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101. 发明授权

US06639080B2 Pyrazolate copper complexes, and MOCVD of copper using same 失效
公开(公告)号：US06639080B2
公开(公告)日：2003-10-28
申请号：US10061705
申请日：2002-02-01
申请人： Chongying Xu , Thomas H. Baum , Ziyun Wang
发明人： Chongying Xu , Thomas H. Baum , Ziyun Wang
IPC分类号： C07F108
CPC分类号： C23C16/18 , C07F1/08 , C07F7/0803
摘要： Copper pyrazolate precursor compositions useful for the formation of copper in semiconductor integrated circuits, e.g., interconnect metallization in semiconductor device structures, as an adhesive seed layer for plating, for the deposition of a thin-film recording head and for circuitization of packaging components. The copper pyrazolate precursor compositions include fluorinated and non-fluorinated pyrazolate copper (I) complexes and their Lewis base adducts. Such precursors are usefully employed for liquid delivery chemical vapor deposition of copper or copper-containing material on a substrate.

102. 发明授权

US06602549B1 Indium source reagent composition, and use thereof for deposition of indium-containing films on subtrates and ion implantation of indium-doped shallow junction microelectronic structures 失效
标题翻译：铟源试剂组合物及其用于沉积含铟膜的底层和铟掺杂浅结微电子结构的离子注入
公开(公告)号：US06602549B1
公开(公告)日：2003-08-05
申请号：US09609516
申请日：2000-07-03
申请人： Thomas H. Baum , Chongying Xu
发明人： Thomas H. Baum , Chongying Xu
IPC分类号： C23C1618
CPC分类号： H01L21/28556 , C07F5/00 , C23C16/18 , H01L21/26513 , Y10S427/101
摘要： An indium precursor composition having utility for incorporation of indium in a microelectronic device structure, e.g., as an indium-containing film on a device substrate by bubbler or liquid delivery MOCVD techniques, or as a dopant species incorporated in a device substrate by ion implantation techniques. The precursor composition includes a precursor of the formula R1R2InL wherein: R1 and R2 may be same or different and are independently selected from C6-C10 aryl, C6-C10 fluoroaryl, C6-C10 perfluoroaryl, C1-C6 alkyl, C1-C6 fluoroalkyl, or C1-C6 perfluoroalkyl; and L is &bgr;-diketonato or carboxylate. Indium-containing metal films may be formed on a substrate, such as indium-copper metallization, and shallow junction indium ion-implanted structures may be formed in integrated circuitry, using the precursors of the invention.
摘要翻译：铟前体组合物可用于在微电子器件结构中掺入铟，例如通过起泡器或液体输送MOCVD技术作为器件衬底上的含铟膜，或通过离子注入技术掺入器件衬底中的掺杂剂物质。前体组合物包含式R1R2InL的前体，其中R1和R2可以相同或不同并且独立地选自C 6 -C 10芳基，C 6 -C 10氟芳基，C 6 -C 10全氟芳基，C 1 -C 6烷基，C 1 -C 6氟代烷基，或C 1 -C 6全氟烷基; L是β-二酮或羧酸酯。含铟金属膜可以形成在诸如铟 - 铜金属化的衬底上，并且可以使用本发明的前体在集成电路中形成浅结铟离子注入结构。

103. 发明授权

US06346741B1 Compositions and structures for chemical mechanical polishing of FeRAM capacitors and method of fabricating FeRAM capacitors using same 有权
标题翻译： FeRAM电容器的化学机械抛光的组成和结构以及使用其制造FeRAM电容器的方法
公开(公告)号：US06346741B1
公开(公告)日：2002-02-12
申请号：US09200499
申请日：1998-11-25
申请人： Peter C. Van Buskirk , Michael W. Russell , Steven M. Bilodeau , Thomas H. Baum
发明人： Peter C. Van Buskirk , Michael W. Russell , Steven M. Bilodeau , Thomas H. Baum
IPC分类号： H01L2940
CPC分类号： H01L27/1085 , C09G1/02 , C09K3/1463 , H01L21/31053 , H01L21/3212 , H01L27/10852 , H01L27/10861 , H01L28/55 , H01L28/60 , H01L28/75
摘要： An integrated circuit structures formed by chemical mechanical polishing (CMP) process, which comprises a conductive pathway recessed in a dielectric substrate, wherein the conductive pathway comprises conductive transmission lines encapsulated in a transmission-enhancement material, and wherein the conductive pathway is filled sequentially by a first layer of the transmission-enhancement material followed by the conductive transmission line; a second layer of transmission-enhancement material encapsulating the conductive transmission line and contacting the first layer of the transmission-enhancement material, wherein the transmission-enhancement material is selected from the group consisting of high magnetic permeability material and high permittivity material. Such integrated circuit structure may comprise a device structure selected from the group consisting of capacitors, inductors, and resistors. Preferably, the transmission-enhancement material comprises MgMn ferrites, MgMnAl ferrites, barium strontium titanate, lead zirconium titanate, titanium oxide, tantalum oxide, etc.
摘要翻译：通过化学机械抛光（CMP）工艺形成的集成电路结构，其包括凹入电介质基底中的导电通路，其中导电路径包括封装在透射增强材料中的导电传输线，并且其中导电通路依次由传输增强材料的第一层，随后是导电传输线; 传输增强材料的第二层，其封装所述导电传输线并与所述透射增强材料的第一层接触，其中所述透射增强材料选自高磁导率材料和高介电常数材料。这种集成电路结构可以包括从由电容器，电感器和电阻器组成的组中选择的器件结构。优选地，透射增强材料包括MgMn铁氧体，MgMnAl铁氧体，钛酸锶钡，钛酸铅锆，氧化钛，氧化钽等

104. 发明授权

US06344079B1 Alkane and polyamine solvent compositions for liquid delivery chemical vapor deposition 失效
标题翻译：用于液体输送化学气相沉积的烷烃和多胺溶剂组合物
公开(公告)号：US06344079B1
公开(公告)日：2002-02-05
申请号：US09454954
申请日：1999-12-03
申请人： Thomas H. Baum
发明人： Thomas H. Baum
IPC分类号： C09K300
CPC分类号： C07F9/94 , C23C16/18 , C23C16/40 , C23C16/448 , Y10S423/14
摘要： A solvent composition for liquid delivery chemical vapor deposition of metal organic precursors, to form metal-containing films such as SrBi2Ta2O9 (SBT) films for memory devices. An SBT film may be formed using precursors such as Sr(thd)2(pmdeta), Ta(OiPr)4(thd) and Bi(thd)3(pmdeta) which are dissolved in a solvent medium comprising one or more alkanes. Specific alkane solvent compositions may advantageously used for MOCVD of metal organic compound(s) such as &bgr;-diketonate compounds or complexes, compound(s) including alkoxide ligands, and compound(s) including alkyl and/or aryl groups at their outer (molecular) surface, or compound(s) including other ligand coordination species and specific metal constituents.
摘要翻译：用于液体输送化学气相沉积金属有机前体的溶剂组合物，以形成含金属的膜，例如用于存储器件的SrBi2Ta2O9（SBT）膜。可以使用诸如Sr（thd）2（pmdeta），Ta（OiPr）4（thd）和Bi（thd）3（pmdeta）的前体形成SBT膜，它们溶解在包含一种或多种烷烃的溶剂介质中。特定的烷烃溶剂组合物可有利地用于金属有机化合物如β-二酮化合物或络合物的MOCVD，包括烷氧基配体的化合物和在其外部的包括烷基和/或芳基的化合物（分子）表面或包括其它配体配位物质和特定金属成分的化合物。

105. 发明授权

US06204402B1 Indium source reagent compositions, and use thereof for deposition of indium-containing films on substrates and ion implantation of indium-doped shallow junction microelectronics structures 有权
标题翻译：铟源试剂组合物及其在衬底上沉积含铟膜的用途和铟掺杂浅结微电子结构的离子注入
公开(公告)号：US06204402B1
公开(公告)日：2001-03-20
申请号：US09218992
申请日：1998-12-22
申请人： Thomas H. Baum , Chongying Xu
发明人： Thomas H. Baum , Chongying Xu
IPC分类号： C07F500
CPC分类号： H01L21/28556 , C07F5/00 , C23C16/18 , H01L21/26513 , Y10S427/101
摘要： An indium precursor composition having utility for incorporation of indium in a microelectronic device structure, e.g., as an indium-containing film on a device substrate by bubbler or liquid delivery MOCVD techniques, or as a dopant species incorporated in a device substrate by ion implantation techniques. The precursor composition includes a precursor of the formula R1R2InL wherein: R1 and R2 may be same or different and are independently selected from C6-C10 aryl, C6-C10 fluoroaryl, C6-C10 perfluoroaryl, C1-C6 alkyl, C1-C6 fluoroalkyl, or C1-C6 perfluoroalkyl; and L is &bgr;-diketonato or carboxylate. Indium-containing metal films may be formed on a substrate, such as indium-copper metallization, and shallow junction indium ion-implanted structures may be formed in integrated circuitry, using the precursors of the invention.
摘要翻译：铟前体组合物可用于在微电子器件结构中掺入铟，例如通过起泡器或液体输送MOCVD技术作为器件衬底上的含铟膜，或通过离子注入技术掺入器件衬底中的掺杂剂物质。前体组合物包含式R1R2InL的前体，其中R1和R2可以相同或不同并且独立地选自C 6 -C 10芳基，C 6 -C 10氟芳基，C 6 -C 10全氟芳基，C 1 -C 6烷基，C 1 -C 6氟代烷基，或C 1 -C 6全氟烷基; L是β-二酮或羧酸酯。含铟金属膜可以形成在诸如铟 - 铜金属化的衬底上，并且可以使用本发明的前体在集成电路中形成浅结铟离子注入结构。

106. 发明授权

US6146608A Stable hydride source compositions for manufacture of semiconductor devices and structures 失效
标题翻译：用于制造半导体器件和结构的稳定的氢化物源组合物
公开(公告)号：US6146608A
公开(公告)日：2000-11-14
申请号：US977225
申请日：1997-11-24
申请人： Michael A. Todd , Thomas H. Baum , Gautam Bhandari
发明人： Michael A. Todd , Thomas H. Baum , Gautam Bhandari
IPC分类号： C01B4/00 , C01B6/02 , C01B6/06 , C23C16/18 , C23C16/448 , F17C11/00 , H01L21/205 , C01B6/00 , C07F9/90
CPC分类号： C23C16/448 , C01B4/00 , C01B6/02 , C01B6/06 , C23C16/18 , F17C11/00 , H01L21/0237 , H01L21/02538 , H01L21/02549 , H01L21/0262 , F17C2203/0648 , F17C2270/0518 , Y02E60/321
摘要： A metal hydride derivative wherein at least one hydrogen atom is replaced by deuterium (.sup.2.sub.1 H) or tritium (.sup.3.sub.1 H) isotope. The metal constituent of such metal hydride may be a Group III, IV or V metal or a transition metal, e.g., antimony, aluminum, gallium, tin, or germanium. The isotopically stabilized metal hydride derivatives of the invention are useful as metal source compositions for chemical vapor deposition, assisted chemical vapor deposition (e.g., laser-assisted chemical vapor deposition, light-assisted chemical vapor deposition, plasma-assisted chemical vapor deposition and ion-assisted chemical vapor deposition), ion implantation, molecular beam epitaxy, and rapid thermal processing.
摘要翻译：金属氢化物衍生物，其中至少一个氢原子被氘（21H）或氚（31H）同位素代替。这种金属氢化物的金属成分可以是III，IV或V族金属或过渡金属，例如锑，铝，镓，锡或锗。本发明的同位素稳定的金属氢化物衍生物可用作化学气相沉积，辅助化学气相沉积（例如激光辅助化学气相沉积，光辅助化学气相沉积，等离子体辅助化学气相沉积和离子 - 辅助化学气相沉积），离子注入，分子束外延和快速热处理。

107. 发明授权

US6123993A Method and apparatus for forming low dielectric constant polymeric films 失效
标题翻译：用于形成低介电常数聚合物膜的方法和装置
公开(公告)号：US6123993A
公开(公告)日：2000-09-26
申请号：US157966
申请日：1998-09-21
申请人： Chongying Xu , Thomas H. Baum , Ralph J. Carl , Edward A. Sturm
发明人： Chongying Xu , Thomas H. Baum , Ralph J. Carl , Edward A. Sturm
IPC分类号： B05D7/24 , C23C16/448
CPC分类号： B05D1/60 , C23C16/4481
摘要： A method and apparatus for forming a low dielectric constant polymeric film on a substrate, by liquid delivery of a parylene precursor reagent, in the form of an organic solution or a neat liquid, subsequent flash vaporization of the neat liquid or organic solution, pyrolytic "cracking" of the precursor to form the reactive monomer and/or reactive radical species, and condensation and polymerization of the monomer and/or reactive radical species to form a low dielectric constant polymeric film on the substrate. The low dielectric constant polymeric film may comprise a parylene film, formed from a precursor such as [2.2]paracyclophane, an alkyl- and/or halo-substituted derivative thereof, or an analogous compound of a p-xylene derivative.
摘要翻译：一种用于在基底上形成低介电常数聚合物膜的方法和装置，通过以有机溶液或纯液体的形式液体递送聚对二甲苯前体试剂，随后的纯液体或有机溶液闪蒸，热解“ 裂解“前体以形成反应性单体和/或反应性基团物质，以及单体和/或反应性基团物质的缩合和聚合，以在基底上形成低介电常数聚合物膜。低介电常数聚合物膜可以包含由前体例如[2.2]对环烷烃，其烷基和/或卤素取代的衍生物或对二甲苯衍生物的类似化合物形成的对二甲苯膜。

108. 发明授权

US5916359A Alkane and polyamine solvent compositions for liquid delivery chemical vapor deposition 失效
标题翻译：用于液体输送化学气相沉积的烷烃和多胺溶剂组合物
公开(公告)号：US5916359A
公开(公告)日：1999-06-29
申请号：US975372
申请日：1997-11-20
申请人： Thomas H. Baum , Gautam Bhandari
发明人： Thomas H. Baum , Gautam Bhandari
IPC分类号： C09K3/00 , C23C16/18 , C23C16/40 , C23C16/448
CPC分类号： C23C16/409 , C23C16/18 , C23C16/40 , C23C16/448 , C23C16/4481 , Y10S423/14
摘要： A solvent composition useful for liquid delivery chemical vapor deposition of organometallic precursors such as .beta.-diketonate metal precursors. The solvent composition comprises a mixture of solvent species A, B and C in the proportion A:B:C wherein A is from about 3 to about 7 parts by volume, B is from about 2 to about 6 parts by volume, and C is from 0 to about 3 parts by volume, wherein A is a C.sub.6 -C.sub.8 alkane, B is a C.sub.8 -C.sub.12 alkane, and C is a glyme-based solvent (glyme, diglyme, tetraglyme, etc.) or a polyamine. The particular solvent composition including octane, decane and polyamine in an approximate 5:4:1 weight ratio is particularly usefully employed in the formation of SrBi.sub.2 Ta.sub.2 O.sub.9 films.
摘要翻译：用于液体输送化学气相沉积有机金属前体如β-二酮金属前体的溶剂组合物。溶剂组合物包含A：B：C比例的溶剂A，B和C的混合物，其中A为约3至约7体积份，B为约2至约6体积份，C为 0〜约3体积份，其中A为C6-C8烷烃，B为C8-C12烷烃，C为甘醇二甲醚溶剂（甘醇二甲醚，二甘醇二甲醚，四甘醇二甲醚等）或多胺。包含辛烷值，癸烷值和多胺重量比约5:4:1的特定溶剂组合物特别适用于形成SrBi2Ta2O9膜。

109. 发明授权

US5023360A Simplified synthesis of dialkylgold(III) .beta.-diketonates 失效
标题翻译：二烯基（III）β-二酮化合物的简化合成
公开(公告)号：US5023360A
公开(公告)日：1991-06-11
申请号：US517272
申请日：1990-05-01
申请人： Thomas H. Baum , Phillip J. Brock , Daniel J. Dawson
发明人： Thomas H. Baum , Phillip J. Brock , Daniel J. Dawson
IPC分类号： C07F1/12 , C07F1/00
CPC分类号： C07F1/00
摘要： Dialkyl gold(III) .beta.-diketonates are synthesized in a two-step, one-pot process using a gold trihalide, an alkyl lithium compound and a .beta.-diketone.
摘要翻译：二烷基金（III）β-二酮化合物是使用三卤化金，烷基锂化合物和β-二酮在两步一锅法中合成的。

110. 发明授权

US4574095A Selective deposition of copper 失效
标题翻译：选择性沉积铜
公开(公告)号：US4574095A
公开(公告)日：1986-03-04
申请号：US672975
申请日：1984-11-19
申请人： Thomas H. Baum , Frances A. Houle , Carol R. Jones , Caroline A. Kovac
发明人： Thomas H. Baum , Frances A. Houle , Carol R. Jones , Caroline A. Kovac
IPC分类号： C23C18/16 , C23C18/18 , C23C18/20 , C23C18/30 , C23C18/31 , H05K3/18 , B05D3/06 , B05D5/12
CPC分类号： C23C18/1879 , C23C18/1608 , C23C18/1612 , C23C18/182 , C23C18/1831 , C23C18/1868 , C23C18/204 , C23C18/30 , C23C18/38 , H05K3/184 , H05K2203/107
摘要： A process for selectively depositing copper by first selectively depositing palladium seeds by irradiating a palladium compound with light. Following the deposition of the palladium seeds, copper is deposited by an electroless process.
摘要翻译：一种选择性沉积铜的方法，首先通过用光照射钯化合物来选择性地沉积钯种子。在钯种子沉积之后，通过无电镀方法沉积铜。

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