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    • 102. 发明授权
    • Stereoscopic microscope
    • 立体显微镜
    • US4704012A
    • 1987-11-03
    • US788785
    • 1985-10-18
    • Yoshimi KohayakawaTakashi Masuda
    • Yoshimi KohayakawaTakashi Masuda
    • A61B3/13G02B21/22
    • A61B3/132G02B21/22
    • A stereoscopic microscope has an objective opposed to an object to be examined, having its optic axis in a horizontal plane and projecting a parallel light beam, a pair of imaging optical systems for right and left eyes disposed rearwardly of the objective, a pair of optical devices having an even number of reflecting surfaces inclining the optic axes of the imaging optical systems so as to provide a predetermined angle of depression and a predetermined convergence angle, an erector rotatable about the optic axes inclined by the optical devices for the adjustment of the eye width, and a pair of eyepieces for enlarging and observing the image of the object to be examined therethrough.
    • 立体显微镜具有与待检查物体相对的目的,其光轴处于水平面并投射平行光束,一对用于右眼和左眼的成像光学系统位于物镜的后方,一对光学 具有偶数个反射表面的装置,其使成像光学系统的光轴倾斜以提供预定的凹陷角度和预定的会聚角,可绕由光学装置倾斜的光轴旋转的矫正器,用于调节眼睛 宽度和一对目镜,用于放大和观察待检查对象的图像。
    • 106. 发明授权
    • Method for manufacturing silicon carbide semiconductor device
    • 碳化硅半导体器件的制造方法
    • US08404574B2
    • 2013-03-26
    • US13142147
    • 2009-10-26
    • Takashi Masuda
    • Takashi Masuda
    • H01L21/283
    • H01L29/872H01L21/0485H01L21/0495H01L29/0619H01L29/1608H01L29/47H01L29/6606
    • Provided is a method for manufacturing a silicon carbide semiconductor device which is capable of obtaining the silicon carbide semiconductor device having a high forward current and a low reverse leakage current by a simple method. The method for manufacturing a silicon carbide semiconductor device includes the steps of: forming a film made of a first electrode material on one surface of a silicon carbide substrate, and forming an ohmic electrode by performing heat treatment at a temperature range of 930 to 950° C.; and forming a film made of a second electrode material on the other surface of the silicon carbide substrate, and forming a Schottky electrode by performing heat treatment.
    • 提供一种能够通过简单的方法获得具有高正向电流和低反向泄漏电流的碳化硅半导体器件的制造碳化硅半导体器件的方法。 制造碳化硅半导体器件的方法包括以下步骤:在碳化硅衬底的一个表面上形成由第一电极材料制成的膜,并通过在930至950℃的温度范围内进行热处理形成欧姆电极 C。; 以及在所述碳化硅衬底的另一表面上形成由第二电极材料制成的膜,并通过进行热处理形成肖特基电极。
    • 110. 发明申请
    • OPTICAL LOW PASS FILTER AND IMAGING DEVICE USING THE SAME
    • 光学低通滤光片和成像装置
    • US20090169126A1
    • 2009-07-02
    • US12161648
    • 2007-01-16
    • Takashi MasudaMasafumi SeiMasahiko HondaHidetoshi KubotaKenichiro Waki
    • Takashi MasudaMasafumi SeiMasahiko HondaHidetoshi KubotaKenichiro Waki
    • G06K9/40
    • H04N9/045H01L27/14621H04N5/2254H04N5/23245
    • An optical low pass filter (2) is formed, for example, by a birefringent plate so as to control the light beam separation width, thereby changing the cut-off frequency according to an imaging mode. The number of pixels of an imaging element (5) is set greater than the number of pixels corresponding to the dynamic image display resolution. In a still image capturing mode, the light beam separation width is set narrower so that the resolution of the imaging element (5) can be used as it is while suppressing generation of a false color to a certain degree. On the other hand, in a dynamic image capturing mode, the light beam separation width is set wider so that a high-frequency component corresponding to an unnecessary resolution component for an output image signal can be cut off and suppression of the false color can be performed strongly as compared to the still image capturing mode.
    • 光学低通滤波器(2)例如由双折射板形成,以便控制光束分离宽度,从而根据成像模式改变截止频率。 成像元件(5)的像素数被设置为大于与动态图像显示分辨率对应的像素数。 在静止图像拍摄模式中,光束分离宽度被设定得更窄,从而可以在一定程度上抑制伪色的产生的同时可以使用成像元件(5)的分辨率。 另一方面,在动态图像拍摄模式中,将光束分离宽度设定得较宽,从而可以切断对应于输出图像信号的不必要的分辨率成分的高频分量,并且可以抑制伪色 与静止图像捕获模式相比,强烈地执行。