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101. 发明申请

US20220139890A1 LIGHT-EMITTING DIODE PACKAGING MODULE 有权
公开(公告)号：US20220139890A1
公开(公告)日：2022-05-05
申请号：US17578817
申请日：2022-01-19
申请人： QUANZHOU SANAN SEMICONDUCTOR TECHNOLOGY CO., LTD.
发明人： Zhen-duan LIN , Yanqiu LIAO , Shuning XIN , Weng-Tack WONG , Junpeng SHI , Aihua CAO , Changchin YU , Chi-Wei LIAO , Chen-ke HSU , Zheng WU , Chia-en LEE
IPC分类号： H01L25/075 , H01L33/62 , H01L33/54 , H01L33/38
摘要： A light-emitting diode (LED) packaging module includes LED chips, a wiring layer, and an encapsulant component. Each of the LED chips includes a chip first surface, a chip second surface, a chip side surface, and an electrode unit. The wiring layer is disposed on the chip second surfaces of the LED chips, and contacts and is electrically connected to the electrode units. The encapsulant component includes a first encapsulating layer that covers the chip side surface, and a second encapsulating layer that covers the wiring layer. The LED chip has a thickness TA, the first encapsulating layer has a thickness TB, in which TB/TA≥1.

102. 发明授权

US11322662B2 Optoelectronic device, conversion element, method of producing a plurality of conversion elements and method of producing an optoelectronic device 有权
公开(公告)号：US11322662B2
公开(公告)日：2022-05-03
申请号：US16398889
申请日：2019-04-30
申请人： OSRAM Opto Semiconductors GmbH
发明人： Martin Brandl , Alexander Baumgartner , Ion Stoll
IPC分类号： H01L33/50 , H01L33/56 , H01L33/62 , H01L33/54
摘要： The optoelectronic device including a radiation emitting semiconductor chip emitting electromagnetic radiation of a first wavelength range from a radiation exit surface, and a conversion element converting electromagnetic radiation of the first wavelength range into electromagnetic radiation of a second wavelength range at least partially and emitting electromagnetic radiation from a light coupling-out surface, wherein the light coupling-out surface of the conversion element is smaller than the radiation exit surface of the semiconductor chip.

103. 发明授权

US11296264B2 Light source module 有权
公开(公告)号：US11296264B2
公开(公告)日：2022-04-05
申请号：US16921877
申请日：2020-07-06
申请人： Coretronic Corporation
发明人： Wen-Hsun Yang , Yu-An Huang , Shih-Yi Lin
IPC分类号： H01L33/54 , H01L33/60 , H01L25/075
摘要： The disclosure provides a light source module including a substrate, multiple light-emitting elements, multiple reflecting elements, and an encapsulation layer. The reflecting elements and light-emitting elements are disposed in stack arrangement in the direction perpendicular to the substrate surface, respectively. The encapsulation layer disposed between the reflecting elements and light-emitting elements includes multiple first grooves and main portions. The first grooves located between the light-emitting elements are connected to each other. The main portions cover the light-emitting elements, and the reflecting elements and the light-emitting elements are disposed in the central position of the main portions having multiple first inclined ridges disposed around the central position to define the first grooves in the first direction parallel to the extending direction of the substrate surface. The first angle included between the first inclined ridge and the surface of the substrate is less than 90 degrees.

104. 发明授权

US11296259B2 Micro semiconductor chip, micro semiconductor structure, and transfer device 有权
公开(公告)号：US11296259B2
公开(公告)日：2022-04-05
申请号：US16718982
申请日：2019-12-18
申请人： PlayNitride Display Co., Ltd.
发明人： Chih-Ling Wu , Yi-Min Su , Shiang-Ning Yang
IPC分类号： H01L21/67 , H01L25/075 , H01L33/24 , H01L33/36 , H01L33/62 , H01L33/20 , H01L33/58 , H01L33/54 , H01L33/44
摘要： A micro semiconductor chip, a micro semiconductor structure, and a transfer device are provided. The micro semiconductor chip includes an epitaxial structure, a first-type electrode, a second-type electrode and a top light guide element. The epitaxial structure has a top surface, a bottom surface and a side surface. The top light guide element is disposed on the top surface of the epitaxial structure, wherein the top light guide element has a light extraction surface and a bottom surface, wherein the edge of the light extraction surface completely overlaps the edge of the bottom surface of the top light guide element. The light extraction surface is a curved surface, a combination of at least two curved surfaces, or a combination of at least one curved surface and at least one planar surface.

105. 发明申请

US20220102596A1 LIGHT-EMITTING DEVICE 有权
公开(公告)号：US20220102596A1
公开(公告)日：2022-03-31
申请号：US17489475
申请日：2021-09-29
申请人： NICHIA CORPORATION
发明人： Kazuya MATSUDA , Atsushi BANDO
IPC分类号： H01L33/50 , H01L33/54 , H01L33/62
摘要： A light-emitting device includes: a first light-emitting element and a second light-emitting element, each configured to be independently driven; a wall portion located between the first light-emitting element and the second light-emitting element; a first light-transmissive member separated from the second light-emitting element by the wall portion and covering at least a portion of lateral surfaces of the first light-emitting element, wherein the first light-transmissive member contains a first wavelength converting member; and a second light-transmissive member covering the first light-emitting element, the second light-emitting element, and the first light-transmissive member in a plan view, wherein the second light-transmissive member contains a second wavelength converting member. A peak emission wavelength of the first wavelength converting member is longer than a peak emission wavelength of the second wavelength converting member.

106. 发明授权

US11289626B2 Semiconductor light-emitting device including a reflector layer having a multi-layered structure 有权
公开(公告)号：US11289626B2
公开(公告)日：2022-03-29
申请号：US16800037
申请日：2020-02-25
申请人： SAMSUNG ELECTRONICS CO., LTD.
发明人： JungSung Kim , Junghee Kwak , Seong Seok Yang
IPC分类号： H01L33/46 , H01L33/38 , H01L33/32 , H01L33/42 , H01L33/54 , H01L33/62 , H01L33/40 , H01L33/06 , H01L33/10
摘要： A semiconductor light-emitting device includes a light-emitting structure including a first semiconductor layer, an active layer, and a second semiconductor layer which are sequentially stacked, a first insulating layer on the second semiconductor layer with a plurality of first openings having first widths and a plurality of second openings having second widths different from the first widths, a first electrode electrically connected to the first semiconductor layer through the first openings, a first sub-electrode layer between the second semiconductor layer and the first insulating layer, the first sub-electrode layer being exposed through the second openings, and a second sub-electrode layer on the first insulating layer, the second sub-electrode layer being connected to the first sub-electrode layer through the second openings, wherein a first distance between the first openings closest to each other is different from a second distance between the second openings closest to each other.

107. 发明授权

US11276802B2 Light emitting device 有权
公开(公告)号：US11276802B2
公开(公告)日：2022-03-15
申请号：US16922827
申请日：2020-07-07
申请人： NICHIA CORPORATION
发明人： Motokazu Yamada
IPC分类号： H01L33/44 , H01L33/62 , H01L25/075 , H05K1/18 , H05K3/00 , F21V21/08 , F21S4/24 , H01L33/08 , H01L33/56 , F21Y103/10 , F21Y115/10 , H01L33/54 , F21Y101/00
摘要： A light emitting device includes a flexible substrate, at least one light emitting element, a cover member, a reflective member and a light transmissive member. The flexible substrate has a first surface and a second surface opposite to the first surface, and includes a flexible base member and a plurality of wiring portions disposed on a first surface side. The light emitting element is arranged on the first surface of the flexible substrate and electrically connected to the wiring portions. The cover member is arranged on the second surface of the flexible substrate and defines a through hole at a position overlapping the light emitting element in a plan view. The reflective member covers at least a part of a lower surface and at least a part of a side surface of the light emitting element. The light transmissive member covers a top surface of the light emitting element.

108. 发明申请

US20220077366A1 LIGHT SOURCE MODULE AND MANUFACTURING METHOD THEREOF 有权
公开(公告)号：US20220077366A1
公开(公告)日：2022-03-10
申请号：US17082217
申请日：2020-10-28
申请人： Primax Electronics Ltd.
发明人： Ya-Chin Tu , Hung-Wei Kuo
IPC分类号： H01L33/62 , H01L33/54 , H01L25/075
摘要： A light source module includes a transparent conductive substrate and a light-emitting element. The light-emitting element is installed on the transparent conductive film, and electrically connected with the transparent conductive film. The light-emitting element is flip-chip LED, and/or the light-emitting element is not equipped with a lead frame. Moreover, the present invention further provides a manufacturing method of the light source module.

109. 发明申请

US20220077359A1 LIGHT EMITTING DIODE PACKAGE HAVING A PROTECTIVE COATING 有权
公开(公告)号：US20220077359A1
公开(公告)日：2022-03-10
申请号：US17013985
申请日：2020-09-08
申请人： Tek Beng LOW , Chee Sheng LIM
发明人： Tek Beng LOW , Chee Sheng LIM
IPC分类号： H01L33/56 , H01L33/54
摘要： A light emitting diode package, including: a housing, wherein the housing includes a top section having an aperture; a lead frame associated with the housing, wherein the lead frame includes a first electrode and a second electrode; a light emitting diode light source, wherein the light emitting diode light source is associated with the aperture of the housing; an encapsulant, wherein the encapsulant is associated with at least a portion of the light emitting diode light source and the housing; and a protective coating associated with at least a portion of the encapsulant and the housing, wherein the protective coating reduces and/or eliminates oxidative degradation, thermal degradation, and/or photodegradation.

110. 发明申请

US20220077132A1 SYSTEM-LEVEL PACKAGING STRUCTURE AND METHOD FOR LED CHIP 有权
公开(公告)号：US20220077132A1
公开(公告)日：2022-03-10
申请号：US17471574
申请日：2021-09-10
申请人： SJ SEMICONDUCTOR (JIANGYIN) CORPORATION
发明人： Yenheng Chen , Chengchung Lin
IPC分类号： H01L25/18 , H01L23/367 , H01L23/31 , H01L23/538 , H01L23/00 , H01L33/62 , H01L33/54 , H01L23/42 , H01L21/56 , H01L21/78 , H01L21/48
摘要： The present invention provides a SiP structure and method for a light emitting diode (LED) chip. The packaging structure includes: a heat sink structure, a first chip, a first packaging layer, a second packaging layer, a rewiring layer, an LED chip, a printed circuit board (PCB), and a third packaging layer. In the present invention, chips with a plurality of functions, including the first chip, the LED chip, and the like, are integrated into one packaging structure through fan-out system-level packaging, to meet a plurality of different system functional requirements and improve the performance of the packaging system. By the rewiring layer, a metal connecting pillar, a metal lead wire, and the like, the first chip, the LED chip, and the PCB are electrically connected, to achieve a three-dimensional vertically stacked package thereby effectively reducing the area of a SiP and improving the integration of the packaging system.

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