专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

101. 发明申请

US20150362314A1 METHOD OF CHARACTERIZING MICROFABRICATION PROCESS AND PRODUCTS THEREOF 审中-公开
标题翻译：表征微生物过程的方法及其制品
公开(公告)号：US20150362314A1
公开(公告)日：2015-12-17
申请号：US14762613
申请日：2014-01-23
申请人： RUDOLPH TECHNOLOGIES, INC.
发明人： Rajiv Roy , David Grant , David S. Marx , Hanh Chu
IPC分类号： G01B11/27
CPC分类号： G01B11/272 , G01B9/02044 , G01B9/0209 , G01N21/95692 , H01L22/12 , H01L2224/16 , H01L2924/15311
摘要： A method for characterizing a microfabrication process and the product thereof is described. A substrate having TSV's formed therein is assessed by determining the geometries and positions of the top and bottom ends of a TSV. Individual TSV's as well as the entire pattern of TSV's formed in a substrate may be assessed.
摘要翻译：描述微加工过程表征的方法及其产物。通过确定TSV的顶端和底端的几何形状和位置来评估其中形成有TSV的衬底。可以评估个体TSV以及在底物中形成的TSV的整个图案。

102. 发明申请

US20150360158A1 HYBRID FELTS OF ELECTROSPUN NANOFIBERS 有权
标题翻译： ELECTROSPUN NANOFIBERS的混合纤维
公开(公告)号：US20150360158A1
公开(公告)日：2015-12-17
申请号：US14000981
申请日：2013-02-14
申请人： Todd MENKHAUS , Hao FONG , NANOPAREIL, LLC
发明人： Todd MENKHAUS , Hao FONG
IPC分类号： B01D39/16 , D01D5/00
CPC分类号： B01D39/1615 , B01D15/327 , B01D15/361 , B01D15/3804 , B01D15/3809 , B01D39/1623 , B01D39/1676 , B01D2239/025 , B01D2239/0414 , B01J20/24 , B01J20/28007 , B01J20/28038 , B01J20/3212 , B01J20/3217 , B01J20/3248 , B01J20/3293 , C07K1/22 , D01D5/0007 , D01D5/003 , D01F2/24 , D01F6/44 , D01F6/88 , H01L23/48 , H01L24/16 , H01L24/72 , H01L24/73 , H01L24/90 , H01L24/91 , H01L25/0652 , H01L25/50 , H01L2224/131 , H01L2224/16227 , H01L2224/73201 , H01L2224/81138 , H01L2224/81815 , H01L2224/9211 , H01L2225/06517 , H01L2225/06527 , H01L2225/06531 , H01L2225/06562 , H01L2225/06593 , H01L2924/0002 , H01L2924/15153 , H01L2924/157 , H01L2924/15787 , H01L2924/15788 , H01L2924/1579 , H01L2924/3511 , H01L2924/37001 , H01L2924/00 , H01L2924/014 , H01L2224/16 , H01L2224/72 , H01L2224/81 , H01L2224/90 , H01L2924/00014 , H01L2924/00012
摘要： The present invention relates generally to compositions for use in biological and chemical separations, as well as other applications. More specifically, the present invention relates to hybrid felts fabricated from electrospun nanofibers with high permeance and high capacity. Such hybrid felts utilize derivatized cellulose, and at least one non-cellulose-based polymer that may be removed from the felt by subjecting it to moderately elevated temperatures and/or solvents capable of dissolving the non-cellulose-based polymer to leave behind a porous nanofiber felt having more uniform pore sizes and other enhanced properties when compared to single component nanofiber felts.
摘要翻译：本发明一般涉及用于生物和化学分离以及其它应用的组合物。更具体地说，本发明涉及由具有高渗透性和高容量的电纺丝纳米纤维制成的混合毡。这样的混合毛毡使用衍生的纤维素和至少一种非纤维素基聚合物，其可以通过使其适度升高的温度和/或能够溶解非纤维素基聚合物的溶剂留在多孔与单组分纳米纤维毡相比，纳米纤维毡具有更均匀的孔径和其它增强的性能。

103. 发明申请

US20150351225A1 METAL-BASED MOUNTING BOARD AND METHOD OF MANUFACTURING METAL-BASED MOUNTING BOARD 审中-公开
标题翻译：基于金属的安装板和制造金属安装板的方法
公开(公告)号：US20150351225A1
公开(公告)日：2015-12-03
申请号：US14728150
申请日：2015-06-02
申请人： SUMITOMO BAKELITE CO., LTD.
发明人： Yoshihide Nii , Toshio Komiyatani , Yukiharu Yuzuriha
IPC分类号： H05K1/02 , H05K1/18 , H05K3/40 , H05K1/11
CPC分类号： H05K1/184 , H01L2224/16 , H01L2224/16225 , H01L2924/13055 , H01L2924/13091 , H05K1/021 , H05K1/056 , H05K3/3447 , H01L2924/00
摘要： A metal-based mounting board according to the present invention includes: a metal-based circuit board including a metal substrate through which a through-hole is provided along a thickness direction thereof, an insulating film provided on the metal substrate and a metal film provided on the insulating film, wherein the through-hole opens on a surface of the metal film on the opposite side of the metal substrate via the insulating film and the metal film; an electronic component connected to the metal film, the electronic component including an electronic component main body and a conductive leg portion electrically connected to the electronic component main body and inserted into the through-hole; and an insulating portion provided at least between the leg portion locating inside the through-hole and the metal substrate, and having a function of preventing them from making contact with each other.
摘要翻译：根据本发明的金属基安装板包括：金属基电路板，包括金属基板，通过该金属基板沿其厚度方向设置通孔，设置在金属基板上的绝缘膜和设置在金属基板上的金属膜在所述绝缘膜上，所述通孔经由所述绝缘膜和所述金属膜在所述金属基板的相反侧的所述金属膜的表面上开口; 连接到所述金属膜的电子部件，所述电子部件包括电子部件主体和电连接到所述电子部件主体并插入所述通孔的导电性支腿部; 以及至少设置在位于所述通孔内的所述脚部与所述金属基板之间的绝缘部，并且具有防止它们彼此接触的功能。

104. 发明申请

US20150349835A1 METHODS AND SYSTEMS FOR HIGH BANDWIDTH CHIP-TO-CHIP COMMUNCATIONS INTERFACE 有权
标题翻译：用于高带宽到芯片间通信接口的方法和系统
公开(公告)号：US20150349835A1
公开(公告)日：2015-12-03
申请号：US14823870
申请日：2015-08-11
申请人： KANDOU LABS S.A.
发明人： John Fox , Brian Holden , Peter Hunt , John D. Keay , Amin Shokrollahi , Andrew Kevin John Stewart , Giuseppe Surace , Roger Ulrich , Richard Simpson
IPC分类号： H04B1/40 , H04L29/08
CPC分类号： H03K19/018521 , G06F13/4282 , H01L23/147 , H01L23/5384 , H01L2224/16 , H01L2924/15174 , H01L2924/15192 , H03K3/037 , H03K19/017509 , H04B1/40 , H04L67/12 , Y02D10/14 , Y02D10/151
摘要： Systems and methods are described for transmitting data over physical channels to provide a high bandwidth, low latency interface between integrated circuit chips with low power utilization. Communication is performed using group signaling over multiple wires using a vector signaling code, where each wire carries a low-swing signal that may take on more than two signal values.
摘要翻译：描述了用于通过物理信道传输数据的系统和方法，以在具有低功率利用率的集成电路芯片之间提供高带宽，低延迟的接口。使用矢量信令码通过多条线路使用组信令进行通信，其中每条线路携带可能承受多于两个信号值的低摆动信号。

105. 发明申请

US20150311165A1 SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE 有权
公开(公告)号：US20150311165A1
公开(公告)日：2015-10-29
申请号：US14795955
申请日：2015-07-10
申请人： ROHM CO., LTD.
发明人： Osamu MIYATA , Masaki KASAI , Shingo HIGUCHI
IPC分类号： H01L23/00 , H01L23/31 , H01L23/528 , H01L23/29
CPC分类号： H01L23/3178 , H01L21/78 , H01L23/291 , H01L23/293 , H01L23/3114 , H01L23/3142 , H01L23/3171 , H01L23/3192 , H01L23/528 , H01L23/544 , H01L23/562 , H01L24/02 , H01L24/05 , H01L24/10 , H01L24/13 , H01L24/94 , H01L24/96 , H01L2223/5446 , H01L2224/02255 , H01L2224/0226 , H01L2224/02377 , H01L2224/02381 , H01L2224/0239 , H01L2224/024 , H01L2224/05001 , H01L2224/05008 , H01L2224/05022 , H01L2224/05124 , H01L2224/05568 , H01L2224/05569 , H01L2224/05571 , H01L2224/05647 , H01L2224/12105 , H01L2224/13023 , H01L2224/13024 , H01L2224/13099 , H01L2224/131 , H01L2224/13124 , H01L2224/16 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01029 , H01L2924/01033 , H01L2924/01074 , H01L2924/014 , H01L2924/05042 , H01L2924/05442 , H01L2924/0665 , H01L2924/07025 , H01L2924/10161 , H01L2924/10253 , H01L2924/12042 , H01L2924/182 , H01L2924/186 , H01L2924/3025 , H01L2924/00 , H01L2224/13 , H01L2924/00014 , H01L2924/00012
摘要： An inventive semiconductor device includes a semiconductor chip having a passivation film, and a sealing resin layer provided over the passivation film for sealing a front side of the semiconductor chip. The sealing resin layer extends to a side surface of the passivation film to cover the side surface.

106. 发明授权

US09166132B2 Light-emitting element mounting package having heat radiation route, manufacturing method of the same, and light-emitting element package 有权
标题翻译：具有散热路径的发光元件安装封装，其制造方法和发光元件封装
公开(公告)号：US09166132B2
公开(公告)日：2015-10-20
申请号：US13795253
申请日：2013-03-12
申请人： SHINKO ELECTRIC INDUSTRIES CO., LTD.
发明人： Atsushi Nakamura , Tsukasa Nakanishi , Takayuki Matsumoto
IPC分类号： H01L33/48 , H01L33/64 , H01L33/62 , H05K1/02 , H05K1/11
CPC分类号： H01L33/64 , H01L33/486 , H01L33/62 , H01L33/647 , H01L2224/16 , H05K1/0206 , H05K1/113
摘要： A light-emitting element mounting package including a first wiring forming a first light-emitting element mounting portion, which is provided on one surface of a substrate to mount a light-emitting element, and a first through wiring having one end and another end, the one end being electrically connected to the first light-emitting element mounting portion so as to be thermally transferable, and the other end protruding from another surface of the substrate.
摘要翻译：一种发光元件安装封装，包括：形成第一发光元件安装部的第一布线，其设置在基板的一个表面上以安装发光元件;以及第一布线，其一端和另一端，所述一端电连接到所述第一发光元件安装部，从而可热转印，另一端从所述基板的另一表面突出。

107. 发明授权

US09166070B2 Semiconductor device and method of manufacturing semiconductor device 有权
标题翻译：半导体装置及其制造方法
公开(公告)号：US09166070B2
公开(公告)日：2015-10-20
申请号：US14151028
申请日：2014-01-09
申请人： Sony Corporation
发明人： Tsuyoshi Watanabe
IPC分类号： H01L31/0203 , H01L27/146
CPC分类号： H01L27/14618 , H01L31/0203 , H01L2224/16
摘要： A semiconductor device includes: an organic substrate; an integrated circuit and a chip part provided on the organic substrate; a molded section including a central portion and a peripheral portion, and forming, as a whole, a concave shape, the central portion sealing the integrated circuit and the chip part on the organic substrate, and the peripheral portion standing around the central portion; and a solid-state image pickup element provided on the central portion of the molded section, the solid-state image pickup element having a top edge that is lower in position in a thickness direction than a top edge of the peripheral portion of the molded section.
摘要翻译：半导体器件包括：有机衬底; 设置在有机基板上的集成电路和芯片部分; 包括中心部分和周边部分的模制部分，并且总体上形成凹形，中心部分密封有机基板上的集成电路和芯片部分，以及围绕中心部分的周边部分; 以及设置在模制部分的中心部分上的固态图像拾取元件，所述固态图像拾取元件具有在厚度方向上比所述模制部分的周边部分的顶部边缘更低的位置的顶部边缘。

108. 发明申请

US20150287692A1 THREE DIMENSIONAL DEVICE INTEGRATION METHOD AND INTEGRATED DEVICE 有权
标题翻译：三维设备集成方法和集成设备
公开(公告)号：US20150287692A1
公开(公告)日：2015-10-08
申请号：US14746425
申请日：2015-06-22
申请人： ZIPTRONIX, INC.
发明人： Paul M. ENQUIST , Gaius Gillman FOUNTAIN, JR.
IPC分类号： H01L23/00 , H01L27/06
CPC分类号： H01L24/08 , H01L21/187 , H01L21/2007 , H01L21/6835 , H01L21/76251 , H01L21/76898 , H01L21/8221 , H01L23/13 , H01L23/36 , H01L23/481 , H01L23/5384 , H01L23/5385 , H01L23/5389 , H01L23/552 , H01L24/24 , H01L24/26 , H01L24/27 , H01L24/30 , H01L24/48 , H01L24/80 , H01L24/82 , H01L24/83 , H01L24/94 , H01L25/0652 , H01L25/0655 , H01L25/0657 , H01L25/16 , H01L25/167 , H01L25/18 , H01L25/50 , H01L27/0688 , H01L27/14634 , H01L2221/6835 , H01L2221/68359 , H01L2221/68363 , H01L2223/6677 , H01L2224/0807 , H01L2224/08123 , H01L2224/1134 , H01L2224/16 , H01L2224/24011 , H01L2224/24225 , H01L2224/24226 , H01L2224/24227 , H01L2224/3005 , H01L2224/30104 , H01L2224/305 , H01L2224/48091 , H01L2224/48101 , H01L2224/48227 , H01L2224/48247 , H01L2224/80896 , H01L2224/81894 , H01L2224/8303 , H01L2224/83092 , H01L2224/83099 , H01L2224/8319 , H01L2224/83193 , H01L2224/83345 , H01L2224/83359 , H01L2224/8385 , H01L2224/83894 , H01L2224/83896 , H01L2224/83912 , H01L2224/83948 , H01L2224/9202 , H01L2224/9212 , H01L2225/06513 , H01L2225/06524 , H01L2225/06541 , H01L2225/06555 , H01L2225/06589 , H01L2924/00013 , H01L2924/00014 , H01L2924/01005 , H01L2924/01006 , H01L2924/01015 , H01L2924/01029 , H01L2924/01033 , H01L2924/01047 , H01L2924/01057 , H01L2924/01074 , H01L2924/01082 , H01L2924/0132 , H01L2924/014 , H01L2924/05442 , H01L2924/07802 , H01L2924/10253 , H01L2924/10329 , H01L2924/1305 , H01L2924/13062 , H01L2924/13063 , H01L2924/13064 , H01L2924/13091 , H01L2924/14 , H01L2924/1461 , H01L2924/15153 , H01L2924/15165 , H01L2924/19041 , H01L2924/19043 , H01L2924/30105 , H01L2924/30107 , H01L2924/3011 , H01L2924/3025 , H01L2924/351 , Y10S148/012 , Y10S438/977 , H01L2224/13099 , H01L2924/01049 , H01L2924/01031 , H01L2924/00 , H01L2224/45099 , H01L2224/45015 , H01L2924/207 , H01L2224/8203 , H01L2224/821 , H01L2224/80001 , H01L2224/82
摘要： A device integration method and integrated device. The method may include the steps of directly bonding a semiconductor device having a substrate to an element; and removing a portion of the substrate to expose a remaining portion of the semiconductor device after bonding. The element may include one of a substrate used for thermal spreading, impedance matching or for RF isolation, an antenna, and a matching network comprised of passive elements. A second thermal spreading substrate may be bonded to the remaining portion of the semiconductor device. Interconnections may be made through the first or second substrates. The method may also include bonding a plurality of semiconductor devices to an element, and the element may have recesses in which the semiconductor devices are disposed. A conductor array having a plurality of contact structures may be formed on an exposed surface of the semiconductor device, vias may be formed through the semiconductor device to device regions, and interconnection may be formed between said device regions and said contact structures.
摘要翻译：一种器件集成方法和集成器件。该方法可以包括将具有衬底的半导体器件直接接合到元件的步骤; 以及去除所述衬底的一部分以在结合之后露出所述半导体器件的剩余部分。元件可以包括用于热扩散，阻抗匹配或RF隔离的衬底之一，天线以及由无源元件组成的匹配网络。第二热扩散基板可以结合到半导体器件的其余部分。互连可以通过第一或第二基底进行。该方法还可以包括将多个半导体器件接合到元件，并且元件可以具有设置半导体器件的凹部。具有多个接触结构的导体阵列可以形成在半导体器件的暴露表面上，可以通过半导体器件到器件区域形成通孔，并且可以在所述器件区域和所述接触结构之间形成互连。

109. 发明申请

US20150287688A1 SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF 有权
标题翻译：半导体器件及其制造方法
公开(公告)号：US20150287688A1
公开(公告)日：2015-10-08
申请号：US14440872
申请日：2013-10-30
申请人： NANTONG FUJITSU MICROELECTRONICS CO., LTD.
发明人： Chang-Ming Lin , Lei Shi , Yujuan Tao
IPC分类号： H01L23/00 , H01L23/31
CPC分类号： H01L24/13 , H01L23/3114 , H01L23/3171 , H01L23/3192 , H01L24/03 , H01L24/05 , H01L24/11 , H01L24/16 , H01L24/81 , H01L2224/0345 , H01L2224/03462 , H01L2224/03472 , H01L2224/03618 , H01L2224/0401 , H01L2224/05008 , H01L2224/05011 , H01L2224/05548 , H01L2224/05562 , H01L2224/05567 , H01L2224/05571 , H01L2224/05572 , H01L2224/05655 , H01L2224/1132 , H01L2224/11462 , H01L2224/115 , H01L2224/11849 , H01L2224/13006 , H01L2224/13011 , H01L2224/13014 , H01L2224/13015 , H01L2224/13016 , H01L2224/13017 , H01L2224/13018 , H01L2224/13021 , H01L2224/13023 , H01L2224/13076 , H01L2224/13111 , H01L2224/13147 , H01L2224/16 , H01L2225/06513 , H01L2924/00012
摘要： A semiconductor device and a manufacturing method thereof. The semiconductor device includes a semiconductor substrate (300) provided with a plurality of pads (301), columnar electrodes on the pads (301) and a solder ball (321) provided on the columnar electrode. The columnar electrode comprises a main body (307) and a groove in the main body (307), and an opening of the groove is overlapped with the top surface of the columnar electrode. The solder ball (321) comprises a metal bump (320) arranged on the top of the columnar electrode and a filling part (319) filled in the groove. The solder ball and the columnar electrode form a structure similar to a bolt; thus the binding force between the solder ball and the columnar electrode is improved.
摘要翻译：半导体器件及其制造方法。半导体器件包括设置有多个焊盘（301）的半导体衬底（300），焊盘上的柱状电极（301）和设置在柱状电极上的焊球（321）。柱状电极包括主体（307）和主体（307）中的凹槽，并且凹槽的开口与柱状电极的顶表面重叠。焊球（321）包括布置在柱状电极的顶部上的金属凸块（320）和填充在凹槽中的填充部分（319）。焊球和柱状电极形成类似于螺栓的结构; 因此焊球和柱状电极之间的结合力提高。

110. 发明申请

US20150279755A1 WAFER LEVEL PACKAGE SOLDER BARRIER USED AS VACUUM GETTER 有权
公开(公告)号：US20150279755A1
公开(公告)日：2015-10-01
申请号：US14736042
申请日：2015-06-10
申请人： RAYTHEON COMPANY
发明人： Roland W. Gooch , Buu Q. Diep , Adam M. Kennedy , Stephen H. Black , Thomas A. Kocian
IPC分类号： H01L23/10 , H01L23/26 , H01L21/52
CPC分类号： H01L23/10 , B81B7/0038 , B81B2201/0207 , B81C1/00269 , B81C2203/035 , H01L21/52 , H01L21/76841 , H01L23/26 , H01L23/49866 , H01L27/14618 , H01L27/14634 , H01L27/14636 , H01L27/14683 , H01L27/1469 , H01L2224/16 , H01L2924/0002 , H01L2924/00
摘要： An electronic device and methods of manufacture thereof. One or more methods may include providing a lid wafer having a cavity and a surface surrounding the cavity and a device wafer having a detector device and a reference device. In certain examples, a solder barrier layer of titanium material may be deposited onto the surface of the lid wafer. The solder barrier layer of titanium material may further be activated to function as a getter. In various examples, the lid wafer and the device wafer may be bonded together using solder, and the solder barrier layer of titanium material may prevent the solder from contacting the surface of the lid wafer.

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式