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111. 发明申请

US20100117090A1 ARRAY SUBSTRATE INCLUDING THIN FILM TRANSISTOR AND METHOD OF FABRICATING THE SAME 有权
标题翻译：包括薄膜晶体管的阵列衬底及其制造方法
公开(公告)号：US20100117090A1
公开(公告)日：2010-05-13
申请号：US12486453
申请日：2009-06-17
申请人： Hyung-Gu Roh , Byung-Chul Ahn , Hee-Dong Choi , Seong-Moh Seo , Jun-Min Lee
发明人： Hyung-Gu Roh , Byung-Chul Ahn , Hee-Dong Choi , Seong-Moh Seo , Jun-Min Lee
IPC分类号： H01L33/00 , H01L21/336 , H01L21/268
CPC分类号： H01L27/1285 , H01L21/268 , H01L27/1288
摘要： A method of fabricating an array substrate includes: forming a gate line and a gate electrode connected to the gate line; forming a gate insulating layer on the gate line and the gate insulting layer; sequentially forming an intrinsic amorphous silicon pattern and an impurity-doped amorphous silicon pattern on the gate insulating layer over the gate electrode; forming a data line on the gate insulating layer and source and drain electrodes on the impurity-doped amorphous silicon pattern, the data line crossing the gate line to define a pixel region, and the source and drain electrodes spaced apart from each other; removing a portion of the impurity-doped amorphous silicon pattern exposed through the source and drain electrodes to define an ohmic contact layer; irradiating a first laser beam onto the intrinsic amorphous silicon pattern through the source and drain electrode to form an active layer including a first portion of polycrystalline silicon and a second portion of amorphous silicon at both sides of the first portion; forming a passivation layer on the data line, the source electrode and the drain electrode, the passivation layer having a drain contact hole exposing the drain electrode; and forming a pixel electrode on the passivation layer in the pixel region, the pixel electrode connected to the drain electrode through the drain contact hole.
摘要翻译：制造阵列基板的方法包括：形成栅极线和连接到栅极线的栅电极; 在栅极线和栅极绝缘层上形成栅极绝缘层; 在栅电极上的栅极绝缘层上依次形成本征非晶硅图案和杂质掺杂非晶硅图案; 在栅极绝缘层上形成数据线，在掺杂杂质的非晶硅图案上的源电极和漏极之间形成数据线，该数据线与栅极线交叉以限定一个像素区域，以及源极和漏极彼此间隔开; 去除通过源极和漏极暴露的杂质掺杂非晶硅图案的一部分，以限定欧姆接触层; 通过源极和漏极将第一激光束照射到本征非晶硅图案上，以在第一部分的两侧形成包括多晶硅的第一部分和非晶硅的第二部分的有源层; 在数据线上形成钝化层，源电极和漏电极，钝化层具有暴露漏电极的漏极接触孔; 以及在所述像素区域中的钝化层上形成像素电极，所述像素电极通过所述漏极接触孔与所述漏电极连接。

112. 发明申请

US20100015740A1 Liquid crystal display device and fabricating method thereof 有权
标题翻译：液晶显示装置及其制造方法
公开(公告)号：US20100015740A1
公开(公告)日：2010-01-21
申请号：US12585845
申请日：2009-09-25
申请人： Byung Chul Ahn , Byoung Ho Lim , Jae Jun Ahn
发明人： Byung Chul Ahn , Byoung Ho Lim , Jae Jun Ahn
IPC分类号： H01L21/28
CPC分类号： G02F1/1368 , G02F1/13458 , G02F2001/136236
摘要： A liquid crystal display device, including: first and second substrates; a gate line on the first substrate; a data line crossing the gate line having a gate insulating film therebetween to define a pixel area; a pixel electrode formed of a transparent conductive film in a pixel hole passing through the gate insulating film in the pixel area; and a thin film transistor including a gate electrode, a source electrode, a drain electrode, and a semiconductor layer defining a channel between the source electrode and the drain electrode, wherein the semiconductor layer overlaps with a source and drain metal pattern including the data line, the source electrode and the drain electrode; and wherein the drain electrode protrudes from the semiconductor layer toward inside of the pixel electrode to be connected to the pixel electrode.
摘要翻译：一种液晶显示装置，包括：第一和第二基板; 第一基板上的栅极线; 与栅极线交叉的数据线，其间具有栅极绝缘膜，以限定像素区域; 在通过像素区域中的栅极绝缘膜的像素孔中由透明导电膜形成的像素电极; 以及薄膜晶体管，其包括栅电极，源电极，漏电极和限定在所述源电极和所述漏电极之间的沟道的半导体层，其中所述半导体层与包括所述数据线的源极和漏极金属图案重叠源电极和漏电极; 并且其中所述漏电极从所述半导体层突出到所述像素电极的内部以连接到所述像素电极。

113. 发明授权

US07583337B2 Liquid crystal display device and method of fabricating same 有权
标题翻译：液晶显示装置及其制造方法
公开(公告)号：US07583337B2
公开(公告)日：2009-09-01
申请号：US11142315
申请日：2005-06-02
申请人： Byung Chul Ahn , Tae Yong Jung , Ji No Lee , Hee Young Kwack
发明人： Byung Chul Ahn , Tae Yong Jung , Ji No Lee , Hee Young Kwack
IPC分类号： G02F1/1335
CPC分类号： G02F1/133555 , G02F1/1362 , G02F2001/136231
摘要： A liquid crystal display device is provided that comprises a gate line; a first insulating film on the gate line; a data line crossing the gate line to define a pixel region, the pixel region having a transmissive area and a reflective area; a thin film transistor connected to the gate line and the data line; a pixel electrode formed in the pixel region; a second insulating film on the thin film transistor; a storage capacitor including a storage upper electrode overlapping the gate line; a transmission hole exposing at least a portion of the pixel electrode, and a reflective electrode formed in the reflective area of the pixel region, the reflective electrode connecting the pixel electrode with thin film transistor and the storage upper electrode, wherein the gate line and the pixel electrode include a first transparent conductive layer.
摘要翻译：提供一种液晶显示装置，其包括栅极线; 栅极线上的第一绝缘膜; 穿过所述栅极线以限定像素区域的数据线，所述像素区域具有透射区域和反射区域; 连接到栅极线和数据线的薄膜晶体管; 形成在所述像素区域中的像素电极; 薄膜晶体管上的第二绝缘膜; 存储电容器，包括与栅极线重叠的存储上电极; 曝光所述像素电极的至少一部分的透射孔，以及形成在所述像素区域的反射区域中的反射电极，所述反射电极将所述像素电极与薄膜晶体管连接，并且所述存储上电极，像素电极包括第一透明导电层。

114. 发明授权

US07564529B2 Liquid crystal display device and fabricating method thereof 有权
标题翻译：液晶显示装置及其制造方法
公开(公告)号：US07564529B2
公开(公告)日：2009-07-21
申请号：US11312714
申请日：2005-12-21
申请人： Byung Chul Ahn
发明人： Byung Chul Ahn
IPC分类号： G02F1/1343
CPC分类号： G02F1/13458 , G02F1/134363 , G02F1/136209 , G02F1/136213 , G02F1/136286 , G02F2001/134372 , G02F2001/136231 , G02F2001/136236 , G02F2001/13629 , G02F2001/136295
摘要： A thin film transistor substrate of fringe field switching type and a fabricating method thereof for simplifying a process are disclosed. In the thin film transistor substrate of fringe field switching type, a gate line has a multiple-layer structure and includes a transparent conductive layer. A data line crosses the gate line to define a pixel area. A thin film transistor is connected to the gate line and the data line. A common line is provided in a multiple-layer structure and in parallel to the gate line. A common electrode is formed by an extension of a transparent conductive layer of the common line at said pixel area. A pixel electrode is connected to the thin film transistor to form a fringe field with the common electrode in the pixel area.
摘要翻译：公开了一种用于简化工艺的条纹场切换型薄膜晶体管基板及其制造方法。在边缘场开关型的薄膜晶体管基板中，栅极线具有多层结构并且包括透明导电层。数据线穿过栅极线以定义像素区域。薄膜晶体管连接到栅极线和数据线。在多层结构中并行地设置公共线。公共电极通过在所述像素区域处的公共线的透明导电层的延伸形成。像素电极连接到薄膜晶体管，以在像素区域中与公共电极形成边缘场。

115. 发明授权

US07556988B2 Thin film transistor substrate of horizontal electric field type liquid crystal display device and fabricating method thereof 有权
标题翻译：水平电场型液晶显示装置薄膜晶体管基板及其制造方法
公开(公告)号：US07556988B2
公开(公告)日：2009-07-07
申请号：US11345370
申请日：2006-02-02
申请人： Byung Chul Ahn , Oh Nam Kwon , Heung Lyul Cho
发明人： Byung Chul Ahn , Oh Nam Kwon , Heung Lyul Cho
IPC分类号： H01L21/82
CPC分类号： H01L27/124 , G02F1/134363 , G02F1/136213 , G02F1/1368 , G02F2001/136295 , H01L27/1288
摘要： A thin film transistor substrate of horizontal electric field type includes: a gate line and a first common line formed on a substrate to be in parallel to each other; a data line crossing the gate line and the first common line with a gate insulating film therebetween to define a pixel area; a second common line crossing the first common line having the gate insulating film therebetween; a thin film transistor connected to the gate line and the data line; a common electrode extending from the second common line in said pixel area; a pixel electrode that is parallel to the common electrode and the second common line; a protective film for covering the thin film transistor; a gate pad having a lower gate pad electrode connected to an upper gate pad electrode through a first contact hole; a common pad having a lower common pad electrode connected to an upper common pad electrode through a second contact hole; and a data pad having a lower data pad electrode connected to an upper data pad electrode provided within a third contact hole.
摘要翻译：水平电场型薄膜晶体管基板包括：形成在彼此平行的基板上的栅极线和第一公共线; 跨越所述栅极线和所述第一公共线的数据线，其间具有栅极绝缘膜，以限定像素区域; 第二公共线与其间具有栅绝缘膜的第一公共线交叉; 连接到栅极线和数据线的薄膜晶体管; 在所述像素区域中从所述第二公共线延伸的公共电极; 平行于公共电极和第二公共线的像素电极; 用于覆盖薄膜晶体管的保护膜; 栅极焊盘，其具有通过第一接触孔连接到上部栅极焊盘电极的下部栅极焊盘电极; 公共焊盘，其具有通过第二接触孔连接到上公共焊盘电极的下公共焊盘电极; 以及数据焊盘，其具有连接到设置在第三接触孔内的上数据焊盘电极的下数据焊盘电极。

116. 发明授权

US07528921B2 Liquid crystal display panel and method of fabricating the same 有权
标题翻译：液晶显示面板及其制造方法
公开(公告)号：US07528921B2
公开(公告)日：2009-05-05
申请号：US11168555
申请日：2005-06-29
申请人： Byung Chul Ahn , Joo Soo Lim
发明人： Byung Chul Ahn , Joo Soo Lim
IPC分类号： G02F1/1339
CPC分类号： G02F1/13394 , G02F1/1343 , G02F1/1368
摘要： This invention relates to a liquid crystal display panel, including: a first substrate having a common electrode; a second substrate including a pixel electrode that forms an electric field with the common electrode, a thin film transistor connected to the pixel electrode, a signal line that applies a signal to the thin film transistor, and a contact area in an area outside an area where the signal line is, and the contact area applies a common voltage to the common electrode; and a sealant formed between the first and second substrates with a conductive spacer that connects the contact area with the common electrode.
摘要翻译：本发明涉及一种液晶显示面板，包括：具有公共电极的第一基板; 第二基板，包括与公共电极形成电场的像素电极，连接到像素电极的薄膜晶体管，向薄膜晶体管施加信号的信号线，以及在区域外的区域中的接触区域其中信号线是，并且接触区域向公共电极施加公共电压; 以及在所述第一和第二基板之间形成的密封剂，其具有将所述接触区域与所述公共电极连接的导电间隔件。

117. 发明申请

US20090085040A1 Liquid crystal display device and fabricating method thereof 有权
标题翻译：液晶显示装置及其制造方法
公开(公告)号：US20090085040A1
公开(公告)日：2009-04-02
申请号：US12292950
申请日：2008-12-01
申请人： Byung Chul Ahn
发明人： Byung Chul Ahn
IPC分类号： H01L21/28 , H01L33/00
CPC分类号： H01L27/124 , G02F1/136213 , G02F1/136286 , G02F2001/136236 , G02F2001/13629 , H01L27/1255 , H01L27/1288
摘要： A thin film transistor substrate and a fabricating method simplify a process and enlarge a capacitance value of a storage capacitor without any reduction of aperture ratio. A transparent first conductive layer and an opaque second conductive layer of a double-layer structured gate line are formed having a step coverage. A pixel electrode is provided on the gate insulating film within a pixel hole of said pixel area passing through the passivation film to be connected to the thin film transistor. A storage capacitor overlaps with the pixel electrode with having the gate insulating film therebetween and has a lower storage electrode protruded from the first conductive layer.
摘要翻译：薄膜晶体管基板和制造方法简化了工艺，并且扩大了存储电容器的电容值，而没有孔径比的任何减小。形成双层结构化栅极线的透明第一导电层和不透明第二导电层，具有台阶覆盖。在通过钝化膜的所述像素区域的像素孔内的栅极绝缘膜上设置像素电极以连接到薄膜晶体管。存储电容器与像素电极重叠，其间具有栅极绝缘膜，并且具有从第一导电层突出的下部存储电极。

118. 发明授权

US07488632B2 Thin film transistor substrate for display device and fabricating method thereof 有权
标题翻译：用于显示装置的薄膜晶体管基板及其制造方法
公开(公告)号：US07488632B2
公开(公告)日：2009-02-10
申请号：US11713046
申请日：2007-03-02
申请人： Byung Chul Ahn , Soon Sung Yoo , Heung Lyul Cho
发明人： Byung Chul Ahn , Soon Sung Yoo , Heung Lyul Cho
IPC分类号： H01L29/15 , G02F1/1365
CPC分类号： G02F1/136227 , G02F1/136213 , H01L27/124 , H01L27/1255 , H01L27/1288
摘要： A thin film transistor (TFT) substrate is fabricated in three mask processes. In a first mask process, a gate line and a gate electrode are formed. In a second mask process, a data line, a source electrode, a drain electrode, a semiconductor layer, and a first upper storage electrode overlapping the gate line are formed from a gate insulating film, undoped and doped amorphous silicon layers, and a data metal layer. In a third mask process, a pixel hole is formed through protective and gate insulating films within and outside a pixel area, the first upper storage electrode is partially removed, a pixel electrode contacts a side of the drain electrode within the pixel hole at the pixel area, and a second upper storage electrode contacts a side of the first upper storage electrode in the pixel hole outside the pixel area.
摘要翻译：在三个掩模工艺中制造薄膜晶体管（TFT）衬底。在第一掩模工艺中，形成栅极线和栅电极。在第二掩模处理中，从栅极绝缘膜，未掺杂和掺杂的非晶硅层形成数据线，源电极，漏极，半导体层和与栅极线重叠的第一上部存储电极，以及数据金属层。在第三掩模处理中，通过像素区域内和外部的保护栅极绝缘膜形成像素孔，部分地去除第一上部存储电极，像素电极在像素的像素孔内接触漏电极的一侧并且第二上部存储电极接触像素区域外的像素孔中的第一上部存储电极的一侧。

119. 发明授权

US07471357B2 Liquid crystal display device and method for fabricating the same 有权
标题翻译：液晶显示装置及其制造方法
公开(公告)号：US07471357B2
公开(公告)日：2008-12-30
申请号：US11315151
申请日：2005-12-23
申请人： Byung Chul Ahn , Joo Soo Lim
发明人： Byung Chul Ahn , Joo Soo Lim
IPC分类号： G02F1/1335 , G02F1/13
CPC分类号： G02F1/133555 , G02F1/133345 , G02F1/136213 , G02F1/136286 , G02F1/1368 , G02F2201/123 , G02F2202/02
摘要： This invention relates to a transflective thin film transistor substrate and a fabricating method thereof that is adaptive for simplifying process, and a liquid crystal display device using the same and a fabricating method thereof.A liquid crystal display device according to an embodiment of the present invention includes a gate line and a data line crossing each other with a gate insulating film to define a pixel area on a first substrate; a thin film transistor connected to the gate line and the data line; a pixel electrode in the pixel area connected to the thin film transistor and to be exposed through a transmission area; a reflection electrode formed in a reflection area having separated areas with the transmission area in between; and an organic insulating film formed under the reflection electrode and formed in a first horizontal area including the reflection area.
摘要翻译：本发明涉及一种适于简化工艺的透反射薄膜晶体管基板及其制造方法，以及使用该半透半导体薄膜晶体管的液晶显示装置及其制造方法。根据本发明实施例的液晶显示装置包括栅极线和数据线，栅极绝缘膜彼此交叉以在第一基板上限定像素区域; 连接到栅极线和数据线的薄膜晶体管; 像素电极，连接到薄膜晶体管并通过透射区域曝光; 反射电极，形成在具有分离区域的反射区域中，所述反射区域之间具有透射面积; 以及形成在反射电极下方并形成在包括反射区域的第一水平区域中的有机绝缘膜。

120. 发明授权

US07381988B2 Array substrate for liquid crystal display device and the fabrication method of the same 有权
标题翻译：液晶显示装置用阵列基板及其制造方法
公开(公告)号：US07381988B2
公开(公告)日：2008-06-03
申请号：US11806979
申请日：2007-06-05
申请人： Byung-chul Ahn , Byoung-ho Lim , Soon-Sung Yoo , Yong-wan Kim
发明人： Byung-chul Ahn , Byoung-ho Lim , Soon-Sung Yoo , Yong-wan Kim
IPC分类号： H01L29/04 , H01L29/10 , H01L31/20 , H01L31/036 , H01L31/0376
CPC分类号： H01L27/1288 , H01L27/124 , H01L27/1255
摘要： The present invention discloses a four-mask method of manufacturing an array substrate of a liquid crystal display device and the liquid crystal display device having the same array substrate. The method includes forming a plurality of gate lines, gate electrodes and gate extension lines by depositing a first metallic material on a substrate and patterning the first metallic material with a first mask, the gate extension lines extending toward the opposite direction of the gate electrodes; forming a first insulating layer on the whole surface having gate lines, gate electrodes, and gate extension lines; forming a plurality of data lines, source electrodes, drain electrodes, and capacitor electrodes over the gate lines by depositing a semiconductor layer, an ohmic contact layer and a second metallic material sequentially on the first insulating layer, and patterning the second metallic material and the ohmic contact layer with a second mask; forming a passivation layer and a plurality of first and second contact holes by depositing a second insulating layer on the data lines, the source electrodes, the drain electrodes and the capacitor electrodes, and patterning the second insulating layer with a third mask, the first contact holes exposing a portion of the drain electrode, the second contact holes exposing a portion of the capacitor electrodes; and forming a plurality of pixel electrodes by depositing a transparent conductive layer on the passivation layer, and patterning the transparent conductive layer by a fourth mask, the pixel electrodes contacting the drain electrodes through the first contact holes and contacting the capacitor electrodes through the second contact holes.
摘要翻译：本发明公开了一种制造液晶显示装置的阵列基板的四掩模方法和具有相同阵列基板的液晶显示装置。该方法包括通过在衬底上沉积第一金属材料并用第一掩模图案化第一金属材料来形成多条栅极线，栅电极和栅极延伸线，栅极延伸线朝向栅电极的相反方向延伸; 在具有栅极线，栅极电极和栅极延伸线的整个表面上形成第一绝缘层; 通过在第一绝缘层上依次沉积半导体层，欧姆接触层和第二金属材料，在栅极线上形成多个数据线，源电极，漏电极和电容器电极，并将第二金属材料和具有第二掩模的欧姆接触层; 通过在数据线，源电极，漏电极和电容器电极上沉积第二绝缘层，并用第三掩模对第二绝缘层进行构图来形成钝化层和多个第一和第二接触孔，第一接触露出一部分漏电极的第二接触孔暴露电容器电极的一部分; 以及通过在所述钝化层上沉积透明导电层并形成多个像素电极，以及通过第四掩模对所述透明导电层进行图案化，所述像素电极通过所述第一接触孔与所述漏电极接触并通过所述第二接触接触所述电容器电极孔。

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