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    • 108. 发明申请
    • AMORPHOUS DIELECTRIC FILM AND ELECTRONIC COMPONENT
    • 非晶电介质膜和电子元件
    • US20140378295A1
    • 2014-12-25
    • US14310212
    • 2014-06-20
    • TDK Corporation
    • Toshihiko KANEKOSaori TAKEDAYuki YAMASHITAJunichi YAMAZAKI
    • C04B35/057C04B35/465C04B35/49
    • C04B35/49C04B2235/3208C04B2235/3213C04B2235/3215C04B2235/6562H01L28/40
    • The present invention aims to provide an amorphous dielectric film and an electronic component in which the relative permittivity and the temperature coefficient of electrostatic capacitance can be maintained and the withstand voltage can be increased even if the dielectric film is further thinned. The amorphous dielectric film of the present invention is characterized in that it is a dielectric film composed of an amorphous composition with A-B—O as the main component, wherein A contains at least two elements selected from the group consisting of Ba, Ca and Sr, and B contains Zr. When the main component of the dielectric film is represented by (BaxCaySrz)α—B—O, x, y and z meet the conditions of 0≦x≦1, 0≦y≦1, 0≦z≦1, respectively, x+y+z=1 and at least any two of x, y and z are 0.1 or more. When A/B is represented by α, 0.5≦α≦1.5.
    • 本发明的目的在于提供一种非晶介质膜和电子元件,其中可以保持相对介电常数和静电电容的温度系数,并且即使电介质膜进一步薄化也可以提高耐电压。 本发明的非晶质介电体膜的特征在于,由作为主成分的无定形组合物构成的电介质膜,其中,A含有选自Ba,Ca,Sr中的至少2种以上的元素, B含有Zr。 当电介质膜的主要成分由(BaxCaySrz)α-B-O表示时,x,y和z分别满足0≦̸ x≦̸ 1,0,nlE; y≦̸ 1,0和nlE; z≦̸ 1的条件x + y + z = 1,x,y和z中的至少任意两个为0.1以上。 当A / B由α表示时,0.5≦̸α≦̸ 1.5。