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    • 91. 发明授权
    • Method for the production of conical nanostructures on substrate surfaces
    • 在衬底表面上生产锥形纳米结构的方法
    • US09469526B2
    • 2016-10-18
    • US13518594
    • 2010-12-17
    • Christoph MorhardClaudia PacholskiJoachim P. Spatz
    • Christoph MorhardClaudia PacholskiJoachim P. Spatz
    • B44C1/22G02B1/10B81C1/00
    • B81C1/00031B81B2203/0361B81B2207/056Y10T428/24479
    • The invention relates to conical structures on substrate surfaces, in particular optical elements, to methods for the production thereof and to the use thereof, in particular in optical devices, solar cells and sensors. The conical nanostructures according to the invention are suitable in particular for providing substrate surfaces having very low light reflection. The method according to the invention for producing conical nanostructures on substrate surfaces comprises at least the steps of: a) providing a substrate surface covered with nanoparticles; b) etching the substrate surface covered with nanoparticles to a depth of at least 100 nm, wherein the nanoparticles act as an etching mask and the etching parameters are set in such a way that hyperboloid structures are produced underneath the nanoparticles; c) breaking the hyperboloid structures in the region of the smallest diameter by exerting mechanical forces, wherein the structures remaining on the substrate surface have a conical shape which corresponds substantially to half a single-shell hyperboloid.
    • 本发明涉及衬底表面,特别是光学元件上的锥形结构,用于生产它的方法及其用途,特别是在光学器件,太阳能电池和传感器中的应用。 根据本发明的锥形纳米结构特别适用于提供具有非常低的光反射的基底表面。 根据本发明的用于在衬底表面上生产锥形纳米结构的方法包括至少以下步骤:a)提供覆盖有纳米颗粒的衬底表面; b)将覆盖有纳米颗粒的衬底表面蚀刻至少至少100nm的深度,其中所述纳米颗粒用作蚀刻掩模,并且蚀刻参数被设置为在纳米颗粒下方产生双曲面结构; c)通过施加机械力来破坏最小直径区域中的双曲面结构,其中残留在基底表面上的结构具有基本上对应于单壳双曲面的一半的圆锥形状。
    • 94. 发明授权
    • Ion implant assisted metal etching
    • 离子注入辅助金属蚀刻
    • US09435038B2
    • 2016-09-06
    • US14473424
    • 2014-08-29
    • Varian Semiconductor Equipment Associates, Inc.
    • Thomas OmsteadWilliam Davis LeeTristan Ma
    • B44C1/22C23F17/00C23F1/08C23F1/00H01J37/317
    • C23F17/00C23F1/00C23F1/08C23G1/02C23G5/00H01J37/3171H01L21/32134H01L21/32136
    • An improved method of etching a metal substrate is described. After a mask layer is applied to the metal substrate, an ion implantation process is performed which implants ions, such as oxygen ions, into the exposed regions of the metal substrate. This implantation creates regions of metal oxide, which may be more susceptible to etching. Afterwards, the exposed regions of metal oxide are subjected to an etching process. This process may be through vaporization or may be a wet etch process. In some embodiments, the etchant is selected so that the metal oxide binds with the etchant to form a volatile compound, which stays in the vapor or gaseous state. This may reduce the unwanted deposition of the metal to other surfaces. These ion implantation and etching processes may be repeated a plurality of times to create a recessed feature of the desired depth.
    • 描述了一种蚀刻金属基底的改进方法。 在对金属基板施加掩模层之后,进行离子注入工艺,其将诸如氧离子的离子注入到金属基底的暴露区域中。 这种植入产生金属氧化物的区域,其可能更易于蚀刻。 之后,对金属氧化物的曝光区域进行蚀刻处理。 该方法可以通过蒸发或者可以是湿蚀刻工艺。 在一些实施方案中,选择蚀刻剂使得金属氧化物与蚀刻剂结合以形成保持在蒸汽或气态的挥发性化合物。 这可能减少金属不希望的沉积到其他表面。 这些离子注入和蚀刻工艺可以重复多次以产生所需深度的凹陷特征。