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    • 107. 发明授权
    • Synchronization of traffic multiplexing in link aggregation
    • 流量复用在链路聚合中的同步
    • US09270579B2
    • 2016-02-23
    • US13458838
    • 2012-04-27
    • Yuchen ZhouRichard StewartAlex TsaiYibin Yang
    • Yuchen ZhouRichard StewartAlex TsaiYibin Yang
    • H04L12/28H04L12/56H04L12/709H04L12/707H04L29/06H04L12/751
    • H04L69/28H04L45/02H04L45/24H04L45/245H04L69/14Y02D50/30
    • Synchronization of traffic multiplexing in link aggregation is described. In an embodiment, a first link aggregator and a second link aggregator are associated with a plurality of links. The first link aggregator maintains an identifier for each link indicating at least a state of enabled or disabled. A synchronized clock is established between the first link aggregator and the second link aggregator. A particular link of the plurality of links is transitioned. Wherein, the transitioning is performed by the first link aggregator sending, to the second link aggregator, a first message identifying a particular time to transition the particular link. The first link aggregator receives, from the second link aggregator, a second message indicating that the particular time is acceptable. In response to a determination that the second message indicates that the particular time is acceptable and that the synchronized clock has reached the particular time, transitioning the link.
    • 描述了流量复用在链路聚合中的同步。 在一个实施例中,第一链路聚合器和第二链路聚合器与多个链路相关联。 第一链路聚合器维护每个链路的标识符,指示至少一个启用或禁用的状态。 在第一链路聚合器和第二链路聚合器之间建立同步时钟。 多个链接的特定链接被转换。 其中,由第一链路聚合器向第二链路聚合器发送标识转换特定链路的特定时间的第一消息来执行转换。 第一链路聚合器从第二链路聚合器接收指示特定时间是可接受的第二消息。 响应于第二消息指示特定时间是可接受的并且同步时钟已经到达特定时间的确定,转换链接。
    • 109. 发明授权
    • MTJ MRAM with stud patterning
    • MTJ MRAM螺柱图案
    • US08772888B2
    • 2014-07-08
    • US13572197
    • 2012-08-10
    • Dong Ha JungKimihiro SatohJing ZhangYuchen ZhouYiming Huai
    • Dong Ha JungKimihiro SatohJing ZhangYuchen ZhouYiming Huai
    • H01L43/00H01L43/12
    • H01L43/12H01L43/08
    • Use of a multilayer etching mask that includes a stud mask and a removable spacer sleeve for MTJ etching to form a bottom electrode that is wider than the rest of the MTJ pillar is described. The first embodiment of the invention described includes a top electrode and a stud mask. In the second and third embodiments the stud mask is a conductive material and also serves as the top electrode. In embodiments after the stud mask is formed a spacer sleeve is formed around it to initially increase the masking width for a phase of etching. The spacer is removed for further etching, to create step structures that are progressively transferred down into the layers forming the MTJ pillar. In one embodiment the spacer sleeve is formed by net polymer deposition during an etching phase.
    • 描述了包括螺柱掩模和用于MTJ蚀刻以形成比MTJ柱的其余部分宽的底部电极的可移除间隔套的多层蚀刻掩模的使用。 所描述的本发明的第一实施例包括顶部电极和螺柱掩模。 在第二和第三实施例中,螺柱掩模是导电材料,并且还用作顶部电极。 在形成螺柱掩模之后的实施例中,在其周围形成间隔套,以最初增加蚀刻阶段的掩模宽度。 去除间隔物用于进一步蚀刻,以产生逐渐转移到形成MTJ柱的层中的阶梯结构。 在一个实施例中,间隔套筒是在蚀刻阶段期间通过净聚合物沉积形成的。
    • 110. 发明授权
    • STT-MRAM MTJ manufacturing method with in-situ annealing
    • STT-MRAM MTJ具有原位退火的制造方法
    • US08758850B2
    • 2014-06-24
    • US13238972
    • 2011-09-21
    • Yuchen ZhouYiming Huai
    • Yuchen ZhouYiming Huai
    • G11C15/02
    • G11C11/161H01L43/12
    • A spin transfer torque magnetic random access memory (STTMRAM) element and a method of manufacturing the same is disclosed having a free sub-layer structure with enhanced internal stiffness. A first free sub-layer is deposited, the first free sub-layer being made partially of boron (B), annealing is performed of the STTMRAM element at a first temperature after depositing the first free sub-layer to reduce the B content at an interface between the first free sub-layer and the barrier layer, the annealing causing a second free sub-layer to be formed on top of the first free sub-layer and being made partially of B, the amount of B of the second free sub-layer being greater than the amount of B in the first free sub-layer. Cooling down the STTMRAM element to a second temperature that is lower than the first temperature and depositing a third free sub-layer directly on top of the second free layer, with the third free sub-layer being made partially of boron (B), wherein the amount of B in the third sub-free layer is less than the amount of B in the second free sub-layer.
    • 公开了具有增强的内部刚度的自由子层结构的自旋转矩磁性随机存取存储器(STTMRAM)元件及其制造方法。 沉积第一自由子层,第一自由子层部分由硼(B)制成,在沉积第一自由子层之后,在第一温度下对STTMRAM元素进行退火,以降低B 在第一自由子层和阻挡层之间的界面,退火使第二自由子层形成在第一自由子层的顶部上并且部分地由B构成,第二自由子层的B的量 层大于第一自由子层中的B的量。 将STTMRAM元件冷却至低于第一温度的第二温度,并将第三自由子层直接沉积在第二自由层的顶部上,第三自由子层部分由硼(B)制成,其中 第三子自由层中的B的量小于第二自由子层中的B的量。