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91. 发明授权

US5898722A Dual wavelength monolithically integrated vertical cavity surface emitting lasers and method of fabrication 失效
标题翻译：双波长单片集成垂直腔表面发射激光器和制造方法
公开(公告)号：US5898722A
公开(公告)日：1999-04-27
申请号：US813399
申请日：1997-03-10
申请人： Jamal Ramdani , Michael S. Lebby , Wenbin Jiang
发明人： Jamal Ramdani , Michael S. Lebby , Wenbin Jiang
IPC分类号： H01S5/00 , H01S5/343 , H01S5/40 , H01S5/42 , H01S3/10 , H01L21/20 , H01S3/08 , H01S3/19
CPC分类号： B82Y20/00 , H01S5/423 , H01S5/026 , H01S5/18341 , H01S5/18361 , H01S5/18372 , H01S5/34326 , H01S5/4087
摘要： Dual wavelength monolithically integrated VCSELs and a method of fabrication for emitting a short wavelength light and a long wavelength light including a first mirror stack lattice matched to the surface of a substrate. A short wavelength VCSEL is fabricated and masked during the formation of a long wavelength VCSEL. Each VCSEL further including mirror pairs in a AlAs/AlGaAs material system, an active region lattice matched to a surface of the first mirror stack, and a second mirror stack lattice matched to a surface of the active region and capable of emitting either a short wavelength light or a long wavelength light, dependent upon design parameters. Electrical contacts are coupled to the active regions of the monolithically integrated short wavelength VCSEL and the long wavelength VCSEL. The dual wavelength monolithically integrated VCSELs fabricated as a semiconductor laser chip capable of read/write applications for both CDs and DVDs.
摘要翻译：双波长单片集成VCSEL和用于发射短波长光和长波长光的制造方法，其包括与衬底表面匹配的第一反射镜堆叠晶格。在形成长波长VCSEL的过程中制造短波长VCSEL并进行掩模。每个VCSEL还包括在AlAs / AlGaAs材料系统中的镜对，与第一反射镜叠层的表面匹配的有源区域晶格和与有源区的表面匹配的能够发射短波长的第二反射镜堆叠晶格光或长波长的光，取决于设计参数。电触点耦合到单片集成短波长VCSEL和长波长VCSEL的有源区。双波长单片集成VCSEL作为半导体激光芯片制造，能够对CD和DVD进行读/写应用。

92. 发明授权

US5859865A Semiconductor laser 失效
标题翻译：半导体激光器
公开(公告)号：US5859865A
公开(公告)日：1999-01-12
申请号：US823040
申请日：1997-03-21
申请人： Akihisa Tomita
发明人： Akihisa Tomita
IPC分类号： H01S5/00 , H01S5/343 , H01S3/19
CPC分类号： B82Y20/00 , H01S5/34326
摘要： A semiconductor laser includes a substrate and an active layer. The substrate has a lattice constant which falls within the range between 0.565 nm and 0.56 nm. The active layer has a quantum well structure in which a GaInP alloy crystal with a lattice constant larger than the lattice constant of the substrate is formed as a well layer and an AlGaInP alloy crystal with a lattice constant smaller than the lattice constant of the substrate is formed as a barrier layer.
摘要翻译：半导体激光器包括衬底和有源层。基板的晶格常数落在0.565nm和0.56nm之间的范围内。活性层具有量子阱结构，其中形成晶格常数大于衬底晶格常数的GaInP合金晶体作为阱层，晶格常数小于衬底晶格常数的AlGaInP合金晶体是形成阻挡层。

93. 发明授权

US5850411A Transverse electric (TE) polarization mode AlGaInP/GaAs red laser diodes, especially with self-pulsating operation 失效
公开(公告)号：US5850411A
公开(公告)日：1998-12-15
申请号：US713892
申请日：1996-09-17
申请人： Jo S. Major, Jr. , Randall S. Geels
发明人： Jo S. Major, Jr. , Randall S. Geels
IPC分类号： H01S5/065 , H01S5/223 , H01S5/34 , H01S5/343 , H01S3/19
CPC分类号： B82Y20/00 , H01S5/34326 , H01S2301/14 , H01S5/0658 , H01S5/2022 , H01S5/2231 , H01S5/3404
摘要： An AlGaInP/GaAs laser diode is disclosed in which the active region is made up of quantum wells that are sufficiently thin (less than 5 nm thick) that the transition energy increase due to quantum confinement of the carriers becomes significant. This allows the quantum well material composition to be selected for compressive strain so that the laser operates in the TE polarization mode, while still obtaining a transition energy of from 1.9-2.0 eV for 620-650 nm laser emission. Quantum barriers have sufficient thickness to confine carriers to the quantum wells. Self-pulsation may be obtained in a heterostructure that also includes a saturable absorption layer proximate to the active region and a ridge structure transversely confining absorption produced carriers in the central section of the absorber layer, while allowing lateral carrier diffusion to side regions where carriers are allowed to leave the absorber layer.

94. 发明授权

US5828685A Semiconductor laser device and a method of growing a semiconductor laser device 失效
标题翻译：半导体激光器件以及生长半导体激光器件的方法
公开(公告)号：US5828685A
公开(公告)日：1998-10-27
申请号：US773075
申请日：1996-12-26
申请人： Geoffrey Duggan
发明人： Geoffrey Duggan
IPC分类号： H01S5/00 , H01S5/20 , H01S5/30 , H01S5/32 , H01S5/343 , H01S3/19
CPC分类号： B82Y20/00 , H01S5/20 , H01S5/305 , H01S5/2009 , H01S5/3054 , H01S5/3211 , H01S5/3216 , H01S5/34326
摘要： A semiconductor laser device includes an active region, a cladding region, and a carrier blocking layer of the same conductivity type as the cladding region disposed on tho same side of the active region as the cladding region. The carrier, blocking layer has a greater impurity concentration than the cladding region.
摘要翻译：半导体激光器件包括有源区域，包层区域和与设置在与包层区域有效区域相同侧的包层区域的相同导电类型的载流子阻挡层。载流子，阻挡层比包层区域具有更大的杂质浓度。

95. 发明授权

US5825799A Microcavity semiconductor laser 失效
标题翻译：微腔半导体激光器
公开(公告)号：US5825799A
公开(公告)日：1998-10-20
申请号：US450284
申请日：1995-05-25
申请人： Seng-Tiong Ho , Daniel Yen Chu , Jian-Ping Zhang , Shengli Wu
发明人： Seng-Tiong Ho , Daniel Yen Chu , Jian-Ping Zhang , Shengli Wu
IPC分类号： H01S5/00 , G02F1/01 , H01S3/091 , H01S5/026 , H01S5/10 , H01S5/343 , H01S3/05
CPC分类号： B82Y20/00 , G02F1/011 , H01S5/10 , H01S5/1075 , G02F2203/055 , H01S3/091 , H01S5/026 , H01S5/1032 , H01S5/1042 , H01S5/105 , H01S5/34306 , H01S5/34326 , H01S5/3434
摘要： Laser comprising a first lasing microdisk, microcylinder or microannulus defining a microcavity having a circular cross-sectional periphery and a second waveguiding micromember spaced from the first lasing micromember in a different plane and optically coupled by resonant photon tunneling. The second waveguiding micromember includes a light output coupling for providing light output from the laser without adversely affecting the Q value and low lasing threshold of the microcavity.
摘要翻译：激光器包括限定具有圆形横截面周边的微腔的第一激光微盘，微圆柱体或微通道，以及在不同平面中与第一激光微型部件间隔开的第二波导微型组件，并通过共振光子隧道光学耦合。第二波导微元件包括光输出耦合器，用于提供来自激光器的光输出，而不会不利地影响微腔的Q值和低激光阈值。

96. 发明授权

US5812575A Semiconductor laser diode 失效
标题翻译：半导体激光二极管
公开(公告)号：US5812575A
公开(公告)日：1998-09-22
申请号：US698097
申请日：1996-08-15
申请人： Won-Jin Choi
发明人： Won-Jin Choi
IPC分类号： H01S5/00 , H01S5/30 , H01S5/34 , H01S5/343 , H01S3/19
CPC分类号： B82Y20/00 , H01S5/34 , H01S5/34326 , H01S5/3403 , H01S5/3406
摘要： Semiconductor laser diode in which an SCL (Strain Compensated Layer) is formed at an active layer of a 635 nm band semiconductor laser diode for having very low threshold current, is disclosed, including a first conduction type clad layer; a first optical guide layer; a strain compensated layer; an active layer having a strain applied thereto; a strain compensated layer; a second optical guide layer; and, a second conduction type clad layer, wherein the above layers are formed on a first conduction type substrate in succession.
摘要翻译：公开了一种半导体激光二极管，其中在具有非常低的阈值电流的635nm带半导体激光二极管的有源层上形成有SCL（应变补偿层），其包括第一导电型覆盖层; 第一光导层; 应变补偿层; 施加了应变的活性层; 应变补偿层; 第二光导层; 以及第二导电型覆盖层，其中上述层依次形成在第一导电型基板上。

97. 发明授权

US5796769A Red light vertical cavity surface emitting laser 失效
标题翻译：红光垂直腔表面发射激光
公开(公告)号：US5796769A
公开(公告)日：1998-08-18
申请号：US699319
申请日：1996-08-19
申请人： Jamal Ramdani , Michael S. Lebby , Wenbin Jiang
发明人： Jamal Ramdani , Michael S. Lebby , Wenbin Jiang
IPC分类号： H01S5/183 , H01S5/323 , H01S5/34 , H01S5/343 , H01S3/19
CPC分类号： B82Y20/00 , H01S5/183 , H01S5/34313 , H01S2302/00 , H01S5/32333 , H01S5/3407 , H01S5/34326
摘要： A stack (103) of distributed Bragg reflectors is disposed on the surface (105) of a semiconductor substrate (102). The stack (103) includes a plurality of alternating layers of material having alternating refractive indexes with the stack (103) having a first dopant type. A first cladding region (104) is disposed on the stack (103) with an active area (106) disposed on the first cladding region (104). The active area (106) includes layers of indium aluminum gallium phosphide, indium gallium arsenide phosphide, and indium aluminum gallium phosphide. A second cladding region (107) is disposed on the active area (106) with a stack (108) of distributed Bragg reflectors disposed on cladding region (107). A contact region (109) is disposed on the stack (108).
摘要翻译：分布式布拉格反射器的堆叠（103）设置在半导体衬底（102）的表面（105）上。堆叠（103）包括具有交替折射率的多个交替层，堆叠（103）具有第一掺杂剂类型。第一包层区域（104）设置在堆叠（103）上，具有设置在第一包层区（104）上的有源区（106）。有源区（106）包括铟镓磷化镓，砷化铟镓磷化铟和磷化铟镓磷酸盐层。第二包层区域（107）被布置在有源区域（106）上，其中布置布拉格反射器的堆叠（108）布置在包层区域（107）上。接触区域（109）设置在堆叠（108）上。

98. 发明授权

US5789773A Semiconductor light-emitting device 失效
标题翻译：半导体发光装置
公开(公告)号：US5789773A
公开(公告)日：1998-08-04
申请号：US724215
申请日：1996-10-01
申请人： Tadashi Takeoka , Sadayoshi Matsui
发明人： Tadashi Takeoka , Sadayoshi Matsui
IPC分类号： H01L21/203 , H01L33/06 , H01L33/14 , H01L33/30 , H01S5/00 , H01S5/30 , H01S5/323 , H01S5/343 , H01L33/00
CPC分类号： H01L33/30 , B82Y20/00 , H01L33/305 , H01S5/32325 , H01S5/305 , H01S5/34326
摘要： In an AlGaInP type semiconductor light-emitting device, an n-type AlGaInP cladding layer and a p-type AlGaInP cladding layer are deposited so as to interpose an active layer made of GaInP or AlGaInP therebetween. Light guiding layers are provided between the active layer and the n-type cladding layer, and/or, between the active layer and the p-type cladding layer, respectively. The p-type cladding layer is doped with Be serving as a p-type dopant. The active layer, the p-type cladding layer and the light guiding layers are doped with Si which may serve as an n-type dopant.
摘要翻译：在AlGaInP型半导体发光器件中，沉积n型AlGaInP包层和p型AlGaInP包覆层，以在其间插入由GaInP或AlGaInP制成的有源层。导光层分别设置在有源层和n型覆层之间，和/或分别在有源层和p型覆层之间。 p型覆层掺杂有作为p型掺杂剂的Be。有源层，p型覆层和导光层掺杂有可用作n型掺杂剂的Si。

99. 发明授权

US5737351A Semiconductor laser including ridge structure extending between window regions 失效
标题翻译：半导体激光器包括在窗口区域之间延伸的脊结构
公开(公告)号：US5737351A
公开(公告)日：1998-04-07
申请号：US660179
申请日：1996-06-03
申请人： Kenichi Ono
发明人： Kenichi Ono
IPC分类号： H01L21/308 , H01L21/306 , H01S5/00 , H01S5/16 , H01S5/20 , H01S5/223 , H01S5/323 , H01S5/343 , H01S3/19
CPC分类号： B82Y20/00 , H01L21/30612 , H01S5/162 , H01S5/209 , H01S5/2231 , H01S5/32325 , H01S5/34326
摘要： A method of fabricating a semiconductor laser includes successively growing a lower cladding layer of a first conductivity type, an active layer having a superlattice structure, a first upper cladding layer of a second conductivity type, an etch stopping layer of the second conductivity type, and a second upper cladding layer of the second conductivity type on a semiconductor substrate of the first conductivity type; diffusing a dopant impurity into parallel stripe-shaped regions of the active layer to disorder the superlattice structure of the active layer in these regions; etching the second upper cladding layer to expose the etch stopping layer without exposing the etch stopping layer on the disordered regions, thereby producing a stripe-shaped ridge structure extending perpendicular to the disordered regions; and growing a current blocking layer on the etch stopping layer and on the disordered regions, contacting both sides of the ridge structure. Since an etchant used for patterning does not contact the etch stopping layer on the disordered regions of the active layer, unwanted penetration of the etch stopping layer is avoided.
摘要翻译：制造半导体激光器的方法包括连续生长第一导电类型的下包层，具有超晶格结构的有源层，第二导电类型的第一上覆层，第二导电类型的蚀刻停止层，以及在第一导电类型的半导体衬底上的第二导电类型的第二上包层; 将掺杂剂杂质扩散到活性层的平行条形区域，以扰乱这些区域中的有源层的超晶格结构; 蚀刻第二上包层以暴露蚀刻停止层，而不在无序区域上暴露蚀刻停止层，从而产生垂直于无序区域延伸的条状脊结构; 并且在蚀刻停止层和无序区域上生长电流阻挡层，接触脊结构的两侧。由于用于图案化的蚀刻剂不与有源层的无序区域上的蚀刻停止层接触，所以避免了蚀刻停止层的不期望的穿透。

100. 发明授权

US5734670A Semiconductor device, semiconductor laser, and high electron mobility transistor 失效
标题翻译：半导体器件，半导体激光器和高电子迁移率晶体管
公开(公告)号：US5734670A
公开(公告)日：1998-03-31
申请号：US632149
申请日：1996-04-15
申请人： Kenichi Ono , Takashi Motoda
发明人： Kenichi Ono , Takashi Motoda
IPC分类号： H01L21/20 , H01L21/338 , H01L29/778 , H01L29/812 , H01S5/00 , H01S5/223 , H01S5/34 , H01S5/343 , H01S3/19 , H01L29/06
CPC分类号： B82Y20/00 , H01L29/7783 , H01S5/34 , H01S5/2231 , H01S5/3403 , H01S5/34326
摘要： A semiconductor device includes a semiconductor substrate having a surface; and a strained superlattice structure including first semiconductor layers having a first strain in a direction with respect to the semiconductor substrate and second semiconductor layers having a second strain in the same direction as and different in magnitude from the first strain, the first semiconductor layers and the second semiconductor layers being alternatingly laminated. The difference in strains between the first semiconductor layers and the second semiconductor layers is reduced, so that the crystalline quality of the strained superlattice structure is improved.
摘要翻译：半导体器件包括具有表面的半导体衬底; 以及应变超晶格结构，其包括在相对于半导体衬底的方向上具有第一应变的第一半导体层和具有与第一应变相同方向并且与第一应变不同的第二应变的第二半导体层，第一半导体层和交替层叠第二半导体层。第一半导体层和第二半导体层之间的应变差减小，从而提高了应变超晶格结构的结晶质量。

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