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101. 发明申请

US20090026496A1 METHODS OF MAKING SUBSTITUTIONALLY CARBON-DOPED CRYSTALLINE SI-CONTAINING MATERIALS BY CHEMICAL VAPOR DEPOSITION 有权
标题翻译：通过化学蒸气沉积制备替代碳掺杂的含Cr的材料的方法
公开(公告)号：US20090026496A1
公开(公告)日：2009-01-29
申请号：US12244724
申请日：2008-10-02
申请人： Matthias Bauer , Keith Doran Weeks , Pierre Tomasini , Nyles Cody
发明人： Matthias Bauer , Keith Doran Weeks , Pierre Tomasini , Nyles Cody
IPC分类号： H01L29/737 , B32B5/00 , B32B9/00 , C01B31/36
CPC分类号： H01L29/7848 , C23C16/04 , C23C16/22 , C23C16/24 , C23C16/32 , C23C16/325 , C23C16/45512 , C30B25/02 , C30B29/06 , H01L21/02381 , H01L21/02529 , H01L21/02532 , H01L21/02576 , H01L21/02579 , H01L21/0262 , H01L21/02636 , H01L21/02639 , H01L21/32056 , H01L21/3215 , H01L29/165 , H01L29/66628 , H01L29/66636 , H01L29/7834
摘要： Methods of making Si-containing films that contain relatively high levels of substitutional dopants involve chemical vapor deposition using trisilane and a dopant precursor. Extremely high levels of substitutional incorporation may be obtained, including crystalline silicon films that contain 2.4 atomic % or greater substitutional carbon. Substitutionally doped Si-containing films may be selectively deposited onto the crystalline surfaces of mixed substrates by introducing an etchant gas during deposition.
摘要翻译：含有相对高含量的取代掺杂剂的含Si膜的方法涉及使用丙硅烷和掺杂剂前体的化学气相沉积。可以获得非常高的取代掺入水平，包括含有2.4原子％或更高取代碳的晶体硅膜。通过在沉积期间引入蚀刻剂气体，可将选择性地掺杂的含Si薄膜选择性地沉积在混合基板的晶体表面上。

102. 发明申请

US20080289570A1 Process for Producing Silicon Carbide Single Crystal 有权
标题翻译：生产碳化硅单晶的工艺
公开(公告)号：US20080289570A1
公开(公告)日：2008-11-27
申请号：US11886065
申请日：2006-05-23
申请人： Takamitsu Kawahara , Kuniaki Yagi , Naoki Hatta , Hiroyuki Nagasawa
发明人： Takamitsu Kawahara , Kuniaki Yagi , Naoki Hatta , Hiroyuki Nagasawa
IPC分类号： C30B23/02
CPC分类号： C30B29/36 , C23C16/325 , C23C16/45525 , C30B23/02 , C30B25/02 , C30B25/18
摘要： This invention reduces planar defects which occur within a silicon carbide single crystal when a silicon carbide single crystal is epitaxially grown on a single crystal substrate.The process for producing a silicon carbide single crystal in which a silicon carbide single crystal layer is epitaxially grown on the surface of a single crystal substrate is a process in which a plurality of undulations that extend in a single, substantially parallel direction on the substrate surface is formed on the single crystal substrate surface; undulation ridges on the single crystal substrate undulate in the thickness direction of the single crystal substrate; and the undulations are disposed so that planar defects composed of anti-phase boundaries and/or twin bands that propagate together with the epitaxial growth of the silicon carbide single crystal merge with each other.
摘要翻译：本发明减少了在单晶衬底上外延生长碳化硅单晶时在碳化硅单晶中发生的平面缺陷。在单晶基板的表面上外延生长碳化硅单晶层的碳化硅单晶的制造方法是在基板表面上沿单个大致平行的方向延伸的多个起伏形成在单晶基板表面上; 单晶基板上的起伏脊在单晶基板的厚度方向上波动; 并且布置波纹，使得由与碳化硅单晶的外延生长一起传播的反相边界和/或双带组成的平面缺陷彼此合并。

103. 发明授权

US07438884B2 Silicon carbide with high thermal conductivity 有权
标题翻译：具有高导热性的碳化硅
公开(公告)号：US07438884B2
公开(公告)日：2008-10-21
申请号：US10909667
申请日：2004-08-02
申请人： Nathaniel E. Brese , Jitendra S. Goela , Michael A. Pickering
发明人： Nathaniel E. Brese , Jitendra S. Goela , Michael A. Pickering
IPC分类号： C01B31/36
CPC分类号： C23C16/325 , C04B35/565
摘要： A chemical vapor deposited, β phase polycrystalline silicon carbide having a high thermal conductivity and reduced stacking faults. The silicon carbide is synthesized under specific conditions using hydrogen gas and methyltrichlorosilane gas as reactants. The thermal conductivity of the silicon carbide is sufficiently high such that it can be employed as parts of apparatus and components of electrical devices where a high heat load is generated. Such components may include active thermoelectric coolers, heat sinks and fans.
摘要翻译：化学气相沉积，β相多晶碳化硅具有高导热性和减少堆垛层错。使用氢气和甲基三氯硅烷气体作为反应物，在特定条件下合成碳化硅。碳化硅的热导率足够高，使得其可以用作产生高热负荷的电气装置的装置和部件的部件。这些组件可以包括有源热电冷却器，散热器和风扇。

104. 发明申请

US20080251926A1 Method of Fabricating Organic Silicon Film, Semiconductor Device Including the Same, and Method of Fabricating the Semiconductor Device 有权
标题翻译：制造有机硅膜的方法，包括其的半导体器件以及制造半导体器件的方法
公开(公告)号：US20080251926A1
公开(公告)日：2008-10-16
申请号：US11884713
申请日：2006-02-14
申请人： Munehiro Tada , Tsuneo Takeuchi , Yoshihiro Hayashi
发明人： Munehiro Tada , Tsuneo Takeuchi , Yoshihiro Hayashi
IPC分类号： H01L23/532 , C08J7/18 , H01L21/768
CPC分类号： H01L21/3121 , B05D1/62 , C09D4/00 , C23C16/325 , C23C16/401 , H01L21/02167 , H01L21/02211 , H01L21/02274 , H01L21/3148 , H01L21/76801 , C08G77/04
摘要： An organic silicon film is formed by carrying out chemical vapor deposition with organic silicon compound being used as a raw material gas. The organic silicon compound contains at least silicon, hydrogen and carbon as a constituent thereof, and contains two or more groups having unsaturated bond, per a molecule thereof. The organic silicon compound is used in mixture with a silicon hydride gas.
摘要翻译：通过用有机硅化合物作为原料气体进行化学气相沉积形成有机硅膜。有机硅化合物至少含有硅，氢和碳作为其成分，并且每分子含有两个以上具有不饱和键的基团。有机硅化合物与氢化硅气体混合使用。

105. 发明授权

US07420275B1 Boron-doped SIC copper diffusion barrier films 有权
标题翻译：硼掺杂SIC铜扩散阻挡膜
公开(公告)号：US07420275B1
公开(公告)日：2008-09-02
申请号：US11373847
申请日：2006-03-08
申请人： Yongsik Yu , Atul Gupta , Karen Billington , Michael Carris , William Crew , Thomas W. Mountsier
发明人： Yongsik Yu , Atul Gupta , Karen Billington , Michael Carris , William Crew , Thomas W. Mountsier
IPC分类号： H01L23/48 , H01L23/52 , H01L29/40
CPC分类号： H01L21/02126 , C23C16/30 , C23C16/325 , H01L21/02274 , H01L21/3148 , H01L21/76832 , H01L21/76834
摘要： Copper diffusion barrier films having a boron-doped silicon carbide layer with at least 25% boron by atomic weight of the layer composition have advantages for semiconductor device integration schemes. The films have an integration worthy etch selectivity to carbon doped oxide of at least 10 to 1, can adhere to copper with an adhesion energy of at least 20 J/m2, and can maintain an effective dielectric constant of less than 4.5 in the presence of atmospheric moisture. The films are suitable for use in a wide range of VLSI and ULSI structures and devices.
摘要翻译：具有硼掺杂碳化硅层的铜扩散阻挡膜具有至少25％硼原子量的层组成，具有半导体器件集成方案的优点。这些膜具有至少10比1的对碳掺杂氧化物的积分值的蚀刻选择性，可以以至少20J / m 2的粘附能力粘附到铜上，并且可以保持有效的介电常数在大气湿度的情况下小于4.5。这些电影适用于广泛的VLSI和ULSI结构和设备。

106. 发明授权

US07404858B2 Method for epitaxial growth of silicon carbide 有权
标题翻译：碳化硅外延生长方法
公开(公告)号：US07404858B2
公开(公告)日：2008-07-29
申请号：US11521869
申请日：2006-09-15
申请人： Yaroslav Koshka
发明人： Yaroslav Koshka
IPC分类号： C30B25/12
CPC分类号： C30B25/02 , C23C16/325 , C30B29/36
摘要： A method for epitaxial growth of silicon carbide using chemical vapor deposition (CVD) is provided. This method utilizes halogenated carbon precursors and control of the gas-phase interaction of halogen-containing intermediate chemical products involving silicon and carbon, which ensures quality and homogeneity across the silicon carbide crystals. It also ensures a possibility to achieve device-quality epitaxial layers at lower growth temperatures as well as on on-axis or low off-angle substrate surfaces. The growth method can be applied to forming SiC device regions of desirable shape and dimensions by restricting the growth into windows formed in non-silicon carbide region on the top of SiC substrate. Application of the methods described herein will greatly benefit the production of high quality silicon carbide materials and devices.
摘要翻译：提供了一种使用化学气相沉积（CVD）进行外延生长的碳化硅的方法。该方法利用卤代碳前体和控制涉及硅和碳的含卤素中间体化学产品的气相相互作用，确保碳化硅晶体之间的质量和均匀性。它还确保了在较低生长温度以及在轴上或低偏角基板表面上实现器件质量外延层的可能性。通过将生长方法限制在SiC衬底顶部的非碳化硅区域中形成的窗口，可以将生长方法应用于形成所需形状和尺寸的SiC器件区域。本文描述的方法的应用将极大地有利于生产高质量的碳化硅材料和器件。

107. 发明授权

US07396563B2 Ceramic thin film on various substrates, and process for producing same 失效
标题翻译：各种基材上的陶瓷薄膜及其制造方法
公开(公告)号：US07396563B2
公开(公告)日：2008-07-08
申请号：US10515450
申请日：2003-05-23
申请人： Mihai Scarlete , Cetin Aktik
发明人： Mihai Scarlete , Cetin Aktik
IPC分类号： C23C16/00 , C23C16/22
CPC分类号： C23C16/46 , C23C16/325 , Y10T428/265 , Y10T428/31504
摘要： The process of Polymer Assisted Chemical Vapor Deposition (PACVD) and the semiconductor, dielectric, passivating or protecting thin films produced by the process are described. A semiconductor thin film of amorphous silicon carbide is obtained through vapor deposition following desublimation of pyrolysis products of polymeric precursors in inert or active atmosphere. PA-CVD allows one or multi-layers compositions, microstructures and thicknesses to be deposited on a wide variety of substrates. The deposited thin film from desublimation is an n-type semiconductor with a low donor concentration in the range of 1014-1017 cm−3. Many devices can be fabricated by the PA-CVD method of the invention such as; solar cells; light-emitting diodes; transistors; photothyristors, as well as integrated monolithic devices on a single chip. Using this novel technique, high deposition rates can be obtained from chemically synchronized Si—C bonds redistribution in organo-polysilanes in the temperature range of about 200-450° C.
摘要翻译：描述了聚合物辅助化学气相沉积（PACVD）的过程以及由该方法生产的半导体，电介质，钝化或保护薄膜。非晶碳化硅的半导体薄膜通过气相淀积获得，在惰性或活性气氛中，将聚合物前体的热解产物描述出来。 PA-CVD允许将一层或多层组合物，微结构和厚度沉积在各种基材上。淀积的沉积薄膜是一种n型半导体，具有低的供体浓度，范围为10〜14℃至3±3℃，。许多器件可以通过本发明的PA-CVD法制造，例如：太阳能电池; 发光二极管; 晶体管光电晶体管，以及单个芯片上的集成单片设备。使用这种新技术，可以在约200-450℃的温度范围内从有机聚硅烷中的化学同步Si-C键再分布获得高沉积速率。

108. 发明申请

US20080053371A1 Silicon carbide manufacturing device and method of manufacturing silicon carbide 有权
标题翻译：碳化硅制造装置及其制造方法
公开(公告)号：US20080053371A1
公开(公告)日：2008-03-06
申请号：US11896504
申请日：2007-09-04
申请人： Masao Nagakubo , Fusao Hirose , Yasuo Kitoh
发明人： Masao Nagakubo , Fusao Hirose , Yasuo Kitoh
IPC分类号： C30B25/08 , C30B28/12
CPC分类号： C30B29/36 , C23C16/325 , C23C16/45578 , C30B25/12 , C30B25/14 , C30B25/165 , Y10T117/10
摘要： A silicon carbide manufacturing device includes a graphite crucible, in which a seed crystal is disposed, a gas-inducing pipe coupled with the graphite crucible, and an attachment prevention apparatus. The gas-inducing pipe has a column-shaped hollow part, through which a source gas flows into the graphite crucible. The attachment prevention apparatus includes a rod extending to a flow direction of the source gas, and a revolving and rotating element for revolving the rod along an inner wall of the gas-inducing pipe while rotating the rod on an axis of the rod in parallel to the flow direction.
摘要翻译：碳化硅制造装置包括其中设置有晶种的石墨坩埚，与石墨坩埚连接的气体诱导管，以及附着防止装置。气体诱导管具有柱状中空部，源气体通过该中空部流入石墨坩埚。附着防止装置包括延伸到源气体的流动方向的杆，以及用于沿着气体诱导管的内壁旋转杆的旋转和旋转元件，同时沿杆的轴线平行地旋转杆流动方向。

109. 发明申请

US20070184656A1 GCIB Cluster Tool Apparatus and Method of Operation 审中-公开
标题翻译： GCIB集群工具装置及操作方法
公开(公告)号：US20070184656A1
公开(公告)日：2007-08-09
申请号：US11671860
申请日：2007-02-06
申请人： Steven Sherman , Arthur Learn , Robert Geffken , John Hautala
发明人： Steven Sherman , Arthur Learn , Robert Geffken , John Hautala
IPC分类号： H01L21/44
CPC分类号： H01L21/32136 , C23C14/0605 , C23C14/0635 , C23C14/0652 , C23C14/221 , C23C16/26 , C23C16/325 , C23C16/345 , C23C16/513 , H01J2237/0812 , H01L21/02074 , H01L21/02301 , H01L21/02304 , H01L21/321 , H01L21/67207 , H01L21/76801 , H01L21/76822 , H01L21/76825 , H01L21/76832 , H01L21/76834 , H01L21/76843 , H01L21/76846 , H01L21/76849 , H01L21/76865 , H01L21/76867 , H01L21/76883 , H01L21/76886
摘要： A wafer processing cluster tool and method of operation provides one or more gas cluster ion beam processing chambers in possible combination with a deposition chamber and/or a cleaning chamber for performing sequential processing steps including, GCIB processing in a reduced pressure atmosphere.
摘要翻译：晶片处理集群工具和操作方法提供与沉积室和/或清洁室可能组合的一个或多个气体簇离子束处理室，用于执行包括在减压气氛中的GCIB处理的顺序处理步骤。

110. 发明授权

US07247513B2 Dissociation of silicon clusters in a gas phase during chemical vapor deposition homo-epitaxial growth of silicon carbide 有权
标题翻译：化学气相沉积同时外延生长碳化硅期间气相中硅团的分离
公开(公告)号：US07247513B2
公开(公告)日：2007-07-24
申请号：US10431819
申请日：2003-05-08
申请人： Olof Claes Erik Kordina
发明人： Olof Claes Erik Kordina
IPC分类号： H01L21/04
CPC分类号： C30B29/36 , C23C16/325 , C23C16/455 , C30B25/02 , H01L21/02529 , H01L21/0262 , Y10S438/931
摘要： A method of forming a layer of silicon carbide wherein silicon clusters are dissociated in a gas phase. Silicon clusters may be dissociated by a silicon-etching gas such as a group VII-containing component. A semiconductor device is also disclosed having a layer formed by the methods of the invention.
摘要翻译：一种形成碳化硅层的方法，其中硅簇在气相中解离。硅簇可以通过诸如含Ⅶ族组分的硅蚀刻气体解离。还公开了具有通过本发明的方法形成的层的半导体器件。

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