会员体验
专利管家(专利管理)
工作空间(专利管理)
风险监控(情报监控)
数据分析(专利分析)
侵权分析(诉讼无效)
联系我们
交流群
官方交流:
QQ群: 891211   
微信请扫码    >>>
现在联系顾问~
热词
    • 113. 发明申请
    • DIELECTRIC ENHANCEMENTS TO CHIP-TO-CHIP CAPACITIVE PROXIMITY COMMUNICATION
    • 芯片到芯片电容式接近通信的电介质增强
    • US20100213606A1
    • 2010-08-26
    • US12391912
    • 2009-02-24
    • Ashok KrishnamoorthyJohn E. Cunningham
    • Ashok KrishnamoorthyJohn E. Cunningham
    • H01L23/29H01L21/02
    • H01L23/66H01L25/0657H01L2225/06527H01L2924/0002H01L2924/00
    • A method for improving signal levels between capacitively-coupled chips in proximity communication (PxC) includes depositing a high permittivity dielectric material layer over a signal pad of a first chip, and placing a second chip in close proximity to the first chip such that faces of the signal pads align to enable for capacitive signal coupling. The high permittivity dielectric material layer that fills at least a portion of a gap between the first chip and the second chip, and improves capacitive coupling between signal pads of the first chip and the second chip by providing for an increased permittivity in the gap between the first chip and the second chip. The increased permittivity ensures that electric fields are substantially confined to a space between the signal pad of the first chip and the signal pad of the second chip.
    • 一种用于改善接近通信(PxC)中的电容耦合芯片之间的信号电平的方法包括在第一芯片的信号焊盘上沉积高介电常数介电材料层,并将第二芯片放置在第一芯片附近, 信号焊盘对准以实现电容信号耦合。 高介电常数介电材料层,其填充第一芯片和第二芯片之间的间隙的至少一部分,并且通过在第一芯片和第二芯片之间的间隙中提供增加的介电常数来改善第一芯片和第二芯片的信号焊盘之间的电容耦合 第一芯片和第二芯片。 增加的介电常数确保电场基本上限制在第一芯片的信号焊盘和第二芯片的信号焊盘之间的空间。