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    • 109. 发明授权
    • Field effect transistor substantially coplanar surface structure
    • 场效应晶体管基本上共面的表面结构
    • US4994893A
    • 1991-02-19
    • US405284
    • 1989-09-11
    • Hiroji OzakiTakahisa EimoriYoshinori TanakaWataru WakamiyaShinichi Satoh
    • Hiroji OzakiTakahisa EimoriYoshinori TanakaWataru WakamiyaShinichi Satoh
    • H01L21/3205H01L21/8242H01L27/10H01L27/108H01L29/417
    • H01L29/41775H01L27/10808
    • A semiconductor device has MOS field effect transistors isolated by a field shield. The field shield has a gate of conductor layers formed spaced apart from each other on a silicon substrate through an insulating film and with the surface thereof being covered with an insulating film. In regions isolated by the field shield, MOS field effect transistors are formed. Each of the MOS field effect transistors has a gate electrode of a conductor layer formed on the silicon substrate through an insulating film and with the surface thereof being covered with an insulating film. An impurity diffused region is formed in a region on the silicon substrate between the gate electrode and the field shield. A portion on an exposed surface of the impurity diffused region between the field shield and the gate electrode is selectively filled with a tungsten buried layer. The tungsten buried layer is formed, flattened relative to the gate electrode and the gate constituting the field shield.
    • 半导体器件具有通过场屏蔽隔离的MOS场效应晶体管。 场屏蔽具有通过绝缘膜在硅衬底上彼此隔开形成的导体层的栅极,并且其表面被绝缘膜覆盖。 在通过场屏蔽隔离的区域中,形成MOS场效应晶体管。 每个MOS场效应晶体管具有通过绝缘膜形成在硅衬底上并且其表面被绝缘膜覆盖的导体层的栅电极。 在栅电极和场屏蔽之间的硅衬底上的区域中形成杂质扩散区域。 在场屏蔽和栅电极之间的杂质扩散区域的暴露表面上的一部分选择性地填充有钨掩埋层。 形成钨掩埋层,相对于构成场屏蔽体的栅电极和栅极变平。