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101. 发明授权

US6057557A Semiconductor substrate semiconductor device and liquid crystal display device 失效
标题翻译：半导体衬底，半导体器件和液晶显示器件
公开(公告)号：US6057557A
公开(公告)日：2000-05-02
申请号：US349076
申请日：1999-07-08
申请人： Takeshi Ichikawa
发明人： Takeshi Ichikawa
IPC分类号： C30B23/02 , H01L21/20 , H01L21/203 , H01L21/306 , H01L29/04
CPC分类号： C30B29/06 , C30B23/002 , C30B23/066 , H01L21/02043 , H01L21/02381 , H01L21/02532 , H01L21/02631 , H01L21/02661
摘要： A method of forming an Si film by a bias sputtering process comprises the steps of generating plasma between a target electrode holding a target material provided in a vacuum container and a substrate electrode holding a deposited film forming substrate, provided opposingly to the target electrode, by the use of a high-frequency energy to cause the target material to undergo sputtering, and applying a bias voltage to at least one of the target electrode and the substrate electrode to form an Si film comprised of atoms deposited by sputtering on the substrate, wherein;a mixed-gas environment comprising a mixture of an inert gas and a hydrogen gas is formed in the vacuum container, and the target material is subjected to sputtering while controlling H.sub.2 O gas, CO gas and CO.sub.2 gas in the mixed-gas environment to have a partial pressure of 1.0.times.10.sup.-8 Torr or less each, to form an epitaxial film on the substrate while maintaining a substrate temperature in the range of from 400.degree. C. to 700.degree. C.A semiconductor substrate comprises an Si layer having a carbon content, a hydrogen content and a rare gas (X) content of C.ltoreq.1.times.10.sup.18 cm.sup.-3, 1.times.10.sup.15 cm.sup.-3 .ltoreq.H.ltoreq.1.times.10.sup.20 cm.sup.-3 and 1.times.10.sup.16 cm.sup.-3 .ltoreq.X, respectively, and having a difference of 15 nm or less between a maximum value and a minimum value of surface roughness.
摘要翻译：通过偏压溅射法形成Si膜的方法包括以下步骤：在设置在真空容器中的目标材料的靶电极和保持沉积膜形成基板的基板电极之间产生等离子体，该基板电极与目标电极相对设置，通过使用高频能量使目标材料进行溅射，并且向目标电极和基板电极中的至少一个施加偏置电压，以形成由在基板上通过溅射沉积的原子构成的Si膜，其中 ; 在真空容器中形成包含惰性气体和氢气的混合气体的混合气体环境，并且在混合气体环境中控制H 2 O气体，CO气体和CO 2气体的同时对靶材进行溅射，以具有分压为1.0×10-8乇或更低，以在衬底上形成外延膜，同时保持衬底温度在400℃至700℃的范围内。半导体衬底包括具有碳含量的Si层，C 1 = 10×10 18 cm -3的氢含量和稀有气体（X）含量分别为1×10 15 cm -3，H 1×10 20 cm -3和1×10 16 cm -3，以及在表面粗糙度的最大值和最小值之间具有15nm以下的差。

102. 发明授权

US6022458A Method of production of a semiconductor substrate 失效
标题翻译：半导体衬底的制造方法
公开(公告)号：US6022458A
公开(公告)日：2000-02-08
申请号：US922644
申请日：1997-09-03
申请人： Takeshi Ichikawa
发明人： Takeshi Ichikawa
IPC分类号： C30B23/02 , H01L21/20 , H01L21/203 , H01L21/306 , C23C14/34
CPC分类号： C30B29/06 , C30B23/002 , C30B23/066 , H01L21/02043 , H01L21/02381 , H01L21/02532 , H01L21/02631 , H01L21/02661
摘要： A method of forming a Si film by a bias sputtering process comprises the steps of generating plasma between a target electrode holding a target material provided in a vacuum container and a substrate electrode holding a deposited film forming substrate, provided opposingly to the target electrode, by the use of a high-frequency energy to cause the target material to undergo sputtering, and applying a bias voltage to at least one of the target electrode and the substrate electrode to form a Si film comprised of atoms deposited by sputtering on the substrate, wherein;a mixed-gas environment comprising a mixture of an inert gas and a hydrogen gas is formed in the vacuum container, and the target material is subjected to sputtering while controlling H.sub.2 O gas, CO gas and CO.sub.2 gas in the mixed-gas environment to have a partial pressure of 1.0.times.10.sup.-8 Torr or less each, to form an epitaxial film on the substrate while maintaining a substrate temperature in the range of from 400.degree. C. to 700.degree. C.A semiconductor substrate comprises an Si layer having a carbon content, a hydrogen content and a rare gas (X) content of C.ltoreq.1.times.10.sup.18 cm.sup.-3, 1.times.10.sup.15 cm.sup.-3 .ltoreq.H.ltoreq.1.times.10.sup.20 cm.sup.-3 and 1.times.10.sup.16 cm.sup.-3 .ltoreq.X, respectively, and having a difference of 15 nm or less between a maximum value and a minimum value of surface roughness.
摘要翻译：通过偏置溅射法形成Si膜的方法包括以下步骤：在保持设置在真空容器中的目标材料的靶电极和保持沉积膜形成基板的基板电极之间产生等离子体，该基板电极与目标电极相对设置，通过使用高频能量使目标材料进行溅射，并将偏置电压施加到目标电极和基板电极中的至少一个，以形成由在基板上通过溅射沉积的原子构成的Si膜，其中 ; 在真空容器中形成包含惰性气体和氢气的混合气体的混合气体环境，并且在混合气体环境中控制H 2 O气体，CO气体和CO 2气体的同时对靶材进行溅射，以具有分压为1.0×10-8乇或更低，以在衬底上形成外延膜，同时保持衬底温度在400℃至700℃的范围内。半导体衬底包括具有碳含量的Si层，C 1 = 10×10 18 cm -3的氢含量和稀有气体（X）含量分别为1×10 15 cm -3，H 1×10 20 cm -3和1×10 16 cm -3，以及在表面粗糙度的最大值和最小值之间具有15nm以下的差。

103. 发明授权

US6011904A Molecular beam epitaxy effusion cell 失效
标题翻译：分子束外延注射细胞
公开(公告)号：US6011904A
公开(公告)日：2000-01-04
申请号：US872758
申请日：1997-06-10
申请人： Terry J. Mattord
发明人： Terry J. Mattord
IPC分类号： C30B23/06 , C23C14/00
CPC分类号： C30B23/066
摘要： A molecular beam epitaxy effusion cell for growing epitaxial layers upon a semiconductor substrate by control of a collimated beam of molecules generated from a source material in a high vacuum environment in order to control the hyper abrupt stoichiometry of the effusion flux. A heated control assembly is used to control the size of the exit openings of the effusion cell. The control assembly comprises a boroelectric heating member such as a grating having a plurality of holes and a perforated cover which are adjustable relative to one another. The grating includes an internal heating element.
摘要翻译：一种用于在半导体衬底上生长外延层的分子束外延注入单元，用于通过控制在高真空环境中从源材料产生的准直的分子束来控制渗透通量的超突变化学计量。加热控制组件用于控制渗出池的出口的尺寸。控制组件包括诸如具有多个孔的光栅的硼电加热构件和可相对于彼此调节的多孔盖。光栅包括内部加热元件。

104. 发明授权

US5558720A Rapid response vapor source 失效
标题翻译：快速反应蒸气源
公开(公告)号：US5558720A
公开(公告)日：1996-09-24
申请号：US584288
申请日：1996-01-11
申请人： David B. Sarraf , David L. Miller
发明人： David B. Sarraf , David L. Miller
IPC分类号： C23C14/24 , C30B23/06 , C23C14/00
CPC分类号： C30B23/066 , C23C14/243
摘要： The apparatus is a rapid response evaporator for material deposition in vapor. The structure is a vessel which is heated to a temperature just above the melting temperature of the liquid which it contains. Inserted into the heated liquid is a funnel shaped evaporator structure in which the vertical tube is a capillary structure to raise the heated liquid from the vessel. The upper diverging portion of the evaporator contains a porous capillary interior coating in contact with the capillary tube, and the exterior is independently heated. Because of the low thermal mass of the upper portion of the evaporator and the liquid in its capillary structure, it can respond to heat changes quickly enough to rapidly vary the rate of evaporation and the thickness of the deposited coating.
摘要翻译：该装置是用于蒸气中物质沉积的快速响应蒸发器。该结构是一种容器，其被加热到刚好高于其含有的液体的熔融温度的温度。插入加热液体中的是漏斗形蒸发器结构，其中垂直管是毛细管结构，以使来自容器的加热液体升高。蒸发器的上部分歧部分包含与毛细管接触的多孔毛细管内部涂层，并且外部被独立加热。由于蒸发器上部的热质量低，其毛细结构中的液体的热质量低，因此可快速响应热变化，从而快速地改变蒸发速率和沉积涂层的厚度。

105. 发明授权

US5431735A Phosphorus effusion cell for molecular beam epitaxy 失效
标题翻译：用于分子束外延的磷积液细胞
公开(公告)号：US5431735A
公开(公告)日：1995-07-11
申请号：US181802
申请日：1994-01-14
申请人： Fernando F. Briones
发明人： Fernando F. Briones
IPC分类号： C23C14/24 , C30B23/06 , C23C16/00
CPC分类号： C23C14/243 , C23C14/24 , C30B23/066
摘要： A phosphorus effusion cell for molecular beam epitaxy is disclosed. It consists of a vessel in which, by sublimation of red phosphorus, the vapor of this element is produced, the vessel being closed by means of a vacuum tight valve which regulates its flow. In the vessel, there are two zones having different temperatures, one of sublimation of red phosphorus and another of condensation and re-evaporation of white phosphorus, both zones being thermally insulated by means of reflecting screens which prevent the temperature of the heating resistance from having to reach temperatures above 350.degree. C. The valve, intermittent closing of which regulates the effusion of phosphorus vapor, is at a temperature slightly above that of the thermostated zone of condensation/re-evaporation of the white phosphorus. It finds applicable in the manufacture of semiconducting structures.
摘要翻译：公开了一种用于分子束外延的磷积液单元。它由一个容器组成，通过红磷的升华，产生该元素的蒸气，容器通过调节其流动的真空密封阀封闭。在容器中，存在两个具有不同温度的区域，其中一个是红磷升华，另一个是白磷的冷凝和再蒸发，两个区域通过反射屏蔽层进行绝热，防止加热阻力的温度具有达到高于350℃的温度。调节磷蒸汽渗出的阀门间歇关闭温度略高于白磷冷凝/再蒸发恒温区的温度。它适用于半导体结构的制造。

106. 发明授权

US5171370A Effusion cell of a molecular beam epitaxy system 失效
标题翻译：分子束外延系统的影响细胞
公开(公告)号：US5171370A
公开(公告)日：1992-12-15
申请号：US510517
申请日：1990-04-18
申请人： Johann-Peter Reithmaier , Heinrich Schloetterer
发明人： Johann-Peter Reithmaier , Heinrich Schloetterer
IPC分类号： C30B23/08 , C30B23/06 , H01L21/203
CPC分类号： C30B23/066
摘要： An apparatus with a crucible in an effusion cell of a molecular beam epitaxy system provides the crucible shaped and mounted in such a way that the molecular beam is optimized relative to the substrate. In particular, when a circular substrate is tilted relative to the beam direction, the shape of the crucible, of the crucible mount, and the alignment of the center axis of the crucible relative to the center axis of the cell are adapted to optimize the beam impingement on the substrate.
摘要翻译：具有分子束外延系统的渗流池中的坩埚的装置提供了以相对于衬底优化分子束的方式成形和安装的坩埚。特别地，当圆形基片相对于光束方向倾斜时，坩埚，坩埚安装件的形状以及坩埚的中心轴线相对于电池单元的中心轴线的对准适于使光束撞击在基板上。

107. 发明授权

US4856457A Cluster source for nonvolatile species, having independent temperature control 失效
标题翻译：用于非挥发性物质的聚簇源，具有独立的温度控制
公开(公告)号：US4856457A
公开(公告)日：1989-08-15
申请号：US17389
申请日：1987-02-20
申请人： Wolfgang Knauer
发明人： Wolfgang Knauer
IPC分类号： C23C14/24 , C30B23/06
CPC分类号： C30B23/066 , C23C14/243
摘要： A cluster source includes at least two separate zones, each of whose temperatures can be independently controlled. A crucible contains the species to be evaporated, and is heated to a sufficiently high temperature that efficient evaporation is achieved. A cluster formation surface is adjacent to the crucible and receives evaporated atoms from the crucible. Clusters are produced at the cluster formation surface from the evaporated atoms, and the cluster formation surface is maintained at a temperature lower than that of the crucible to encourage good formation efficiency. Optionally, a third zone can be provided for ejection of the clusters, which is maintained at a higher temperature than the cluster formation surface to prevent formation of droplets of the evaporant.
摘要翻译：簇源包括至少两个分开的区域，每个区域的温度可独立控制。坩埚含有要蒸发的物质，并被加热到足够高的温度，从而实现有效的蒸发。簇形成表面邻近坩埚并从坩埚中接收蒸发的原子。从蒸发的原子在簇形成表面产生簇，并且簇形成表面保持在低于坩埚的温度的温度，以促进良好的生成效率。可选地，可以提供第三区域用于喷射簇，其保持在比簇形成表面更高的温度以防止形成蒸发剂的液滴。

108. 发明授权

US4854264A Vacuum evaporating apparatus 失效
标题翻译：真空蒸发装置
公开(公告)号：US4854264A
公开(公告)日：1989-08-08
申请号：US131009
申请日：1987-12-10
申请人： Hiroshi Noma , Hiroshi Fujiyasu
发明人： Hiroshi Noma , Hiroshi Fujiyasu
IPC分类号： C23C14/56 , C30B23/06
CPC分类号： C23C14/56 , C30B23/066
摘要： An vacuum evaporating apparatus for depositing thin films on a substrate comprises a vacuum tank, a hot-wall furnace for heating and evaporating a material to be evaporated, an auxiliary vacuuming means connected to the vacuum tank through a gate valve, a substrate exchanging mechanism for an evaporated substrate with a new substrate through the auxiliary vacuuming device, and a substrate transferring unit generally of a turn table located to be rotatable above the hot-wall furnace. The hot-wall furnaces are disposed in standing state in the vacuum tank, each of hot-wall furnaces being provided with a plurality of crucibles coaxial in a vertical direction in which the evaporation source materials are accommodated, heaters independently provided for the respective crucibles, and thermocouples connected to the respective heaters to independently control the temperatures of the respective crucibles. The thermocouples are operatively connected to socket pins, at the bottom of the hot-wall furnace, and are made of the same materials as those constituting metal portions of the respective thermocouples.
摘要翻译：用于在基板上沉积薄膜的真空蒸发装置包括：真空槽，用于加热和蒸发待蒸发的材料的热壁炉，通过闸阀连接到真空罐的辅助抽真空装置，用于具有通过辅助抽吸装置的新基板的蒸发的基板，以及通常位于可在热壁炉上方旋转的转台的基板传送单元。所述热壁炉在所述真空槽中处于静止状态，每个所述热壁炉均设置有多个坩埚，所述坩埚沿垂直方向与所述蒸发源材料相容，所述坩埚独立地设置于所述坩埚中，以及连接到相应加热器的热电偶以独立地控制相应坩埚的温度。热电偶在热壁炉的底部可操作地连接到插座销，并且由与各个热电偶的金属部分相同的材料制成。

109. 发明授权

US4606296A Evaporation cell for a liquid compound suitable for epitaxy by molecular jets 失效
标题翻译：适用于分子射流外延的液体化合物的蒸发池
公开(公告)号：US4606296A
公开(公告)日：1986-08-19
申请号：US714955
申请日：1985-03-22
申请人： Jean P. Gailliard , Alain Million , Jean Piaquet
发明人： Jean P. Gailliard , Alain Million , Jean Piaquet
IPC分类号： C30B23/08 , C23C14/24 , C30B23/06 , H01L21/203 , C23C16/00
CPC分类号： C23C14/246 , C30B23/066
摘要： Evaporation cell for a liquid compound suitable for molecular jet epitaxy on a substrate from a compound which is liquid at ambient temperature and which comprises in per se known manner a cell containing said liquid compound in a main ultravacuum enclosure, the cell being provided with heating means. It comprises a preliminary vacuum enclosure tightly connected to the main enclosure and having a first opening provided with a valve and a pipe for forming and regulating the preliminary vacuum in the preliminary vacuum enclosure, an upwardly oriented second opening linked with a chamber containing a large free surface area reservoir for receiving a liquid compound stock, as well as a third downwardly oriented opening linked with a disassemblable reservoir for emptying the liquid compound, while in the preliminary vacuum enclosure is provided a three-way cock connecting the cell containing the liquid compound either to the large surface reservoir, or to the disassemblable reservoir.
摘要翻译：用于液体化合物的蒸发池，其适用于在环境温度下为液体的化合物在基材上的分子射流外延，并且以本身已知的方式包含在主超真空外壳中含有所述液体化合物的电池，所述电池具有加热装置。它包括紧密连接到主外壳的初级真空外壳，并具有设置有阀的第一开口和用于在预备真空外壳中形成和调节初步真空的管道，向上定向的第二开口，其与包含大的自由用于接收液体复合材料的表面积贮存器以及与用于排空液体化合物的可拆卸储存器连接的第三向下定向的开口，而在初步真空封壳中设置有连接包含液体化合物的电池的三通阀到大面积的储层，或到可拆卸的储层。

110. 发明授权

US4550411A Sources used in molecular beam epitaxy 失效
标题翻译：用于分子束外延的源
公开(公告)号：US4550411A
公开(公告)日：1985-10-29
申请号：US502628
申请日：1983-06-09
申请人： Paul R. Stonestreet , David Williams , Kenneth Anderson , Peter J. L. Butcher
发明人： Paul R. Stonestreet , David Williams , Kenneth Anderson , Peter J. L. Butcher
IPC分类号： C30B23/06 , H05B3/02
CPC分类号： C30B23/066
摘要： A molecular or atomic beam source for use in molecular beam epitaxy comprises a hollow cylindrical crucible, preferably made of boron nitride, which is heated by an electric current passed through a plurality of very thin elongate metal strips disposed outside of and spaced apart from said crucible and mounted parallel to its axis. In order to maintain the strips in the correct position irrespective of temperature, they may be mounted on springs at each end, but preferably they are made in self supporting pairs linked at the open end of the crucible and mounted on brackets at the other end. The thin strips can be made self supporting by folding along lines parallel to their long axis in a variety of ways. They are arranged to present a large surface area to the crucible which ensures efficient heating and increases the maximum operating temperature of the source. The links between strips at the open end of the crucible can be made from the same material as the strips so that they provide additional heat at the open end of the crucible. This allows the crucible to be operated at higher temperatures than conventional sources and permits higher intensity molecular beams to be produced with true Knusden type evaporation. Therefore the source can also be used to produce beams from high melting point materials such as iron and silicon, as well as more usual materials such as galium, arsenic and phosphorus.
摘要翻译：用于分子束外延的分子或原子束源包括优选由氮化硼制成的中空圆柱形坩埚，其由通过多个非常薄的细长金属条的电流加热，所述细长金属条布置在所述坩埚之外并与所述坩埚间隔开并平行于其轴线安装。为了将条带保持在正确的位置而不管温度如何，它们可以安装在每个端部的弹簧上，但是优选地，它们被制成在坩埚的开口端处连接的自支撑对，并且在另一端安装在支架上。通过以各种方式沿平行于其长轴的线折叠，可以使细条自我支撑。它们被布置为向坩埚呈现大的表面积，这确保了有效的加热并且增加了源的最大工作温度。在坩埚的开口端处的条带之间的连接可以由与条状物相同的材料制成，使得它们在坩埚的开口端提供额外的热量。这允许坩埚在比常规源更高的温度下操作，并且允许使用真正的Knusden型蒸发来产生更高强度的分子束。因此，源也可以用于从诸如铁和硅的高熔点材料以及更常见的材料如镓，砷和磷生产束。

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