会员体验
专利管家(专利管理)
工作空间(专利管理)
风险监控(情报监控)
数据分析(专利分析)
侵权分析(诉讼无效)
联系我们
交流群
官方交流:
QQ群: 891211   
微信请扫码    >>>
现在联系顾问~
热词
    • 101. 发明申请
    • Method of forecasting and detecting polishing endpoint and the device thereof and real time film thickness monitoring method and the device thereof
    • 抛光终点预测与检测方法及其装置及实时膜厚监测方法及其装置
    • US20080290865A1
    • 2008-11-27
    • US11975195
    • 2007-10-18
    • Takashi FujitaToshiyuki YokoyamaKeita Kitade
    • Takashi FujitaToshiyuki YokoyamaKeita Kitade
    • G01B7/06
    • H01L22/26B24B37/013B24B49/04B24B49/105H01L21/3212H01L2924/0002H01L2924/00
    • An object of the present invention is to provide a method of forecasting and detecting a polishing endpoint and the device thereof and a real time film thickness monitoring method and the device thereof capable of suppressing a Joule heat loss to the minimum due to an eddy current, and precisely forecasting and detecting the polishing endpoint, and moreover, precisely calculating a remaining film amount to be removed and a polishing rate and the like on the spot so as to be able to accurately evaluate whether the predetermined conductive film is appropriately removed.To achieve the above described object, the present invention brings an inductor in a high frequency inductor type sensor close to the predetermined conductive film, and monitors a flux change induced in the predetermined conductive film by the flux formed by the inductor 36, and based on a flux change when a film thickness during the polishing becomes a film thickness corresponding to a skin depth decided with the material of the predetermined conductive film as a factor, detects a film thickness reference point, and forecasts the polishing endpoint from this film thickness reference point, and provides a method of calculating on the spot a polishing rate and a remaining film amount to be removed.
    • 本发明的目的是提供一种预测和检测抛光终点及其装置的方法及其实时膜厚监测方法及其能够由于涡电流而将焦耳热损失抑制到最小的装置, 精确地预测和检测抛光终点,并且还准确地计算待去除的剩余膜量和现场抛光速率等,以便能够准确地评估预定导电膜是否被适当地去除。 为了实现上述目的,本发明使电感器在靠近预定导电膜的高频电感器型传感器中带动,并且通过由电感器36形成的磁通来监测在预定导电膜中感应的磁通量变化,并且基于 当抛光期间的膜厚度变为与由预定导电膜的材料确定的皮肤深度相对应的皮肤深度的膜厚度时的通量变化,检测膜厚度参考点,并且从该膜厚参考点预测抛光终点 ,并且提供一种现场计算要除去的抛光速率和剩余膜量的方法。
    • 102. 发明申请
    • Wafer polish monitoring method and device
    • 晶圆抛光监测方法及装置
    • US20080242197A1
    • 2008-10-02
    • US12008350
    • 2008-01-10
    • Takashi FujitaToshiyuki YokoyamaKeita Kitade
    • Takashi FujitaToshiyuki YokoyamaKeita Kitade
    • B24B49/00
    • B24B49/10H01L22/26
    • The present invention aims to provide a wafer polish monitoring method and device for detecting the end point of the polishing of a conductive film with high precision and accuracy by monitoring the variation of the film thickness of the conductive film without adverse influence of slurry or the like after the film thickness of the conductive film decreases to an extremely small film thickness defined by the skin depth. To achieve this objective, the present invention provides a wafer polish monitoring method by which a high-frequency transmission path is formed in a portion facing the conductive film on the surface of the wafer, the polishing removal state of the conductive film is evaluated based at least on the transmitted electromagnetic waves passing through the high-frequency transmission path or the reflected electromagnetic waves that are reflected without passing through the high-frequency transmission path, and the end point of the polishing removal and the point equivalent to the end point of the polishing removal are detected.
    • 本发明的目的在于提供一种晶片抛光剂监测方法和装置,其通过监测导电膜的膜厚变化而不受浆料等的不利影响,高精度和高精度地检测导电膜的抛光终点 在导电膜的膜厚度降低到由皮肤深度限定的非常小的膜厚度之后。 为了达到上述目的,本发明提供了一种在晶片表面上与导电膜相对的部分形成高频传输路径的晶片抛光监视方法,基于 对穿过高频传输路径的透射电磁波或反射的电磁波至少不经过高频传输路径,抛光去除的终点和等同于 检测到抛光去除。
    • 106. 发明授权
    • Pad conditioner, pad conditioning method, and polishing apparatus
    • 垫调节剂,垫调理方法和抛光装置
    • US07354337B2
    • 2008-04-08
    • US11467240
    • 2006-08-25
    • Takashi Fujita
    • Takashi Fujita
    • B24B21/18
    • B24B53/017B24B29/005
    • The present invention provides: a pad conditioner for dressing a surface of a polishing pad which is used in a polishing apparatus for polishing works, comprising a bending or deflecting or elastic member and a supporting section to support a base end of the bending or deflecting or elastic member, wherein upon contact of a vicinity of a tip end of the bending or deflecting or elastic member with the polishing pad, the bending or deflecting or elastic member elastically deforms, so that a pressure necessary to condition the pad is generated; a polishing apparatus using the pad conditioner; and a pad conditioning method using the same, in order to evenly condition a polishing pad of an elastic body by following a surface of the polishing pad.
    • 本发明提供一种用于修整用于抛光工件的抛光装置中的抛光垫的表面的垫调节器,包括弯曲或偏转或弹性构件和支撑部分,以支撑弯曲或偏转的基端, 弹性构件,其中当弯曲或偏转或弹性构件的尖端附近与抛光垫接触时,弯曲或偏转或弹性构件弹性变形,从而产生调节垫所需的压力; 使用该垫调节剂的研磨装置; 以及使用其的垫调节方法,以便通过跟随抛光垫的表面来均匀地调节弹性体的抛光垫。
    • 107. 发明申请
    • Polishing end point detection method utilizing torque change and device thereof
    • 利用扭矩变化的抛光终点检测方法及其装置
    • US20080071414A1
    • 2008-03-20
    • US11900155
    • 2007-09-10
    • Takashi FujitaSatoshi HasegawaShinji OsadaSoushi YamadaTakuji Atarashi
    • Takashi FujitaSatoshi HasegawaShinji OsadaSoushi YamadaTakuji Atarashi
    • G06F19/00
    • B24B49/16B24B37/013H01L21/3212H01L22/26
    • Change in a torque waveform is monitored while removing continuously-varied periodic noise in real time, and the change in the torque waveform caused purely by the wafer state is detected by separating noise components while removing the noise not caused by the wafer state such as drift noise cased by dressing conditions and the polishing pad state, thereby reliably detecting a polishing end point at high precision in the wafer state when polishing is finished. A polishing end point detection device utilizing torque change having a torque measurement means for measuring torque, a periodic component analysis means for analyzing periodic components in data by subjecting Fourier transformation to the measured data, an average processing time calculation means for calculating moving average processing time for removing periodic noise components based on the analyzed periodic components, an average processing means for correcting the waveform by performing averaging process based on the moving average processing time calculated in real time for the data, and an end point detection means for detecting the polishing end point of a predetermined film based on change in the corrected torque waveform is provided.
    • 在实时切换连续变化的周期性噪声的同时监视扭矩波形的变化,并且仅通过晶片状态引起的转矩波形的变化通过分离噪声分量来检测,同时消除由晶片状态引起的噪声(例如漂移) 通过修整条件和抛光垫状态进行包围的噪声,从而在抛光结束时在晶片状态下可靠地高精度地检测抛光终点。 一种利用扭矩变化的抛光终点检测装置,具有用于测量扭矩的扭矩测量装置,用于通过对所测量的数据进行傅里叶变换来分析数据中的周期分量的周期性分量分析装置,用于计算移动平均处理时间的平均处理时间计算装置 用于基于分析的周期分量去除周期性噪声分量;平均处理装置,用于通过基于对于数据实时计算的移动平均处理时间进行平均处理来校正波形;以及终点检测装置,用于检测抛光端 提供基于校正转矩波形的变化的预定胶片的点。