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101. 发明申请

US20080299878A1 SYSTEMS AND METHODS FOR REDUCING ELECTROSTATIC CHARGE OF SEMICONDUCTOR WAFERS 有权
标题翻译：用于减少半导体波导静电荷的系统和方法
公开(公告)号：US20080299878A1
公开(公告)日：2008-12-04
申请号：US11757911
申请日：2007-06-04
申请人： A. Trent Ward , Jeffrey M. Durning , Sherman D. Stump , Curtis J. Ritter, III
发明人： A. Trent Ward , Jeffrey M. Durning , Sherman D. Stump , Curtis J. Ritter, III
IPC分类号： B24B7/04 , B65H1/00
CPC分类号： B24B37/04 , B24B55/00
摘要： A chemical-mechanical polishing machine and associated methods are disclosed. One embodiment of the machine includes a polishing pad, a wafer carrier corresponding to the polishing pad and configured to carry a semiconductor wafer, and a transfer station proximate to the polishing pad for holding the wafer during loading and/or unloading. At least one of the wafer carrier and the transfer station is configured to dissipate electrostatic charge from the wafer.
摘要翻译：公开了一种化学机械抛光机及相关方法。该机器的一个实施例包括抛光垫，对应于抛光垫并被配置为承载半导体晶片的晶片载体和靠近抛光垫的传送站，用于在装载和/或卸载期间保持晶片。晶片载体和转移站中的至少一个被配置为从晶片消散静电电荷。

102. 发明申请

US20080292869A1 Methods of bonding superabrasive particles in an organic matrix 审中-公开
标题翻译：将超级磨料颗粒粘合在有机基质中的方法
公开(公告)号：US20080292869A1
公开(公告)日：2008-11-27
申请号：US11805549
申请日：2007-05-22
申请人： Chien-Min Sung
发明人： Chien-Min Sung
IPC分类号： B24D11/02 , B24B7/04 , B32B3/00 , B32B33/00
CPC分类号： B24B53/017 , B24B53/12 , B24D3/28 , B24D18/00 , Y10T428/25 , Y10T428/265
摘要： Superabrasive tools and their methods of manufacture are disclosed. In one aspect, a method of improving retention of superabrasive particles held in a solidified organic material layer of an abrading tool, a portion of each of said superabrasive particles protruding out of the solidified organic material layer is provided. Such a method may include securing the plurality of superabrasive particles in the solidified organic material layer such that the organic material layer wicks up the protruding portions of the superabrasive particles. In addition to the wicking of the organic material layer around the superabrasive particles, various additional parameters may be utilized to improve retention. For example, in another aspect the plurality of superabrasive particles may be secured in an arrangement that minimizes mechanical stress impinging on protruding portions of any individual superabrasive particle when used to abrade a work piece. As an example, the arrangement of the plurality of superabrasive particles may be configured to uniformly distribute drag forces across substantially each superabrasive particle.
摘要翻译：公开了超研磨工具及其制造方法。一方面，提供了保持在研磨工具的固化有机材料层中的超研磨颗粒的保留性的方法，每个所述超级磨料颗粒的一部分从固化的有机材料层突出出来。这种方法可以包括将多个超级磨料颗粒固定在固化的有机材料层中，使得有机材料层吸收超级磨料颗粒的突出部分。除了超级磨料颗粒周围的有机材料层的芯吸之外，可以使用各种附加参数来改善保留。例如，在另一方面，多个超级磨料颗粒可以以使得当用于研磨工件时碰撞在任何单个超级磨料颗粒的突出部分上的机械应力最小化的结构来固定。作为示例，多个超级磨料颗粒的布置可以被配置成均匀地分布基本上每个超级磨料颗粒的阻力。

103. 发明申请

US20080164458A1 SAPPHIRE SUBSTRATES AND METHODS OF MAKING SAME 有权
公开(公告)号：US20080164458A1
公开(公告)日：2008-07-10
申请号：US11963420
申请日：2007-12-21
申请人： Brahmanandam V. Tanikella , Matthew A. Simpson , Palaniappan Chinnakaruppan , Robert A. Rizzuto , Ramanujam Vedantham
发明人： Brahmanandam V. Tanikella , Matthew A. Simpson , Palaniappan Chinnakaruppan , Robert A. Rizzuto , Ramanujam Vedantham
IPC分类号： B24B7/04 , H01L33/00 , H01L29/04
CPC分类号： B24B7/228 , Y10T428/257 , Y10T428/26
摘要： A sapphire substrate includes a generally planar surface having a crystallographic orientation selected from the group consisting of a-plane, r-plane, m-plane, and c-plane orientations, and having a nTTV of not greater than about 0.037 μm/cm2, wherein nTTV is total thickness variation normalized for surface area of the generally planar surface, the substrate having a diameter not less than about 9.0 cm.

104. 发明申请

US20080153392A1 Chemical Mechanical Planarization Composition, System, and Method of Use 有权
标题翻译：化学机械平面化组合物，系统和使用方法
公开(公告)号：US20080153392A1
公开(公告)日：2008-06-26
申请号：US11613646
申请日：2006-12-20
申请人： John J. Gagliardi , Patricia M. Savu
发明人： John J. Gagliardi , Patricia M. Savu
IPC分类号： B24B7/04 , C09K13/06 , C09K3/14
CPC分类号： B24B7/228 , C09G1/04 , H01L21/31053
摘要： The disclosure relates to chemical mechanical planarization (CMP) polishing compositions including proline and a fluorochemical surfactant. The wafer polishing composition may be used as a solution substantially free of abrasive particles, the composition of which can be adjusted to control Oxide Removal Rate and oxide over nitride Selectivity Ratio in Shallow Trench Isolation (STI) processing of semiconductor wafers using a fixed abrasive CMP process. In certain embodiments, the disclosure provides a working liquid for fixed abrasive CMP including proline and a fluorochemical surfactant at a pH from 9 to 11. When used in a fixed abrasive CMP system and method for STI, exemplary working liquids may yield an Oxide Removal Rate of at least 500 angstroms per minute, and an oxide over nitride Selectivity Ratio of at least 5.
摘要翻译：本公开涉及包括脯氨酸和含氟化学表面活性剂的化学机械平面化（CMP）抛光组合物。晶片抛光组合物可以用作基本上不含磨料颗粒的溶液，其组成可以调节以控制氧化物去除速率和氧化物与氮化物的选择性比率，使用固定的研磨剂CMP进行浅沟槽隔离（STI）处理半导体晶片处理。在某些实施方案中，本公开提供了在9至11的pH下包含脯氨酸和含氟表面活性剂的固定研磨剂CMP的工作液体。当用于固定的研磨剂CMP系统和STI的方法时，示例性工作液体可产生氧化物去除率至少500埃/分钟，而氮化物选择性比至少为5。

105. 发明申请

US20080119116A1 Method and apparatus for chemical mechanical polishing 有权
标题翻译：化学机械抛光方法和装置
公开(公告)号：US20080119116A1
公开(公告)日：2008-05-22
申请号：US11600723
申请日：2006-11-17
申请人： Chih-Min Wen , Chen-Hsiang Liao
发明人： Chih-Min Wen , Chen-Hsiang Liao
IPC分类号： B24B29/02 , B24B7/04
CPC分类号： B24B37/04 , B24B57/02
摘要： A method and apparatus for performing first and second polishings on a workpiece wherein the first and second polishings are performed using different operating parameters.
摘要翻译：一种用于在工件上进行第一和第二抛光的方法和装置，其中使用不同的操作参数执行所述第一和第二抛光。

106. 发明申请

US20080038994A1 METHOD TO PASSIVATE CONDUCTIVE SURFACES DURING SEMICONDUCTOR PROCESSING 有权
标题翻译：在半导体加工过程中钝化导电表面的方法
公开(公告)号：US20080038994A1
公开(公告)日：2008-02-14
申请号：US11670176
申请日：2007-02-01
申请人： John Flake , Kevin Cooper , Saifi Usmani
发明人： John Flake , Kevin Cooper , Saifi Usmani
IPC分类号： B24B7/04 , B24B29/00 , C09K13/00
CPC分类号： C11D3/28 , C11D1/146 , C11D1/345 , C11D1/62 , C11D1/72 , C11D3/0073 , C11D3/2003 , C11D3/382 , C11D3/43 , C11D11/0047 , H01L21/02074 , H01L21/3212 , H01L21/7684
摘要： A method for processing semiconductor wafers is disclosed. A solution is applied to a semiconductor wafer to prevent dendrites and electrolytic reactions at the surface of metal interconnects. The solution can be applied during a CMP process or during a post CMP cleaning process. The solution may include a surfactant and a corrosion inhibitor. In one embodiment, the concentration of the surfactant in the solution is less than approximately one percent by weight and the concentration of the corrosion inhibitor in the solution is less than approximately one percent by weight. The solution may also include a solvent and a cosolvent. In an alternate embodiment, the solution includes a solvent and a cosolvent without the surfactant and corrosion inhibitor. In one embodiment, the CMP process and post CMP cleaning process can be performed in the presence of light having a wavelength of less than approximately one micron.
摘要翻译：公开了一种处理半导体晶片的方法。将解决方案应用于半导体晶片以防止金属互连表面处的枝晶和电解反应。该解决方案可以在CMP过程中或CMP后清洗过程中应用。溶液可以包括表面活性剂和腐蚀抑制剂。在一个实施方案中，溶液中表面活性剂的浓度小于约1重量％，并且溶液中腐蚀抑制剂的浓度小于约1重量％。溶液还可以包括溶剂和助溶剂。在另一个实施方案中，溶液包括溶剂和没有表面活性剂和腐蚀抑制剂的助溶剂。在一个实施例中，可以在具有小于约一微米的波长的光的存在下执行CMP工艺和后CMP清洁工艺。

107. 发明申请

US20050173377A1 Semiconductor wafer, apparatus and process for producing the semiconductor wafer 审中-公开
标题翻译：用于制造半导体晶片的半导体晶片，装置和工艺
公开(公告)号：US20050173377A1
公开(公告)日：2005-08-11
申请号：US11051894
申请日：2005-02-04
申请人： Georg Pietsch , Michael Kerstan , Werner Blaha
发明人： Georg Pietsch , Michael Kerstan , Werner Blaha
IPC分类号： B24B7/04 , B24B7/17 , B24B7/22 , B24D7/14 , H01L21/302 , H01L21/304
CPC分类号： H01L21/02013 , B24B7/17 , B24B7/228 , B24D7/14
摘要： The invention relates to a process for producing a semiconductor wafer by double-side grinding of the semiconductor wafer, in which the semiconductor wafer is simultaneously ground on both sides, first by rough-grinding and then by finish-grinding, using a grinding tool. The semiconductor wafer, between the rough-grinding and the finish-grinding, remains positioned in the grinding machine, and the grinding tool continues to apply a substantially constant load during the transition from rough-grinding to finish-grinding. The invention also relates to an apparatus for carrying out the process and to a semiconductor wafer having a local flatness value on a front surface of less than 16 nm in a measurement window of 2 mm×2 mm area and of less than 40 nm in a measurement window of 10 mm×10 mm area.
摘要翻译：本发明涉及通过半导体晶片的双面研磨制造半导体晶片的方法，其中半导体晶片在两侧同时研磨，首先通过粗磨，然后使用研磨工具进行精磨。在粗磨和精磨之间的半导体晶片保持定位在研磨机中，并且研磨工具在从粗磨到精磨过渡期间继续施加基本恒定的载荷。本发明还涉及一种用于在2mm×2mm面积的测量窗口和在测量窗口中小于40nm的小于16nm的前表面上具有局部平坦度值的半导体晶片的实施方法和半导体晶片 10毫米×10毫米的面积。

108. 发明申请

US20050070209A1 Method and system for controlling the chemical mechanical polishing by using a sensor signal of a pad conditioner 有权
公开(公告)号：US20050070209A1
公开(公告)日：2005-03-31
申请号：US10859336
申请日：2004-06-02
申请人： Gerd Marxsen , Jens Kramer , Uwe Stoeckgen
发明人： Gerd Marxsen , Jens Kramer , Uwe Stoeckgen
IPC分类号： B24B7/04 , B24B37/00 , B24B37/04 , B24B49/16 , B24B53/007 , B24B53/02 , B24B49/00
CPC分类号： B24B53/017 , B24B37/00 , B24B37/04 , B24B49/16 , B24B53/02
摘要： In a system and a method according to the present invention, a sensor signal, such as a motor current signal, from a drive assembly of a pad conditioning system is used to control a CMP system to compensate for a change in the conditions of consumables, thereby enhancing process stability.

109. 发明授权

US6042459A Surface machining method and apparatus 失效
公开(公告)号：US6042459A
公开(公告)日：2000-03-28
申请号：US88480
申请日：1998-06-02
申请人： Katsuo Honda
发明人： Katsuo Honda
IPC分类号： B24B7/04 , B24B7/16 , B24B7/22 , B24B5/01
CPC分类号： B24B7/04 , B24B7/16 , B24B7/228
摘要： A wafer is rotated on its axis, which is biased with regard to an axis of a grinding wheel, and revolves around an axis which is biased with regard to the axis of the wafer and the axis of the grinding wheel. In this state, the grinding wheel is abutted against the surface of the wafer. Thus, all abrasive grains on the grinding wheel can act on the whole surface of the wafer.

110. 发明授权

US6039635A Surface polishing apparatus including a dresser 失效
标题翻译：表面抛光装置，包括修整器
公开(公告)号：US6039635A
公开(公告)日：2000-03-21
申请号：US141421
申请日：1998-08-27
申请人： Masashige Mitsuhashi , Kenichi Ohno , Kenichi Yoshida
发明人： Masashige Mitsuhashi , Kenichi Ohno , Kenichi Yoshida
IPC分类号： B24B37/00 , B24B53/007 , B24B53/017 , B24B57/02 , B24B7/04
CPC分类号： B24B53/017 , B24B57/02
摘要： A surface polishing apparatus which presses a work piece 12 into contact with the processing surface of a disk-shaped polishing tool 11 which is rotated and driven, to polish the surface of the work piece 12 as supplying abrasive slurry to the processing surface. The surface polishing apparatus includes an abrasive slurry-supply mechanism 13 which supplies abrasive slurry to the processing surface. The slurry supply mechanism is provided on the backward side of the work piece with respect to the rotation direction of the polishing tool. A dresser 23, which sets the processing surface, is provided on the forward side of the work piece an abrasive slurry-suction mechanism, which sucks and recycles abrasive slurry from the processing surface, is provided on the forward side of the dresser and on the backward side of abrasive slurry-supply mechanism 13.
摘要翻译：一种表面抛光装置，其将工件12压向与旋转和驱动的盘形抛光工具11的处理表面接触，以便在将磨料浆料供应到处理表面时抛光工件12的表面。表面抛光装置包括将磨料浆料供给到处理表面的磨料浆料供给机构13。浆料供给机构相对于研磨工具的旋转方向设置在工件的后侧。设置处理表面的修整器23设置在工件的前侧，在修整器的前侧设置有从处理表面吸入和再循环磨料浆料的研磨浆料 - 抽吸机构，研磨浆料供给机构13的后侧。

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