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111. 发明申请

US20170271161A1 ION IMPLANTATION METHOD AND ION IMPLANTATION APPARATUS 审中-公开
公开(公告)号：US20170271161A1
公开(公告)日：2017-09-21
申请号：US15457841
申请日：2017-03-13
申请人： SUMITOMO HEAVY INDUSTRIES ION TECHNOLOGY CO., LTD.
发明人： Yoji Kawasaki , Makoto Sano , Kazutaka Tsukahara
IPC分类号： H01L21/265 , H01L21/66
摘要： An ion implantation method includes: irradiating a wafer arranged to meet a predetermined plane channeling condition with an ion beam; measuring a predetermined characteristic on a surface of the wafer irradiated with the ion beam; and evaluating an implant angle distribution of the ion beam by using a result of measurement of the characteristic. The wafer may be arranged so as to include a channeling plane parallel to a predetermined reference plane parallel to a reference trajectory direction of the ion beam incident on the wafer and not to include a channeling plane perpendicular to the reference plane and parallel to the reference trajectory direction.

112. 发明申请

US20170170020A1 ION IMPLANTATION METHOD AND ION IMPLANTATION APPARATUS 审中-公开
公开(公告)号：US20170170020A1
公开(公告)日：2017-06-15
申请号：US15374181
申请日：2016-12-09
申请人： Sumitomo Heavy Industries Ion Technology Co., Ltd.
发明人： Yoji Kawasaki , Makoto Sano , Kazutaka Tsukahara
IPC分类号： H01L21/265 , H01J37/317 , H01L21/66
CPC分类号： H01L21/26586 , H01J37/3171 , H01L22/14 , H01L22/20
摘要： An ion implantation method for scanning an ion beam reciprocally in an x direction and moving a wafer reciprocally in a y direction to implant ions into the wafer is provided. The method includes: irradiating a first wafer arranged to meet a predetermined plane channeling condition with the ion beam and measuring resistance of the first wafer irradiated with the ion beam; irradiating a second wafer arranged to meet a predetermined axial channeling condition with the ion beam and measuring resistance of the second wafer irradiated with the ion beam; and adjusting an implant angle distribution of the ion beam by using results of measuring the resistance of the first and second wafers.

113. 发明授权

US09666413B2 Ion implantation apparatus and control method for ion implantation apparatus 有权
公开(公告)号：US09666413B2
公开(公告)日：2017-05-30
申请号：US14740928
申请日：2015-06-16
申请人： Sumitomo Heavy Industries Ion Technology Co., Ltd.
发明人： Yoshito Fujii , Tetsuya Kudo , Shinji Ebisu , Suguru Hirokawa , Keiji Okada
IPC分类号： H01J37/20 , H01J37/317
CPC分类号： H01J37/3171 , H01J37/185 , H01J37/20 , H01J2237/202 , H01J2237/31701
摘要： Provided is an ion implantation apparatus including: a vacuum processing chamber in which an ion implantation process for a wafer is performed; one or more load lock chambers that are used for bringing the wafer into the vacuum processing chamber and taking out the wafer from the vacuum processing chamber; an intermediate conveyance chamber that is disposed to be adjacent to both the vacuum processing chamber and the load lock chamber; a load lock chamber-intermediate conveyance chamber communication mechanism including a gate valve capable of sealing a load lock chamber-intermediate conveyance chamber communication port; and an intermediate conveyance chamber-vacuum processing chamber communication mechanism including a movable shielding plate capable of shielding a part or the whole of the intermediate conveyance chamber-vacuum processing chamber communication port.

114. 发明申请

US20170140898A1 ION GENERATOR AND METHOD OF CONTROLLING ION GENRATOR 审中-公开
公开(公告)号：US20170140898A1
公开(公告)日：2017-05-18
申请号：US15348761
申请日：2016-11-10
申请人： Sumitomo Heavy Industries Ion Technology Co., Ltd.
发明人： Hiroshi Kawaguchi
IPC分类号： H01J37/32 , B08B9/08
CPC分类号： H01J37/3244 , B08B9/08 , H01J37/08 , H01J37/3178 , H01J37/32357 , H01J37/32412 , H01J37/32422 , H01J37/32614 , H01J37/32862 , H01J2237/022 , H01J2237/0492 , H01J2237/055 , H01J2237/3365
摘要： An ion generator includes an ion source control unit that controls a gas supply unit and a plasma excitation source in accordance with a current ion source condition and a new ion source condition to be employed subsequent to the current ion source condition, a retention time obtaining unit that obtains retention time for the current ion source condition, and a pre-treatment condition setting unit that sets a pre-treatment condition defining a pre-treatment for forming a surface layer region suitable for the new ion source condition on a plasma chamber inner wall based on the current ion source condition, the retention time, and the new ion source condition. The ion source control unit is configured to control the gas supply unit and the plasma excitation source in accordance with the pre-treatment condition when the current ion source condition is changed to the new ion source condition.

115. 发明授权

US09502210B2 Ion implanter, ion implantation method, and beam measurement apparatus 有权
标题翻译：离子注入机，离子注入法和光束测量装置
公开(公告)号：US09502210B2
公开(公告)日：2016-11-22
申请号：US14821507
申请日：2015-08-07
申请人： Sumitomo Heavy Industries Ion Technology Co., Ltd.
发明人： Makoto Sano , Mitsukuni Tsukihara , Haruka Sasaki , Kouji Inada
IPC分类号： H01J37/00 , H01J37/244 , H01J37/317
CPC分类号： H01J37/244 , H01J37/3171 , H01J2237/057 , H01J2237/24405 , H01J2237/24535 , H01J2237/303
摘要： An ion implanter includes: a beam deflector that deflects an ion beam passing through a previous stage beam path and outputs the beam to pass through a subsequent stage beam path toward a wafer; a beam filter slit that partially shields the beam traveling through the subsequent stage beam path and allows passage of a beam component having a predetermined trajectory toward the wafer; a dose cup that is disposed between the beam deflector and the beam filter slit and measures a part of the beam exiting from the beam deflector as a beam current; and a trajectory limiting mechanism that is disposed between the beam deflector and the dose cup and prevents a beam component having a trajectory deviated from the predetermined trajectory from being incident to a measurement region of the dose cup.
摘要翻译：离子注入机包括：光束偏转器，其偏转通过先前级光束路径的离子束，并输出光束以通过后续级光束路径朝向晶片; 光束滤光器狭缝，其部分地屏蔽穿过后级光束路径的光束，并允许具有预定轨迹的光束分量通向晶片; 设置在光束偏转器和光束过滤器狭缝之间的剂量杯，并且测量从光束偏转器退出的光束的一部分作为光束电流; 以及轨道限制机构，其设置在所述光束偏转器和所述剂量杯之间，并且防止具有偏离所述预定轨迹的轨迹的光束分量入射到所述剂量杯的测量区域。

116. 发明授权

US09466467B2 Ion implantation apparatus 有权
标题翻译：离子注入装置
公开(公告)号：US09466467B2
公开(公告)日：2016-10-11
申请号：US14096735
申请日：2013-12-04
申请人： Sumitomo Heavy Industries Ion Technology Co., Ltd.
发明人： Mitsuaki Kabasawa , Kazuhiro Watanabe , Hitoshi Ando , Kouji Inada , Tatsuya Yamada
IPC分类号： H01J37/00 , H01J37/32 , H01J37/30 , H01J37/317
CPC分类号： H01J37/32412 , H01J37/3007 , H01J37/3171 , H01J2237/057 , H01J2237/10
摘要： An ion implantation apparatus includes: a plurality of units for accelerating an ion beam generated in an ion source; and a plurality of units for adjusting a scan beam and implanting ions into a wafer. A horizontal U-shaped folder type beamline having opposite long straight portions includes the plurality of units for adjusting the scan beam in a long straight portion to have substantially the same length as the ion source and the plurality of units for accelerating the ion beam.
摘要翻译：离子注入装置包括：用于加速在离子源中产生的离子束的多个单元; 以及用于调整扫描光束并将离子注入晶片的多个单元。具有相对的长直线部分的水平U形折叠型光束线包括多个单元，用于将长直线部分中的扫描光束调整为具有与离子源大致相同的长度和用于加速离子束的多个单元。

117. 发明授权

US09355847B2 High-energy ion implanter 有权
标题翻译：高能离子注入机
公开(公告)号：US09355847B2
公开(公告)日：2016-05-31
申请号：US14286083
申请日：2014-05-23
申请人： Sumitomo Heavy Industries Ion Technology Co., Ltd.
发明人： Mitsuaki Kabasawa , Kazuhiro Watanabe , Haruka Sasaki , Kouji Inada , Makoto Sano
IPC分类号： H01J37/317 , H01L21/265 , H01J37/05
CPC分类号： H01L21/26506 , H01J37/05 , H01J37/317 , H01J37/3171 , H01J2237/04737 , H01J2237/053 , H01J2237/057
摘要： A high-energy ion implanter includes: a beam generation unit that includes an ion source and a mass spectrometer; a radio frequency multi-stage linear acceleration unit; a deflection unit that includes a magnetic field type energy analysis device for filtering ions by a momentum; a beam transportation line unit; and a substrate processing/supplying unit. In this apparatus, an electric field type final energy filter that deflects a high-energy scan beam in the vertical direction by an electric field is inserted between the electric field type beam collimator and the wafer in addition to the magnetic field type mass spectrometer and the magnetic field type energy analysis device as momentum filters and the radio frequency multi-stage linear acceleration unit as a velocity filter.
摘要翻译：高能离子注入机包括：束生成单元，其包括离子源和质谱仪; 射频多级线性加速单元; 偏转单元，其包括用于通过动量对离子进行过滤的磁场型能量分析装置; 梁输送线单元; 和基板处理/供给单元。在该装置中，除了磁场型质谱仪之外，还在电场型光束准直仪和晶片之间插入通过电场使高能扫描光束在垂直方向上偏转的电场型最终能量过滤器，作为动力滤波器的磁场型能量分析装置和作为速度滤波器的射频多级线性加速装置。

118. 发明申请

US20160133439A1 HIGH ENERGY ION IMPLANTER, BEAM CURRENT ADJUSTER, AND BEAM CURRENT ADJUSTMENT METHOD 审中-公开
公开(公告)号：US20160133439A1
公开(公告)日：2016-05-12
申请号：US14996032
申请日：2016-01-14
申请人： Sumitomo Heavy Industries Ion Technology Co., Ltd.
发明人： Kouji Inada , Kouji Kato
IPC分类号： H01J37/304 , H01J37/04 , H01J37/317
CPC分类号： H01J37/304 , H01J37/04 , H01J37/3171 , H01J2237/0455 , H01J2237/08 , H01J2237/24535 , H01J2237/304 , H01J2237/30472 , H01J2237/31701
摘要： A beam current adjuster for an ion implanter includes a variable aperture device which is disposed at an ion beam focus point or a vicinity thereof. The variable aperture device is configured to adjust an ion beam width in a direction perpendicular to an ion beam focusing direction at the focus point in order to control an implanting beam current. The variable aperture device may be disposed immediately downstream of a mass analysis slit. The beam current adjuster may be provided with a high energy ion implanter including a high energy multistage linear acceleration unit.

119. 发明申请

US20160079032A1 ION IMPLANTER AND METHOD OF ION BEAM TUNING 有权
标题翻译：离子植入物和离子束调谐方法
公开(公告)号：US20160079032A1
公开(公告)日：2016-03-17
申请号：US14852037
申请日：2015-09-11
申请人： SUMITOMO HEAVY INDUSTRIES ION TECHNOLOGY CO., LTD.
发明人： Kazuhiro Watanabe , Yuuji Takahashi , Yusuke Ueno
IPC分类号： H01J37/304 , H01J37/244 , H01J37/317
CPC分类号： H01J37/304 , H01J37/05 , H01J37/244 , H01J37/3171 , H01J2237/055 , H01J2237/24514
摘要： An energy analysis slit of an ion implanter is configured to enable switching between a standard slit opening used for implantation processing performed under a predetermined implantation condition and a high-precision slit opening having higher energy precision than the standard slit opening and used to tune an acceleration parameter for a radio frequency linear accelerator. The acceleration parameter is determined for the predetermined implantation condition so that at least a part of ions supplied to the radio frequency linear accelerator is accelerated to have target energy, and so that the beam current amount measured by a beam measurement unit is equivalent to a target beam current amount.
摘要翻译：离子注入机的能量分析狭缝被配置为能够在用于在预定注入条件下执行的注入处理的标准狭缝开口与具有比标准狭缝开口更高能量精度的高精度狭缝开口之间进行切换，并用于调节加速度射频线性加速器的参数。对于预定的注入条件确定加速度参数，使得提供给射频线性加速器的离子的至少一部分被加速以具有目标能量，并且使得由光束测量单元测量的光束电流量等于目标光束电流量。

120. 发明申请

US20150357160A1 ION IMPLANTATION APPARATUS AND ION IMPLANTATION METHOD 有权
标题翻译：离子植入装置和离子植入方法
公开(公告)号：US20150357160A1
公开(公告)日：2015-12-10
申请号：US14732239
申请日：2015-06-05
申请人： Sumitomo Heavy Industries Ion Technology Co., Ltd.
发明人： Takanori Yagita , Mitsuaki Kabasawa
IPC分类号： H01J37/317 , H01J37/10 , H01J37/147
CPC分类号： H01J37/3171 , H01J37/147 , H01J37/1474
摘要： An ion implantation apparatus includes a beam scanning unit and a beam parallelizing unit arranged downstream thereof. The beam scanning unit has a scan origin in a central part of the scanning unit on a central axis of an incident ion beam. The beam parallelizing unit has a focal point of a parallelizing lens at the scan origin. The ion implantation apparatus is configured such that a focal position of the incident beam into the scanning unit is located upstream of the scan origin along the central axis of the incident beam. The focal position of the incident beam into the scanning unit is adjusted to be at a position upstream of the scan origin along the central axis of the incident beam such that a divergence phenomenon caused by the space charge effect in an exiting ion beam from the parallelizing unit is compensated.
摘要翻译：离子注入装置包括光束扫描单元和布置在其下游的光束并行化单元。光束扫描单元在入射离子束的中心轴上的扫描单元的中心部分具有扫描原点。光束平行化单元具有在扫描原点处的平行化透镜的焦点。离子注入装置被构造成使得入射到扫描单元中的入射光束的焦点位置沿着入射光束的中心轴线位于扫描原点的上游。将入射光束到扫描单元中的焦点位置被调整为沿着入射光束的中心轴的扫描原点的上游位置，使得由离开的离子束中的空间电荷效应引起的发散现象来自并联单位得到补偿。

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