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111. 发明授权

US09419035B2 Image sensor with color pixels having uniform light absorption depths 有权
标题翻译：具有均匀光吸收深度的彩色像素的图像传感器
公开(公告)号：US09419035B2
公开(公告)日：2016-08-16
申请号：US13344312
申请日：2012-01-05
申请人： Fei Wu , Hongjun Li , Yin Qian , Hsin-Chih Tai , Howard E. Rhodes , Jizhang Shan
发明人： Fei Wu , Hongjun Li , Yin Qian , Hsin-Chih Tai , Howard E. Rhodes , Jizhang Shan
IPC分类号： H01L27/146 , G02B3/00
CPC分类号： H01L27/14627 , G02B3/0018 , H01L27/1464 , H01L27/14685
摘要： An example image sensor includes first, second, and third micro-lenses. The first micro-lens is in a first color pixel and has a first curvature and a first height. The second micro-lens is in a second color pixel and has a second curvature and a second height. The third micro-lens is in a third color pixel and has a third curvature and a third height. The first curvature is the same as both the second curvature and the third curvature and the first height is greater than the second height and the second height is greater than the third height, such that light absorption depths for the first, second, and third color pixels are the same.
摘要翻译：示例性图像传感器包括第一，第二和第三微透镜。第一微透镜是第一颜色像素并且具有第一曲率和第一高度。第二微透镜处于第二颜色像素中并且具有第二曲率和第二高度。第三微透镜是第三色像素，具有第三曲率和第三高度。第一曲率与第二曲率和第三曲率都相同，第一高度大于第二高度，第二高度大于第三高度，使得第一，第二和第三颜色的光吸收深度像素是相同的。

112. 发明申请

US20090200580A1 Image sensor and pixel including a deep photodetector 审中-公开
标题翻译：图像传感器和像素包括深度光电探测器
公开(公告)号：US20090200580A1
公开(公告)日：2009-08-13
申请号：US12028679
申请日：2008-02-08
申请人： Howard E. Rhodes , Hidetoshi Nozaki , Sohei Manabe
发明人： Howard E. Rhodes , Hidetoshi Nozaki , Sohei Manabe
IPC分类号： H01L27/148 , H01L31/18
CPC分类号： H01L27/14609 , H01L27/14603 , H01L27/1464 , H01L27/14689
摘要： What is disclosed is an apparatus comprising a transfer gate formed on a substrate and a photodiode formed in the substrate next to the transfer gate. The photodiode comprises a shallow N-type collector formed in the substrate, a deep N-type collector formed in the substrate, wherein a lateral side of the deep N-type collector extends at least under the transfer gate, and a connecting N-type collector formed in the substrate between the deep N-type collector and the shallow N-type collector, wherein the connecting implant connects the deep N-type collector and the shallow N-type collector. Also disclosed is a process comprising forming a deep N-type collector in the substrate, forming a shallow N-type collector formed in the substrate, and forming a connecting N-type collector in the substrate between the deep N-type collector and the shallow N-type collector, wherein the connecting implant connects the deep N-type collector and the shallow N-type collector. A transfer gate is formed on the substrate next to the deep photodiode, wherein a lateral side of the deep N-type collector extends at least under the transfer gate. Other embodiments are disclosed and claimed.
摘要翻译：所公开的是一种装置，其包括形成在基板上的转移栅极和形成在基板旁边的光电二极管。光电二极管包括形成在基板中的浅N型集电体，形成在基板中的深N型集电体，其中深N型集电极的侧面至少在传输栅极下延伸，并且连接N型在深N型集电体和浅N型集电体之间的基板中形成的集电体，其中连接注入物连接深N型集电极和浅N型集电极。还公开了一种方法，包括在衬底中形成深N型集电体，形成在衬底中形成的浅N型集电体，并且在深N型集电极和浅层之间的衬底中形成连接的N型集电体 N型集电器，其中连接注入件连接深N型集电器和浅N型集电器。在靠近深度光电二极管的衬底上形成传输栅极，其中深N型集电极的侧面至少在传输栅极下方延伸。公开和要求保护其他实施例。

113. 再颁专利

USRE45357E1 Twin p-well CMOS imager 失效
公开(公告)号：USRE45357E1
公开(公告)日：2015-02-03
申请号：US12714339
申请日：2010-02-26
申请人： Howard E. Rhodes
发明人： Howard E. Rhodes
IPC分类号： H01L31/062 , H01L31/113
CPC分类号： H01L27/14609
摘要： A CMOS imager which includes a substrate voltage pump to bias a doped area of a substrate to prevent leakage into the substrate from the transistors formed in the doped area. The invention also provides a CMOS imager where a photodetector sensor array is formed in a first p-well and readout logic is formed in a second p-well. The first p-well can be selectively doped to optimize cross-talk, collection efficiency and transistor leakage, thereby improving the quantum efficiency of the sensor array while the second p-well can be selectively doped and/or biased to improve the speed and drive of the readout circuitry.

114. 发明授权

US08232133B2 Image sensor with backside passivation and metal layer 有权
标题翻译：具有背面钝化和金属层的图像传感器
公开(公告)号：US08232133B2
公开(公告)日：2012-07-31
申请号：US13191042
申请日：2011-07-26
申请人： Howard E. Rhodes , Hidetoshi Nozaki
发明人： Howard E. Rhodes , Hidetoshi Nozaki
IPC分类号： H01L21/00
CPC分类号： H01L27/14629 , H01L27/14609 , H01L27/14621 , H01L31/02327
摘要： An image sensor includes a semiconductor layer that filters light of different wavelengths. For example, the semiconductor layer absorbs photons of shorter wavelengths and passes more photons of longer wavelengths such that the longer wavelength photons often pass through without being absorbed. An imaging pixel having a photodiode is formed near a front side of the semiconductor layer. A dopant layer is formed below the photodiode near a back side of the semiconductor layer. A mirror that primarily reflects photons of longer visible wavelengths is disposed on the back side of the semiconductor layer.
摘要翻译：图像传感器包括对不同波长的光进行滤光的半导体层。例如，半导体层吸收较短波长的光子并且传递较长波长的更多光子，使得较长波长的光子经常通过而不被吸收。具有光电二极管的成像像素形成在半导体层的正面附近。在半导体层的背面附近的光电二极管附近形成掺杂剂层。主要反射更长可见波长的光子的反射镜设置在半导体层的背面。

115. 发明申请

US20120001242A1 SINGLE POLY CMOS IMAGER 审中-公开
标题翻译：单色CMOS图像
公开(公告)号：US20120001242A1
公开(公告)日：2012-01-05
申请号：US13212649
申请日：2011-08-18
申请人： Howard E. Rhodes
发明人： Howard E. Rhodes
IPC分类号： H01L31/02
CPC分类号： H01L27/14643 , H01L27/14689
摘要： More complete charge transfer is achieved in a CMOS or CCD imager by reducing the spacing in the gaps between gates in each pixel cell, and/or by providing a lightly doped region between adjacent gates in each pixel cell, and particularly at least between the charge collecting gate and the gate downstream to the charge collecting gate. To reduce the gaps between gates, an insulator cap with spacers on its sidewalls is formed for each gate over a conductive layer. The gates are then etched from the conductive layer using the insulator caps and spacers as hard masks, enabling the gates to be formed significantly closer together than previously possible, which, in turn increases charge transfer efficiency. By providing a lightly doped region on between adjacent gates, a more complete charge transfer is effected from the charge collecting gate.
摘要翻译：通过减小每个像素单元中的栅极之间的间隙和/或通过在每个像素单元中的相邻栅极之间提供轻掺杂区域，特别是至少在电荷之间，在CMOS或CCD成像器中实现更完整的电荷转移收集门和下游的门到电荷收集门。为了减小栅极之间的间隙，在导电层上为每个栅极形成在其侧壁上具有间隔物的绝缘体盖。然后使用绝缘体盖和间隔物作为硬掩模，从导电层蚀刻栅极，使得栅极能够形成得比先前可能的显着更靠近在一起，这又增加了电荷转移效率。通过在相邻栅极之间提供轻掺杂区域，从电荷收集栅极实现更完整的电荷转移。

116. 发明申请

US20110278436A1 IMAGE SENSOR WITH BACKSIDE PASSIVATION AND METAL LAYER 有权
标题翻译：具有背面钝化和金属层的图像传感器
公开(公告)号：US20110278436A1
公开(公告)日：2011-11-17
申请号：US13191042
申请日：2011-07-26
申请人： Howard E. Rhodes , Hidetoshi Nozaki
发明人： Howard E. Rhodes , Hidetoshi Nozaki
IPC分类号： H01L27/146 , B82Y20/00
CPC分类号： H01L27/14629 , H01L27/14609 , H01L27/14621 , H01L31/02327
摘要： An image sensor includes a semiconductor layer that filters light of different wavelengths. For example, the semiconductor layer absorbs photons of shorter wavelengths and passes more photons of longer wavelengths such that the longer wavelength photons often pass through without being absorbed. An imaging pixel having a photodiode is formed near a front side of the semiconductor layer. A dopant layer is formed below the photodiode near a back side of the semiconductor layer. A mirror that primarily reflects photons of longer visible wavelengths is disposed on the back side of the semiconductor layer.
摘要翻译：图像传感器包括对不同波长的光进行滤光的半导体层。例如，半导体层吸收较短波长的光子并且传递较长波长的更多光子，使得较长波长的光子经常通过而不被吸收。具有光电二极管的成像像素形成在半导体层的正面附近。在半导体层的背面附近的光电二极管附近形成掺杂剂层。主要反射更长可见波长的光子的反射镜设置在半导体层的背面。

117. 发明授权

US08018015B2 Buried conductor for imagers 有权
标题翻译：埋地导体成像仪
公开(公告)号：US08018015B2
公开(公告)日：2011-09-13
申请号：US11168760
申请日：2005-06-29
申请人： Howard E. Rhodes
发明人： Howard E. Rhodes
IPC分类号： H01L27/146 , H01L31/062 , H01L31/113 , H01L31/00
CPC分类号： H01L27/14683 , H01L27/14609 , H01L27/14636 , H01L27/14643
摘要： A pixel cell having a photo-conversion device at a surface of a substrate and at least one contact area from which charge or a signal is output or received. A first insulating layer is located over the photo-conversion device and the at least one contact area. The pixel cell further includes at least one conductor in contact with the at least one contact area. The conductor includes a polysilicon material extending through the first insulating layer and in contact with the at least one contact area. Further, a conductive material, which includes at least one of a silicide and a refractory metal, can be over and in contact with the polysilicon material.
摘要翻译：具有在基板的表面处的光转换装置的像素单元和输出或接收电荷或信号的至少一个接触区域。第一绝缘层位于光转换器件和至少一个接触区域之上。像素单元还包括与至少一个接触区域接触的至少一个导体。导体包括延伸穿过第一绝缘层并与至少一个接触区域接触的多晶硅材料。此外，包括硅化物和难熔金属中的至少一种的导电材料可以与多晶硅材料结合并接触。

118. 发明授权

US07968403B2 Method of fabricating a sleeve insulator for a contact structure 有权
标题翻译：制造用于接触结构的套筒绝缘体的方法
公开(公告)号：US07968403B2
公开(公告)日：2011-06-28
申请号：US11514640
申请日：2006-09-01
申请人： Philip J. Ireland , Howard E. Rhodes
发明人： Philip J. Ireland , Howard E. Rhodes
IPC分类号： H01L21/8242
CPC分类号： H01L27/10888 , H01L21/76897 , H01L27/10811 , H01L2924/0002 , H01L2924/00
摘要： A method and structure are disclosed that are advantageous for aligning a contact plug within a bit line contact corridor (BLCC) to an active area of a DRAM that utilizes an insulated sleeve structure. A sleeve insulator layer is deposited in an opening to protect one or more conductor layers from conductive contacts formed in the opening. The sleeve insulator layer electrically insulates a conductive plug from the conductor layer and self-aligns the BLCC so as to improve contact plug alignment tolerances between the BLCC and the capacitor or conductive components.
摘要翻译：公开了一种有利于将位线接触走廊（BLCC）内的接触插塞对准利用绝缘套管结构的DRAM的有源区域的方法和结构。套管绝缘体层沉积在开口中以保护一个或多个导体层与形成在开口中的导电触头。套管绝缘体层将导电插塞与导体层电绝缘，并使BLCC自对准，以提高BLCC与电容器或导电部件之间的接触插塞对准公差。

119. 发明授权

US07952096B2 CMOS image sensor with improved backside surface treatment 有权
标题翻译： CMOS图像传感器具有改进的背面处理
公开(公告)号：US07952096B2
公开(公告)日：2011-05-31
申请号：US12330226
申请日：2008-12-08
申请人： Howard E. Rhodes
发明人： Howard E. Rhodes
IPC分类号： H01L29/04
CPC分类号： H01L27/14601 , H01L27/14621 , H01L27/14627 , H01L27/14636 , H01L27/1464 , H01L27/14643 , H01L27/14689 , H01L27/14698
摘要： An apparatus and method for fabricating an array of backside illuminated (“BSI”) image sensors is disclosed. Front side components of the BSI image sensors are formed into a front side of the array. A dopant layer is implanted into a backside of the array. The dopant layer establishes a dopant gradient to encourage photo-generated charge carriers to migrate towards the front side of the array. At least a portion of the dopant layer is annealed. A surface treatment is formed on the backside of the dopant layer to cure surface defects.
摘要翻译：公开了一种用于制造背面照明（“BSI”）图像传感器阵列的装置和方法。 BSI图像传感器的前侧部件形成为阵列的前侧。将掺杂剂层注入阵列的背面。掺杂剂层建立掺杂剂梯度以促使光生电荷载流子朝向阵列的前侧迁移。掺杂剂层的至少一部分被退火。在掺杂剂层的背面形成表面处理以固化表面缺陷。

120. 发明授权

US07936955B2 Waveguide for thermo optic device 有权
标题翻译：波导用于光电装置
公开(公告)号：US07936955B2
公开(公告)日：2011-05-03
申请号：US12780601
申请日：2010-05-14
申请人： Guy T. Blalock , Howard E. Rhodes , Vishnu K. Agarwal , Gurtej Singh Sandhu , James S. Foresi , Jean-Francois Viens , Dale G. Fried
发明人： Guy T. Blalock , Howard E. Rhodes , Vishnu K. Agarwal , Gurtej Singh Sandhu , James S. Foresi , Jean-Francois Viens , Dale G. Fried
IPC分类号： G02B6/26
CPC分类号： G02F1/025 , G02B6/125 , G02B6/136 , G02B2006/12107 , G02B2006/12164 , G02F1/0147 , G02F2203/15
摘要： A waveguide and resonator are formed on a lower cladding of a thermo optic device, each having a formation height that is substantially equal. Thereafter, the formation height of the waveguide is attenuated. In this manner, the aspect ratio as between the waveguide and resonator in an area where the waveguide and resonator front or face one another decreases (in comparison to the prior art) thereby restoring the synchronicity between the waveguide and the grating and allowing higher bandwidth configurations to be used. The waveguide attenuation is achieved by photomasking and etching the waveguide after the resonator and waveguide are formed. In one embodiment the photomasking and etching is performed after deposition of the upper cladding. In another, it is performed before the deposition. Thermo optic devices, thermo optic packages and fiber optic systems having these waveguides are also taught.
摘要翻译：波导和谐振器形成在热光器件的下包层上，每个具有基本上相等的形成高度。此后，波导的形成高度被衰减。以这种方式，波导和谐振器在波导和谐振器前面或彼此面对的区域（与现有技术相比）中的波导和谐振器之间的纵横比，从而恢复波导和光栅之间的同步性并允许更高的带宽配置要使用的。在形成谐振器和波导之后，通过光掩模和蚀刻波导来实现波导衰减。在一个实施例中，在沉积上部包层之后进行光掩模和蚀刻。另一方面，它是在沉积之前进行的。还教导了具有这些波导的热光器件，热光封装和光纤系统。

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