专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

101. 发明授权

US07799589B2 Optical waveguide apparatus and method for manufacturing the same 有权
标题翻译：光波导装置及其制造方法
公开(公告)号：US07799589B2
公开(公告)日：2010-09-21
申请号：US12076617
申请日：2008-03-20
申请人： Shoji Akiyama , Yoshihiro Kuboto , Atsuo Ito , Koichi Tanaka , Yuuji Tobisaka , Makoto Kawai
发明人： Shoji Akiyama , Yoshihiro Kuboto , Atsuo Ito , Koichi Tanaka , Yuuji Tobisaka , Makoto Kawai
IPC分类号： H01L21/00
CPC分类号： G02B6/132 , G02B6/1347 , G02F1/0126 , G02F1/025 , G02F2202/105 , G02F2203/48 , Y10S438/967
摘要： An optical waveguide apparatus having a very simple structure that can modulate a signal light guided through an optical waveguide is provided. A photoresist 13 is applied to an upper side of an SOI film 12, a photoresist mask 14 is formed, and the SOI film in a region that is not covered with the photoresist mask 14 is removed by etching to obtain an optical waveguide 15 having a single-crystal silicon core. Further, a light emitting device capable of irradiating the single-crystal silicon core with a light having a wavelength of 1.1 μm or below is provided on a back surface side of a quartz substrate 20 to provide an optical waveguide apparatus. When the light emitting device 30 does not apply a light, the light guided through the optical waveguide 15 is guided as it is. However, when the light emitting device 30 applies a light to form each pair of an electron and a hole in the irradiated region 16, the light guided through the optical waveguide 15 is absorbed by the pair of an electron and a hole, thereby enabling switching (modulation) for turning ON/OFF an optical signal depending on presence/absence (ON or OFF) of application of the light from the light emitting device 30.
摘要翻译：提供一种具有可以调制通过光波导引导的信号光的非常简单结构的光波导装置。将光致抗蚀剂13施加到SOI膜12的上侧，形成光致抗蚀剂掩模14，并且通过蚀刻除去未被光致抗蚀剂掩模14覆盖的区域中的SOI膜，以获得具有单晶硅芯。此外，在石英基板20的背面侧设置能够用波长为1.1μm以下的光照射单晶硅芯的发光装置，以提供光波导装置。当发光器件30不施加光时，通过光波导15引导的光被原样引导。然而，当发光器件30在照射区域16中施加光以形成每对电子和空穴时，通过光波导15引导的光被一对电子和空穴吸收，从而能够切换（调制），用于根据来自发光装置30的光的施加的存在/不存在（ON或OFF）来接通/关闭光信号。

102. 发明授权

US07251402B2 Anti-reflection coating for the pass-band of photonic bandgap crystal 有权
公开(公告)号：US07251402B2
公开(公告)日：2007-07-31
申请号：US11210231
申请日：2005-08-23
申请人： Shoji Akiyama , Ivan Celanovic , Natalija Z. Jovanovic , Francis O'Sullivan , Kazumi Wada
发明人： Shoji Akiyama , Ivan Celanovic , Natalija Z. Jovanovic , Francis O'Sullivan , Kazumi Wada
IPC分类号： G02B6/10
CPC分类号： G02B1/115 , B82Y20/00 , G02B1/005
摘要： Light transmission is maximized through the pass band of a photonic bandgap (PBG) crystal (having alternating high- and low-index material) while preserving high reflection for stop band. An anti-reflective coating (ARC) is used to coat the PBG crystal wherein the ARC material has a refractive index of n=(nair×nhigh index material)1/2 and thickness around λc/8 where λc is center wavelength.

103. 发明申请

US20070053651A1 Anti-reflection coating for the pass-band of photonic bandgap crystal 有权
标题翻译：用于光子带隙晶体的通带的防反射涂层
公开(公告)号：US20070053651A1
公开(公告)日：2007-03-08
申请号：US11210231
申请日：2005-08-23
申请人： Shoji Akiyama , Ivan Celanovic , Natalija Jovanovic , Francis O'Sullivan , Kazumi Wada
发明人： Shoji Akiyama , Ivan Celanovic , Natalija Jovanovic , Francis O'Sullivan , Kazumi Wada
IPC分类号： G02B6/00
CPC分类号： G02B1/115 , B82Y20/00 , G02B1/005
摘要： Light transmission is maximized through the pass band of a photonic bandgap (PBG) crystal (having alternating high- and low-index material) while preserving high reflection for stop band. An anti-reflective coating (ARC) is used to coat the PBG crystal wherein the ARC material has a refractive index of n=(nair×nhigh index material)1/2 and thickness around λc/8 where λc is center wavelength.
摘要翻译：通过光子带隙（PBG）晶体（具有交替的高折射率材料和低折射率材料）的通带使光透射最大化，同时保持了对阻带的高反射。使用抗反射涂层（ARC）涂覆PBG晶体，其中ARC材料具有n =（n xn>高折射率材料）的折射率 > 1/2>和lambdac / 8周围的厚度，其中lambdac是中心波长。

104. 发明申请

US20070048444A1 MANUFACTURING METHOD OF OPTICAL DISK AND ITS MANUFACTURING APPARATUS 审中-公开
标题翻译：光盘制造方法及其制造方法
公开(公告)号：US20070048444A1
公开(公告)日：2007-03-01
申请号：US11464939
申请日：2006-08-16
申请人： Hidetoshi Watanabe , Shoji Akiyama
发明人： Hidetoshi Watanabe , Shoji Akiyama
IPC分类号： B05D5/06 , B05D3/12 , C08F2/46 , B05C11/02 , C23C14/00
CPC分类号： G11B7/263 , B29C43/021 , B29C43/36 , B29C43/56 , B29C2043/025 , B29C2043/043 , B29C2043/3488 , B29C2043/3602 , B29C2043/3634 , B29C2043/561 , B29C2043/566 , B29C2791/006 , B29K2105/0002 , B29L2017/005 , Y02P20/582
摘要： A manufacturing method of an optical disk in which information recording layers are formed onto a resin layer laminated on a substrate surface. The substrate surface is coated with the resin layer. The substrate and a stamper are arranged into a vacuum chamber so that the resin layer surface and the stamper surface with concave/convex portions face almost in parallel. The chamber is set into an almost vacuum state while holding the facing state of the substrate and the stamper. The chamber is changed from the almost vacuum state to an atmospheric pressure or higher. The substrate and the stamper are overlaid. The stamper is pressed by a differential pressure between the almost vacuum pressure and the atmospheric pressure or higher, thereby adhering the substrate and the stamper and transferring the concave/convex portions to the resin layer. The resin layer with the transferred concave/convex portions is hardened.
摘要翻译：在层叠在基板表面上的树脂层上形成信息记录层的光盘的制造方法。衬底表面涂有树脂层。将基板和压模布置在真空室中，使得树脂层表面和具有凹凸部的压模表面几乎平行地面对。在保持基板和压模的面对状态的同时，将室设定为几乎真空状态。该室从几乎真空状态变为大气压或更高。衬底和压模重叠。压模在几乎真空压力和大气压之间的压差下被按压，从而粘合基板和压模，并将凹/凸部分传递到树脂层。具有转印凹凸部的树脂层硬化。

105. 发明授权

US06878645B2 Method for manufacturing silicon wafer 有权
标题翻译：硅晶片制造方法
公开(公告)号：US06878645B2
公开(公告)日：2005-04-12
申请号：US10332576
申请日：2001-07-06
申请人： Norihiro Kobayashi , Shoji Akiyama , Masaro Tamatsuka , Masaru Shinomiya , Yuichi Matsumoto
发明人： Norihiro Kobayashi , Shoji Akiyama , Masaro Tamatsuka , Masaru Shinomiya , Yuichi Matsumoto
IPC分类号： H01L21/205 , H01L21/322 , H01L21/324 , H01L21/26 , H01L21/42 , H01L21/477
CPC分类号： H01L21/3247 , H01L21/3225 , H01L21/324
摘要： Provided is a process for manufacturing a silicon wafer employing heat treatment which is applied on the silicon wafer in inert gas atmosphere represented by Ar annealing to annihilate Grown-in defects in a surface layer region of the silicon wafer as well as to cause no degradation of haze and micro-roughness on a surface thereof. In a process for manufacturing a silicon wafer having a step of heat treating the silicon wafer in inert gas atmosphere, using a purge box with which the silicon wafer heat treated in the inert gas atmosphere can be unloaded to outside a reaction tube of a heat treatment furnace without being put into contact with the open air, the purge box is filled with mixed gas of nitrogen and oxygen or 100% oxygen gas, and the heat treated silicon wafer is unloaded into the purge box.
摘要翻译：提供一种使用热处理制造硅晶片的方法，该硅晶片在由Ar退火表示的惰性气体气氛中施加在硅晶片上，以消除硅晶片的表面层区域中的生长缺陷，并且不会导致在其表面上的雾度和微观粗糙度。在制造具有在惰性气体气氛中对硅晶片进行热处理的步骤的硅晶片的制造方法中，使用在惰性气体气氛中进行了热处理的硅晶片能够在热处理反应管外排出的清洗箱在不与露天接触的情况下，将氮气和氧气或100％氧气的混合气体充满净化箱，将热处理后的硅晶片卸载到净化箱中。

106. 发明申请

US20050025691A1 Method for heat treatment of silicon wafers and silicon wafer 有权
标题翻译：硅晶片和硅晶片的热处理方法
公开(公告)号：US20050025691A1
公开(公告)日：2005-02-03
申请号：US10929480
申请日：2004-08-31
申请人： Norihiro Kobayashi , Shoji Akiyama , Yuuichi Matsumoto , Masaro Tamatsuka
发明人： Norihiro Kobayashi , Shoji Akiyama , Yuuichi Matsumoto , Masaro Tamatsuka
IPC分类号： H01L21/322 , C01B33/02
CPC分类号： H01L21/3225 , Y10S438/913 , Y10S438/935 , Y10S438/955 , Y10S438/974
摘要： According to the present invention, there are provided a method for heat treatment of silicon wafers wherein a silicon wafer is subjected to a heat treatment at a temperature of from 1000° C. to the melting point of silicon in an inert gas atmosphere, and temperature decreasing in the heat treatment is performed in an atmosphere containing 1-60% by volume of hydrogen, a method for heat treatment of silicon wafers under a reducing atmosphere containing hydrogen by using a rapid heating and rapid cooling apparatus, wherein temperature decreasing rate from the maximum temperature in the heat treatment to 700° C. is controlled to be 20° C./sec or less, and a silicon wafer which has a crystal defect density of 1.0×104 defects/cm3 or more in a wafer bulk portion, a crystal defect density of 1.0×104 defects/cm3 or less in a wafer surface layer of a depth of 0.5 μm from the surface, a crystal defect density of 0.15 defects/cm2 or less on a wafer surface and surface roughness of 1.0 nm or less in terms of the P-V value. By these, crystal defects in wafer surface layers can be reduced by a simple method with a small amount of hydrogen used without degrading microroughness of wafers.
摘要翻译：根据本发明，提供了一种硅晶片的热处理方法，其中硅晶片在惰性气体气氛中在1000℃至硅熔点下进行热处理，温度热处理的降低在含有1-60体积％的氢气的气氛中进行，通过使用快速加热和快速冷却装置在含氢气的还原气氛下热处理硅晶片的方法，其中从在700℃的热处理中的最高温度被控制在20℃/秒以下，并且在a的情况下，晶体缺陷密度为1.0×10 4缺陷/ cm 3以上的硅晶片晶片本体部分，表面0.5μm深的晶片表面层中的晶体缺陷密度为1.0×10 4缺陷/ cm 3或更小，晶体缺陷密度为0.15缺陷/ cm 2或较少在晶圆表面和表面粗糙度1 在P-V值方面为0.0nm以下。通过这些，可以通过使用少量氢气的简单方法来降低晶片表面层中的晶体缺陷，而不降低晶片的微观粗糙度。

107. 发明授权

US06809015B2 Method for heat treatment of silicon wafers and silicon wafer 有权
标题翻译：硅晶片和硅晶片的热处理方法
公开(公告)号：US06809015B2
公开(公告)日：2004-10-26
申请号：US10338726
申请日：2003-01-09
申请人： Norihiro Kobayashi , Shoji Akiyama , Yuuichi Matsumoto , Masaro Tamatsuka
发明人： Norihiro Kobayashi , Shoji Akiyama , Yuuichi Matsumoto , Masaro Tamatsuka
IPC分类号： H01L2124
CPC分类号： H01L21/3225 , Y10S438/913 , Y10S438/935 , Y10S438/955 , Y10S438/974
摘要： According to the present invention, there are provided a method for heat treatment of silicon wafers wherein a silicon wafer is subjected to a heat treatment at a temperature of from 1000° C. to the melting point of silicon in an inert gas atmosphere, and temperature decreasing in the heat treatment is performed in an atmosphere containing 1-60% by volume of hydrogen, a method for heat treatment of silicon wafers under a reducing atmosphere containing hydrogen by using a rapid heating and rapid cooling apparatus, wherein temperature decreasing rate from the maximum temperature in the heat treatment to 700° C. is controlled to be 20° C./sec or less, and a silicon wafer which has a crystal defect density of 1.0×104 defects/cm3 or more in a wafer bulk portion, a crystal defect density of 1.0×104 defects/cm3 or less in a wafer surface layer of a depth of 0.5 &mgr;m from the surface, a crystal defect density of 0.15 defects/cm2 or less on a wafer surface and surface roughness of 1.0 nm or less in terms of the P-V value. By these, crystal defects in wafer surface layers can be reduced by a simple method with a small amount of hydrogen used without degrading microroughness of wafers.
摘要翻译：根据本发明，提供了一种硅晶片的热处理方法，其中硅晶片在惰性气体气氛中在1000℃至硅熔点下进行热处理，温度热处理的降低在含有1-60体积％的氢气的气氛中进行，通过使用快速加热和快速冷却装置在含氢气的还原气氛下热处理硅晶片的方法，其中从在700℃的热处理中的最高温度被控制在20℃/秒以下，并且在a的情况下，晶体缺陷密度为1.0×10 4缺陷/ cm 3以上的硅晶片晶片本体部分，表面0.5μm深的晶片表面层中的晶体缺陷密度为1.0×10 4缺陷/ cm 3或更小，晶体缺陷密度为0.15缺陷/ cm 2或较少在晶圆表面和表面粗糙度1 在P-V值方面为0.0nm以下。通过这些，可以通过使用少量氢气的简单方法来降低晶片表面层中的晶体缺陷，而不降低晶片的微观粗糙度。

108. 发明授权

US06666265B1 Heat exchanger, method of manufacturing the heat exchanger, and method of manufacturing tube for heat exchange 失效
标题翻译：热交换器，热交换器的制造方法以及热交换管的制造方法
公开(公告)号：US06666265B1
公开(公告)日：2003-12-23
申请号：US09913964
申请日：2001-08-21
申请人： Soichi Kato , Muneo Sakurada , Shin Kurihara , Shoji Akiyama , Jun Akaike , Kazuo Ochiai
发明人： Soichi Kato , Muneo Sakurada , Shin Kurihara , Shoji Akiyama , Jun Akaike , Kazuo Ochiai
IPC分类号： F28F100
CPC分类号： B21C37/151 , B21C37/104 , B21D53/04 , B21D53/085 , F28D1/0391 , F28F3/04 , Y10T29/49391
摘要： A heat exchanger is comprising a core which is consisting of tubes provided with medium passages and fins fitted to the tubes, and tanks to which ends of the tubes are connected, wherein the tube (2) is formed to have a flat cross-sectional shape by joining ends of one or two plates, the ends of the plates have a contact portion which is formed by bending at least one of the plate ends a plurality of times and overlaying the one end on the other end, and the contact portion is provided with a joint portion (2c) which is formed by placing a part (2e) of the contact portion on the top or bottom flat surface and mutually engaging the both ends of the plate.
摘要翻译：一种热交换器包括一个芯，该芯由设置有管道的介质通道和翅片的管以及连接管的端部的罐组成，其中管（2）形成为具有平坦的横截面形状通过接合一个或两个板的端部，板的端部具有接触部分，该接触部分通过多次弯曲板端部中的至少一个并且在另一端上覆盖一端而形成，并且提供接触部分具有通过将接触部分的部分（2e）放置在顶部或底部平坦表面上并且相互接合板的两端而形成的接合部分（2c）。

109. 发明授权

US06573159B1 Method for thermally annealing silicon wafer and silicon wafer 有权
标题翻译：硅晶片和硅晶片的热退火方法
公开(公告)号：US06573159B1
公开(公告)日：2003-06-03
申请号：US09622203
申请日：2000-08-14
申请人： Norihiro Kobayashi , Shoji Akiyama , Yuuichi Matsumoto , Masaro Tamatsuka
发明人： Norihiro Kobayashi , Shoji Akiyama , Yuuichi Matsumoto , Masaro Tamatsuka
IPC分类号： H01L2124
CPC分类号： H01L21/3225 , Y10S438/913 , Y10S438/935 , Y10S438/955 , Y10S438/974
摘要： According to the present invention, there are provided a method for heat treatment of silicon wafers wherein a silicon wafer is subjected to a heat treatment at a temperature of from 1000° C. to the melting point of silicon in an inert gas atmosphere, and temperature decreasing in the heat treatment is performed in an atmosphere containing 1-60% by volume of hydrogen, a method for heat treatment of silicon wafers under a reducing atmosphere containing hydrogen by using a rapid heating and rapid cooling apparatus, wherein temperature decreasing rate from the maximum temperature in the heat treatment to 700° C. is controlled to be 20° C./sec or less, and a silicon wafer which has a crystal defect density of 1.0×104 defects/cm3 or more in a wafer bulk portion, a crystal defect density of 1.0×104 defects/cm3 or less in a wafer surface layer of a depth of 0.5 &mgr;m from the surface, a crystal defect density of 0.15 defects/cm2 or less on a wafer surface and surface roughness of 1.0 nm or less in terms of the P-V value. By these, crystal defects in wafer surface layers can be reduced by a simple method with a small amount of hydrogen used without degrading microroughness of wafers.
摘要翻译：根据本发明，提供了一种硅晶片的热处理方法，其中硅晶片在惰性气体气氛中在1000℃至硅熔点下进行热处理，温度热处理的降低在含有1-60体积％的氢气的气氛中进行，通过使用快速加热和快速冷却装置在含氢气的还原气氛下热处理硅晶片的方法，其中从控制到700℃的热处理的最高温度为20℃/秒以下，在晶片本体部分中的晶体缺陷密度为1.0×10 4个/ cm 3以上的硅晶片，晶体表面0.5μm深的晶片表面层的缺陷密度为1.0×10 4个/ cm3以下，晶片表面的晶体缺陷密度为0.15个/ cm 2以下，表面粗糙度为1.0nm或l 在P-V值方面。通过这些，可以通过使用少量氢气的简单方法来降低晶片表面层中的晶体缺陷，而不降低晶片的微观粗糙度。

110. 发明授权

US06492682B1 Method of producing a bonded wafer and the bonded wafer 失效
标题翻译：制造接合晶片和接合晶片的方法
公开(公告)号：US06492682B1
公开(公告)日：2002-12-10
申请号：US09830389
申请日：2001-04-26
申请人： Shoji Akiyama , Masaro Tamatsuka
发明人： Shoji Akiyama , Masaro Tamatsuka
IPC分类号： H01L2701
CPC分类号： H01L21/76251
摘要： There is provided a method of producing a bonded SOI wafer wherein a silicon single crystal ingot is grown according to Czochralski method, the single crystal ingot is then sliced to produce a silicon single crystal wafer, the silicon single crystal wafer is subjected to heat treatment in a non-oxidizing atmosphere at a temperature of 1100° C. to 1300° C. for one minute or more and continuously to a heat treatment in an oxidizing atmosphere at a temperature of 700° C. to 1300° C. for one minute or more without cooling the wafer to a temperature less than 700° C. to provide a silicon single crystal wafer wherein a silicon oxide film is formed on the surface, and the resultant wafer is used as the bond wafer, and a bonded SOI wafer produced by the method. There can be provided a SOI wafer that has a SOI layer having few crystal defects, good surface roughness and high quality in high productivity, in high yield and with low cost.
摘要翻译：提供了根据切克劳斯基法生长硅单晶锭的接合SOI晶片的制造方法，然后将单晶锭切片以制造硅单晶晶片，对硅单晶晶片进行热处理在1100℃〜1300℃的温度下进行1分钟以上的非氧化性气氛，并在700℃〜1300℃的温度下在氧化气氛中持续热处理1分钟，或更没有将晶片冷却到低于700℃的温度，以提供其中在表面上形成氧化硅膜的硅单晶晶片，并且将所得晶片用作接合晶片，以及通过以下方式制造的键合SOI晶片：方法。可以提供SOI晶片，其SOI结晶缺陷少，表面粗糙度高，生产率高，成品率高，成本低。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式