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101. 发明授权

US07553433B2 Aerosol method and apparatus, particulate products, and electronic devices made therefrom 有权
标题翻译：气溶胶方法和装置，颗粒产品和由其制成的电子装置
公开(公告)号：US07553433B2
公开(公告)日：2009-06-30
申请号：US11676459
申请日：2007-02-19
申请人： Mark J. Hampden-Smith , Toivo T. Kodas , Quint H. Powell , Daniel J. Skamser , James Caruso , Clive D. Chandler
发明人： Mark J. Hampden-Smith , Toivo T. Kodas , Quint H. Powell , Daniel J. Skamser , James Caruso , Clive D. Chandler
IPC分类号： B29B9/00
CPC分类号： B01J2/003 , B01J2/006 , B01J2/02 , B01J2/04 , B01J13/02 , B01J19/10 , B01J19/2405 , B01J2219/00112 , B01J2219/00155 , B01J2219/00159 , B01J2219/00162 , B01J2219/00166 , B01J2219/00171 , B01J2219/00186 , B22F1/0018 , B22F1/02 , B22F1/025 , B22F9/02 , B22F9/026 , B22F9/24 , B22F9/30 , B22F2998/00 , B22F2999/00 , B24B37/044 , B82Y30/00 , C01B13/18 , C01B13/185 , C01B17/20 , C01G15/006 , C01G23/003 , C01G23/006 , C01G25/00 , C01P2002/60 , C01P2002/70 , C01P2004/03 , C01P2004/32 , C01P2004/34 , C01P2004/50 , C01P2004/52 , C01P2004/61 , C01P2004/62 , C01P2004/80 , C01P2006/10 , C01P2006/22 , C01P2006/60 , C01P2006/80 , C09G1/02 , C09K3/1436 , C09K3/1463 , C09K11/025 , C09K11/0805 , C09K11/0877 , C09K11/562 , C09K11/565 , C09K11/567 , C09K11/584 , C09K11/595 , C09K11/623 , C09K11/625 , C09K11/642 , C09K11/643 , C09K11/644 , C09K11/662 , C09K11/666 , C09K11/671 , C09K11/672 , C09K11/7701 , C09K11/7708 , C09K11/7718 , C09K11/7729 , C09K11/7731 , C09K11/7734 , C09K11/7746 , C09K11/7769 , C09K11/7771 , C09K11/7774 , C09K11/7776 , C09K11/7784 , C09K11/7786 , C09K11/7787 , C09K11/7789 , C09K11/7797 , C22C1/1026 , C22C32/0089 , H01G4/0085 , H01J29/20 , H01L21/3212 , H01L23/49883 , H01L2924/0002 , H01L2924/09701 , Y10T428/12007 , Y10T428/12014 , Y10T428/12056 , Y10T428/1216 , Y10T428/12181 , Y10T428/256 , Y10T428/2982 , Y10T428/2991 , B22F1/0014 , B22F1/0048 , B22F2202/01 , B22F3/008 , B22F2202/11 , H01L2924/00
摘要： Provided is an aerosol method, and accompanying apparatus, for preparing powdered products of a variety of materials involving the use of an ultrasonic aerosol generator (106) including a plurality of ultrasonic transducers (120) underlying and ultrasonically energizing a reservoir of liquid feed (102) which forms droplets of the aerosol. Carrier gas (104) is delivered to different portions of the reservoir by a plurality of gas delivery ports (136) delivering gas from a gas delivery system. The aerosol is pyrolyzed to form particles, which are then cooled and collected. The invention also provides powders made by the method and devices made using the powders.
摘要翻译：提供了一种用于制备各种材料的粉末产品的气溶胶方法和配套装置，其涉及使用超声波气溶胶发生器（106），所述超声波气溶胶发生器包括多个超声换能器（120），所述多个超声波换能器在液体进料（102）），其形成气溶胶的液滴。载气（104）通过从气体输送系统输送气体的多个气体输送口（136）输送到储存器的不同部分。气溶胶被热解形成颗粒，然后将其冷却并收集。本发明还提供通过使用粉末制造的方法和装置制成的粉末。

102. 发明申请

US20090094901A1 CMP Polishing Liquid and Polishing Method 审中-公开
标题翻译： CMP抛光液和抛光方法
公开(公告)号：US20090094901A1
公开(公告)日：2009-04-16
申请号：US12298342
申请日：2007-04-24
申请人： Takashi Shinoda , Shigeru Nobe , Takaaki Tanaka
发明人： Takashi Shinoda , Shigeru Nobe , Takaaki Tanaka
IPC分类号： B24B37/00 , H01L21/304 , H01L21/306 , C09K3/14
CPC分类号： H01L21/7684 , B24B37/044 , C09G1/02 , H01L21/3212
摘要： A CMP polishing liquid being capable of using in a chemical mechanical polishing comprising of: a first chemical mechanical polishing step of polishing a conductive substance layer of a substrate having an interlayer insulation film containing convex and concave regions on a surface thereof, a barrier layer coating along the surface of the interlayer insulation film, and the conductive substance layer coating the barrier layer while filling the concave regions, and thus exposing the barrier layer in the convex regions; and a second chemical mechanical polishing step of exposing the interlayer insulation film in the convex regions by polishing the barrier layer exposed in the first chemical mechanical polishing step; characterized in that a difference (B)−(A) is 650 {acute over (Å)} or less, wherein the (A) is a polishing amount of the interlayer insulation film in a field area when the interlayer insulation film in the field area having a width of 1,000 μm or more of the interlayer insulation film region formed on the substrate is polished to a depth of 400 {acute over (Å)} or more; and the (B) is a polishing amount of the interlayer insulation film in a stripe-shaped patterned area having a total width of 1,000 μm or more wherein a wiring metal region having a width of 90 μm and the interlayer insulation film region having a width of 10 μm are aligned alternately on the substrate when the interlayer insulation film in the field area having the width of 1,000 μm or more of the interlayer insulation film region formed on the substrate is polished to a depth of 400 {acute over (Å)} or more.
摘要翻译：一种能够在化学机械抛光中使用的CMP抛光液，包括：第一化学机械抛光步骤，其在其表面上抛光具有包含凸凹区域的层间绝缘膜的基板的导电物质层，阻挡层涂层沿着所述层间绝缘膜的表面，并且所述导电物质层在填充所述凹区域的同时涂覆所述阻挡层，从而使所述阻挡层暴露在所述凸部区域中。以及第二化学机械抛光步骤，通过对在所述第一化学机械抛光步骤中暴露的所述阻挡层进行抛光来使所述凸起区域中的所述层间绝缘膜曝光; 其特征在于，差异（B） - （A）为650（锐锐度（））以下，其中，（A）是场内层间绝缘膜的场区域中的层间绝缘膜的研磨量将形成在基板上的层间绝缘膜区域的宽度为1,000μm以上的区域抛光至深度为400（）以上的深度; （B）是总宽度为1000μm以上的条状图案区域中的层间绝缘膜的研磨量，其中宽度为90μm的布线金属区域和宽度为90μm的层间绝缘膜区域当在衬底上形成的层间绝缘膜区域的宽度为1,000μm或更大的场区域中的层间绝缘膜被抛光到深度为400（）时，交替地在衬底上对准10微米。或者更多。

103. 发明申请

US20090093118A1 POLISHING COMPOSITION 审中-公开
标题翻译：抛光组合物
公开(公告)号：US20090093118A1
公开(公告)日：2009-04-09
申请号：US11911508
申请日：2006-04-14
申请人： Nobuo Uotani , Hiroshi Takahashi , Takashi Sato , Hajime Sato
发明人： Nobuo Uotani , Hiroshi Takahashi , Takashi Sato , Hajime Sato
IPC分类号： H01L21/461 , C09G1/02
CPC分类号： H01L21/3212 , B24B37/044 , C09G1/02 , C09K3/1463
摘要： In order to polish a wiring metal, a polishing composition ensuring that etching and erosion are suppressed and the residual wiring metal on the portion other than wiring is decreased, is provided, in which a polishing composition comprising (A) an azole group-containing compound having 3 or more azole groups within the molecule and a molecular weight of 300 to 15,000, (B) an oxidant, and (C) one, two or more acids selected from the group consisting of an amino acid, an organic acid and an inorganic acid is provided.
摘要翻译：为了研磨布线金属，可以提供确保蚀刻和侵蚀的抛光组合物，并且布线以外的部分上的残留布线金属减少，其中包含（A）含唑类化合物在分子内具有3个或更多个唑基，分子量为300至15,000，（B）氧化剂，和（C）选自氨基酸，有机酸和无机酸的一种或多种酸提供酸。

104. 发明申请

US20080283502A1 Compositions, methods and systems for polishing aluminum oxide and aluminum oxynitride substrates 审中-公开
标题翻译：用于抛光氧化铝和氮氧化铝衬底的组合物，方法和系统
公开(公告)号：US20080283502A1
公开(公告)日：2008-11-20
申请号：US11442475
申请日：2006-05-26
申请人： Kevin Moeggenborg , Mukesh Desai
发明人： Kevin Moeggenborg , Mukesh Desai
IPC分类号： C09K13/00 , C03C15/00 , H01L21/302
CPC分类号： B24B37/0056 , B24B37/044 , C09G1/02 , C09K3/1409 , C09K3/1463
摘要： A method and system is provided for improved polishing or planarizing of aluminum oxide and/or aluminum oxynitride substrates. Specifically, the composition comprises an abrasive, a liquid carrier, and a phosphorus-type mono-acid. Preferably, the phosphorus-type mono-acid is phosphoric acid, phosphonoacetic acid, phosphorous acid, methyl phosphonic acid, or mixtures thereof. The control of the pH of the composition further improves polishing rates.
摘要翻译：提供了一种用于改进氧化铝和/或氮氧化铝衬底的抛光或平面化的方法和系统。具体地，组合物包含研磨剂，液体载体和磷型单酸。优选地，磷型单酸是磷酸，膦酰基乙酸，亚磷酸，甲基膦酸或其混合物。控制组合物的pH进一步提高了抛光速率。

105. 发明申请

US20080200033A1 POLISHING COMPOUND, METHOD FOR POLISHING SURFACE TO BE POLISHED, AND PROCESS FOR PRODUCING SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE 审中-公开
标题翻译：抛光化合物，用于抛光表面抛光的方法，以及用于生产半导体集成电路器件的方法
公开(公告)号：US20080200033A1
公开(公告)日：2008-08-21
申请号：US12045325
申请日：2008-03-10
申请人： Satoshi TAKEMIYA
发明人： Satoshi TAKEMIYA
IPC分类号： H01L21/304 , C09K3/14
CPC分类号： C09K3/1463 , B24B37/044 , C09G1/02 , H01L21/31053 , H01L21/3212
摘要： To provide a polishing compound which is capable of polishing SiC at a high removal rate, or capable of suppressing polishing of silicon dioxide in an insulating layer on the other hand, while polishing SiC at a high removal rate, in production of a semiconductor integrated circuit device, whereby it is possible to obtain a semiconductor integrated circuit device having a planarized multiplayer structure.The present polishing compound comprising abrasive particles (A), an adjusting agent of removal rate (B) which is at least one selected from the group consisting of a benzotriazole, a 1H-tetrazole, a benzene sulfonic acid, phosphoric acid or organic phosphonic acid, an organic solvent (C) having a relative permittivity of from 15 to 80, a boiling point of from 60 to 250° C. and a viscosity of from 0.5 to 60 mPa·S at 25° C., and water (D).
摘要翻译：为了提供能够以高去除速度研磨SiC或能够抑制绝缘层中的二氧化硅的研磨的抛光化合物，在以高的去除速度抛光SiC的同时，在半导体集成电路的制造中装置，由此可以获得具有平坦化的多玩家结构的半导体集成电路装置。本抛光剂包含磨粒（A），除去速度（B）的调节剂，其为选自苯并三唑，1H-四唑，苯磺酸，磷酸或有机膦酸中的至少一种，相对介电常数为15〜80，沸点为60〜250℃，粘度在25℃下为0.5〜60mPa.S的有机溶剂（C），水（D）。

106. 发明授权

US07413832B2 Method of producing a glass substrate for a mask blank, method of producing a mask blank, and method of producing a transfer mask 有权
标题翻译：制造掩模坯料用玻璃基板的方法，掩模坯料的制造方法以及转印掩模的制造方法
公开(公告)号：US07413832B2
公开(公告)日：2008-08-19
申请号：US10642657
申请日：2003-08-19
申请人： Kesahiro Koike , Junji Miyagaki
发明人： Kesahiro Koike , Junji Miyagaki
IPC分类号： C03F1/00 , B24B1/00 , C03C17/00 , C03C19/00 , B05D3/12
CPC分类号： C09G1/02 , B24B37/044
摘要： In a method of producing a glass substrate for a mask blank, a surface of the glass substrate is polished by the use of a polishing liquid having a pH value between 7.0 and 7.6 that contains abrasive grains, and the abrasive grains include colloidal silica abrasive grains produced by hydrolysis of an organosilicon compound. The polishing process includes a surface roughness control step for initially finishing the surface of the glass substrate to a predetermined surface roughness by moving a polishing member and the glass substrate relative to each other under a predetermined pressure. This is followed by a protrusion suppressing step, carried out immediately before the end of the polishing process, under a pressure lower than the predetermined pressure, to minimize polishing rate and suppress occurrence of a fine convex protrusion. A mask blank and then a transfer mask are formed from this polished glass substrate.
摘要翻译：在制造掩模用玻璃基板的方法中，通过使用含有磨粒的pH值为7.0〜7.6的研磨液对玻璃基板的表面进行研磨，磨粒包括胶体二氧化硅磨粒通过有机硅化合物的水解产生。抛光工艺包括表面粗糙度控制步骤，用于通过在预定压力下相对于彼此移动抛光构件和玻璃基板来最初将玻璃基板的表面完成到预定的表面粗糙度。接下来是在低于预定压力的压力下在抛光过程结束之前执行的突起抑制步骤，以最小化抛光速率并抑制细凸起突出的发生。从该抛光的玻璃基板形成掩模坯料，然后形成转印掩模。

107. 发明授权

US07344989B2 CMP wafer contamination reduced by insitu clean 有权
标题翻译： CMP晶圆污染通过本体清洁减少
公开(公告)号：US07344989B2
公开(公告)日：2008-03-18
申请号：US11207400
申请日：2005-08-19
申请人： Bradley S. Withers , Elvis M. Chan
发明人： Bradley S. Withers , Elvis M. Chan
IPC分类号： H01L21/302
CPC分类号： C23F3/00 , B24B37/044 , C09G1/02 , C23G1/02 , H01L21/02074 , H01L21/3212
摘要： Reducing CMP wafer contamination by in-situ clean is disclosed herein. The invention can be employed in a method in which a conductive layer is formed on a surface of a semiconductor wafer. After a portion of the conductive layer is removed, an acidic solution is directly or indirectly applied to the semiconductor wafer. Then the semiconductor wafer is engaged with a polishing pad as the acidic solution is applied directly or indirectly to the semiconductor wafer. In one embodiment, the portion of the conductive layer is removed by a CMP tool, and the semiconductor wafer is engaged with the polishing pad before the semiconductor is removed from the CMP tool.
摘要翻译：本文公开了通过原位清洁来减少CMP晶片污染。本发明可以用于在半导体晶片的表面上形成导电层的方法。在去除导电层的一部分之后，将酸性溶液直接或间接地施加到半导体晶片。然后当酸性溶液直接或间接地施加到半导体晶片时，半导体晶片与抛光垫接合。在一个实施例中，通过CMP工具去除导电层的一部分，并且在从CMP工具移除半导体之前半导体晶片与抛光垫接合。

108. 发明申请

US20080051010A1 Polishing Composition and Polishing Method 有权
标题翻译：抛光组合和抛光方法
公开(公告)号：US20080051010A1
公开(公告)日：2008-02-28
申请号：US11844014
申请日：2007-08-23
申请人： Yasuhide UEMURA
发明人： Yasuhide UEMURA
IPC分类号： B24B1/00 , C09K3/14
CPC分类号： H01L21/02024 , B24B37/044 , C09G1/02 , C09K3/1463
摘要： A polishing composition contains at least one water soluble polymer selected from the group consisting of polyvinylpyrrolidone and poly(N-vinylformamide), and an alkali, and preferably further contains at least one of a chelating agent and an abrasive grain. The water soluble polymer preferably has a weight average molecular weight of 6,000 to 4,000,000. The polishing composition is mainly used in polishing of the surfaces of semiconductor wafers such as silicon wafers, especially used in preliminary polishing of the surfaces of such wafers.
摘要翻译：抛光组合物含有至少一种选自聚乙烯吡咯烷酮和聚（N-乙烯基甲酰胺）的水溶性聚合物和碱，并且优选还含有螯合剂和磨粒中的至少一种。水溶性聚合物的重均分子量优选为6000〜4,000,000。抛光组合物主要用于抛光诸如硅晶片的半导体晶片的表面，特别是用于这些晶片的表面的初步抛光。

109. 发明申请

US20080045021A1 DUAL REDUCED AGENTS FOR BARRIER REMOVAL IN CHEMICAL MECHANICAL POLISHING 审中-公开
标题翻译：用于化学机械抛光中的障碍物去除的双重还原剂
公开(公告)号：US20080045021A1
公开(公告)日：2008-02-21
申请号：US11923276
申请日：2007-10-24
申请人： Stan Tsai , Shijian Li , Feng Liu , Lizhong Sun , Liang-Yuh Chen
发明人： Stan Tsai , Shijian Li , Feng Liu , Lizhong Sun , Liang-Yuh Chen
IPC分类号： H01L21/461
CPC分类号： B24B37/0056 , B24B37/044 , C09G1/02 , C09K3/1463 , H01L21/3212
摘要： Compositions and methods for removal of barrier layer materials by a chemical mechanical polishing technique are provided. In one aspect, the invention provides a composition adapted for removing a barrier layer material in a chemical mechanical polishing technique including at least one reducing agent selected from the group of bicarboxylic acids, tricarboxylic acids, and combinations thereof, at least one reducing agent selected from the group of glucose, hydroxylamine, and combinations thereof, and deionized water, wherein the composition has a pH of about 7 or less. The composition may be used in a method for removing the barrier layer material including applying the composition to a polishing pad and polishing the substrate in the presence of the composition to remove the barrier layer.
摘要翻译：提供了通过化学机械抛光技术去除阻挡层材料的组合物和方法。一方面，本发明提供一种组合物，其适于在化学机械抛光技术中除去阻挡层材料，该技术包括至少一种选自二羧酸，三羧酸及其组合的还原剂，至少一种还原剂，其选自该组葡萄糖，羟胺及其组合以及去离子水，其中所述组合物具有约7或更低的pH。组合物可以用于除去阻挡层材料的方法，包括将组合物施加到抛光垫上，并在组合物存在下抛光基底以除去阻挡层。

110. 发明申请

US20080035882A1 COMPOSITION FOR POLISHING A SUBSTRATE 审中-公开
标题翻译：用于抛光基材的组合物
公开(公告)号：US20080035882A1
公开(公告)日：2008-02-14
申请号：US11877344
申请日：2007-10-23
申请人： Junzi Zhao , You Wang , Feng Liu , Stan Tsai
发明人： Junzi Zhao , You Wang , Feng Liu , Stan Tsai
IPC分类号： C09K13/06 , C09K13/00 , C09K13/04
CPC分类号： H01L21/7684 , B24B37/044 , C09G1/02 , C09G1/04 , C25F3/02 , H01L21/32125
摘要： Polishing compositions and methods for removing barrier materials from a substrate surface are provided. In one aspect, a composition is provided for removing at least a barrier material from a substrate surface including an acid based electrolyte system, one or more chelating agents, one or more pH adjusting agents to provide a pH between about 3 and about 11, and a solvent. The composition may be used in an electrochemical mechanical planarization process. The polishing compositions and methods described herein improve the effective removal rate of barrier materials from the substrate surface with a reduction in planarization type defects.
摘要翻译：提供了用于从衬底表面去除阻挡材料的抛光组合物和方法。一方面，提供一种组合物，用于从基材表面至少除去阻挡材料，所述基材表面包括酸性电解质体系，一种或多种螯合剂，一种或多种pH调节剂以提供约3至约11的pH，以及溶剂。该组合物可用于电化学机械平面化工艺中。本文所述的抛光组合物和方法通过减小平坦化型缺陷来改善阻挡材料从衬底表面的有效去除速率。

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