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111. 发明授权

US5049365A Process for treating air containing hydrocarbon vapor with a composite adsorbent material 失效
标题翻译：用复合吸附材料处理含有烃蒸汽的空气的方法
公开(公告)号：US5049365A
公开(公告)日：1991-09-17
申请号：US486861
申请日：1990-03-01
申请人： Seiji Okabayashi , Hirofumi Watanabe , Kiyoshi Abe , Masahide Ogawa
发明人： Seiji Okabayashi , Hirofumi Watanabe , Kiyoshi Abe , Masahide Ogawa
IPC分类号： B01D53/02 , B01J20/20 , B01J20/28
CPC分类号： B01J20/20
摘要： Disclosed is a composite adsorbent consisting of a molded body of a homogeneous mixture comprising powdery active carbon and hydrous alumina of the pseudoboehmite type. This composite adsorbent has high mechanical strength and abrasion resistance. This composite adsorbent is excellent in the capacity of adsorbing organic components such as gasoline, and the desorption of the adsorbed components can be easily accomplished at a high desorption ratio. These excellent capacities are retained even if the adsorption-desorption cycle is repeated. Accordingly, this composite adsorbent is especially valuable as the adsorbent for an automobile canister.

112. 发明授权

US5028823A Delay device with intermittent capacitor discharge 失效
标题翻译：具有间歇电容放电的延时器
公开(公告)号：US5028823A
公开(公告)日：1991-07-02
申请号：US372964
申请日：1989-06-29
申请人： Hirofumi Watanabe
发明人： Hirofumi Watanabe
IPC分类号： H03K17/28 , H03K4/02 , H03K5/05
CPC分类号： H03K4/023 , H03K5/05
摘要： A delay device has an oscillation circuit 1, a transistor 201 turned on and off by a signal from the oscillation circuit; and a delay circuit comprising a capacitor 203 and a resistor 202 connected to the transistor so that the delay circuit is intermittently controlled by the on-off operations of the transistor.

113. 发明授权

US09762822B2 Imaging device including a phototransistor, method of driving the imaging device, and camera including the imaging device 有权
公开(公告)号：US09762822B2
公开(公告)日：2017-09-12
申请号：US14463743
申请日：2014-08-20
申请人： Takaaki Negoro , Hirofumi Watanabe , Katsuhiko Aisu , Kazuhiro Yoneda , Katsuyuki Sakurano
发明人： Takaaki Negoro , Hirofumi Watanabe , Katsuhiko Aisu , Kazuhiro Yoneda , Katsuyuki Sakurano
IPC分类号： H04N5/355 , H01L27/146 , H04N5/3745 , H04N5/378 , H01L27/148 , H04N5/77 , H04N5/374 , H04N5/907
CPC分类号： H04N5/3559 , H01L27/14612 , H01L27/14638 , H01L27/14681 , H01L27/148 , H04N5/35509 , H04N5/3745 , H04N5/37457 , H04N5/378 , H04N5/772 , H04N5/907
摘要： An imaging device includes at least one pixel having a phototransistor which converts light energy into signal charge and varies an amplification factor relative to the intensity of the received light energy, wherein the signal charge of the phototransistor is read out while receiving the light energy with the phototransistor for each pixel.

114. 发明授权

US09472706B2 Image sensor having a plurality of phototransistors separated by trench-gate structures and method of manufacturing the same 有权
标题翻译：图像传感器具有通过沟槽栅极结构分离的多个光电晶体管及其制造方法
公开(公告)号：US09472706B2
公开(公告)日：2016-10-18
申请号：US14560037
申请日：2014-12-04
申请人： Katsuyuki Sakurano , Takaaki Negoro , Katsuhiko Aisu , Kazuhiro Yoneda , Yasukazu Nakatani , Hirofumi Watanabe
发明人： Katsuyuki Sakurano , Takaaki Negoro , Katsuhiko Aisu , Kazuhiro Yoneda , Yasukazu Nakatani , Hirofumi Watanabe
IPC分类号： H01L31/113 , H01L27/146
CPC分类号： H01L31/1136 , H01L27/14614 , H01L27/14623 , H01L27/1463 , H01L27/14638 , H01L27/14643 , H01L27/14689
摘要： A semiconductor device and a method of manufacturing a semiconductor device are disclosed. The method includes forming a trench, in a vertical direction of a semiconductor substrate having a plurality of photoelectric converting elements arranged on the semiconductor device, at positions between the photoelectric converting elements that are next to each other, forming a first conductive-material layer in and above the trench by implanting a first conductive material into the trench after an oxide film is formed on an inner wall of the trench, forming a first conductor by removing the first conductive-material layer excluding a first conductive portion of the first conductive-material layer implanted into the trench, and forming an upper gate electrode above the first conductor, the upper gate electrode configured to be conductive with the first conductor. The semiconductor device includes a semiconductor substrate, an image sensor, a trench, a first conductor, and an upper gate electrode.
摘要翻译：公开了半导体器件和制造半导体器件的方法。该方法包括在彼此相邻的光电转换元件之间的位置处形成在具有布置在半导体器件上的多个光电转换元件的半导体衬底的垂直方向上形成沟槽，形成第一导电材料层并且在沟槽的内壁上形成氧化膜之后，通过将第一导电材料注入到沟槽中并在沟槽之上形成第一导体，通过除去除第一导电材料的第一导电部分之外的第一导电材料层层，并且在第一导体上形成上栅电极，上栅电极被配置为与第一导体导电。半导体器件包括半导体衬底，图像传感器，沟槽，第一导体和上部栅电极。

115. 发明申请

US20160247847A1 SEMICONDUCTOR DEVICE, IMAGING APPARATUS, AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE 审中-公开
标题翻译：半导体器件，成像装置及制造半导体器件的方法
公开(公告)号：US20160247847A1
公开(公告)日：2016-08-25
申请号：US15019451
申请日：2016-02-09
申请人： Yoshinori Ueda , Kazuhiro Yoneda , Katsuhiko Aisu , Yasukazu Nakatani , Takaaki Negoro , Katsuyuki Sakurano , Hirofumi Watanabe
发明人： Yoshinori Ueda , Kazuhiro Yoneda , Katsuhiko Aisu , Yasukazu Nakatani , Takaaki Negoro , Katsuyuki Sakurano , Hirofumi Watanabe
IPC分类号： H01L27/146
CPC分类号： H01L27/14683 , H01L27/1463 , H01L27/14681
摘要： A semiconductor device includes a semiconductor layer, an electrode embedded from a surface of the semiconductor layer to an inside of the semiconductor layer and insulated by an insulation layer, and a structure in which a first semiconductor region of a first conductivity type, a second semiconductor region of a second conductivity type, and a third semiconductor region of the first conductivity type are formed in this order from the surface of the semiconductor layer along the electrode via the insulation layer. The electrode is arranged at a position where no inversion layer is formed by a voltage supplied to the electrode in at least one of an interface of the first semiconductor region and the second semiconductor region and an interface of the second semiconductor region and the third semiconductor region.
摘要翻译：半导体器件包括半导体层，从半导体层的表面到半导体层的内部并被绝缘层绝缘的电极，以及其中第一导电类型的第一半导体区域，第二半导体第二导电类型的区域和第一导电类型的第三半导体区域从半导体层的沿着电极的表面经由绝缘层依次形成。在第一半导体区域和第二半导体区域的界面中的至少一个以及第二半导体区域和第三半导体区域的界面中的至少一个中，电极被配置在没有形成反转层的位置，。

116. 发明申请

US20160126271A1 SOLID-STATE IMAGE SENSING DEVICE 有权
标题翻译：固态图像传感装置
公开(公告)号：US20160126271A1
公开(公告)日：2016-05-05
申请号：US14847567
申请日：2015-09-08
申请人： Katsuyuki Sakurano , Takaaki Negoro , Yoshinori Ueda , Kazuhiro Yoneda , Katsuhiko Aisu , Yasukazu Nakatani , Hirofumi Watanabe
发明人： Katsuyuki Sakurano , Takaaki Negoro , Yoshinori Ueda , Kazuhiro Yoneda , Katsuhiko Aisu , Yasukazu Nakatani , Hirofumi Watanabe
IPC分类号： H01L27/146 , H01L29/868 , H01L29/866
CPC分类号： H01L29/868 , H01L27/14603 , H01L27/1461 , H01L27/14612 , H01L27/1463 , H01L27/14643 , H01L29/866
摘要： A solid-state image sensing device is provided including a first semi-conducting layer of first conductivity, a second semi-conducting layer of first conductivity disposed on the first semi-conducting layer, a semiconductor region of second conductivity different from the first conductivity disposed in the second semi-conducting layer, a deep trench configured to isolate a plurality of neighboring pixels from each other, and an electrode implanted into the deep trench, where the semiconductor region of second conductivity, the second semi-conducting layer, and the first semi-conducting layer are disposed in that order from a proximal side to a distal side, the second semi-conducting layer is split by the deep trench into sections that correspond to the pixels, an impurity concentration of first conductivity of the first semi-conducting layer is higher than an impurity concentration of first conductivity of the second semi-conducting layer, and the deep trench contacts the first semi-conducting layer.
摘要翻译：提供一种固态图像感测装置，包括：第一导电性的第一半导体层，设置在第一半导电层上的第一导电性的第二半导体层，与第一导电性不同的第二导电性半导体区域在第二半导电层中，深沟槽被配置为将多个相邻像素彼此隔离，以及注入到深沟槽中的电极，其中第二导电层的半导体区域，第二半导体层和第一半导体层半导体层从近侧到远侧按顺序设置，第二半导体层被深沟槽分成与像素对应的部分，第一半导电层的第一导电性的杂质浓度层比第二半导体层的第一导电性的杂质浓度高，并且深沟槽接触第一半导体层制作层。

117. 发明申请

US20150070546A1 IMAGING DEVICE, METHOD OF DRIVING IMAGING DEVICE, AND CAMERA 有权
标题翻译：成像装置，驱动成像装置的方法和摄像机
公开(公告)号：US20150070546A1
公开(公告)日：2015-03-12
申请号：US14463743
申请日：2014-08-20
申请人： Takaaki Negoro , Hirofumi Watanabe , Katsuhiko Aisu , Kazuhiro Yoneda , Katsuyuki Sakurano
发明人： Takaaki Negoro , Hirofumi Watanabe , Katsuhiko Aisu , Kazuhiro Yoneda , Katsuyuki Sakurano
IPC分类号： H04N5/355 , H04N5/378 , H04N5/3745 , H01L27/148 , H01L27/146
CPC分类号： H04N5/3559 , H01L27/14612 , H01L27/14638 , H01L27/14681 , H01L27/148 , H04N5/35509 , H04N5/3745 , H04N5/37457 , H04N5/378 , H04N5/772 , H04N5/907
摘要： An imaging device includes at least one pixel having a phototransistor which converts light energy into signal charge and varies an amplification factor relative to the intensity of the received light energy, wherein the signal charge of the phototransistor is read out while receiving the light energy with the phototransistor for each pixel.
摘要翻译：一种成像装置包括至少一个具有光电晶体管的像素，该光电晶体管将光能转换为信号电荷，并相对于所接收的光能的强度改变放大系数，其中光电晶体管的信号电荷在接收光能时读出，光电晶体管为每个像素。

118. 发明授权

US08969810B2 Infrared sensor device 有权
标题翻译：红外传感器装置
公开(公告)号：US08969810B2
公开(公告)日：2015-03-03
申请号：US13795669
申请日：2013-03-12
申请人： Takeshi Nagahisa , Katsuhiko Aisu , Hirofumi Watanabe
发明人： Takeshi Nagahisa , Katsuhiko Aisu , Hirofumi Watanabe
IPC分类号： G01J5/02 , G06M7/00 , G01J1/46 , G01J5/10 , G01J1/42 , G01J5/00
CPC分类号： G01J5/02 , G01J1/4228 , G01J1/46 , G01J5/0025 , G01J5/10
摘要： An infrared sensor device includes a plurality of infrared sensors that is provided in a plurality of divided areas in which an infrared-receiving area is radially divided in one plane; a detector that detects presence or absence of movement of an object in the infrared-receiving area for each of the divided areas based on an output of the infrared sensor; and a determiner that determines whether the object is in a detection area in a predetermined distance range from the infrared sensor, based on an arrangement pattern of the divided areas in which the movement of the object is detected, in an alignment of the divided areas in the infrared-receiving areas.
摘要翻译：红外线传感器装置包括多个红外线传感器，其设置在多个分割区域中，红外线接收区域在一个平面内径向分割; 检测器，其基于所述红外线传感器的输出，检测所述分割区域的红外线接收区域中的物体的存在或不存在; 以及确定器，其基于检测到所述物体的移动的所述划分区域的布置图案，确定所述物体是否在距所述红外线传感器的预定距离范围内的检测区域中，红外线接收区域。

119. 发明授权

US08876225B2 Actuator control unit and electric-mechanical brake unit 有权
标题翻译：执行器控制单元和机电制动单元
公开(公告)号：US08876225B2
公开(公告)日：2014-11-04
申请号：US12018631
申请日：2008-01-23
申请人： Daisuke Yasukawa , Hirofumi Watanabe
发明人： Daisuke Yasukawa , Hirofumi Watanabe
IPC分类号： B60T8/36 , H01L23/52 , H01L23/48 , H01R13/52 , H01R13/621 , B60T13/74
CPC分类号： B60T13/741 , H01R13/5219 , H01R13/6215
摘要： The invention achieves a further downsizing of an actuator control unit. The actuator control unit has a control circuit controlling an actuator, and a bus bar electrically connected to the control circuit and arranged such as to be partially embedded in an inner portion of a resin case and be partially exposed to an outer portion of the resin case. It is preferable to have a projection portion extending in a wiring direction of the bus bar between two bus bars wired adjacently, having a greater height than an embedded plane of the bus bar in the resin case, and made of an insulating material.
摘要翻译：本发明实现了致动器控制单元的进一步的小型化。执行器控制单元具有控制致动器的控制电路和电连接到控制电路并且布置成部分地嵌入树脂壳体的内部并且部分地暴露于树脂壳体的外部的汇流条。优选的是，在母线的布线方向上延伸的两个母线相邻地布置，具有比树脂盒中的汇流条的嵌入平面更大的高度，并且由绝缘材料制成的突出部。

120. 发明授权

US08759772B2 Infrared sensor and infrared array sensor 有权
标题翻译：红外传感器和红外阵列传感器
公开(公告)号：US08759772B2
公开(公告)日：2014-06-24
申请号：US13350875
申请日：2012-01-16
申请人： Hidetaka Noguchi , Hirofumi Watanabe
发明人： Hidetaka Noguchi , Hirofumi Watanabe
IPC分类号： G01J5/20
CPC分类号： G01J5/24 , G01J2005/0077
摘要： An infrared sensor includes a MOSFET sensor, and a current source MOSFET which is connected to the MOSFET sensor in series and constitutes a constant current source for driving the MOSFET sensor with a constant current, wherein a terminal between the MOSFET sensor and the current source MOSFET constitutes a sensor output terminal, the MOSFET sensor is disposed on a heat-insulated structure, the current source MOSFET is disposed outside the heat-insulated structure, and the MOSFET sensor and the current source MOSFET are constituted by a same conductivity type MOSFET and operate in a subthreshold region.
摘要翻译：红外传感器包括MOSFET传感器和电流源MOSFET，其串联连接到MOSFET传感器，并且构成用于以恒定电流驱动MOSFET传感器的恒定电流源，其中MOSFET传感器和电流源MOSFET之间的端子构成传感器输出端子，MOSFET传感器设置在绝热结构上，电流源MOSFET设置在绝热结构的外侧，MOSFET传感器和电流源MOSFET由相同的导电类型的MOSFET构成，并工作在亚阈值区域。

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