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    • 103. 发明授权
    • Mercury vapor high-pressure discharge lamp and irradiation method,
particularly for mask pattern exposure of semiconductor wafers
    • 汞蒸气高压放电灯和照射方法,特别适用于半导体晶片的掩模图案曝光
    • US5650630A
    • 1997-07-22
    • US410724
    • 1995-03-27
    • Joern DierksJuergen Maier
    • Joern DierksJuergen Maier
    • G03F7/20H01J61/20H01J61/30H01J61/40H01J61/82H01J17/16H01J37/00
    • G03F7/70016H01J61/20H01J61/302H01J61/40H01J61/822
    • To eliminate radiation from the mercury high-pressure discharge lamp of wlengths below 365 nm, the lamp includes a discharge vessel of quartz glass which is doped with vanadium in a quantity of up to about only 250 ppm, by weight, with respect to 1 mm of wall thickness of the quartz glass. This absorbed radiation also heats the quartz glass, so that the outside wall temperature of the vessel can be maintained between about 400.degree. and 950.degree. C. The effect can be enhanced by adding, additionally, titanium and/or tin to provide metal ions to the doping substance, in an overall quantity of up to 500 ppm, by weight. Alternatively, the quartz glass can be coated with TiO.sub.2 or SnO.sub.2. Suitable wall thicknesses for the discharge vessel are between 1 and 5 mm, and the fill therein is preferably mercury in a quantity of between 0.5 and 15 mg/cm.sup.3 and xenon with a cold fill pressure of 0.1 to 2.5 bar. Electrode spacing of the lamp is preferably between 2 and 5 mm. The vanadium portion preferably is less than 200 ppm and may, most desirably, be between 20 and 150 ppm, with respect to 1 mm wall thickness of the quartz glass of the discharge vessel.
    • 为了消除波长低于365nm的汞高压放电灯的辐射,该灯包括石英玻璃的放电容器,该放电容器掺杂有至少约250ppm重量的钒,相对于1mm 的石英玻璃的壁厚。 这种吸收的辐射也加热了石英玻璃,使得容器的外壁温度可以保持在约400℃和950℃之间。通过添加钛和/或锡以提供金属离子可以提高效果 该掺杂物质的总量高达500ppm重量。 或者,石英玻璃可以涂覆有TiO 2或SnO 2。 放电容器的合适的壁厚在1至5mm之间,并且其中的填充物优选为0.5至15mg / cm 3的水银,氙气的冷填充压力为0.1至2.5巴。 灯的电极间距优选为2〜5mm。 相对于放电容器的石英玻璃的1mm厚度,钒部分优选小于200ppm,并且最优选地在20和150ppm之间。
    • 107. 发明授权
    • Scanning apparatus linearization and calibration system
    • 扫描仪线性化和校准系统
    • US5469734A
    • 1995-11-28
    • US357133
    • 1994-12-15
    • Marc R. Schuman
    • Marc R. Schuman
    • G01B7/34G01Q40/00H01J37/00H01J37/20
    • G01Q40/00B82Y35/00Y10S977/851
    • The scanning apparatus linearization and calibration system includes an electromechanical scanner having a sample stage portion, and a deflecting member, mounted between the scanning means and a fixed mounting member, that undergoes deflection in response to displacement of the scanner sample stage portion in at least one dimension of displacement. Strain gauges are mounted to the deflecting member for measuring the deflection of the deflecting member and for generating a deflection output signal indicative of an amount of deflection of the deflecting member, to provide a highly sensitive indication of actual displacement of the sample stage of the scanning apparatus. Control circuitry also provides for open loop displacement correction and for closed loop feedback correction of the position of the scanner sample stage.
    • 扫描装置线性化和校准系统包括具有样品台部分的机电扫描器和安装在扫描装置和固定安装构件之间的偏转构件,其响应于扫描仪样品台部分在至少一个中的位移而经历偏转 位移尺寸 应变计被安装到偏转构件,用于测量偏转构件的偏转并产生指示偏转构件的偏转量的偏转输出信号,以提供扫描样本台的实际位移的高度敏感指示 仪器。 控制电路还提供开环位移校正和用于扫描仪样品台位置的闭环反馈校正。
    • 109. 发明授权
    • Ion source gaseous discharge initiation impulse valve
    • 离子源气体放电启动脉冲阀
    • US5438205A
    • 1995-08-01
    • US225952
    • 1994-04-08
    • James B. Schroeder
    • James B. Schroeder
    • H01J27/02H01J37/00
    • H01J27/022
    • An impulse valve for an ion source is positioned between an ion source chamber and a gas metering valve. The impulse valve is a two-position solenoid-controlled valve which is closed in its off position. In the off-position, the valve forms a reservoir between the valve stem of the impulse valve and the metering orifice of the metering valve. In the off condition, the gas reservoir fills with gas that over time equilibrates to the pressure of the gas supplied to the metering valve. The volume of the gas reservoir and the pressure of the gas which is supplied to the metering valve are chosen so that when the two-position valve is open, the gas contained in the reservoir is sufficient to pressurize the ion source chamber to a pressure of approximately 0.1 Torr. Thus, when the impulse valve opens, a pulse of gas flows into the ion source chamber, where a plasma discharge is initiated. As ions and gas flow through the ion discharge port, the pressure in the ion chamber drops until it reaches an equilibrium pressure with the supply of gas through the metering valve. This pressure is typically one-tenth of the initiation pressure, or 0.01 Torr. The impulse valve also serves to provide a fail-safe shut-down mechanism, so that when power is lost, the valve returns to its closed condition.
    • 用于离子源的脉冲阀位于离子源室和气体计量阀之间。 脉冲阀是两位电磁阀,在其关闭位置处关闭。 在关闭位置,阀在冲击阀的阀杆和计量阀的计量孔之间形成储存器。 在关闭状态下,气体储存器充满随着时间平衡的供应给计量阀的气体压力的气体。 选择供给到计量阀的气体的容积和气体的压力,使得当两位置阀打开时,储存器中所含的气体足以将离子源室加压至 约0.1乇。 因此,当脉冲阀打开时,气体脉冲流入离子源室,其中发射等离子体放电。 当离子和气体流过离子排放口时,离子室中的压力下降,直到通过计量阀供给气体达到平衡压力。 该压力通常是起始压力的十分之一,或0.01托。 脉冲阀还用于提供故障安全关闭机构,以便在断电时,阀返回到其关闭状态。