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101. 发明申请

US20090250594A1 SOLID-STATE IMAGE SENSOR AND MANUFACTURING METHOD THEREOF 审中-公开
标题翻译：固态图像传感器及其制造方法
公开(公告)号：US20090250594A1
公开(公告)日：2009-10-08
申请号：US12415127
申请日：2009-03-31
申请人： Keisuke Tanaka , Yutaka Hirose , Toshinobu Matsuno , Kimiaki Toshikiyo , Motonori Ishii
发明人： Keisuke Tanaka , Yutaka Hirose , Toshinobu Matsuno , Kimiaki Toshikiyo , Motonori Ishii
IPC分类号： H01L27/146 , H01L21/00 , H01L27/14
CPC分类号： H01L27/14627 , G02B5/201 , H01L27/14621 , H01L27/14623 , H01L27/14685 , H01L27/14689
摘要： A solid-state image sensor that has a high pixel count and includes a color filter having high color reproducibility is provided. The solid-state image sensor includes: light-collecting elements each of which is a medium containing dispersant particles; light-receiving elements each of which is provided for a corresponding one of the light-collecting elements, and which receives light collected by the corresponding one of the light-collecting elements and generates an electric signal; and electrical wiring for transferring the electric signal, wherein each of the light-collecting elements has one of plural light-dispersion functions that are different depending on the corresponding light-receiving elements.
摘要翻译：提供了具有高像素数并且包括具有高颜色再现性的滤色器的固态图像传感器。固态图像传感器包括：各自是含有分散剂颗粒的介质的集光元件; 光接收元件被设置用于相应的一个集光元件，并且接收由相应的一个光收集元件收集的光并产生电信号; 以及用于传送电信号的电线，其中每个集光元件具有根据相应的光接收元件而不同的多个光分散功能之一。

102. 发明授权

US07569906B2 Method for fabricating condenser microphone and condenser microphone 有权
标题翻译：制造电容式麦克风和电容麦克风的方法
公开(公告)号：US07569906B2
公开(公告)日：2009-08-04
申请号：US11702531
申请日：2007-02-06
申请人： Mitsuyoshi Mori , Keisuke Tanaka , Takumi Yamaguchi , Takuma Katayama
发明人： Mitsuyoshi Mori , Keisuke Tanaka , Takumi Yamaguchi , Takuma Katayama
IPC分类号： H01L29/00 , H01L29/84
CPC分类号： H04R19/04 , H01L25/162 , H01L27/0629 , H01L28/60 , H01L29/78 , H01L2924/0002 , H01L2924/00
摘要： A first semiconductor chip includes a fixed electrode formed on a first semiconductor substrate and a plurality of first metal spacers formed on a first interlayer dielectric. A second semiconductor chip includes a vibrating electrode formed on a second semiconductor substrate and a plurality of second metal spacers formed on a second interlayer dielectric. The first and second semiconductor chips are metallically bonded to each other using the first and second metal spacers. An air gap is formed in a region of the condenser microphone located between the first semiconductor chip and the second semiconductor chip except bonded regions of the first and second metal spacers.
摘要翻译：第一半导体芯片包括形成在第一半导体衬底上的固定电极和形成在第一层间电介质上的多个第一金属间隔物。第二半导体芯片包括形成在第二半导体衬底上的振动电极和形成在第二层间电介质上的多个第二金属间隔物。第一和第二半导体芯片使用第一和第二金属间隔物彼此金属结合。在位于第一半导体芯片和第二半导体芯片之间的电容式麦克风的区域中形成气隙，除了第一和第二金属间隔物的接合区域之外。

103. 发明申请

US20080284624A1 HIGH-RATE RLL ENCODING 失效
标题翻译：高速RLL编码
公开(公告)号：US20080284624A1
公开(公告)日：2008-11-20
申请号：US11749711
申请日：2007-05-16
申请人： Roy D. Cideciyan , Evangelos S. Eleftheriou , Thomas Mittelholzer , Paul J. Seger , Keisuke Tanaka
发明人： Roy D. Cideciyan , Evangelos S. Eleftheriou , Thomas Mittelholzer , Paul J. Seger , Keisuke Tanaka
IPC分类号： H03M7/00
CPC分类号： H03M5/145 , G11B20/1426 , G11B2020/1446 , G11B2020/1473 , G11B2220/90 , G11B2220/956
摘要： An unencoded m-bit data input sequence is divided into a block of n bits and a block of m−n bits. The block of n bits is divided into a first set of n+1 encoded bits, wherein at least one of P1 subblocks of the first set satisfies a G, M and I constraints. The first set of n+1 encoded bits is mapped into a second set of n+1 encoded bits wherein at least one of P2 subblocks of the second set gives rise to at least Q1 transitions after 1/(1+D2) preceding. A second set of n+1 encoded bits is divided into P3 encoded subblocks and the P3 encoded subblocks are interleaved among (m−n)/s unencoded symbols so as to form a (m+1)-bit output sequence codeword which is then stored on a data storage medium.
摘要翻译：未编码的m位数据输入序列被分成n位块和m-n位块。 n位的块被划分为第一组n + 1个编码比特，其中第一组的P1个子块中的至少一个满足G，M和I约束。第一组n + 1个编码比特被映射到n + 1编码比特的第二组，其中第二组的P2个子块中的至少一个在1 /（1 + D 2）之后产生至少Q1个转换）。第二组n + 1编码比特被分成P3编码子块，并且P3编码子块在（mn）/ s个未编码符号之间进行交织，以形成第（m + 1）比特的输出序列码字，然后存储在数据存储介质。

104. 发明申请

US20070238173A1 Laminate of Cultured Human Corneal Endothelial Cells Layer and Method for Manufacturing Same 有权
标题翻译：培养的人角膜内皮细胞层的层压体及其制造方法相同
公开(公告)号：US20070238173A1
公开(公告)日：2007-10-11
申请号：US10590184
申请日：2005-02-17
申请人： Satoru Yamagami , Tatsuya Mimura , Shiro Amano , Keisuke Tanaka , Shunji Hattori , Shinkichi Irie , Yasuhiro Osakabe
发明人： Satoru Yamagami , Tatsuya Mimura , Shiro Amano , Keisuke Tanaka , Shunji Hattori , Shinkichi Irie , Yasuhiro Osakabe
IPC分类号： C12N5/08 , C12N5/02
CPC分类号： C12N5/0621 , C12N2533/54
摘要： A laminate comprising a transparent collagen I type sheet and a human corneal endothelial cell culture layer provided on the sheet. An endothelial cell culture layer laminate usable in transplantation is provided.
摘要翻译：包含透明胶原I型片和设置在片上的人角膜内皮细胞培养层的层压体。提供可用于移植的内皮细胞培养层层压体。

105. 发明授权

US07201997B2 Non-aqueous electrolyte battery 失效
标题翻译：非水电解液电池
公开(公告)号：US07201997B2
公开(公告)日：2007-04-10
申请号：US10240809
申请日：2001-12-25
申请人： Sumihito Ishida , Keisuke Tanaka , Hideo Kaiya , Shoichiro Watanabe
发明人： Sumihito Ishida , Keisuke Tanaka , Hideo Kaiya , Shoichiro Watanabe
IPC分类号： H01M6/12 , H01M6/46
CPC分类号： H01M2/06 , H01M2/0207 , H01M2/0285 , H01M2/1673 , H01M2/348 , H01M6/12 , H01M6/181 , H01M10/04 , H01M10/052 , H01M10/0565 , H01M10/0585
摘要： Disclosed is a non-aqueous electrolyte battery comprising: a flat outer jacket comprising a metal sheet and having two primary flat portions facing each other; two active material layers of a first polarity respectively carried on inner surfaces of the flat portions; an electrode plate of a second polarity disposed in a position facing with each of the active material layers; and a separator layer interposed between each of the active material layers and the electrode plate of a second polarity, with the outer jacket serving as a current collector of the active material layers.
摘要翻译：公开了一种非水电解质电池，包括：平坦的外护套，其包括金属片，并具有彼此面对的两个初级平坦部分; 分别承载在平坦部分的内表面上的第一极性的两个活性材料层; 设置在与每个活性材料层相对的位置处的第二极性的电极板; 以及插入在每个活性物质层和第二极性的电极板之间的隔离层，外护套用作活性物质层的集电体。

106. 发明授权

US07170564B2 On-screen display device 有权
标题翻译：屏幕显示设备
公开(公告)号：US07170564B2
公开(公告)日：2007-01-30
申请号：US10752509
申请日：2004-01-08
申请人： Toshihiko Maruoka , Keisuke Tanaka
发明人： Toshihiko Maruoka , Keisuke Tanaka
IPC分类号： H04N5/445 , G09G5/22 , G09G5/36 , G06T11/00 , H04N9/76 , H04N9/74
CPC分类号： G09G5/225 , G09G5/222 , H04N5/44504
摘要： This invention provides an on-screen display device that can display an increased number of types of characters without enlarging the video RAM area. This on-screen display device includes a character generator ROM that has n (n is an integer that is equal to or larger than 3) areas, a flag holding unit that outputs an area designation flag for designating a desired number of desired areas among the n areas in the character generator ROM, a display character setting unit that writes a desired character code at a predetermined position in a video RAM, and a display control unit that reads the character code from the video RAM, reads font data corresponding to the read character code from an area in the character generator ROM, which is indicated by the area designation flag outputted from the flag holding unit, and outputs an on-screen output signal using the font data.
摘要翻译：本发明提供一种屏幕显示装置，其可以在不放大视频RAM区域的情况下显示增加数量的字符类型。该屏幕显示装置包括具有n（n为3以上的整数）区域的字符发生器ROM，标志保持单元，输出用于指定所需区域的期望数量的区域指定标志字符发生器ROM中的n个区域，在视频RAM中的预定位置写入期望的字符代码的显示字符设置单元和从视频RAM读取字符代码的显示控制单元读取与读取的字体数据相对应的字体数据字符代码从字符发生器ROM中的区域指示，由标志保持单元输出的区域指定标志指示，并使用字体数据输出屏幕上的输出信号。

107. 发明申请

US20060096320A1 Process of forming thin film on glass substrate and glass substrate coated with thin film 审中-公开
标题翻译：在玻璃基板和涂有薄膜的玻璃基板上形成薄膜的工艺
公开(公告)号：US20060096320A1
公开(公告)日：2006-05-11
申请号：US10532875
申请日：2003-10-30
申请人： Shigeki Obana , Keisuke Tanaka , Hirokazu Tanaka , Akira Tsujimoto , Hiroshi Tamaru , Kouichi Takahama
发明人： Shigeki Obana , Keisuke Tanaka , Hirokazu Tanaka , Akira Tsujimoto , Hiroshi Tamaru , Kouichi Takahama
IPC分类号： C03C17/25
CPC分类号： C03C17/007 , C03C17/002 , C03C17/25 , C03C17/256 , C03C2217/21 , C03C2217/213 , C03C2217/23 , C03C2217/45 , C03C2217/477 , C03C2217/478 , C03C2217/71 , C03C2218/112 , C03C2218/113 , C03C2218/36
摘要： A process of forming a functional thin film uniformly on the surface of a large size glass substrate, which is used for construction or the like, and a glass substrate coated with a thin film formed by the above process are provided. A uniform metal oxide thin film is formed by: using large size plate glass produced by the float bath process, in which molten glass is poured into an Sn bath and gradually hardened; and applying by spraying a coating solution containing an alcohol as a solvent and 5% by mass to 15% by mass of water onto the bottom surface of the large size plate glass, which is formed by bringing the molten glass into contact with the Sn bath, while controlling the wettability of the coating solution on the glass substrate.
摘要翻译：提供了在用于构造等的大尺寸玻璃基板的表面上均匀地形成功能性薄膜的方法以及通过上述方法形成的薄膜的玻璃基板。通过以下方式形成均匀的金属氧化物薄膜：使用通过浮法工艺制造的大尺寸平板玻璃，其中将熔融玻璃注入Sn浴中并逐渐硬化; 并将通过使熔融玻璃与Sn浴接触而形成的大尺寸平板玻璃的底面喷涂含有醇作为溶剂的涂布溶液和5质量％〜15质量％的水同时控制涂布溶液在玻璃基板上的润湿性。

108. 发明授权

US07002922B1 Communication network specific charging method and communication network specific charging apparatus 失效
标题翻译：通信网络专用充电方式和通信网络专用充电设备
公开(公告)号：US07002922B1
公开(公告)日：2006-02-21
申请号：US09536052
申请日：2000-03-27
申请人： Masanobu Shigenari , Sachiko Matsui , Ekuo Sato , Tsuyoshi Yamamoto , Makoto Ozawa , Kimi Mizuno , Yasuhiko Matunaga , Keisuke Tanaka
发明人： Masanobu Shigenari , Sachiko Matsui , Ekuo Sato , Tsuyoshi Yamamoto , Makoto Ozawa , Kimi Mizuno , Yasuhiko Matunaga , Keisuke Tanaka
IPC分类号： G01R31/08
CPC分类号： H04L12/1403 , H04L12/14 , H04L12/1457 , H04L43/022 , H04L43/0894 , H04M2215/22
摘要： To charge surely depending on data transmitted through a TCP/IP communication network or the like with a simple configuration. In charging method for data transmission in a communication network in which a plurality of positions are connected to each other through a wide area network, sub-networks being connected to the respective positions through LANs, and sending of data from terminal stations in the sub-networks or receiving of data in the terminal stations being performed, sampling measurements of transmission states of originated data in the LANs and transmission states of incoming data in the LANs are performed in the LANS connected to respective positions, the data of the transmission states subjected to the sampling measurement being periodically transmitted to a predetermined center connected to the communication network, and an amount of charging to each sub-network being decided on the basis of the data of the transmission states transmitted to the center.
摘要翻译：根据具有简单配置的通过TCP / IP通信网络等发送的数据确实进行计费。在通过广域网连接多个位置的通信网络中的数据传输的计费方法中，子网通过LAN连接到各个位置，并且从子站中的子站发送数据，在正在执行的终端站中的网络或数据的接收，在LAN中的始发数据的传输状态的采样测量和LAN中的输入数据的传输状态在连接到各个位置的LANS中执行，传输状态的数据经受采样测量周期性地发送到连接到通信网络的预定中心，并且根据传输到中心的传输状态的数据来决定每个子网的计费量。

109. 发明申请

US20050201139A1 Memory Device 审中-公开
标题翻译：存储设备
公开(公告)号：US20050201139A1
公开(公告)日：2005-09-15
申请号：US11121011
申请日：2005-05-04
申请人： Yasuhiro Shimada , Yoshihisa Kato , Keisuke Tanaka , Daisuke Ueda
发明人： Yasuhiro Shimada , Yoshihisa Kato , Keisuke Tanaka , Daisuke Ueda
IPC分类号： H01L27/105 , G11C11/22 , H01L21/02 , H01L21/316 , H01L21/8246 , H01L27/10 , H01L27/108 , H01L27/115
CPC分类号： H01L27/11507 , H01L21/31691 , H01L27/11502 , H01L28/55
摘要： A memory device includes memory cells each having a capacitor including a lower electrode, a ferroelectric film and an upper electrode which are formed in this order over a substrate made of silicon. The ferroelectric film is selectively grown on the lower electrode. Such selective formation of the ferroelectric film on the lower electrode having a desired shape prevents a damaged portion from occurring in the ferroelectric film, thus making it possible to downsize the memory cells.
摘要翻译：存储器件包括存储单元，每个存储单元具有在由硅制成的衬底上依次形成的下电极，铁电体膜和上电极的电容器。在下电极上选择性地生长强电介质膜。在具有所需形状的下电极上选择性地形成铁电体膜，可防止在铁电体膜中发生损坏部分，从而可以使存储单元小型化。

110. 发明申请

US20050045990A1 Semiconductor device and method for fabricating the same 审中-公开
标题翻译：半导体装置及其制造方法
公开(公告)号：US20050045990A1
公开(公告)日：2005-03-03
申请号：US10950532
申请日：2004-09-28
申请人： Keisaku Nakao , Akihiro Matsuda , Yasufumi Izutsu , Toyoji Ito , Takumi Mikawa , Toru Nasu , Yoshihisa Nagano , Keisuke Tanaka , Toshie Kutsunai
发明人： Keisaku Nakao , Akihiro Matsuda , Yasufumi Izutsu , Toyoji Ito , Takumi Mikawa , Toru Nasu , Yoshihisa Nagano , Keisuke Tanaka , Toshie Kutsunai
IPC分类号： H01L21/02 , H01L21/8242 , H01L21/00
CPC分类号： H01L28/55
摘要： The semiconductor device of the invention includes a capacitor device, which is formed on a substrate and which includes a capacitive lower electrode, a capacitive insulating film made of an insulating metal oxide film and a capacitive upper electrode. An interlevel insulating film having an opening reaching the capacitive upper electrode is formed over the capacitor device. A metal interconnection including a titanium film is formed over the interlevel insulating film so as to be electrically connected to the capacitive upper electrode through the opening. An anti-diffusion film having conductivity is formed between the capacitive upper electrode and the metal interconnection for preventing titanium atoms composing the titanium film of the metal interconnection from passing through the capacitive upper electrode and diffusing into the capacitive insulating film.
摘要翻译：本发明的半导体器件包括形成在基板上的电容器器件，其包括电容式下电极，由绝缘金属氧化物膜制成的电容绝缘膜和电容上电极。在电容器装置上形成具有到达电容上电极的开口的层间绝缘膜。在层间绝缘膜上形成包括钛膜的金属互连，以便通过开口与电容上电极电连接。在电容上电极和金属互连之间形成具有导电性的防扩散膜，以防止构成金属互连的钛膜的钛原子通过电容上电极并扩散到电容绝缘膜。

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