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91. 再颁专利

USRE48577E1 Vertical cavity surface emitting laser 有权
公开(公告)号：USRE48577E1
公开(公告)日：2021-06-01
申请号：US15895384
申请日：2018-02-13
申请人： Sony Corporation
发明人： Osamu Maeda , Masaki Shiozaki , Takahiro Arakida
IPC分类号： H01S5/00 , H01S5/183 , H01S5/042
摘要： A Vertical Cavity Surface Emitting Laser (VCSEL) capable of providing high output of fundamental transverse mode while preventing oscillation of high-order transverse mode is provided. The VCSEL includes a semiconductor layer including an active layer and a current confinement layer, and a transverse mode adjustment section formed on the semiconductor layer. The current confinement layer has a current injection region and a current confinement region. The transverse mode adjustment section has a high reflectance area and a low reflectance area. The high reflectance area is formed in a region including a first opposed region opposing to a center point of the current injection region. A center point of the high reflectance area is arranged in a region different from the first opposed region. The low reflectance area is formed in a region where the high reflectance area is not formed, in an opposed region opposing to the current injection region.

92. 发明授权

US11022491B2 Compact, power-efficient stacked broadband optical emitters 有权
公开(公告)号：US11022491B2
公开(公告)日：2021-06-01
申请号：US16848126
申请日：2020-04-14
申请人： ams Sensors Singapore Pte. Ltd.
发明人： Peter Riel , Peter Roentgen
IPC分类号： G01J3/10 , H01S5/04 , H01S5/183 , H01S5/40 , G01J3/06 , G01J3/26 , H01S5/00 , H01S5/10 , H01S5/343 , H01S3/094 , H01S5/323 , H01S5/028
摘要： The present disclosure describes broadband optical emission sources that include a stack of semiconductor layers, wherein each of the semiconductor layers is operable to emit light of a different respective wavelength; a light source operable to provide optical pumping for stimulated photon emission from the stack; wherein the semiconductor layers are disposed sequentially in the stack such that a first one of the semiconductor layers is closest to the light source and a last one of the semiconductor layers is furthest from the light source, and wherein each particular one of the semiconductor layers is at least partially transparent to the light generated by the other semiconductor layers that are closer to the light source than the particular semiconductor layer. The disclosure also describes various spectrometers that include a broadband optical emission device, and optionally include a tuneable wavelength filter operable to allow a selected pass through.

93. 发明申请

US20210159672A1 SURFACE EMITTING LASER DEVICE AND LIGHT EMITTING DEVICE INCLUDING SAME 有权
公开(公告)号：US20210159672A1
公开(公告)日：2021-05-27
申请号：US17256546
申请日：2019-06-28
申请人： LG INNOTEK CO., LTD.
发明人： Jeong Sik LEE , Sang Heon HAN , Keun Uk PARK , Yeo Jae YOON
IPC分类号： H01S5/183
摘要： An embodiment relates to a surface-emitting laser device and a light-emitting device including same. A surface-emitting laser device according to the embodiment can include: a first reflective layer; an active area disposed on the first reflective layer; an aperture area disposed on the active area; and a second reflective layer disposed on the aperture area. The second reflective layer can include: a first AlGaAs-based layer comprising Alx1Ga(1-x1)As (wherein 0

94. 发明授权

US10992100B2 Semiconductor device and method 有权
公开(公告)号：US10992100B2
公开(公告)日：2021-04-27
申请号：US16207974
申请日：2018-12-03
申请人： Taiwan Semiconductor Manufacturing Company, Ltd.
发明人： Chen-Hua Yu , An-Jhih Su , Chia-Nan Yuan , Shih-Guo Shen , Der-Chyang Yeh , Yu-Hung Lin , Ming Shih Yeh
IPC分类号： H01S5/02 , H01S5/042 , H01S5/022 , H01S5/183 , H01S5/30 , H01S5/026 , H01S5/323 , H01S5/0234 , H01S5/0237 , H01S5/02234
摘要： In an embodiment, a device includes: a first reflective structure including first doped layers of a semiconductive material, alternating ones of the first doped layers being doped with a p-type dopant; a second reflective structure including second doped layers of the semiconductive material, alternating ones of the second doped layers being doped with a n-type dopant; an emitting semiconductor region disposed between the first reflective structure and the second reflective structure; a contact pad on the second reflective structure, a work function of the contact pad being less than a work function of the second reflective structure; a bonding layer on the contact pad, a work function of the bonding layer being greater than the work function of the second reflective structure; and a conductive connector on the bonding layer.

95. 发明授权

US10969746B2 Magnetically compensated chip scale atomic clock 有权
公开(公告)号：US10969746B2
公开(公告)日：2021-04-06
申请号：US16730332
申请日：2019-12-30
申请人： TEXAS INSTRUMENTS INCORPORATED
发明人： Bradley Allen Kramer , Benjamin Stassen Cook , Juan Alejandro Herbsommer
IPC分类号： G04F5/14 , H03B17/00 , H03L7/26 , H01S5/024 , H01S5/0687 , H01S5/183 , H01S5/00 , H01S5/022
摘要： In described examples, a physics cell includes: a laser source configured to emit light towards an atomic chamber containing an atomic gas; a photodetector configured to receive emissions from the atomic chamber; and a field coil for generating a magnetic field in the atomic chamber. An electronics circuit includes: a controller circuit coupled to the photodetector output and having control outputs to a digital to analog converter circuit; the digital to analog converter circuit having a coil current output to adjust the magnetic field, a modulation control output to control a modulation of the light, and having an output to control a voltage controlled oscillator; and a radio-frequency output circuit having a voltage controlled oscillator coupled to the output of the digital to analog converter circuit outputting a radio frequency signal to the laser source in the physics cell.

96. 发明申请

US20210098964A1 SURFACE EMITTING LASER PACKAGE 有权
公开(公告)号：US20210098964A1
公开(公告)日：2021-04-01
申请号：US17041067
申请日：2019-05-02
申请人： LG INNOTEK CO., LTD.
发明人： Myung Sub KIM , Woo Jin MOON , Ju Young PARK
IPC分类号： H01S5/022 , H01S5/183 , H01S5/42 , H01S5/042
摘要： In a surface emitting laser package, a surface emitting laser element and a substrate may be electrically connected through a diffusion part. In detail, according to the surface emitting laser package, a housing includes a step, the diffusion part is disposed at the step of the housing, and the surface emitting laser element and the substrate may be electrically connected through a connection wiring extending through the housing to correspond to the step and a conductive line disposed at one side of the diffusion part.

97. 发明申请

US20210091537A1 HIGH-POWER VERTICAL CAVITY SURFACE EMITTING LASER DIODE (VCSEL) 有权
公开(公告)号：US20210091537A1
公开(公告)日：2021-03-25
申请号：US17029177
申请日：2020-09-23
申请人： VISUAL PHOTONICS EPITAXY CO., LTD.
发明人： Chao-Hsing Huang , Yu-Chung Chin , Van-Truong Dai
IPC分类号： H01S5/183
摘要： Provided is a high-power vertical cavity surface emitting laser diode (VCSEL), including a first epitaxial region, an active region and a second epitaxial region. One of the first epitaxial region and the second epitaxial region is an N-type epitaxial region, and the other of the first epitaxial region and the second epitaxial region includes a PN junction. The PN junction includes a P-type epitaxial layer, a tunnel junction and an N-type epitaxial layer. The tunnel junction is located between the P-type epitaxial layer and the N-type epitaxial layer, and the P-type epitaxial layer of the PN junction is closest to the active region.

98. 发明授权

US10958042B2 Semiconductor light-emitting device and method for manufacturing semiconductor light-emitting device 有权
公开(公告)号：US10958042B2
公开(公告)日：2021-03-23
申请号：US16351699
申请日：2019-03-13
申请人： KABUSHIKI KAISHA TOSHIBA
发明人： Kazuya Ohira , Hideto Furuyama
IPC分类号： H01S5/183 , H01S5/042 , H01S5/343
摘要： According to one embodiment, the first process of forming a first light-reflecting structure including forming a patterned dielectric layer on a substrate, forming a first high refractive index layer on the substrate and the dielectric layer, planarizing the first high refractive index layer, forming a mask layer on the first high refractive index layer, forming a periodic structure in the mask layer and the first high refractive index layer, the periodic structure having openings separated at a constant period, forming a low refractive index layer on the mask layer and filling the periodic structure with the low refractive index layer, and performing chemical mechanical polishing to cause the mask layer and the low refractive index layer to form substantially the same plane.

99. 发明申请

US20210075196A1 VERTICAL-CAVITY SURFACE-EMITTING LASER ARRAY WITH MULTIPLE METAL LAYERS FOR ADDRESSING DIFFERENT GROUPS OF EMITTERS 有权
公开(公告)号：US20210075196A1
公开(公告)日：2021-03-11
申请号：US16949520
申请日：2020-11-02
申请人： Lumentum Operations LLC
发明人： Eric R. HEGBLOM
IPC分类号： H01S5/42 , H01S5/028 , H01S5/183 , H01S5/022 , H01S5/042
摘要： An optical device may include an array of vertical-cavity surface-emitting lasers (VCSELs) having a design wavelength, each VCSEL having an emission area. The optical device may include a first metal layer, substantially covering the array, a second metal layer substantially covering the first metal layer, and an electrical isolation layer, between the first metal layer and the second metal layer, that includes vias for electrically connecting portions of the first metal layer and portions of the second metal layer. The optical device may include a dielectric disposed over the emission area of each VCSEL. A variation in a thickness of the dielectric across at least approximately 90% of an area of the dielectric may be less than approximately 2% of the design wavelength. A depth of a well around the emission area may be equal to at least approximately 10% of a width of the emission area.

100. 发明申请

US20210075192A1 SURFACE-EMITTING SEMICONDUCTOR LASER 有权
公开(公告)号：US20210075192A1
公开(公告)日：2021-03-11
申请号：US16644810
申请日：2018-10-29
申请人： ROHM CO., LTD.
发明人： Masashi YAMAMOTO , Yuji TSUJI , Daiju TAKAMIZU , Minoru MURAYAMA
IPC分类号： H01S5/183 , H01S5/042
摘要： A surface-emitting semiconductor laser includes a semiconductor laminated structure that includes a first-conductivity-type layer, an active layer, and a second-conductivity-type layer and in which light generated in the active layer is extracted as laser light from a side of the second-conductivity-type layer while resonating along a lamination direction of these layers, a current constriction layer in which the active layer and the second-conductivity-type layer are electrically connected together through an opening, an insulating layer that has translucency with respect to an emission wavelength of the active layer, a first electrode electrically connected to the first-conductivity-type layer, and a second electrode electrically connected to the second-conductivity-type layer, and, in the surface-emitting semiconductor laser, a part of the insulating layer is exposed from the second electrode, and the insulating layer exposed from the second electrode includes a first portion that has a first thickness and a second portion that has a second thickness to make output of light emitted from the active layer smaller than the first portion in comparison with the first thickness and that surrounds the first portion.

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