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101. 发明授权

US4649248A Annealing furnace for annealing magnetic cores in a magnetic field 失效
标题翻译：用于在磁场中退火磁芯的退火炉
公开(公告)号：US4649248A
公开(公告)日：1987-03-10
申请号：US741255
申请日：1985-06-04
申请人： Hiroshi Yamaguchi , Teruaki Tanaka , Masatake Hirai , Tadashi Kohketsu , Masahiro Matsumoto , Kenji Kawate
发明人： Hiroshi Yamaguchi , Teruaki Tanaka , Masatake Hirai , Tadashi Kohketsu , Masahiro Matsumoto , Kenji Kawate
IPC分类号： C21D1/04 , H01F41/02 , H05B6/02 , H05B6/10
CPC分类号： H01F41/0213 , C21D1/04
摘要： An annealing furnace for annealing magnetic cores therein. Each magnetic core is placed on a tray on which the core is transferred on rollers through the furnace along with a conductive magnetizing conductor or shaft positioned inside the core and a current source for supplying a current to the conductive magnetizing shaft. After the tray, core and current source pass through the furnace, the annealed core is removed from the tray, and the tray and current source are returned to the furnace entrance for reuse with another core.
摘要翻译：一种用于退火磁芯的退火炉。每个磁芯被放置在托盘上，在该托盘上，核心在辊子上传送通过炉子以及位于芯体内部的导电磁化导体或轴以及用于向导电磁化轴提供电流的电流源。在托盘，核心和电流源通过炉子之后，将退火的芯从托盘移除，并将托盘和电流源返回到炉入口以与另一个核重新使用。

102. 发明授权

US4270959A Method for the heat treatment of metal strip 失效
标题翻译：金属条的热处理方法
公开(公告)号：US4270959A
公开(公告)日：1981-06-02
申请号：US63508
申请日：1979-08-03
申请人： Masahiro Matsumoto , Kenji Kawate , Hidenobu Jinnouchi
发明人： Masahiro Matsumoto , Kenji Kawate , Hidenobu Jinnouchi
IPC分类号： C21D9/56 , C21D9/573 , C21D9/63 , F27B9/28 , C22F1/04 , C21D9/46
CPC分类号： C21D9/63 , C21D9/56 , F27B9/28
摘要： During the process in which a metal strip is moved in a floating condition, the metal strip is first heated, and thereafter cooled and annealed. In heating the metal strip, the metal strip is heated so that a central portion widthwise thereof is increased in temperature more than that of both edges widthwise thereof. The metal strip is heated in a manner as described whereby a great thermal stress is not introduced in the metal strip and consequently, there is less possibility to produce wrinkles in the metal strip.
摘要翻译：在金属带在浮动状态下移动的过程中，首先加热金属带，然后冷却和退火。在加热金属带时，金属带被加热，使得其宽度方向的中心部分的温度比其宽度方向的两个边缘的温度高。金属条以如上所述的方式加热，由此在金属带中不引入大的热应力，因此在金属带中产生皱纹的可能性较小。

103. 发明授权

US08843325B2 Individual information determining method, individual information determining device, electronic apparatus, and individual information determining program 有权
标题翻译：个人信息确定方法，个人信息确定装置，电子装置和个人信息确定程序
公开(公告)号：US08843325B2
公开(公告)日：2014-09-23
申请号：US13430285
申请日：2012-03-26
申请人： Kazuhiro Nakagawa , Hatsume Uno , Masahiro Matsumoto , Tomoko Katsuhara , Yuuki Watanabe
发明人： Kazuhiro Nakagawa , Hatsume Uno , Masahiro Matsumoto , Tomoko Katsuhara , Yuuki Watanabe
IPC分类号： A61B5/00 , G01N33/72 , G01N33/94 , G01N33/53 , G06F19/00
CPC分类号： G01N33/53 , G01N33/721 , G01N33/9413 , G06F19/00 , G16H50/30
摘要： Disclosed in an individual information determining method in which individual information of a subject is determined based on one or a plurality of pieces of biomolecule data collected from a surface of a body surface of the subject.
摘要翻译：公开在个人信息确定方法中，其中基于从受试者的体表的表面收集的一个或多个生物分子数据确定受试者的个体信息。

104. 发明授权

US08504762B2 Flash memory storage device with data interface 有权
标题翻译：具有数据接口的闪存存储设备
公开(公告)号：US08504762B2
公开(公告)日：2013-08-06
申请号：US13486132
申请日：2012-06-01
申请人： Masahiro Matsumoto , Takayuki Okinaga , Shuichiro Azuma , Shigeru Takemura , Yasuyuki Koike , Kazuki Makuni
发明人： Masahiro Matsumoto , Takayuki Okinaga , Shuichiro Azuma , Shigeru Takemura , Yasuyuki Koike , Kazuki Makuni
IPC分类号： G06F12/00 , G06F13/00 , G06F13/28
CPC分类号： G06F11/1441 , G06F3/0616 , G06F3/0656 , G06F3/0679 , G06F12/0246 , G06F2212/7211
摘要： A storage device realizing an improvement in rewrite endurance of a nonvolatile memory and an improvement in data transfer rate of write and read operations is provided including a nonvolatile memory; a volatile memory for storing file management information of the nonvolatile memory; a controller for controlling the nonvolatile memory and the volatile memory; and a power supply maintaining unit for supplying power to the nonvolatile memory, the volatile memory, or the controller upon power shutdown. The controller reads the file management information in the nonvolatile memory upon power-on and writes the same in the volatile memory, and read and write operations are performed based on the file management information in the volatile memory, and the file management information in the volatile memory is written in the nonvolatile memory upon power shutdown.
摘要翻译：提供一种实现非易失性存储器的重写耐久性的改进并且提高写入和读取操作的数据传输速率的存储装置，其包括非易失性存储器; 用于存储非易失性存储器的文件管理信息的易失性存储器; 用于控制非易失性存储器和易失性存储器的控制器; 以及电源维持单元，用于在电源关闭时向非易失性存储器，易失性存储器或控制器供电。控制器在通电时读取非易失性存储器中的文件管理信息，并将其写入易失性存储器，并且基于易失性存储器中的文件管理信息执行读写操作，并且在易失性存储器中执行文件管理信息存储器在电源关闭时写入非易失性存储器。

105. 发明授权

US08302476B2 Angular velocity measuring device 失效
标题翻译：角速度测量装置
公开(公告)号：US08302476B2
公开(公告)日：2012-11-06
申请号：US12376244
申请日：2006-09-15
申请人： Masahiro Matsumoto , Yasushi Okada , Hisao Sonobe
发明人： Masahiro Matsumoto , Yasushi Okada , Hisao Sonobe
IPC分类号： G01C19/56
CPC分类号： G01C19/5726 , G01C19/5747
摘要： Disclosed herein is an angular velocity measuring device including: first and second oscillators elastically supported on a substrate; an elastic connecting beam elastically connecting the first and the second oscillator; and an oscillating means for oscillating the first and the second oscillator for differential oscillation, wherein a viscous force generating means for suppressing in-phase oscillation of the first and the second oscillator is incorporated into the elastic connecting beam.
摘要翻译：本文公开了一种角速度测量装置，包括：弹性地支撑在基板上的第一和第二振荡器; 弹性连接梁弹性连接第一和第二振荡器; 以及用于振荡用于差动振荡的第一和第二振荡器的振荡装置，其中用于抑制第一和第二振荡器的同相振荡的粘性力产生装置并入弹性连接梁中。

106. 发明申请

US20120239865A1 STORAGE DEVICE 有权
标题翻译：储存设备
公开(公告)号：US20120239865A1
公开(公告)日：2012-09-20
申请号：US13486132
申请日：2012-06-01
申请人： Masahiro Matsumoto , Takayuki Okinaga , Shuichiro Azuma , Shigeru Takemura , Yasuyuki Koike , Kazuki Makuni
发明人： Masahiro Matsumoto , Takayuki Okinaga , Shuichiro Azuma , Shigeru Takemura , Yasuyuki Koike , Kazuki Makuni
IPC分类号： G06F12/00
CPC分类号： G06F11/1441 , G06F3/0616 , G06F3/0656 , G06F3/0679 , G06F12/0246 , G06F2212/7211
摘要： A storage device realizing an improvement in rewrite endurance of a nonvolatile memory and an improvement in data transfer rate of write and read operations is provided including a nonvolatile memory; a volatile memory for storing file management information of the nonvolatile memory; a controller for controlling the nonvolatile memory and the volatile memory; and a power supply maintaining unit for supplying power to the nonvolatile memory, the volatile memory, or the controller upon power shutdown. The controller reads the file management information in the nonvolatile memory upon power-on and writes the same in the volatile memory, and read and write operations are performed based on the file management information in the volatile memory, and the file management information in the volatile memory is written in the nonvolatile memory upon power shutdown.
摘要翻译：提供一种实现非易失性存储器的重写耐久性的改进并且提高写入和读取操作的数据传输速率的存储装置，其包括非易失性存储器; 用于存储非易失性存储器的文件管理信息的易失性存储器; 用于控制非易失性存储器和易失性存储器的控制器; 以及电源维持单元，用于在电源关闭时向非易失性存储器，易失性存储器或控制器供电。控制器在通电时读取非易失性存储器中的文件管理信息，并将其写入易失性存储器，并且基于易失性存储器中的文件管理信息执行读写操作，并且在易失性存储器中执行文件管理信息存储器在电源关闭时写入非易失性存储器。

107. 发明授权

US08232650B2 Semiconductor device and method for manufacturing the same 失效
标题翻译：半导体装置及其制造方法
公开(公告)号：US08232650B2
公开(公告)日：2012-07-31
申请号：US13180202
申请日：2011-07-11
申请人： Hiroyuki Chibahara , Atsushi Ishii , Naoki Izumi , Masahiro Matsumoto
发明人： Hiroyuki Chibahara , Atsushi Ishii , Naoki Izumi , Masahiro Matsumoto
IPC分类号： H01L23/48
CPC分类号： H01L23/02 , H01L23/522 , H01L23/585 , H01L2924/0002 , H01L2924/00
摘要： A semiconductor device wherein destruction of a sealing ring caused by cracking of an interlayer dielectric film is difficult to occur, as well as a method for manufacturing the semiconductor device, are provided. A first laminate comprises first interlayer dielectric films having a first mechanical strength. A second laminate comprises second interlayer dielectric films having a mechanical strength higher than the first mechanical strength. A first region includes first metallic layers and vias provided within the first laminate. A second region includes second metallic layers and vias provided within the second laminate. When seen in plan, the second region overlaps at least a part of the first region, is not coupled with the first region by vias, and sandwiches the second interlayer dielectric film between it and the first region.
摘要翻译：提供了难以发生由层间电介质膜的破裂引起的密封环破坏的半导体装置，以及半导体装置的制造方法。第一层压板包括具有第一机械强度的第一层间绝缘膜。第二层压体包括具有高于第一机械强度的机械强度的第二层间介电膜。第一区域包括设置在第一层压体内的第一金属层和通孔。第二区域包括设置在第二层压体内的第二金属层和通孔。当在平面图中看到时，第二区域与第一区域的至少一部分重叠，不通过通孔与第一区域耦合，并且在其与第一区域之间夹住第二层间电介质膜。

108. 发明授权

US08097948B2 Semiconductor device and manufacturing method of semiconductor device 有权
标题翻译：半导体器件及半导体器件的制造方法
公开(公告)号：US08097948B2
公开(公告)日：2012-01-17
申请号：US12880520
申请日：2010-09-13
申请人： Takeshi Furusawa , Daisuke Kodama , Masahiro Matsumoto , Hiroshi Miyazaki
发明人： Takeshi Furusawa , Daisuke Kodama , Masahiro Matsumoto , Hiroshi Miyazaki
IPC分类号： H01L23/48 , H01L21/44
CPC分类号： H01L21/76843 , H01L21/76805 , H01L21/76844 , H01L21/76877 , H01L21/76886 , H01L23/5226 , H01L23/53238 , H01L23/53295 , H01L2924/0002 , H01L2924/00
摘要： To provide a semiconductor device having a structure in which a barrier metal film containing nitrogen is formed in a connection surface between a copper alloy wiring and a via, in which the electric resistance between the copper alloy wiring and the via can be prevented from rising, and the electric resistance can be prevented from varying. A semiconductor device according to the present invention comprises a first copper alloy wiring, a via and a first barrier metal film. The first copper alloy wiring is formed in an interlayer insulation film and contains a predetermined additive element in a main component Cu. The via is formed in an interlayer insulation film and electrically connected to the upper surface of the first copper alloy wiring. The first barrier metal film is formed so as to be in contact with the first copper alloy wiring in the connection part between the first copper alloy wiring and the via and contains nitrogen. The predetermined additive element reacts with nitrogen to form a high-resistance part. In addition, the concentration of the predetermined additive element is not more than 0.04 wt %.
摘要翻译：为了提供一种半导体器件，其具有在铜合金布线和通孔之间的连接面上形成含有氮的阻挡金属膜的结构，其中可以防止铜合金布线和通孔之间的电阻上升，并且可以防止电阻变化。根据本发明的半导体器件包括第一铜合金布线，通孔和第一阻挡金属膜。第一铜合金布线形成在层间绝缘膜中，并且在主要成分Cu中含有预定的添加元素。通孔形成在层间绝缘膜中并与第一铜合金布线的上表面电连接。第一阻挡金属膜形成为与第一铜合金布线和通孔之间的连接部分中的第一铜合金布线接触并且包含氮。预定的添加元素与氮反应形成高电阻部分。此外，预定添加元素的浓度不大于0.04重量％。

109. 发明申请

US20110238363A1 Apparatus for Detecting Angular Velocity and Acceleration 审中-公开
标题翻译：用于检测角速度和加速度的装置
公开(公告)号：US20110238363A1
公开(公告)日：2011-09-29
申请号：US13030079
申请日：2011-02-17
申请人： Toshiaki NAKAMURA , Masahiro Matsumoto , Satoshi Asano
发明人： Toshiaki NAKAMURA , Masahiro Matsumoto , Satoshi Asano
IPC分类号： G01C19/56
CPC分类号： G01P21/00 , G01C19/56 , G01C19/5776 , G01C25/00 , G01P15/08 , G01P15/18
摘要： An apparatus for detecting angular velocity and acceleration having diagnosing units for diagnosing the function of detecting angular velocity; diagnosing units for diagnosing the function of detecting acceleration; a diagnosing unit for a DSP or a MPU; multiple ROMs storing the same data; a diagnosing unit for the ROMs; a diagnosing unit for a RAM; a unit for outputting the outputs of the angular velocity sensor, the acceleration sensor and the results of diagnoses all together in response to an output command from an external device; and a unit for sending error detection codes along with the sensor outputs and the result of diagnoses when the sensor outputs and the results of diagnoses are outputted together.
摘要翻译：一种用于检测角速度和加速度的装置，具有用于诊断检测角速度的功能的诊断单元; 诊断加速度检测功能诊断单元; 用于DSP或MPU的诊断单元; 存储相同数据的多个ROM; ROM的诊断单元; 用于RAM的诊断单元; 响应于来自外部设备的输出命令，输出角速度传感器，加速度传感器的输出和所有诊断结果的单元; 以及用于发送错误检测码以及传感器输出以及传感器输出时的诊断结果和诊断结果一起输出的单元。

110. 发明授权

US08004192B2 Black paste and plasma display panel and method for preparation thereof 有权
标题翻译：黑色浆料和等离子体显示面板及其制备方法
公开(公告)号：US08004192B2
公开(公告)日：2011-08-23
申请号：US11932208
申请日：2007-10-31
申请人： Masahiro Matsumoto , Nobuo Matsumura , Junji Mata , Yuichiro Iguchi
发明人： Masahiro Matsumoto , Nobuo Matsumura , Junji Mata , Yuichiro Iguchi
IPC分类号： H01J17/49
CPC分类号： H01J11/12 , B32B15/00 , C03C8/14 , H01J9/02 , H01J11/44 , H01J2211/444
摘要： A black paste contains an organic component and an inorganic powder containing a glass powder and a cobalt oxide. A plasma display panel having a black layer made from the black paste, and methods for fabricating the black paste, the plasma display are also provided.
摘要翻译：黑色糊状物含有有机成分和含有玻璃粉末和氧化钴的无机粉末。还提供了具有由黑色浆料制成的黑色层的等离子体显示面板和用于制造黑色浆料的方法，等离子体显示器。

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