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    • 101. 发明授权
    • Thermionic emission device
    • 热电子发射装置
    • US07772755B2
    • 2010-08-10
    • US12288863
    • 2008-10-23
    • Peng LiuLiang LiuKai-Li JiangShou-Shan Fan
    • Peng LiuLiang LiuKai-Li JiangShou-Shan Fan
    • H01J1/46H01J29/46
    • H01J1/15H01J1/13H01J29/04H01J31/127H01J2329/0402
    • A thermionic emission device includes an insulating substrate, and one or more grids located thereon. Each grid includes a first, second, third and fourth electrode down-leads located on the periphery thereof, and a thermionic electron emission unit therein. The first and second electrode down-leads are parallel to each other. The third and fourth electrode down-leads are parallel to each other. The first and second electrode down-leads are insulated from the third and fourth electrode down-leads. The thermionic electron emission unit includes a first electrode, a second electrode, and a thermionic electron emitter. The first electrode and the second electrode are separately located and electrically connected to the first electrode down-lead and the third electrode down-lead respectively. The insulating substrate comprises one or more recesses that further insulate the thermionic electron emitters from the substrate.
    • 热电子发射装置包括绝缘基板和位于其上的一个或多个网格。 每个栅格包括位于其周边上的第一,第二,第三和第四电极下引线及其中的热离子电子发射单元。 第一和第二电极下引线彼此平行。 第三和第四电极下引线彼此平行。 第一和第二电极下引线与第三和第四电极下引线绝缘。 热电子发射单元包括第一电极,第二电极和热离子电子发射体。 第一电极和第二电极分别位于第一电极下引线和第三电极引线下电连接。 绝缘衬底包括一个或多个凹部,其进一步将热离子电子发射体与衬底绝缘。
    • 108. 发明申请
    • Field Emission display device
    • 场发射显示装置
    • US20090160312A1
    • 2009-06-25
    • US12317146
    • 2008-12-19
    • Peng LiuLiang LiuKai-Li JiangShou-Shan Fan
    • Peng LiuLiang LiuKai-Li JiangShou-Shan Fan
    • H01J1/62
    • H01J29/04H01J31/127
    • A field emission device includes an insulating substrate, one or more grids located on the insulating substrate. Each grid includes a first, second, third and fourth electrode down-leads and an electron emitting unit. The first, second, third and fourth electrode down-leads are located on the periphery of the grid. The first and the second electrode down-leads are parallel to each other. The third and the fourth electrode down-leads are parallel to each other. The electron emitting unit includes a first electrode, a second electrode and at least one electron emitter. The first electrode is electrically connected to the first electrode down-lead, and the second electrode is electrically connected to the third electrode down-lead. One end of the electron emitter is connected to the second electrode and an opposite end of the electron emitter is spaced from the first electrode by a predetermined distance.
    • 场发射器件包括绝缘衬底,位于绝缘衬底上的一个或多个栅极。 每个栅格包括第一,第二,第三和第四电极下引线和电子发射单元。 第一,第二,第三和第四电极下引线位于电网的外围。 第一和第二电极下引线彼此平行。 第三和第四电极下引线彼此平行。 电子发射单元包括第一电极,第二电极和至少一个电子发射器。 第一电极与第一电极下引线电连接,第二电极与第三电极下引线电连接。 电子发射器的一端连接到第二电极,并且电子发射器的相对端与第一电极间隔预定距离。
    • 110. 发明授权
    • Thermionic electron emission device
    • 热电子发射装置
    • US08410675B2
    • 2013-04-02
    • US13301654
    • 2011-11-21
    • Peng LiuLiang LiuKai-Li JiangShou-Shan Fan
    • Peng LiuLiang LiuKai-Li JiangShou-Shan Fan
    • H01J63/04
    • H01J1/14H01J9/04H01J31/127H01J2201/196
    • A thermionic electron emission device includes an insulating substrate and one or more lattices located on the insulating substrate. Each lattice includes a first, second, third and fourth electrode down-leads located on the insulating substrate to define an area. A thermionic electron emission unit is located in the area. The thermionic electron emission unit includes a first electrode, a second electrode, and a thermionic electron emitter. The thermionic electron emitter includes a carbon nanotube film structure. The carbon nanotube film structure includes a carbon nanotube film. The carbon nanotube film includes a number of carbon nanotubes joined end to end along axial directions of the carbon nanotubes by contacting with each other directly.
    • 热电子发射器件包括绝缘衬底和位于绝缘衬底上的一个或多个晶格。 每个晶格包括位于绝缘基板上的第一,第二,第三和第四电极下引线,以限定一个区域。 热电子发射单元位于该区域。 热电子发射单元包括第一电极,第二电极和热离子电子发射体。 热电子发射体包括碳纳米管膜结构。 碳纳米管膜结构包括碳纳米管膜。 碳纳米管膜包括通过直接彼此接触而沿着碳纳米管的轴向方向端对端地连接的多个碳纳米管。