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111. 发明授权

US08546901B2 High sensitivity image sensors including a single electron field effect transistor and methods of operating the same 有权
标题翻译：包括单电子场效应晶体管的高灵敏度图像传感器及其操作方法
公开(公告)号：US08546901B2
公开(公告)日：2013-10-01
申请号：US12662327
申请日：2010-04-12
申请人： Eric R. Fossum , Dae-Kil Cha , Young-Gu Jin , Yoon-Dong Park , Soo-Jung Hwang
发明人： Eric R. Fossum , Dae-Kil Cha , Young-Gu Jin , Yoon-Dong Park , Soo-Jung Hwang
IPC分类号： H01L31/101 , H01L31/062 , H01L31/113
CPC分类号： H01L31/112 , H01L27/14609 , H04N5/335 , H04N5/374
摘要： A high sensitivity image sensor including a pixel, the pixel including a single electron field effect transistor (SEFET), the SEFET including a first conductive type well in a second conductive type substrate, second conductive type source and drain regions in the well and a first conductive type gate region in the well between the source and the drain regions.
摘要翻译：包括像素的高灵敏度图像传感器，包括单电子场效应晶体管（SEFET）的像素，在第二导电型衬底中包括第一导电类型阱的SEFET，以及阱中的第二导电类型源极和漏极区域在源极和漏极区域之间的阱中的导电型栅极区域。

112. 发明授权

US08520104B2 Image sensor devices having dual-gated charge storage regions therein 有权
标题翻译：在其中具有双门控电荷存储区域的图像传感器装置
公开(公告)号：US08520104B2
公开(公告)日：2013-08-27
申请号：US12632989
申请日：2009-12-08
申请人： Eric R. Fossum , Young Gu Jin , Soo Jung Hwang , Dae Kil Cha , Yoon Dong Park , Jung Chak Ahn , Kyoung Sik Moon
发明人： Eric R. Fossum , Young Gu Jin , Soo Jung Hwang , Dae Kil Cha , Yoon Dong Park , Jung Chak Ahn , Kyoung Sik Moon
IPC分类号： H04N3/14 , H04N5/335 , H01L27/148 , G01C3/08
CPC分类号： H01L27/14812 , H01L27/14609 , H01L27/14641 , H01L27/14643 , H04N5/37452
摘要： An image sensor device may include a dual-gated charge storage region within a substrate. The dual-gated charge storage region includes first and second diodes within a common charge generating region. This charge generating region is configured to receive light incident on a surface of the image sensor device. The first and second diodes include respective first conductivity type regions responsive to first and second gate signals, respectively. These first and second gate signals are active during non-overlapping time intervals.
摘要翻译：图像传感器装置可以包括衬底内的双门控电荷存储区域。双门控电荷存储区域包括公共电荷产生区域内的第一和第二二极管。该电荷产生区被配置为接收入射在图像传感器装置的表面上的光。第一和第二二极管分别包括响应于第一和第二栅极信号的相应的第一导电类型区域。这些第一和第二门信号在非重叠时间间隔期间是有效的。

113. 发明授权

US08300088B2 Three dimensional image sensor 有权
标题翻译：三维图像传感器
公开(公告)号：US08300088B2
公开(公告)日：2012-10-30
申请号：US12585745
申请日：2009-09-23
申请人： Seung-hoon Lee , Eric R. Fossum , Yoon-dong Park , Kyoung-lae Cho , Sung-jae Byun
发明人： Seung-hoon Lee , Eric R. Fossum , Yoon-dong Park , Kyoung-lae Cho , Sung-jae Byun
IPC分类号： H04N13/02 , H04N13/00 , H04N3/14
CPC分类号： H04N5/3696 , H04N5/347 , H04N13/25
摘要： A three-dimensional (3D) image sensor includes a plurality of color pixels, and a plurality of distance measuring pixels. Where the plurality of color pixels and the plurality of distance measuring pixels are arranged in an array, and a group of distance measuring pixels, from among the plurality of distance measuring pixels, are disposed so that a corner of each distance measuring pixel in the group of distance-measuring pixels is adjacent to a corner of an adjacent distance-measuring pixel in the group of distance-measuring pixels. The group of distance measuring pixels is capable of jointly outputting one distance measurement signal.
摘要翻译：三维（3D）图像传感器包括多个彩色像素和多个距离测量像素。在多个彩色像素和多个距离测量像素排列成阵列的情况下，并且从多个距离测量像素之中设置一组距离测量像素，使得组中的每个距离测量像素的角部距离测量像素的距离测量像素组中的相邻距离测量像素的角部相邻。距离测量像素组能够共同输出一个距离测量信号。

114. 发明授权

US08283711B2 Non-volatile memory devices having data storage layer 有权
标题翻译：具有数据存储层的非易失性存储器件
公开(公告)号：US08283711B2
公开(公告)日：2012-10-09
申请号：US12149209
申请日：2008-04-29
申请人： Young-gu Jin , Yoon-dong Park , Won-joo Kim , Seung-hoon Lee , Suk-pil Kim
发明人： Young-gu Jin , Yoon-dong Park , Won-joo Kim , Seung-hoon Lee , Suk-pil Kim
IPC分类号： H01L29/792
CPC分类号： G11C5/02 , G11C5/025 , H01L27/2409 , H01L27/249 , H01L45/04 , H01L45/06 , H01L45/1226 , H01L45/143 , H01L45/144 , H01L45/146
摘要： Provided are a non-volatile memory device, which may have a stacked structure and may be easily integrated at increased density, and a method of fabricating and using the non-volatile memory device. The non-volatile memory device may include at least one pair of first electrode lines. At least one second electrode line may be between the at least one pair of first electrode lines. At least one data storage layer may be between the at least one pair of first electrode lines and the at least one second electrode line and may locally store a resistance change.
摘要翻译：提供了一种非易失性存储器件，其可以具有堆叠结构并且可以容易地以增加的密度集成，以及制造和使用非易失性存储器件的方法。非易失性存储器件可以包括至少一对第一电极线。至少一个第二电极线可以在所述至少一对第一电极线之间。至少一个数据存储层可以在至少一对第一电极线和至少一个第二电极线之间，并且可以局部地存储电阻变化。

115. 发明授权

US08279668B2 Apparatus and method of memory programming 有权
标题翻译：存储器编程的装置和方法
公开(公告)号：US08279668B2
公开(公告)日：2012-10-02
申请号：US12801532
申请日：2010-06-14
申请人： Kyoung Lae Cho , Yoon Dong Park , Jun Jin Kong , Jong Han Kim , Jae Hong Kim , Young Hwan Lee , Heeseok Eun , Seung-Hwan Song
发明人： Kyoung Lae Cho , Yoon Dong Park , Jun Jin Kong , Jong Han Kim , Jae Hong Kim , Young Hwan Lee , Heeseok Eun , Seung-Hwan Song
IPC分类号： G11C16/04
CPC分类号： G11C11/5628 , G11C29/00 , G11C2216/14
摘要： A memory programming apparatuses and/or methods are provided. The memory programming apparatus may include a data storage unit, a first counting unit, an index storage unit and/or a programming unit. The data storage unit may be configured to store a data page. The first counting unit may be configured to generate index information by counting a number of cells included in at least one reference threshold voltage state based on the data page. The index storage unit may be configured to store, the generated index information. The programming unit may be configured to store the data page in the data storage unit and store the generated index information in the index storage unit. The first counting unit may send the generated index information to the programming unit. The memory programming apparatus can monitor distribution states of threshold voltages in memory cells.
摘要翻译：提供了存储器编程设备和/或方法。存储器编程装置可以包括数据存储单元，第一计数单元，索引存储单元和/或编程单元。数据存储单元可以被配置为存储数据页。第一计数单元可以被配置为通过基于数据页计数包括在至少一个参考阈值电压状态中的单元的数量来生成索引信息。索引存储单元可以被配置为存储所生成的索引信息。编程单元可以被配置为将数据页存储在数据存储单元中，并将生成的索引信息存储在索引存储单元中。第一计数单元可以将生成的索引信息发送到编程单元。存储器编程装置可以监视存储器单元中阈值电压的分布状态。

116. 发明授权

US08247788B2 Nonvolatile memory device 有权
标题翻译：非易失性存储器件
公开(公告)号：US08247788B2
公开(公告)日：2012-08-21
申请号：US12659175
申请日：2010-02-26
申请人： Kwang-soo Seol , Yoon-dong Park , Deok-kee Kim , Sang-jun Choi
发明人： Kwang-soo Seol , Yoon-dong Park , Deok-kee Kim , Sang-jun Choi
IPC分类号： H01L45/00
CPC分类号： H01L27/2445 , H01L27/2436 , H01L27/249 , H01L45/04 , H01L45/06 , H01L45/1226 , H01L45/144 , H01L45/146 , H01L45/147
摘要： The nonvolatile memory device includes at least one pair of first electrode lines, at least one device structure disposed between the at least one pair of first electrode lines and a dielectric layer disposed between the at least one device structure and the at least one pair of first electrode lines. The at least one device structure includes a second electrode line including a first conductive type semiconductor, a resistance changing material layer adjacent to the second electrode line, a channel adjacent to the resistance changing material layer and including a second conductive type semiconductor different from the first conductive type semiconductor and a third electrode line adjacent to the channel and including the first conductive type semiconductor.
摘要翻译：非易失性存储器件包括至少一对第一电极线，设置在至少一对第一电极线之间的至少一个器件结构和设置在该至少一个器件结构与至少一对第一电极线之间的电介质层电极线。所述至少一个器件结构包括第二电极线，所述第二电极线包括第一导电类型半导体，与所述第二电极线相邻的电阻改变材料层，与所述电阻变化材料层相邻的通道，并且包括不同于所述第一导电类型的第一导电型半导体导电型半导体和与沟道相邻的第三电极线，并且包括第一导电型半导体。

117. 发明申请

US20120154537A1 IMAGE SENSORS AND METHODS OF OPERATING THE SAME 审中-公开
标题翻译：图像传感器及其操作方法
公开(公告)号：US20120154537A1
公开(公告)日：2012-06-21
申请号：US13239925
申请日：2011-09-22
申请人： Seung-Hyuk CHANG , Yoon-Dong PARK , Yong-Jel LEE
发明人： Seung-Hyuk CHANG , Yoon-Dong PARK , Yong-Jel LEE
IPC分类号： H04N13/02
CPC分类号： H04N5/351 , G01S7/4811 , G01S17/06 , H04N5/2256 , H04N13/254 , H04N13/271
摘要： According to example embodiments, a method of operating a three-dimensional image sensor comprises measuring a distance of an object from the three-dimensional image sensor using light emitted by a light source module, and adjusting an emission angle of the light emitted by the light source module based on the measured distance. The three-dimensional image sensor includes the light source module.
摘要翻译：根据示例性实施例，操作三维图像传感器的方法包括使用由光源模块发射的光来测量物体与三维图像传感器的距离，并且调整由光发射的光的发射角源模块基于测量距离。三维图像传感器包括光源模块。

118. 发明授权

US08148767B2 Semiconductor memory devices including recess-type control gate electrodes and methods of fabricating the semiconductor memory devices 失效
标题翻译：包括凹型控制栅电极的半导体存储器件和制造半导体存储器件的方法
公开(公告)号：US08148767B2
公开(公告)日：2012-04-03
申请号：US11709860
申请日：2007-02-23
申请人： Yoon-dong Park , June-mo Koo , Kyoung-lae Cho
发明人： Yoon-dong Park , June-mo Koo , Kyoung-lae Cho
IPC分类号： H01L29/788
CPC分类号： H01L21/28273 , B82Y10/00 , H01L21/28282 , H01L27/115 , H01L27/11521 , H01L27/11568 , H01L29/66825 , H01L29/66833 , H01L29/7881 , H01L29/792 , H01L29/7923
摘要： A semiconductor memory device includes a semiconductor substrate, a control gate electrode recessed in the semiconductor substrate, a storage node layer interposed between a sidewall of the control gate electrode and the semiconductor substrate, a tunneling insulation layer interposed between the storage node layer and the semiconductor substrate, a blocking insulation layer interposed between the storage node layer and the control gate electrode, and first and second channel regions formed around a surface of the semiconductor substrate to at least partially surround the control gate electrode. The semiconductor memory device may include a plurality of control gate electrodes, storage node layers, tunneling insulation layers, blocking insulation layers, and continuous first and second channel regions. A method of fabricating the semiconductor memory device includes etching the semiconductor substrate to form a plurality of holes, forming the tunneling insulation layers, storage node layers, blocking insulation layers, and control gate electrodes.
摘要翻译：半导体存储器件包括半导体衬底，凹入半导体衬底中的控制栅极电极，插在控制栅电极的侧壁和半导体衬底之间的存储节点层，介于存储节点层和半导体衬底之间的隧道绝缘层衬底，介于存储节点层和控制栅电极之间的阻挡绝缘层，以及形成在半导体衬底的表面周围以至少部分地围绕控制栅电极的第一和第二沟道区。半导体存储器件可以包括多个控制栅电极，存储节点层，隧道绝缘层，阻挡绝缘层以及连续的第一和第二沟道区。制造半导体存储器件的方法包括蚀刻半导体衬底以形成多个孔，形成隧道绝缘层，存储节点层，阻挡绝缘层和控制栅电极。

119. 发明申请

US20120038904A1 UNIT PIXEL, PHOTO-DETECTION DEVICE AND METHOD OF MEASURING A DISTANCE USING THE SAME 有权
标题翻译：单元像素，光电检测装置和使用其测量距离的方法
公开(公告)号：US20120038904A1
公开(公告)日：2012-02-16
申请号：US13187880
申请日：2011-07-21
申请人： Eric R. FOSSUM , Yoon-Dong Park
发明人： Eric R. FOSSUM , Yoon-Dong Park
IPC分类号： G01C3/08 , H01L27/148
CPC分类号： H01L27/14609 , H01L27/14603 , H01L27/14625
摘要： A unit pixel included in a photo-detection device, the unit pixel including a floating diffusion region in a semiconductor substrate, a ring-shaped collection gate over the semiconductor substrate, a ring-shaped drain gate over the semiconductor substrate, and a drain region in the semiconductor substrate, wherein the collection gate and the drain gate are respectively arranged between the floating diffusion region and the drain region.
摘要翻译：包括在光检测装置中的单位像素，单位像素包括半导体衬底中的浮动扩散区域，半导体衬底上的环形收集栅极，半导体衬底上的环形漏极栅极和漏极区域在半导体衬底中，其中集电栅极和漏极栅极分别布置在浮动扩散区域和漏极区域之间。

120. 发明授权

US08058701B2 Antifuse structures, antifuse array structures, methods of manufacturing the same 有权
标题翻译：防污结构，反熔丝阵列结构，制造方法
公开(公告)号：US08058701B2
公开(公告)日：2011-11-15
申请号：US12216094
申请日：2008-06-30
申请人： Deok-kee Kim , Yoon-dong Park , Seung-hoon Lee , I-hun Song , Won-joo Kim , Young-gu Jin , Hyuk-soon Choi , Suk-pil Kim
发明人： Deok-kee Kim , Yoon-dong Park , Seung-hoon Lee , I-hun Song , Won-joo Kim , Young-gu Jin , Hyuk-soon Choi , Suk-pil Kim
IPC分类号： H01L23/52
CPC分类号： H01L23/5252 , G11C17/16 , H01L27/1021 , H01L2924/0002 , H01L2924/00
摘要： Antifuse structures, antifuse arrays, methods of manufacturing, and methods of operating the same are provided. An antifuse structure includes bitlines formed as first diffusing regions within a semiconductor substrate, an insulation layer formed on the bitlines, and wordlines formed on the insulation layer. An antifuse array includes a plurality of antifuse structures arranged in an array.
摘要翻译：提供了防泡结构，反熔丝阵列，制造方法和操作方法。反熔丝结构包括在半导体衬底内形成为第一扩散区的位线，形成在位线上的绝缘层，以及形成在绝缘层上的字线。反熔丝阵列包括排列成阵列的多个反熔丝结构。

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