专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

101. 发明授权

US5800195A Dewing-trouble-prevented water-proof connector 失效
标题翻译：防雨防水连接器
公开(公告)号：US5800195A
公开(公告)日：1998-09-01
申请号：US653477
申请日：1996-05-24
申请人： Takayoshi Endo , Kazuhisa Ishizaki , Satoshi Yamada , Mitsuhiro Matsumoto
发明人： Takayoshi Endo , Kazuhisa Ishizaki , Satoshi Yamada , Mitsuhiro Matsumoto
IPC分类号： H01R13/42 , H01R13/52
CPC分类号： H01R13/5221
摘要： In a dewing-trouble-prevented water-proof connector assembly, its male connector is engaged with its female connector in such a manner that the front end portion of the inner housing of the male connector is engaged with the front end portion of the inner housing of the female connector in such a manner that the inner cylindrical surface of the front end portion of the male connector covers the outer cylindrical surface of the front end portion of the female connector, and the front end portion of the outer housing of the male connector is engaged with the front end portion of the outer housing of the female connector in such a manner that the front end portion of the outer housing of the male connector covers the front end portion of the outer housing of the female connector. In the connector assembly, an inner packing which is set in close contact with the inner cylindrical surface of the front end portion of the inner housing of the male connector is mounted on the outer cylindrical surface of the inner housing of the female connector, while an outer packing which is set in close contact with the inner cylindrical surface of the outer housing of the male connector is mounted on the outer cylindrical surface of the outer housing of the female connector.
摘要翻译：在防止排水故障的防水连接器组件中，其阳连接器与其阴连接器接合，使得阳连接器的内壳的前端部与内壳体的前端部接合阴连接器的前端部的内圆筒面覆盖阴连接器的前端部的外圆筒形表面，并且阳连接器的外壳的前端部分与阴连接器的外壳体的前端部分接合，使得阳连接器的外壳体的前端部分覆盖阴连接器的外壳体的前端部分。在连接器组件中，与阴连接器的内壳体的前端部的内圆柱表面紧密接触的内部衬垫安装在阴连接器的内壳体的外圆柱表面上，而与阳连接器的外壳体的内圆柱表面紧密接触的外包装安装在阴连接器的外壳体的外圆柱表面上。

102. 发明授权

US5725391A Insulating structure for a shielded connector 失效
标题翻译：屏蔽连接器的绝缘结构
公开(公告)号：US5725391A
公开(公告)日：1998-03-10
申请号：US729155
申请日：1996-10-11
申请人： Satoki Masuda , Mitsuhiro Matsumoto , Hidehiko Kuboshima
发明人： Satoki Masuda , Mitsuhiro Matsumoto , Hidehiko Kuboshima
IPC分类号： H01R13/648 , H01R13/52 , H01R13/56 , H01R13/627 , H01R13/6582 , H01R13/6593 , H01R9/05
CPC分类号： H01R13/6582 , H01R13/6593 , H01R13/5205 , H01R13/567 , H01R13/6272
摘要： To make the fitting of a pair of connectors smooth and keep an insulation distance between a terminal and a metal shell large and thus improve the fitting characteristics and the reliability of a shielded connector, a rib projects over the end surface of one of a male or a female connector so that the rib lies between a metal shell projecting over the end of the male connector and a male terminal projecting over the end surface. A groove corresponds to the rib and is formed in the top end surface of the other of the male and female connectors.
摘要翻译：为了使一对连接器的安装平滑，并且保持端子和金属外壳之间的绝缘距离较大，从而提高了屏蔽连接器的配合特性和可靠性，肋条突出在男性或阴连接器，使得肋位于突出在阳连接器的端部上的金属壳体和突出在端表面上的阳端子之间。凹槽对应于肋，并且形成在阳连接器和阴连接器中的另一个的顶端表面中。

103. 发明授权

US5592502A Semiconductor laser element and method for adjusting self-induced oscillation intensity of the same 失效
标题翻译：半导体激光元件及其调节自身振荡强度的方法
公开(公告)号：US5592502A
公开(公告)日：1997-01-07
申请号：US327452
申请日：1994-10-21
申请人： Mitsuhiro Matsumoto , Ken Ohbayashi
发明人： Mitsuhiro Matsumoto , Ken Ohbayashi
IPC分类号： H01S5/00 , H01S5/065 , H01S5/068 , H01S5/20 , H01S5/22 , H01S5/223 , H01S5/323 , H01S3/18
CPC分类号： H01S5/2231 , H01S5/0658 , H01S5/2004 , H01S5/221 , H01S5/2232 , H01S5/32316
摘要： A semiconductor laser element includes: a semiconductor laminated structure for emitting a laser light, including an active layer interposed between a first cladding layer of a first-conductivity type and a second cladding layer of a second-conductivity type, the first cladding layer and the semiconductor layer having lower refractive indices than that of the active layer; and a current light confining means including a stripe-shaped semiconductor layer of the second-conductivity type formed on a surface of the second cladding layer on a side opposite to the active layer, for confining a laser driving current and the laser light in a region of the active layer corresponding to the stripe-shaped semiconductor layer, wherein the refractive index of the first cladding layer is larger than that of the second cladding layer in the semiconductor laminated structure, and the semiconductor laminated structure includes at least one semiconductor layer of the first-conductivity type having a lower refractive index than that of the first cladding layer, disposed between the first cladding layer and the active layer.
摘要翻译：半导体激光元件包括：发射激光的半导体层叠结构，包括介于第一导电类型的第一包层和第二导电类型的第二包层之间的有源层，第一包层和半导体层的折射率低于有源层的折射率; 以及电流限制装置，包括在与有源层相反的一侧形成在第二包层的表面上的第二导电类型的条形半导体层，用于将激光驱动电流和激光限制在区域所述半导体层叠结构中的所述第一包覆层的折射率比所述第二包层的折射率大，所述半导体层叠结构具有至少一个所述半导体层叠结构的半导体层，第一导电型，其具有比第一包层更低的折射率，设置在第一包层和有源层之间。

104. 发明授权

US5260231A Method for the production of a semiconductor laser 失效
标题翻译：半导体激光器的制造方法
公开(公告)号：US5260231A
公开(公告)日：1993-11-09
申请号：US998436
申请日：1992-12-30
申请人： Hidenori Kawanishi , Taiji Morimoto , Shinji Kaneiwa , Hiroshi Hayashi , Nobuyuki Miyauchi , Seiki Yano , Mitsuhiro Matsumoto , Kazuaki Sasaki , Masaki Kondo , Takehiro Shiomoto , Saburo Yamamoto
发明人： Hidenori Kawanishi , Taiji Morimoto , Shinji Kaneiwa , Hiroshi Hayashi , Nobuyuki Miyauchi , Seiki Yano , Mitsuhiro Matsumoto , Kazuaki Sasaki , Masaki Kondo , Takehiro Shiomoto , Saburo Yamamoto
IPC分类号： H01S5/02 , H01S5/028 , H01L21/20
CPC分类号： H01S5/0281 , H01S5/028 , H01S5/0201 , H01S5/0282 , H01S5/0283 , Y10S148/095
摘要： A semiconductor laser device is disclosed which emits laser light from a facet. The semiconductor laser device comprises a multi-layered structure formed on a semiconductor substrate, the multi-layered structure having an AlGaAs active layer for laser oscillation, and a protective film formed on the facet, wherein a film containing sulfur is provided between the facet and the protective film.
摘要翻译：公开了从小面发射激光的半导体激光器件。半导体激光器件包括形成在半导体衬底上的多层结构，具有用于激光振荡的AlGaAs有源层的多层结构和形成在该刻面上的保护膜，其中，在该面和保护膜。

105. 发明授权

US4939737A Scanning apparatus with refracting area of variable refractive index 失效
$Scanning apparatus with refracting area of variable refractive index$
标题翻译：具有可折射率折射面积的扫描仪
公开(公告)号：US4939737A
公开(公告)日：1990-07-03
申请号：US156263
申请日：1988-02-16
申请人： Sadayoshi Matsui , mototaka Taneya , Mitsuhiro Matsumoto
发明人： Sadayoshi Matsui , mototaka Taneya , Mitsuhiro Matsumoto
IPC分类号： G02F1/29 , G02F1/295 , H01S5/00 , H01S5/062 , H01S5/40
CPC分类号： G02F1/295 , H01S5/4068 , H01S5/06243 , H01S5/4075
摘要： A scanning apparatus with a refracting function comprising a laser beam oscillating area, one or more refracting areas with a waveguide having different refractive indexes, wherein an electric field is applied to the waveguide of the refracting area, by which the changes in the refractive index of the waveguide of the refracting area are attained so that laser beams from the laser beam oscillating area undergo refraction while they pass through the waveguide of the refracting area.

106. 发明授权

US4856015A Semiconductor laser array device 失效
标题翻译：半导体激光阵列器件
公开(公告)号：US4856015A
公开(公告)日：1989-08-08
申请号：US203469
申请日：1988-06-07
申请人： Sadayoshi Matsui , Mototaka Taneya , Mitsuhiro Matsumoto , Hiroyuki Hosoba
发明人： Sadayoshi Matsui , Mototaka Taneya , Mitsuhiro Matsumoto , Hiroyuki Hosoba
IPC分类号： H01S5/00 , H01S5/02 , H01S5/024 , H01S5/40
CPC分类号： H01S5/02461 , H01L24/32 , H01S5/02 , H01S5/4068 , H01L2924/12042
摘要： A semiconductor laser array device has a relatively wide light-emitting area with many semiconductor lasers and a shielding layer selectively disposed with respect to peripheral regions of the light-emitting area such that the rate of heat emission from the center part can be increased relative to that from the peripheral regions. Temperature distribution on the light-emitting area can thus be made uniform and laser light can be emitted from the entire laser emitting area under a phase-synchronized condition.
摘要翻译：半导体激光器阵列器件具有相当宽的发光面积，具有许多半导体激光器和相对于发光区域的周边区域选择性地布置的屏蔽层，使得来自中心部分的热发射速率可以相对于来自周边地区。因此，在相位同步状态下，可以使发光区域的温度分布均匀，从整个激光发射区域发射激光。

107. 发明授权

US4853936A Index guided semiconductor laser device 失效
标题翻译：折射引导半导体激光器件
公开(公告)号：US4853936A
公开(公告)日：1989-08-01
申请号：US181016
申请日：1988-04-13
申请人： Sadayoshi Matsui , Shinji Kaneiwa , Taiji Morimoto , Masahiro Yamaguchi , Mototaka Taneya , Mitsuhiro Matsumoto
发明人： Sadayoshi Matsui , Shinji Kaneiwa , Taiji Morimoto , Masahiro Yamaguchi , Mototaka Taneya , Mitsuhiro Matsumoto
IPC分类号： H01S5/00 , H01S5/10 , H01S5/24
CPC分类号： H01S5/10 , H01S5/24 , H01S5/1064
摘要： An index guided semiconductor laser device comprising a striped optical waveguide in the active layer, at least a part of the wavegide having continuous indentations at the interface between the waveguide and the outside of the waveguide, whereby only laser light of a high-order transverse mode is radiated from the waveguide to the outside of the waveguide and only laser light of the fundamental transverse mode is propagated within the waveguide.
摘要翻译：一种折射率引导半导体激光器件，包括有源层中的带状光波导，波导的至少一部分在波导和波导外侧之间的界面处具有连续的凹陷，从而仅仅是高阶横模的激光从波导辐射到波导的外部，并且只有基本横向模式的激光在波导内传播。

108. 发明授权

US4813051A Semiconductor laser array device 失效
标题翻译：半导体激光阵列器件
公开(公告)号：US4813051A
公开(公告)日：1989-03-14
申请号：US5056
申请日：1987-01-20
申请人： Mototaka Taneya , Mitsuhiro Matsumoto , Hidenori Kawanishi , Sadayoshi Matsui
发明人： Mototaka Taneya , Mitsuhiro Matsumoto , Hidenori Kawanishi , Sadayoshi Matsui
IPC分类号： H01S5/00 , H01S5/22 , H01S5/40 , H01S3/19
CPC分类号： H01S5/4068 , H01S5/22
摘要： A semiconductor laser array device comprising an active waveguide extending from one light-emitting facet to the other light-emitting facet, wherein said active waveguide is composed of a single main portion extending in the oscillation direction from said one light-emitting facet and constituting a loss waveguide, and a plurality of parallel branching portions extending from the end of said main portion to said other light-emitting facet and constituting a real index waveguide.
摘要翻译：一种半导体激光器阵列器件，包括从一个发光小面延伸到另一个发光小面的有源波导，其中所述有源波导由从所述一个发光小面在振荡方向上延伸的单个主要部分构成，损耗波导和从所述主要部分的端部延伸到所述另一个发光小面并且构成实际折射率波导的多个平行分支部分。

109. 发明授权

US4780175A Method for the production of an optical phase-shifting board 失效
标题翻译：光学相移板的制造方法
公开(公告)号：US4780175A
公开(公告)日：1988-10-25
申请号：US113003
申请日：1987-10-26
申请人： Mototaka Taneya , Mitsuhiro Matsumoto , Sadayoshi Matsui
发明人： Mototaka Taneya , Mitsuhiro Matsumoto , Sadayoshi Matsui
IPC分类号： G02B5/18 , G02B6/42 , H01S5/022 , B44C1/22 , C03C15/00 , C03C25/06
CPC分类号： G02B6/4249 , G02B5/1871 , H01S5/005 , H01S5/02248
摘要： A method for the production of an optical phase-shifting board comprising laying two or more layer-elements with different etching rates therebetween upon a substrate and then subjecting the substrate to an etching treatment so as to remove given portions of the layer-element with the highest etching rate that is disposed on the top of the layer-elements, resulting in the optical phase-shifting board, and a method for the fixation of the optical phase-shifting board to the stem comprising disposing molten light-sensitive or thermosetting resin in or on a guiding rail of the stem positioned in front of the light-emitting face of a semiconductor laser device, placing the optical phase-shifting board in or on the guiding rail of the stem, sliding the optical phase-shifting board in or on the guiding rail along the guiding rail while the far-field pattern of the semiconductor laser device is being monitored, stopping the sliding of the optical phase-shifting board in or on the guiding rail at the position where the far-field pattern conforms to a desired pattern, and curing the molten resin in or on the guiding rail to fix the optical phase-shifting board to the stem at said position.
摘要翻译：一种用于制造光学相移板的方法，包括在衬底上铺设两个或更多个具有不同蚀刻速率的层元件，然后对衬底进行蚀刻处理，以便除去所述层元件的给定部分，设置在层元件顶部的最高蚀刻速率，产生光学相移板，以及用于将光学相变板固定到杆的方法，包括将熔融的光敏或热固性树脂置于或者在位于半导体激光装置的发光面前方的杆的导轨上，将光学相移板放置在杆的导轨中或导杆上，将光学相移板滑入或插入沿着导轨的导轨，同时监视半导体激光装置的远场图案，停止光导相移板在导轨中或导轨上的滑动在远场图案符合期望图案的位置处，并且使导轨内或上的熔融树脂固化，以将光学相变板固定在所述位置处的杆上。

110. 发明授权

US4764937A Semiconductor laser array device 失效
标题翻译：半导体激光阵列器件
公开(公告)号：US4764937A
公开(公告)日：1988-08-16
申请号：US893226
申请日：1986-08-05
申请人： Mitsuhiro Matsumoto , Sadayoshi Matsui , Mototaka Taneya , Hidenori Kawanishi
发明人： Mitsuhiro Matsumoto , Sadayoshi Matsui , Mototaka Taneya , Hidenori Kawanishi
IPC分类号： H01S5/00 , H01S5/40 , H01S3/19
CPC分类号： H01S5/4068
摘要： A semiconductor laser array device comprising two or more array portions, which are composed of a plurality of main parallel waveguides with an optical phase coupling in between, and one or more branching portions, each of which is positioned between the array portions and which are composed of two branching waveguides branching symmetrically with regard to the main waveguide direction from each of the main parallel waveguides of the array portions, each of the two branching waveguides positioned at the outer sides of each of the branching portions being disconnected with the adjacent branching waveguides and the other branching waveguides from the main parallel waveguides of one of the array portions being optically connected with the corresponding branching waveguides from the main parallel waveguides of the adjacent array portion.
摘要翻译：一种半导体激光器阵列器件，包括两个或更多个阵列部分，所述阵列部分由多个主平行波导组成，所述多个主平行波导之间具有光学相位耦合，以及一个或多个分支部分，每个分支部分位于阵列部分之间，从阵列部分的每个主平行波导相对于主波导方向对称地分支的两个分支波导，位于每个分支部分的外侧的两个分支波导中的每一个分别与相邻的分支波导断开，来自阵列部分之一的主平行波导的其它分支波导与相邻阵列部分的主平行波导的相应分支波导光学连接。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式