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    • 115. 发明申请
    • Expansion screw set and hollow nail and interior nail thereof
    • 膨胀螺丝套和中空钉及内钉
    • US20080039846A1
    • 2008-02-14
    • US11723425
    • 2007-03-20
    • Shih-Tseng LeeJyi-Feng ChenChieh-Tsai WuHsun-Hui HsuNan-Chun Liu
    • Shih-Tseng LeeJyi-Feng ChenChieh-Tsai WuHsun-Hui HsuNan-Chun Liu
    • A61B17/56
    • A61B17/8685A61B17/686A61B17/864
    • The invention provides an expansion screw set, a hollow nail and an interior nail. The expansion screw set is composed of the hollow nail and the interior nail. The hollow nail has a hollow structure. A first thread and a second thread are provided for the inside and the outside of the hollow nail. The interior nail has a third thread. The hollow nail could nail an object through the first thread. The third thread of the interior nail corresponds to the second thread of the hollow nail. Therefore, the interior nail can be fastened into the hollow structure after the interior nail is nailed into the hollow nail. Moreover, the hollow nail has a separation line which runs parallel to the penetration direction of the hollow structure. Alternatively, the hollow nail has a plurality of penetration holes which is vertical to the penetration direction of the hollow structure. After the interior nail is nailed into the hollow structure, the separation line can be stretched out through the interior nail. Alternatively, contents within the hollow structure are squeezed to the outside from the penetration holes through the interior nail.
    • 本发明提供一种膨胀螺丝组,中空钉和内钉。 膨胀螺丝组由中空钉和内钉构成。 中空钉具有中空结构。 为中空钉的内部和外部提供第一螺纹和第二螺纹。 内钉有第三根线。 中空钉可以通过第一根螺纹钉住物体。 内钉的第三根线对应于中空钉的第二根线。 因此,内钉钉入中空钉后,可将内钉固定在中空结构中。 此外,中空钉具有与中空结构的穿透方向平行的分离线。 或者,中空钉具有与中空结构的穿透方向垂直的多个贯通孔。 内钉钉入中空结构后,分离线可以通过内钉伸出。 或者,中空结构内的内容物通过内钉从穿透孔挤压到外部。
    • 117. 发明申请
    • Micro secure digital memory card
    • 微安数字存储卡
    • US20070217166A1
    • 2007-09-20
    • US11378316
    • 2006-03-20
    • Chin-Chun Liu
    • Chin-Chun Liu
    • H05K1/14
    • G06K19/077G06K19/07732
    • The present invention provides an improved Micro SD memory card, wherein the Micro SD memory card comprises a memory unit, a frame and a cover. The memory card comprises a package of a complete integrated circuit and essential electrical devices, wherein one side of the memory unit further comprises a plurality of contact pieces, and a protruding portion is formed on a circumferential side of the memory unit. The frame has a locating area for positioning the memory unit, wherein a trench is formed on a circumferential edge of one side of the frame. A channel part is formed on another side of the frame and corresponds to the protruding portion of the memory unit. The cover locating onto one side of the frame, wherein an inserting portion is formed and is integrated into the trench of the frame. The frame's structure can be integrated either on the complete integrated package or the unpacking package.
    • 本发明提供了一种改进的Micro SD存储卡,其中Micro SD存储卡包括存储器单元,框架和盖。 存储卡包括完整集成电路和必需电气装置的封装,其中存储器单元的一侧还包括多个接触片,并且在存储器单元的周向侧上形成突出部分。 框架具有用于定位存储单元的定位区域,其中沟槽形成在框架的一侧的周向边缘上。 通道部分形成在框架的另一侧,对应于存储单元的突出部分。 所述盖位于所述框架的一侧,其中形成插入部分并且被集成到所述框架的沟槽中。 框架的结构可以集成在完整的集成包装或拆包包装中。
    • 119. 发明授权
    • Wire grid polarizer with double metal layers
    • 带双层金属层的线栅偏振器
    • US07158302B2
    • 2007-01-02
    • US10820421
    • 2004-04-08
    • Chih-Ho ChiuHui-Lung KuoYi-Chun LiuPing-Chen Chen
    • Chih-Ho ChiuHui-Lung KuoYi-Chun LiuPing-Chen Chen
    • G02B27/28
    • G02B5/3058
    • A wire grid polarizer with double metal layers for the visible spectrum. Parallel dielectric layers having a period (p) of 10˜250 nm and a trench between adjacent dielectric layers overlie a transparent substrate. A first metal layer having a first thickness (d1) of 30˜150 nm is disposed in the trench. A second metal layer having a second thickness (d2) of 30˜150 nm and a width (w) overlies on the top surface of each dielectric layer. The first and second metal layers are separated by a vertical distance (l) of 10˜100 nm. The first thickness (d1) is the same as the second thickness (d2). A ratio of the width (w) to the period (p) is 25˜75%.
    • 具有可见光谱双金属层的线栅偏振器。 具有10〜250nm的周期(p)的平行电介质层和相邻电介质层之间的沟槽覆盖在透明基板上。 具有30〜150nm的第一厚度(d 1)的第一金属层设置在沟槽中。 具有30〜150nm的第二厚度(d 2)和宽度(w)的第二金属层覆盖在每个介电层的顶表面上。 第一和第二金属层被隔开10〜100nm的垂直距离(l)。 第一厚度(d 1)与第二厚度(d 2)相同。 宽度(w)与周期(p)的比率为25〜75%。
    • 120. 发明授权
    • Non-uniformity pattern identification systems and methods thereof
    • 不均匀图案识别系统及其方法
    • US07127375B2
    • 2006-10-24
    • US10963093
    • 2004-10-12
    • Chia-Chun Liu
    • Chia-Chun Liu
    • G06F11/30G21C17/00
    • H01L22/12H01L22/20
    • A system for non-uniformity pattern identification. A storage device stores multiple theoretical patterns and measurements. Each measurement corresponds to a region on a wafer. The processing unit acquires the theoretical patterns and the measurements on at least two wafers, calculates pattern scores for the respective theoretical patterns of each wafer according to the measurements, and groups at least two of the theoretical patterns into at least one factor according to the pattern scores to identify one or more non-uniformity patterns for the wafers. Each pattern score represents the extent of similarity between one of the theoretical patterns and the measurements in one of the wafers.
    • 用于不均匀图案识别的系统。 存储设备存储多种理论模式和测量。 每个测量对应于晶片上的区域。 处理单元在至少两个晶片上获取理论模式和测量值,根据测量值计算每个晶片的理论模式的模式分数,并将至少两个理论模式分组成根据模式的至少一个因素 得分以识别晶片的一个或多个非均匀性图案。 每个图案得分代表在其中一个晶片中的理论图案之一和测量之间的相似程度。