专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

101. 发明授权

US08661186B2 Nonvolatile memory device, access device, and nonvolatile memory system 有权
标题翻译：非易失性存储器件，存取器件和非易失性存储器系统
公开(公告)号：US08661186B2
公开(公告)日：2014-02-25
申请号：US12374672
申请日：2007-07-26
申请人： Takuji Maeda , Toshiyuki Honda , Masahiro Nakanishi , Tadashi Ono , Tatsuya Adachi , Isao Kato
发明人： Takuji Maeda , Toshiyuki Honda , Masahiro Nakanishi , Tadashi Ono , Tatsuya Adachi , Isao Kato
IPC分类号： G11C16/10 , G06F12/02 , G06F3/06
CPC分类号： G06F3/0664 , G06F3/0605 , G06F3/061 , G06F3/0679 , G06F12/0246
摘要： An access device 100 includes an access speed information part 112 for informing an access speed required for data recording by the access device 100 to a nonvolatile memory device 200. The nonvolatile memory device includes an access condition determination part 212 for determining an access condition required for meeting the informed access speed and an access area determination unit 213 for determining an access area according to the determined access condition. The access device 100 informs the required access speed to the nonvolatile memory device 200 in advance so that the access condition determination part 212 and the access area determination part 213 in the nonvolatile memory device 200 realize data recording which meets the access speed informed in advance upon the data recording. Thus, it is possible to access all the nonvolatile memory devices at a desired speed regardless of difference in characteristics of the recording speed of each of the nonvolatile memory devices.
摘要翻译：访问装置100包括访问速度信息部分112，用于将访问装置100的数据记录所需的访问速度通知给非易失性存储装置200.非易失性存储装置包括访问条件确定部分212，用于确定访问条件满足通知访问速度的访问区域确定单元213，用于根据确定的访问条件确定访问区域。访问装置100预先向非易失性存储装置200通知所需的访问速度，使得非易失性存储装置200中的访问条件确定部212和访问区域确定部213实现满足预先通知的访问速度的数据记录数据记录。因此，无论每个非易失性存储器件的记录速度的特性差如何，都可以以所需的速度访问所有非易失性存储器件。

102. 发明授权

US08209504B2 Nonvolatile memory device, nonvolatile memory system, and access device having a variable read and write access rate 有权
标题翻译：非易失性存储器件，非易失性存储器系统和具有可变读取和写入访问速率的访问设备
公开(公告)号：US08209504B2
公开(公告)日：2012-06-26
申请号：US12523756
申请日：2008-01-25
申请人： Masahiro Nakanishi , Isao Kato , Masayuki Toyama , Tatsuya Adachi , Hirofumi Nakagaki , Takuji Maeda
发明人： Masahiro Nakanishi , Isao Kato , Masayuki Toyama , Tatsuya Adachi , Hirofumi Nakagaki , Takuji Maeda
IPC分类号： G06F13/00
CPC分类号： G06F1/206 , G11C7/04 , G11C16/102
摘要： When an access device accesses a nonvolatile memory device, the nonvolatile memory device or the access device detects or calculates a temperature T of the nonvolatile memory device. A temperature-adaptive control part of the nonvolatile memory device controls an access rate to a nonvolatile memory on the basis of the temperature T. Accordingly, the control part controls the rate so that the temperature T of the nonvolatile memory devices cannot exceed a limit temperature Trisk. In this manner, a nonvolatile memory system can eliminate a risk of a burn when ejecting the semiconductor memory device and can read and write data at a high speed.
摘要翻译：当访问设备访问非易失性存储设备时，非易失性存储设备或访问设备检测或计算非易失性存储设备的温度T. 非易失性存储器件的温度自适应控制部分基于温度T控制对非易失性存储器的访问速率。因此，控制部分控制速率使得非易失性存储器件的温度T不能超过极限温度 Trisk。以这种方式，非易失性存储器系统可以在喷射半导体存储器件时消除燃烧的危险，并且可以高速读取和写入数据。

103. 发明申请

US20110264842A1 MEMORY CONTROLLER, NONVOLATILE MEMORY DEVICE, ACCESS DEVICE, AND NONVOLATILE MEMORY SYSTEM 审中-公开
标题翻译：存储器控制器，非易失性存储器件，访问器件和非易失性存储器系统
公开(公告)号：US20110264842A1
公开(公告)日：2011-10-27
申请号：US12527882
申请日：2008-06-12
申请人： Masahiro Nakanishi , Takuji Maeda
发明人： Masahiro Nakanishi , Takuji Maeda
IPC分类号： G06F12/02
CPC分类号： G11C16/349
摘要： A lifetime parameter generation part 128 generates a lifetime parameter related to a lifetime of a nonvolatile memory device 110. When the remaining lifetime has become short, a mode switching part 129 switches a read-write mode of a read-write control part 124 from a rewritable mode to a write once mode and notifies an access device 100 that the mode has been switched to the write once mode. Thus, a user can easily recognize the moment when an apparatus having the built-in nonvolatile memory cannot be used, and, immediately before the lifetime is over, the mode can be automatically switched to the write once mode in which writing can be carried out only once.
摘要翻译：寿命参数生成部分128生成与非易失性存储器件110的寿命有关的寿命参数。当剩余寿命变短时，模式切换部分129将读写控制部分124的读写模式从可重写模式到一次写入模式，并且将访问设备100通知模式已被切换到一次写入模式。因此，用户可以容易地识别具有内置非易失性存储器的装置不能使用的时刻，并且在生命周期结束之前，该模式可以自动切换到可以执行写入的一次写入模式只有一次。

104. 发明申请

US20100005225A1 NONVOLATILE MEMORY DEVICE, NONVOLATILE MEMORY SYSTEM, AND HOST DEVICE 审中-公开
标题翻译：非易失性存储器件，非易失性存储器系统和主机器件
公开(公告)号：US20100005225A1
公开(公告)日：2010-01-07
申请号：US12374671
申请日：2007-07-26
申请人： Toshiyuki Honda , Masahiro Nakanishi , Takuji Maeda
发明人： Toshiyuki Honda , Masahiro Nakanishi , Takuji Maeda
IPC分类号： G06F12/00 , G06F12/02
CPC分类号： G06F3/0643 , G06F3/0607 , G06F3/0679
摘要： A nonvolatile memory device has a file system manager and manages the file system of a file to be recorded. The nonvolatile memory device measures time by obtaining time information from outside in each writing file data or based on time information preliminarily obtained. At the time of writing file data, management information of the file system is configured based on the time information at the time. Thus, the time information can be stored in a file entry table, and the time information can be used as file management information. The nonvolatile memory system with high user's convenience can be provided.
摘要翻译：非易失性存储器件具有文件系统管理器并管理要被记录的文件的文件系统。非易失性存储器件通过从每个写入文件数据中的外部获取时间信息或者基于预先获得的时间信息来测量时间。在写入文件数据时，基于当时的时间信息配置文件系统的管理信息。因此，可以将时间信息存储在文件输入表中，并且可以将时间信息用作文件管理信息。可以提供用户便利性高的非易失性存储器系统。

105. 发明授权

US07394951B2 Optical signal level control apparatus 有权
标题翻译：光信号电平控制装置
公开(公告)号：US07394951B2
公开(公告)日：2008-07-01
申请号：US10436076
申请日：2003-05-13
申请人： Takuji Maeda , Hiroaki Tomofuji , Yuji Shimada
发明人： Takuji Maeda , Hiroaki Tomofuji , Yuji Shimada
IPC分类号： G02B6/12
CPC分类号： H04B10/2931 , H04J14/0201 , H04J14/0212 , H04J14/0221
摘要： In an optical signal level control apparatus used in a WDM system, the amount of circuitry per wavelength is reduced. Optical power level is detected on the output side of a variable optical attenuator, and the amount of attenuation in the variable optical attenuator is adjusted so that the output level becomes equal to a constant value L1. At this time, if the detected level is lower than a threshold value Th0 or Th-d, it is determined that a signal off condition has occurred, and the amount of attenuation is set to a constant value A1. The amount of attenuation, A1, is chosen to be sufficiently larger than the amount of attenuation used in the output level constant control but small enough to be able to detect the restoration of the signal. When the amount of attenuation is being held at the constant value A1, if the output level is restored to a level higher than the threshold value Th0 or Th1 (Th1
摘要翻译：在WDM系统中使用的光信号电平控制装置中，每波长的电路量减少。在可变光衰减器的输出侧检测到光功率电平，并且调节可变光衰减器中的衰减量，使得输出电平变为等于常数值L1。此时，如果检测到的电平低于阈值Th0或Th-d，则确定已经发生信号关闭状态，并将衰减量设定为常数值A1。衰减量A1被选择为足够大于在输出电平常数控制中使用的衰减量，但足够小以能够检测信号的恢复。当衰减量保持在恒定值A1时，如果输出电平恢复到高于阈值Th0或Th1（Th1

106. 发明申请

US20070217794A1 Method for measuring optical characteristics and system thereof 有权
标题翻译：测量光学特性的方法及其系统
公开(公告)号：US20070217794A1
公开(公告)日：2007-09-20
申请号：US11502535
申请日：2006-08-11
申请人： Takeshi Sakamoto , Kosuke Komaki , Yuji Shimada , Takuji Maeda
发明人： Takeshi Sakamoto , Kosuke Komaki , Yuji Shimada , Takuji Maeda
IPC分类号： H04B10/00
CPC分类号： H04B10/07
摘要： During initial start-up of an optical communication system, an ASE reference span loss is calculated based on transmitting power and received power of ASE light generated by an optical amplifier, and an OSC reference span loss is calculated based on the transmitting power and the received power of OSC light. During normal operation of the optical communication system, a span loss is calculated using the OSC light, and an amount of change in the span loss representing a difference between the span loss and the OSC reference span loss is calculated. A current span loss between a transmitting station and a receiving station is calculated by adding the amount of change in the span loss to the ASE reference span loss.
摘要翻译：在光通信系统的初始启动期间，基于由光放大器产生的ASE光的发射功率和接收功率来计算ASE参考跨度损耗，并且基于发射功率和接收到的功率来计算OSC参考跨度损耗 OSC灯的功率。在光通信系统的正常工作期间，使用OSC灯计算跨度损耗，并且计算表示跨度损耗与OSC参考跨度损耗之间的差异的跨度损耗的变化量。通过将跨度损耗的变化量与ASE参考跨度损耗相加来计算发送站和接收站之间的电流跨度损耗。

107. 发明申请

US20070033335A1 Semiconductor memory card access apparatus, a computer-readable recording medium, an initialization method, and a semiconductor memory card 有权
标题翻译：半导体存储卡存取装置，计算机可读记录介质，初始化方法和半导体存储卡
公开(公告)号：US20070033335A1
公开(公告)日：2007-02-08
申请号：US11546407
申请日：2006-10-12
申请人： Takuji Maeda , Teruto Hirota
发明人： Takuji Maeda , Teruto Hirota
IPC分类号： G06F12/00 , G06F9/00
CPC分类号： G06F3/0644 , G06F3/0613 , G06F3/0616 , G06F3/064 , G06F3/0643 , G06F3/0652 , G06F3/0679 , G06F12/0223 , G06F12/0246 , G06F12/1433 , G06F2212/1016 , G06F2212/2022 , G06F2212/7202 , G11B20/00086
摘要： A predetermined number of erasable blocks positioned at a start of a volume area in a semiconductor memory card are provided so as to include volume management information. A user area following the volume management information includes a plurality of clusters. A data length NOM of an area from a master boot record & partition table sector to a partition boot sector is determined so that the plurality of clusters in the user area are not arranged so as to straddle erasable block boundaries. Since cluster boundaries and erasable block boundaries in the user area are aligned, there is no need to perform wasteful processing in which two erasable blocks are erased to rewrite one cluster.
摘要翻译：设置位于半导体存储卡的体积区域开始处的预定数量的可擦除块，以便包括卷管理信息。跟随卷管理信息的用户区域包括多个集群。确定从主引导记录和分区表扇区到分区引导扇区的区域的数据长度NOM，使得用户区域中的多个簇不被布置为跨越可擦除块边界。由于用户区域中的簇边界和可擦除块边界被对准，所以不需要执行浪费的处理，其中两个可擦除块被擦除以重写一个簇。

108. 发明申请

US20050235098A1 Semiconductor memory device, memory controller and memory access device 有权
标题翻译：半导体存储器件，存储器控制器和存储器存取器件
公开(公告)号：US20050235098A1
公开(公告)日：2005-10-20
申请号：US11048046
申请日：2005-02-02
申请人： Kazuaki Tamura , Tomoaki Izumi , Tetsushi Kasahara , Masahiro Nakanishi , Kiminori Matsuno , Takuji Maeda
发明人： Kazuaki Tamura , Tomoaki Izumi , Tetsushi Kasahara , Masahiro Nakanishi , Kiminori Matsuno , Takuji Maeda
IPC分类号： G06K19/07 , G06F12/00 , G06F12/02 , G06F12/06 , G06K17/00
CPC分类号： G06F12/0246 , G11C2029/0409
摘要： A semiconductor memory card 1 includes a user data area 21 and a management information area 22, in a data storing unit 2. According to a writing test command from a memory access device 6, a memory controller 3 writes data into a user data storing area and measures the writing rate, and transmits the measurement result to the memory access device 6 via a host interface unit 4. Thereby, the memory access device 6 can recognize the writing rate.
摘要翻译：在数据存储单元2中，半导体存储卡1包括用户数据区21和管理信息区22。根据来自存储器访问装置6的写入测试命令，存储器控制器3将数据写入用户数据存储区域并测量写入速率，并且经由主机接口单元4将测量结果发送到存储器访问设备6。由此，存储器访问装置6能够识别写入速度。

109. 发明申请

US20050060513A1 Semiconductor memory card access apparatus, a computer-readable recording medium, an initialization method, and a semiconductor memory card 有权
标题翻译：半导体存储卡存取装置，计算机可读记录介质，初始化方法和半导体存储卡
公开(公告)号：US20050060513A1
公开(公告)日：2005-03-17
申请号：US10960004
申请日：2004-10-08
申请人： Takuji Maeda , Teruto Hirota
发明人： Takuji Maeda , Teruto Hirota
IPC分类号： G06F12/14 , G06F3/06 , G06F12/00 , G06F12/02 , G06F21/24 , G11B20/00 , G11B20/12
CPC分类号： G06F3/0644 , G06F3/0613 , G06F3/0616 , G06F3/064 , G06F3/0643 , G06F3/0652 , G06F3/0679 , G06F12/0223 , G06F12/0246 , G06F12/1433 , G06F2212/1016 , G06F2212/2022 , G06F2212/7202 , G11B20/00086
摘要： A predetermined number of erasable blocks positioned at a start of a volume area in a semiconductor memory card are provided so as to include volume management information. A user area following the volume management information includes a plurality of clusters. A data length NOM of an area from a master boot record & partition table sector to a partition boot sector is determined so that the plurality of clusters in the user area are not arranged so as to straddle erasable block boundaries. Since cluster boundaries and erasable block boundaries in the user area are aligned, there is no need to perform wasteful processing in which two erasable blocks are erased to rewrite one cluster.
摘要翻译：设置位于半导体存储卡的体积区域开始处的预定数量的可擦除块，以便包括卷管理信息。跟随卷管理信息的用户区域包括多个集群。确定从主引导记录和分区表扇区到分区引导扇区的区域的数据长度NOM，使得用户区域中的多个簇不被布置为跨越可擦除块边界。由于用户区域中的簇边界和可擦除块边界被对准，所以不需要执行浪费的处理，其中两个可擦除块被擦除以重写一个簇。

110. 发明授权

US06823422B2 Semiconductor memory card access apparatus, a computer-readable recording medium, an initialization method, and a semiconductor memory card 有权
公开(公告)号：US06823422B2
公开(公告)日：2004-11-23
申请号：US10445185
申请日：2003-05-27
申请人： Takuji Maeda , Teruto Hirota
发明人： Takuji Maeda , Teruto Hirota
IPC分类号： G06F1200
CPC分类号： G06F3/0644 , G06F3/0613 , G06F3/0616 , G06F3/064 , G06F3/0643 , G06F3/0652 , G06F3/0679 , G06F12/0223 , G06F12/0246 , G06F12/1433 , G06F2212/1016 , G06F2212/2022 , G06F2212/7202 , G11B20/00086
摘要： A predetermined number of erasable blocks positioned at a start of a volume area in a semiconductor memory card are provided so as to include volume management information. A user area following the volume management information includes a plurality of clusters. A data length NOM of an area from a master boot record & partition table sector to a partition boot sector is determined so that the plurality of clusters in the user area are not arranged so as to straddle erasable block boundaries. Since cluster boundaries and erasable block boundaries in the user area are aligned, there is no need to perform wasteful processing in which two erasable blocks are erased to rewrite one cluster.

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式