layer (4) supports the multilayer epitaxial structure (6) and conducts heat generated in the light emitting layer (14). The Au plating layer (4) is electrically divided into two portions by a polyimide member (10). One of the two portions (4A) is connected to the p-electrode (18), to be constituted as an anode power supply terminal, and the other portion (4K) is connected to the n-electrode (20) by a wiring (22), to be constituted as a cathode power supply terminal.
摘要翻译：作为一种半导体发光器件（2）的LED裸芯片包括由p-GaN层（12），InGaN / GaN MQW发光层（14）和n（n）组成的多层外延结构（6） -GaN层（16）。在p-GaN层（12）上形成p电极（18），在n-GaN层（16）上形成n电极（20）。在p电极（18）上形成Au镀层（4）。 Au镀层（4）支撑多层外延结构（6）并传导在发光层（14）中产生的热量。 Au镀层（4）通过聚酰亚胺构件（10）电分成两部分。两个部分（4A）中的一个连接到p电极（18），以构成阳极电源端子，另一部分（4K）通过布线（...）连接到n电极（20） 22）构成为阴极电源端子。

118. 发明申请

US20110058586A1 NITRIDE SEMICONDUCTOR LASER 审中-公开
标题翻译：氮化物半导体激光器
公开(公告)号：US20110058586A1
公开(公告)日：2011-03-10
申请号：US12991649
申请日：2009-01-21
申请人： Toshiyuki Takizawa , Tetsuzo Ueda
发明人： Toshiyuki Takizawa , Tetsuzo Ueda
IPC分类号： H01S5/323 , H01S5/22 , H01S5/343 , B82Y99/00
CPC分类号： H01S5/34333 , B82Y20/00 , H01S5/0014 , H01S5/0207 , H01S5/0654 , H01S5/1014 , H01S5/1053 , H01S5/1057 , H01S5/106 , H01S5/164 , H01S5/2201 , H01S5/223 , H01S5/2238 , H01S5/3213 , H01S2304/04 , H01S2304/12
摘要： A projection/recess structure is formed on a base substrate, and a layered structure of a nitride semiconductor laser is formed on the projection/recess structure. InGaN used for an active layer has an In intake efficiency and a growth rate that greatly vary with the plane direction. By use of this characteristic, an active layer structure low in In content and small in well layer thickness can be formed at a light-outgoing end facet by one-time crystal growth, and thus the transition wavelength of the active layer near the light-outgoing end facet can be shortened. As a result, since optical damage due to light absorption at the light-outgoing end facet can be greatly reduced, a nitride semiconductor laser capable of performing high light-output operation can be implemented.
摘要翻译：在基底基板上形成突起/凹部结构，在突起/凹部结构上形成氮化物半导体激光器的层叠结构。用于有源层的InGaN具有In取入效率和随平面方向大幅变化的生长速率。通过使用该特性，可以通过一次晶体生长在光出射端面形成In含量低，阱层厚度小的有源层结构，因此有源层在发光层附近的跃迁波长，出口端面可以缩短。结果，由于可以大大减少由于在光出射端小面处的光吸收而引起的光学损伤，因此可以实现能够进行高光输出操作的氮化物半导体激光器。

119. 发明申请

US20110037101A1 SEMICONDUCTOR DEVICE 审中-公开
标题翻译：半导体器件
公开(公告)号：US20110037101A1
公开(公告)日：2011-02-17
申请号：US12667999
申请日：2009-03-27
申请人： Kazushi Nakazawa , Toshiyuki Takizawa , Tetsuzo Ueda , Daisuke Ueda
发明人： Kazushi Nakazawa , Toshiyuki Takizawa , Tetsuzo Ueda , Daisuke Ueda
IPC分类号： H01L29/205 , H01L29/80 , H01L29/737 , H01L29/20
CPC分类号： H01L29/7371 , H01L27/0605 , H01L29/1066 , H01L29/2003 , H01L29/207 , H01L29/432 , H01L29/7787
摘要： A semiconductor device includes an undoped GaN layer (13), an undoped AlGaN layer (14), and a p-type GaN layer (15). In the p-type GaN layer (15), highly resistive regions (15a) are selectively formed. Resistance of the highly resistive regions (15a) can be increased by introducing a transition metal, for example, titanium.
摘要翻译：半导体器件包括未掺杂的GaN层（13），未掺杂的AlGaN层（14）和p型GaN层（15）。在p型GaN层（15）中，选择性地形成高电阻区域（15a）。可以通过引入过渡金属例如钛来增加高电阻区域（15a）的电阻。

120. 发明申请

US20100327320A1 NITRIDE SEMICONDUCTOR DEVICE 审中-公开
标题翻译：氮化物半导体器件
公开(公告)号：US20100327320A1
公开(公告)日：2010-12-30
申请号：US12879565
申请日：2010-09-10
申请人： Hiroaki Ueno , Manabu Yanagihara , Tetsuzo Ueda , Yasuhiro Uemoto , Tsuyoshi Tanaka , Daisuke Ueda
发明人： Hiroaki Ueno , Manabu Yanagihara , Tetsuzo Ueda , Yasuhiro Uemoto , Tsuyoshi Tanaka , Daisuke Ueda
IPC分类号： H01L29/80
CPC分类号： H01L29/7783 , H01L21/02381 , H01L21/0242 , H01L21/02458 , H01L21/02502 , H01L21/0254 , H01L29/1066 , H01L29/2003 , H01L29/4175 , H01L29/432 , H01L29/452 , H01L29/7787
摘要： A nitride semiconductor device includes: a first semiconductor layer made of first nitride semiconductor; a second semiconductor layer formed on a principal surface of the first semiconductor layer and made of second nitride semiconductor having a bandgap wider than that of the first nitride semiconductor; a control layer selectively formed on, or above, an upper portion of the second semiconductor layer and made of third nitride semiconductor having a p-type conductivity; source and drain electrodes formed on the second semiconductor layer at respective sides of the control layer; a gate electrode formed on the control layer; and a fourth semiconductor layer formed on a surface of the first semiconductor layer opposite to the principal surface, having a potential barrier in a valence band with respect to the first nitride semiconductor and made of fourth nitride semiconductor containing aluminum.
摘要翻译：氮化物半导体器件包括：由第一氮化物半导体制成的第一半导体层; 第二半导体层，其形成在第一半导体层的主表面上并且由具有比第一氮化物半导体的带隙宽的第二氮化物半导体构成; 选择性地形成在所述第二半导体层的上部并且由上述第二半导体层的上部制成的具有p型导电性的第三氮化物半导体的控制层; 源极和漏极，形成在控制层的相应侧上的第二半导体层上; 形成在所述控制层上的栅电极; 以及形成在与所述主表面相对的所述第一半导体层的表面上的第四半导体层，所述第四半导体层相对于所述第一氮化物半导体具有价带中的势垒，并且由包含铝的第四氮化物半导体制成。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式