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    • 101. 发明申请
    • FIELD EFFECT TRANSISTOR CONTAINING A WIDE BAND GAP SEMICONDUCTOR MATERIAL IN A DRAIN
    • 含有宽带带隙半导体材料的场效应晶体管
    • US20090121258A1
    • 2009-05-14
    • US11939017
    • 2007-11-13
    • Arvind Kumar
    • Arvind Kumar
    • H01L29/786H01L21/336
    • H01L21/26586H01L29/165H01L29/6653H01L29/66636H01L29/66659H01L29/7833H01L29/7848
    • A field effect transistor comprising a silicon containing body is provided. After formation of a gate dielectric, gate electrode, and a first gate spacer, a drain side trench is formed and filled with a wide band gap semiconductor material. Optionally, a source side trench may be formed and filled with a silicon germanium alloy to enhance an on-current of the field effect transistor. Halo implantation and source and drain ion implantation are performed to form various doped regions. Since the wide band gap semiconductor material as a wider band gap than that of silicon, impact ionization is reduced due to the use of the wide band gap semiconductor material in the drain, and consequently, a breakdown voltage of the field effect transistor is increased compared to transistors employing silicon in the drain region.
    • 提供了包括硅含量体的场效应晶体管。 在形成栅极电介质,栅极电极和第一栅极间隔物之后,形成漏极侧沟槽并填充宽带隙半导体材料。 可选地,可以形成源极沟槽并填充硅锗合金以增强场效应晶体管的导通电流。 进行光晕注入和源极和漏极离子注入以形成各种掺杂区域。 由于宽带隙半导体材料作为比硅的带隙宽的带隙,由于在漏极中使用宽带隙半导体材料,因此冲击电离降低,因此,场效应晶体管的击穿电压比较 涉及在漏极区域中使用硅的晶体管。
    • 102. 发明申请
    • Techniques for Enabling Multiple Vt Devices Using High-K Metal Gate Stacks
    • 使用高K金属栅极堆栈启用多个Vt器件的技术
    • US20090108373A1
    • 2009-04-30
    • US11927964
    • 2007-10-30
    • Martin M. FrankArvind KumarVijay NarayananJeffrey Sleight
    • Martin M. FrankArvind KumarVijay NarayananJeffrey Sleight
    • H01L27/11H01L21/8244
    • H01L27/1104H01L27/11H01L27/1108
    • Techniques for combining transistors having different threshold voltage requirements from one another are provided. In one aspect, a semiconductor device comprises a substrate having a first and a second nFET region, and a first and a second pFET region; a logic nFET on the substrate over the first nFET region; a logic pFET on the substrate over the first pFET region; a SRAM nFET on the substrate over the second nFET region; and a SRAM pFET on the substrate over the second pFET region, each comprising a gate stack having a metal layer over a high-K layer. The logic nFET gate stack further comprises a capping layer separating the metal layer from the high-K layer, wherein the capping layer is further configured to shift a threshold voltage of the logic nFET relative to a threshold voltage of one or more of the logic pFET, SRAM nFET and SRAM pFET.
    • 提供了用于组合彼此具有不同阈值电压要求的晶体管的技术。 在一个方面,一种半导体器件包括具有第一和第二nFET区的衬底以及第一和第二pFET区; 在第一nFET区域上的衬底上的逻辑nFET; 在第一pFET区上的衬底上的逻辑pFET; 位于第二nFET区上的衬底上的SRAM nFET; 以及在第二pFET区上的衬底上的SRAM pFET,每个包括在高K层上具有金属层的栅极堆叠。 逻辑nFET栅极堆叠还包括将金属层与高K层分隔开的覆盖层,其中封盖层还被配置为相对于逻辑pFET中的一个或多个的阈值电压移动逻辑nFET的阈值电压 ,SRAM nFET和SRAM pFET。
    • 105. 发明申请
    • Integrated circuit package resistance measurement
    • 集成电路封装电阻测量
    • US20070080696A1
    • 2007-04-12
    • US11248775
    • 2005-10-11
    • Arvind KumarKambiz Munshi
    • Arvind KumarKambiz Munshi
    • G01R27/08
    • G01R31/3004G01R27/00G01R31/2884G01R31/2896
    • For one embodiment, an integrated circuit includes a node to couple one or more components to the integrated circuit to carry current through a package for the integrated circuit. The integrated circuit also includes a monitor to measure a resistance of the package based at least in part on a reference resistance of the package and a resistance of one or more components that are to carry current through the package. For another embodiment, current through one or more components that are to carry current through a package for an integrated circuit is controlled. A resistance of the package is measured based at least in part on a reference resistance of the package and a resistance of one or more components that are to carry current through the package.
    • 对于一个实施例,集成电路包括将一个或多个组件耦合到集成电路以将电流传送通过集成电路的封装的节点。 集成电路还包括至少部分地基于封装的参考电阻和用于承载电流通过封装的一个或多个部件的电阻来测量封装的电阻的监视器。 对于另一实施例,控制通过用于集成电路的用于承载电流通过封装的一个或多个部件的电流。 封装的电阻至少部分地基于封装的参考电阻和用于承载电流通过封装的一个或多个部件的电阻来测量。
    • 107. 发明申请
    • Fine mapping and application of dna markers linked to a gall midge resistance gene for marker-aided selection in rice
    • US20050183173A1
    • 2005-08-18
    • US10493001
    • 2002-10-16
    • Nagesh SardesaiArvind KumarSuresh Nair
    • Nagesh SardesaiArvind KumarSuresh Nair
    • A01H1/04C07K14/415C12Q1/68C12Q1/6895A01H5/00C12N15/82
    • C07K14/415A01H1/04C12Q1/6811C12Q1/6895C12Q2600/13C12Q2600/156
    • The present invention relates to fine mapping and potential application of dna markers linked to a gall midge resistance gene gm7 for marker-aided selection in rice. Towards this, the present invention discloses a combination of novel sequence characterized amplified region (SCAR) primers for use in assay with the DNA of Rice plants in question. A cross between the gall midge resistant parent, RP2333 carrying the Gm7 gene and susceptible parent Shyamala, is developed and a F5 progeny is raised. A polymorphic band is identified from the F5 progeny, using AFLP that cosegregates with the susceptible phenotype. This band is eluted from the gel and cloned. The cloned AFLP fragment is sequenced and primers are developed for selectively amplifying DNA of susceptible phenotypes, thus differentiating them from the resistant phenotypes. This Gm7 gene linked marker is mapped onto chromosome 4 of rice and is also shown to be linked to Gm2 gene and the blight resistance gene, Xal through fine mapping using Yeast Artificial Chromosomes (YACS) and cosmids. This marker is present in a single copy in the susceptible parent, Shyamala. Primers developed from this marker are able to differentiate between the resistant and susceptible phenotypes in different crosses carrying different gall midge resistance genes. A number of screenings of resistant and susceptible varieties of rice with these primers show consistent polymorphism between them. The use of primers for PCR amplification of DNAs from F3 progenies derived from crosses between three different parental lines and the primers also differentiates the resistant phenotypes from the susceptible one. The primers of the present invention therefore have a great use in marker assisted selection as they show polymorphism between resistant and susceptible plants and therefore between plants with or without gall midge resistance genes.
    • 110. 发明授权
    • Methods of treating Giardia lamblia
    • 治疗贾第鞭毛虫的方法
    • US5627184A
    • 1997-05-06
    • US454838
    • 1995-05-31
    • David W. BoykinChristine C. DykstraRichard R. TidwellJames E. HallW. David WilsonArvind Kumar
    • David W. BoykinChristine C. DykstraRichard R. TidwellJames E. HallW. David WilsonArvind Kumar
    • G01N33/50A61K31/505A61K31/506C07D239/26C07D307/52C07D307/54C07D307/58C07D403/10C07D403/14C07D405/14C09B23/01C12Q1/68G01N21/78G01N33/52G01N33/58
    • C07D239/26A61K31/505A61K31/506C07D307/54C07D403/10C07D403/14C07D405/14C09B23/0075G01N33/52
    • The present invention provides methods for treating Pneumocystis carinii pneumonia and Giardia lamblia in a subject in need of such treatment. The methods comprises administering to the subject a compound of Formula I: ##STR1## wherein: X and Y are located in the para or meta positions and are selected from the group consisting of H, loweralkyl, loweralkoxy, and ##STR2## wherein: each R.sub.1 is independently selected from the group consisting of H, loweralkyl, alkoxyalkyl, hydroxyalkyl, aminoalkyl, alkylaminoalkyl, cycloalkyl, aryl, or alkylaryl or two R.sub.1 groups together represent C.sub.2 -C.sub.10 alkyl, hydroxyalkyl, or alkylene, or two R.sub.1 groups together represent ##STR3## wherein m is from 1-3 and R.sub.7 is H or --CONHCR.sub.8 NR.sub.9 R.sub.10, wherein R.sub.8 is loweralkyl, and R.sub.9 and R.sub.10 are each independently selected from the group consisting of H and lower alkyl;R.sub.2 is H, hydroxy, loweralkyl, alkoxyalkyl, hydroxyalkyl, aminoalkyl, alkylaminoalkyl, cycloalkyl, aryl, or alkylaryl;n is a number from 0 to 2;R.sub.3 and R.sub.4 are each independently selected from the group consisting of H, loweralkyl, loweralkoxy, alkylaryl, aryl, oxyaryl, aminoalkyl, aminoaryl, or halogen; andR.sub.5 and R.sub.6 are each independently selected from the group consisting of H, loweralkyl, aryl, alkylaryl, aminoalkyl, aminoaryl, halogen, oxyalkyl, oxyaryl, or oxyarylalkyl; or a phamaceutically acceptable salt thereof. The compound of Formula I is administered in an amount effective to treat the condition.The present invention also provides compounds useful for the treatment of Pneumocystis carinii pneumonia and Giardia lamblia.
    • 本发明提供了在需要这种治疗的受试者中治疗卡氏肺囊虫肺炎和贾第鞭毛虫的方法。 所述方法包括向受试者施用式I化合物:其中:X和Y位于对位或间位,并且选自H,低级烷基,低级烷氧基和低级烷氧基, 其中:每个R 1独立地选自H,低级烷基,烷氧基烷基,羟基烷基,氨基烷基,烷基氨基烷基,环烷基,芳基或烷基芳基,或两个R 1基团一起表示C 2 -C 10烷基,羟基烷基或亚烷基或两个R 1基团 一起代表,其中m为1-3,R7为H或-CONHCR8NR9R10,其中R8为低级烷基,R9和R10各自独立地选自H和低级烷基; R2是H,羟基,低级烷基,烷氧基烷基,羟基烷基,氨基烷基,烷基氨基烷基,环烷基,芳基或烷基芳基; n是从0到2的数字; R 3和R 4各自独立地选自H,低级烷基,低级烷氧基,烷基芳基,芳基,氧芳基,氨基烷基,氨基芳基或卤素; 并且R 5和R 6各自独立地选自H,低级烷基,芳基,烷基芳基,氨基烷基,氨基芳基,卤素,氧烷基,氧芳基或氧芳基烷基; 或其药学上可接受的盐。 以有效治疗病症的量施用式I化合物。 本发明还提供了可用于治疗卡氏肺囊虫肺炎和贾第鞭毛虫的化合物。