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111. 发明授权

US08693857B2 Irradiance pulse heat-treating methods and apparatus 有权
标题翻译：辐射脉冲热处理方法和装置
公开(公告)号：US08693857B2
公开(公告)日：2014-04-08
申请号：US13182341
申请日：2011-07-13
申请人： David Malcolm Camm , Steve McCoy , Greg Stuart
发明人： David Malcolm Camm , Steve McCoy , Greg Stuart
IPC分类号： F26B19/00
CPC分类号： H01L21/324 , C21D1/34 , C21D11/00 , H01L21/26513 , H01L21/268 , H01L21/2686 , H01L21/67115
摘要： A method of heat-treating a workpiece includes generating an initial heating portion and a subsequent sustaining portion of an irradiance pulse incident on a target surface area of the workpiece. A combined duration of the initial heating portion and the subsequent sustaining portion is less than a thermal conduction time of the workpiece. The initial heating portion heats the target surface area to a desired temperature and the subsequent sustaining portion maintains the target surface area within a desired range from the desired temperature. Another method includes generating such an initial heating portion and subsequent sustaining portion of an irradiance pulse, monitoring at least one parameter indicative of a presently completed amount of a desired thermal process during the irradiance pulse, and modifying the irradiance pulse in response to deviation of the at least one parameter from an expected value.
摘要翻译：对工件进行热处理的方法包括产生入射到工件的目标表面区域上的辐照脉冲的初始加热部分和随后的维持部分。初始加热部分和随后的维持部分的组合持续时间小于工件的热传导时间。初始加热部分将目标表面积加热至所需温度，随后的维持部分将目标表面积保持在所需温度的期望范围内。另一种方法包括生成辐照度脉冲的这种初始加热部分和随后的维持部分，在辐照脉冲期间监测指示目前完成的期望热处理量的至少一个参数，以及响应于辐射脉冲的偏差来修改辐照度脉冲来自预期值的至少一个参数。

112. 发明申请

US20120231558A1 METHOD AND SYSTEM FOR DETERMINING OPTICAL PROPERTIES OF SEMICONDUCTOR WAFERS 有权
标题翻译：用于确定半导体波导的光学性质的方法和系统
公开(公告)号：US20120231558A1
公开(公告)日：2012-09-13
申请号：US13415963
申请日：2012-03-09
申请人： Paul Janis Timans
发明人： Paul Janis Timans
IPC分类号： H01L21/66
CPC分类号： H01L21/67115 , G01J5/0003 , G01N21/55 , H01L21/67248 , H01L22/24
摘要： A method and system are disclosed for determining at least one optical characteristic of a substrate, such as a semiconductor wafer. Once the optical characteristic is determined, at least one parameter in a processing chamber may be controlled for improving the process. For example, in one embodiment, the reflectivity of one surface of the substrate may first be determined at or near ambient temperature. From this information, the reflectance and/or emittance of the wafer during high temperature processing may be accurately estimated. The emittance can be used to correct temperature measurements using a pyrometer during wafer processing. In addition to making more accurate temperature measurements, the optical characteristics of the substrate can also be used to better optimize the heating cycle.
摘要翻译：公开了一种用于确定诸如半导体晶片的衬底的至少一种光学特性的方法和系统。一旦确定了光学特性，则可以控制处理室中的至少一个参数以改善处理。例如，在一个实施例中，可以首先在环境温度或接近环境温度下确定衬底的一个表面的反射率。根据该信息，可以准确地估计在高温处理期间晶片的反射率和/或发射率。在晶片处理过程中，发射率可用于使用高温计校正温度测量。除了进行更准确的温度测量之外，基板的光学特性也可用于更好地优化加热循环。

113. 发明授权

US08236706B2 Method and apparatus for growing thin oxide films on silicon while minimizing impact on existing structures 有权
标题翻译：用于在硅上生长薄氧化膜同时最小化对现有结构的影响的方法和装置
公开(公告)号：US08236706B2
公开(公告)日：2012-08-07
申请号：US12334425
申请日：2008-12-12
申请人： Bruce W. Peuse , Yaozhi Hu , Paul Janis Timans , Guangcai Xing , Wilfried Lerch , Sing-Pin Tay , Stephen E. Savas , Georg Roters , Zsolt Nenyei , Ashok Sinha
发明人： Bruce W. Peuse , Yaozhi Hu , Paul Janis Timans , Guangcai Xing , Wilfried Lerch , Sing-Pin Tay , Stephen E. Savas , Georg Roters , Zsolt Nenyei , Ashok Sinha
IPC分类号： H01L21/31 , H01L21/469
CPC分类号： H01L21/31654 , H01L21/0223 , H01L21/02238 , H01L21/02323 , H01L21/0234 , H01L21/67115 , H01L21/67248 , H01L21/68771
摘要： Plasma assisted low temperature radical oxidation is described. The oxidation is selective to metals or metal oxides that may be present in addition to the silicon being oxidized. Selectivity is achieved by proper selection of process parameters, mainly the ratio of H2 to O2 gas. The process window may be enlarged by injecting H2O steam into the plasma, thereby enabling oxidation of silicon in the presence of TiN and W, at relatively low temperatures. Selective oxidation is improved by the use of an apparatus having remote plasma and flowing radicals onto the substrate, but blocking ions from reaching the substrate.
摘要翻译：描述了等离子体辅助低温自由基氧化。除了被氧化的硅之外，氧化对于可能存在的金属或金属氧化物是选择性的。选择性通过适当选择工艺参数来实现，主要是H2与O2气的比例。可以通过将H 2 O蒸汽注入到等离子体中来扩大工艺窗口，从而可以在相对低的温度下在TiN和W的存在下氧化硅。通过使用具有远离等离子体和流动基团的装置到衬底上但阻止离子到达衬底的装置来改善选择性氧化。

114. 发明授权

US08066815B2 Multi-workpiece processing chamber 有权
标题翻译：多工件处理室
公开(公告)号：US08066815B2
公开(公告)日：2011-11-29
申请号：US11839527
申请日：2007-08-15
申请人： Daniel J. Devine , Rene George , Ce Qin , Dixit Desai
发明人： Daniel J. Devine , Rene George , Ce Qin , Dixit Desai
IPC分类号： C23C16/00 , C23F1/00 , H01L21/306
CPC分类号： H01L21/6719
摘要： A multi-workpiece chamber includes at least two processing stations, for exposing workpieces to a treatment process. A partition cooperates with the chamber such that the partition is disengagably removable from the chamber and re-engagable with the chamber for selectively dividing the processing stations. The partition is configured to provide for non-line-of-sight travel of certain ones of the process related products between the processing stations. An exhaust arrangement divides exhaust flow into at least two approximately equal exhaust flow portions that leave the multi-workpiece chamber in a way which enhances uniformity of the treatment process for the stations. A partition configuration is described including a partition portion between the stations and a baffle portion extending into an exhaust arrangement. A modified partition arrangement is provided for use in establishing a modified exchange characteristic of the process related products.
摘要翻译：多工件室包括至少两个处理站，用于将工件暴露于处理过程。分隔件与腔室配合使得分隔件可离开地从腔室移除并与腔室重新接合以选择性地分割处理站。分区被配置为提供处理站之间的某些处理相关产品的非视距行进。排气装置将废气流分成至少两个大致相等的排气流部分，这些排气流部分以提高站的处理过程的均匀性的方式离开多工件室。描述了分隔构造，其包括站之间的分隔部分和延伸到排气装置中的挡板部分。提供了一种改进的分区布置，用于建立过程相关产品的修改的交换特征。

115. 发明申请

US20110216803A1 SYSTEM AND PROCESS FOR CALIBRATING PYROMETERS IN THERMAL PROCESSING CHAMBERS 有权
标题翻译：用于在热处理室中校准紫外线的系统和方法
公开(公告)号：US20110216803A1
公开(公告)日：2011-09-08
申请号：US13109577
申请日：2011-05-17
申请人： Paul Janis Timans
发明人： Paul Janis Timans
IPC分类号： G01J5/02 , G01K15/00
CPC分类号： G01J5/0896 , G01J5/0003 , G01J5/0007 , G01J5/0285 , G01J5/06 , G01J5/08 , G01J5/0803 , G01J5/0821 , G01J5/0831 , G01J5/0846 , G01J5/089 , G01J5/522 , G01J5/58 , G01J2005/0048 , G01J2005/065 , H01L21/324 , H01L21/67115 , H01L21/67248
摘要： A method and system for calibrating temperature measurement devices, such as pyrometers, in thermal processing chambers are disclosed. According to the present invention, the system includes a calibrating light source that emits light energy onto a substrate contained in the thermal processing chamber. A light detector then detects the amount of light that is being transmitted through the substrate. The amount of detected light energy is then used to calibrate a temperature measurement device that is used in the system.
摘要翻译：公开了一种在热处理室中校准温度测量装置，例如高温计的方法和系统。根据本发明，该系统包括将光能发射到包含在热处理室中的基板上的校准光源。然后光检测器检测正在透过基板的光量。然后使用检测到的光能量来校准在系统中使用的温度测量装置。

116. 发明授权

US08000587B2 Pulsed processing semiconductor heating methods and associated system using combinations of heating sources 有权
标题翻译：脉冲处理半导体加热方法及相关系统采用加热源组合
公开(公告)号：US08000587B2
公开(公告)日：2011-08-16
申请号：US11943452
申请日：2007-11-20
申请人： Paul J. Timans , Narasimha Acharya
发明人： Paul J. Timans , Narasimha Acharya
IPC分类号： F23B3/30 , F27B5/14
CPC分类号： H01L21/67248 , C30B31/12 , H01L21/67115 , Y10S438/928
摘要： Pulsed processing methods and systems for heating objects such as semiconductor substrates feature process control for multi-pulse processing of a single substrate, or single or multi-pulse processing of different substrates having different physical properties. Heat is applied a controllable way to the object during a background heating mode, thereby selectively heating the object to at least generally produce a temperature rise throughout the object during background heating. A first surface of the object is heated in a pulsed heating mode by subjecting it to at least a first pulse of energy. Background heating is controlled in timed relation to the first pulse. A first temperature response of the object to the first energy pulse may be sensed and used to establish at least a second set of pulse parameters for at least a second energy pulse to at least partially produce a target condition.
摘要翻译：用于加热诸如半导体衬底的物体的脉冲处理方法和系统具有用于单个衬底的多脉冲处理的过程控制，或者具有不同物理性质的不同衬底的单脉冲或多脉冲处理。在背景加热模式期间，热量以可控的方式施加到物体，由此在背景加热期间选择性地加热物体以至少大体上产生整个物体的温度升高。物体的第一表面以脉冲加热模式被加热至少经受第一脉冲能量。背景加热以与第一脉冲的定时关系来控制。物体对第一能量脉冲的第一温度响应可以被感测并用于建立用于至少第二能量脉冲至少部分地产生目标条件的至少第二组脉冲参数。

117. 发明授权

US07977258B2 Method and system for thermally processing a plurality of wafer-shaped objects 有权
标题翻译：用于热处理多个晶片形物体的方法和系统
公开(公告)号：US07977258B2
公开(公告)日：2011-07-12
申请号：US11784503
申请日：2007-04-06
申请人： Zsolt Nenyei , Paul J. Timans , Wilfried Lerch , Jüergen Niess , Manfred Falter , Patrick Schmid , Conor Patrick O'Carroll , Rudy Cardema , Igor Fidelman , Sing-Pin Tay , Yao Zhi Hu , Daniel J. Devine
发明人： Zsolt Nenyei , Paul J. Timans , Wilfried Lerch , Jüergen Niess , Manfred Falter , Patrick Schmid , Conor Patrick O'Carroll , Rudy Cardema , Igor Fidelman , Sing-Pin Tay , Yao Zhi Hu , Daniel J. Devine
IPC分类号： H01L21/00 , F27B9/14
CPC分类号： H01L21/67115
摘要： Process and system for processing wafer-shaped objects, such as semiconductor wafers is disclosed. In accordance with the present disclosure, a multiple of two wafers are processed in a thermal processing chamber. The thermal processing chamber is in communication with at least one heating device for heating the wafers. The wafers are placed in the thermal processing chamber in a face-to-face configuration or in a back-to-back configuration.
摘要翻译：公开了用于处理诸如半导体晶片的晶片状物体的工艺和系统。根据本公开，在热处理室中处理两个晶片的倍数。热处理室与用于加热晶片的至少一个加热装置连通。将晶片以面对面配置或背对背配置放置在热处理室中。

118. 发明申请

US20100232470A1 SYSTEM AND PROCESS FOR CALIBRATING PYROMETERS IN THERMAL PROCESSING CHAMBERS 有权
标题翻译：用于在热处理室中校准紫外线的系统和方法
公开(公告)号：US20100232470A1
公开(公告)日：2010-09-16
申请号：US12787165
申请日：2010-05-25
申请人： Paul Janis Timans
发明人： Paul Janis Timans
IPC分类号： G01K11/12 , G01K15/00 , G01J5/00
CPC分类号： G01J5/0896 , G01J5/0003 , G01J5/0007 , G01J5/0285 , G01J5/06 , G01J5/08 , G01J5/0803 , G01J5/0821 , G01J5/0831 , G01J5/0846 , G01J5/089 , G01J5/522 , G01J5/58 , G01J2005/0048 , G01J2005/065 , H01L21/324 , H01L21/67115 , H01L21/67248
摘要： A method and system for calibrating temperature measurement devices, such as pyrometers, in thermal processing chambers are disclosed. According to the present invention, the system includes a calibrating light source that emits light energy onto a substrate contained in the thermal processing chamber. A light detector then detects the amount of light that is being transmitted through the substrate. The amount of detected light energy is then used to calibrate a temperature measurement device that is used in the system.
摘要翻译：公开了一种在热处理室中校准温度测量装置，例如高温计的方法和系统。根据本发明，该系统包括将光能发射到包含在热处理室中的基板上的校准光源。然后光检测器检测正在透过基板的光量。然后使用检测到的光能量来校准在系统中使用的温度测量装置。

119. 发明授权

US07745762B2 Optimizing the thermal budget during a pulsed heating process 有权
标题翻译：在脉冲加热过程中优化热预算
公开(公告)号：US07745762B2
公开(公告)日：2010-06-29
申请号：US11443464
申请日：2006-05-30
申请人： Paul Janis Timans
发明人： Paul Janis Timans
IPC分类号： F27B5/14 , C23C16/00
CPC分类号： H01L21/67115 , F27B5/04 , F27B17/0025 , H01L21/67109
摘要： An approach for optimizing the thermal budget during a pulsed heating process is disclosed. A heat sink or thermal transfer plate is configured and positioned near an object, such as a semiconductor wafer, undergoing thermal treatment. The heat sink is configured to enhance the thermal transfer rate from the object so that the object is rapidly brought down from the peak temperature after an energy pulse. High thermally-conductive material may be positioned between the plate and the object. The plate may include protrusions, ribs, holes, recesses, and other discontinuities to enhance heat transfer and avoid physical damage to the object during the thermal cycle. Additionally, the optical properties of the plate may be selected to allow for temperature measurements via energy measurements from the plate, or to provide for a different thermal response to the energy pulse. The plate may also allow for pre-heating or active cooling of the wafer.
摘要翻译：公开了一种在脉冲加热过程中优化热预算的方法。散热器或热转印板被配置和定位在经受热处理的诸如半导体晶片的物体附近。散热器被配置为增强从物体的热传递速率，使得物体在能量脉冲之后迅速从峰值温度降低。高导热材料可以位于板和物体之间。板可以包括突起，肋，孔，凹槽和其它不连续性，以增强热传递并且避免在热循环期间对物体的物理损伤。此外，可以选择板的光学性质以允许通过来自板的能量测量进行温度测量，或者为能量脉冲提供不同的热响应。该板还可以允许对晶片进行预热或主动冷却。

120. 发明授权

US07608802B2 Heating device for heating semiconductor wafers in thermal processing chambers 有权
标题翻译：用于在热处理室中加热半导体晶片的加热装置
公开(公告)号：US07608802B2
公开(公告)日：2009-10-27
申请号：US11399085
申请日：2006-04-06
申请人： Arnon Gat , Bob Bogart
发明人： Arnon Gat , Bob Bogart
IPC分类号： F27B5/14 , F26B19/00
CPC分类号： H01L21/67115 , F27B5/04 , F27B5/14 , F27B17/0025 , F27D19/00
摘要： An apparatus for heat treating semiconductor wafers is disclosed. The apparatus includes a heating device which contains an assembly of light energy sources for emitting light energy onto a wafer. The light energy sources can be placed in various configurations. In accordance with the present invention, tuning devices which are used to adjust the overall irradiance distribution of the light energy sources are included in the heating device. The tuning devices can be either active sources of light energy or passive sources which reflect, refract or absorb light energy. For instance, in one embodiment, the tuning devices can comprise a lamp spaced from a focusing lens designed to focus determined amounts of light energy onto a particular location of a wafer being heated.
摘要翻译：公开了一种用于热处理半导体晶片的设备。该装置包括加热装置，其包含用于将光能发射到晶片上的光能源组件。光能源可以放置在各种配置中。根据本发明，用于调节光能源的总体辐照度分布的调谐装置包括在加热装置中。调谐装置可以是活跃的光能源或反射，折射或吸收光能的无源光源。例如，在一个实施例中，调谐装置可以包括与聚焦透镜间隔开的灯，其设计成将确定的光能量聚焦到被加热晶片的特定位置上。

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