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91. 发明申请

US20080191240A1 Avalanche Photo Diode 审中-公开
标题翻译：雪崩照片二极管
公开(公告)号：US20080191240A1
公开(公告)日：2008-08-14
申请号：US11914871
申请日：2005-05-18
申请人： Eiji Yagyu , Eitaro Ishimura , Masaharu Nakaji
发明人： Eiji Yagyu , Eitaro Ishimura , Masaharu Nakaji
IPC分类号： H01L31/0336
CPC分类号： H01L31/1075 , H01L31/0352 , H01L31/184 , Y02E10/544 , Y02P70/521
摘要： An avalanche photodiode including a first electrode; and a substrate including a first semiconductor layer of a first conduction type electrically connected to the first electrode, in which at least an avalanche multiplication layer, a light absorption layer, and a second semiconductor layer of a second conduction type with a larger band gap than the light absorption layer are deposited on the substrate. The second semiconductor layer is separated into inner and outer regions by a groove formed therein, the inner region electrically connected to a second. With the configuration, the avalanche photodiode has a low dark current and high long-term reliability. In addition, the outer region includes an outer trench, and at least the light absorption layer is removed by the outer trench to form a side face of the light absorption layer. With the configuration, the dark current can be further reduced.
摘要翻译：一种雪崩光电二极管，包括第一电极; 以及基板，包括电连接到所述第一电极的第一导电类型的第一半导体层，其中至少具有比所述第一电极具有更大带隙的第二导电类型的雪崩倍增层，光吸收层和第二半导体层光吸收层沉积在基底上。第二半导体层通过其中形成的沟槽分成内部和外部区域，内部区域电连接到第二半导体层。通过该配置，雪崩光电二极管具有低暗电流和高长期可靠性。此外，外部区域包括外部沟槽，并且至少光吸收层被外部沟槽去除以形成光吸收层的侧面。通过该结构，可以进一步减小暗电流。

92. 发明申请

US20080188078A1 Manufacturing method of electronic element 有权
标题翻译：电子元件的制造方法
公开(公告)号：US20080188078A1
公开(公告)日：2008-08-07
申请号：US12010517
申请日：2008-01-25
申请人： Yasuhiro Iguchi , Nobuyuki Mitsui
发明人： Yasuhiro Iguchi , Nobuyuki Mitsui
IPC分类号： H01L21/302
CPC分类号： H01L31/184 , H01L33/0062 , Y02E10/544 , Y02P70/521
摘要： A circumferential portion of an epitaxial wafer is removed to remove an anomalously grown elevated portion formed in a circumferential chamfer. An epitaxial layer in the circumferential portion is removed with a width q=t to 5t wherein t is the thickness of the epitaxial layer so that the surface of a substrate is exposed. Therefore, cracking of the epitaxial layer in processing steps can be prevented.
摘要翻译：去除外延晶片的圆周部分以除去形成在周向倒角中的异常生长的升高部分。外周部分的外延层以宽度q = t至5t去除，其中t为外延层的厚度，从而露出基板的表面。因此，可以防止加工步骤中的外延层的破裂。

93. 发明授权

US07390359B2 Nitride semiconductor wafer 有权
标题翻译：氮化物半导体晶圆
公开(公告)号：US07390359B2
公开(公告)日：2008-06-24
申请号：US11612481
申请日：2006-12-19
申请人： Michimasa Miyanaga , Koji Uematsu , Takuji Okahisa
发明人： Michimasa Miyanaga , Koji Uematsu , Takuji Okahisa
IPC分类号： C30B25/12
CPC分类号： H01L29/2003 , C30B29/403 , H01L21/02389 , H01L21/02433 , H01L21/0254 , H01L29/045 , H01L31/184 , H01L33/16 , Y10S117/902
摘要： A nitride semiconductor substrate having properties preferable for the manufacture of various nitride semiconductor devices is made available, by specifying or controlling the local variation in the off-axis angle of the principal surface of the nitride semiconductor substrate. In a nitride semiconductor single-crystal wafer having a flat principal surface, the crystallographic plane orientation of the principal surface of the nitride semiconductor single-crystal wafer varies locally within a predetermined angular range.
摘要翻译：可以通过指定或控制氮化物半导体衬底的主表面的偏轴角度的局部变化来获得具有优选用于制造各种氮化物半导体器件的性质的氮化物半导体衬底。在具有平坦主表面的氮化物半导体单晶晶片中，氮化物半导体单晶晶片的主表面的晶面取向在预定角度范围内局部变化。

94. 发明申请

US20080128745A1 GROUP III-NITRIDE GROWTH ON SILICON OR SILICON GERMANIUM SUBSTRATES AND METHOD AND DEVICES THEREFOR 有权
标题翻译：硅或硅锗基体上的III族氮化物生长及其方法和装置
公开(公告)号：US20080128745A1
公开(公告)日：2008-06-05
申请号：US11566288
申请日：2006-12-04
申请人： Michael A. Mastro , Charles R. Eddy , Shahzad Akbar
发明人： Michael A. Mastro , Charles R. Eddy , Shahzad Akbar
IPC分类号： H01L31/0336 , H01L31/0232 , H01L31/18
CPC分类号： H01L31/078 , H01L31/1812 , H01L31/184 , Y02E10/544
摘要： A structure including a Si1-xGex substrate and a distributed Bragg reflector layer disposed directly onto the substrate. The distributed Bragg reflector layer includes a repeating pattern that includes at least one aluminum nitride layer and a second layer having the general formula AlyGa1-yN. Another aspect of the present invention is various devices including this structure. Another aspect of the present invention is directed to a method of forming such a structure comprising providing a Si1-xGex substrate and depositing a distributed Bragg reflector layer directly onto the substrate. Another aspect of the present invention is directed to a photodetector or photovoltaic cell device, including a Si1-xGex substrate device, a group III-nitride device and contacts to provide a conductive path for a current generated across at least one of the Si1-xGex substrate device and the group III-nitride device upon incident light.
摘要翻译：包括Si 1-x N x N x N基底的结构和直接设置在基底上的分布式布拉格反射层。分布式布拉格反射器层包括重复图案，其包括至少一个氮化铝层和具有通式Al x Ga 1-y N的第二层。本发明的另一方面是包括该结构的各种装置。本发明的另一方面涉及一种形成这种结构的方法，其包括提供Si 1-x N x N x N基底并将分布式布拉格反射层直接沉积到基质。本发明的另一方面涉及一种光电检测器或光伏电池器件，其包括Si 1-x N x N x N x衬底器件，III族氮化物器件和与为入射光中的Si 1-x N x N x衬底器件和III族氮化物器件中的至少一个产生的电流提供导电路径。

95. 发明申请

US20070286251A1 Optical switch structure 失效
标题翻译：光开关结构
公开(公告)号：US20070286251A1
公开(公告)日：2007-12-13
申请号：US11440422
申请日：2006-05-25
申请人： Chih-Hung Wu , Kai-Sheng Chang , Hwa-Yuh Shih , Yen-Chang Tzeng
发明人： Chih-Hung Wu , Kai-Sheng Chang , Hwa-Yuh Shih , Yen-Chang Tzeng
IPC分类号： H01S5/00
CPC分类号： H01L31/09 , H01L31/0304 , H01L31/184 , H01L31/1864 , Y02E10/544 , Y02P70/521
摘要： A structure of an optical switch makes the optical switch capable of receiving broadband signals. And the manufacturing procedure is simplified.
摘要翻译：光开关的结构使得光开关能够接收宽带信号。制造工序简化。

96. 发明申请

US20070040181A1 Crystalline composition, wafer, and semi-conductor structure 审中-公开
标题翻译：晶体组成，晶圆和半导体结构
公开(公告)号：US20070040181A1
公开(公告)日：2007-02-22
申请号：US11376575
申请日：2006-03-15
申请人： Mark D'Evelyn , Dong-Sil Park , Steven LeBoeuf , Larry Rowland , Kristi Narang , Huicong Hong , Stephen Arthur , Peter Sandvik
发明人： Mark D'Evelyn , Dong-Sil Park , Steven LeBoeuf , Larry Rowland , Kristi Narang , Huicong Hong , Stephen Arthur , Peter Sandvik
IPC分类号： H01L33/00
CPC分类号： B82Y20/00 , C30B23/00 , C30B29/406 , H01L21/02378 , H01L21/02389 , H01L21/0242 , H01L21/02458 , H01L21/0254 , H01L21/02573 , H01L21/02609 , H01L21/0262 , H01L21/02631 , H01L31/0304 , H01L31/03042 , H01L31/184 , H01L33/32 , H01S5/3402 , Y02E10/544
摘要： A crystalline composition is provided that includes gallium and nitrogen. The crystalline composition may have an amount of oxygen present in a concentration of less than about 3×1018 per cubic centimeter, and may be free of two-dimensional planar boundary defects in a determined volume of the crystalline composition. The volume may have at least one dimension that is about 2.75 millimeters or greater, and the volume may have a one-dimensional linear defect dislocation density of less than about 10,000 per square centimeter.
摘要翻译：提供了包括镓和氮的结晶组合物。结晶组合物可以具有以每立方厘米小于约3×10 18的浓度存在的氧量，并且在确定体积的结晶组合物中可以没有二维平面边界缺陷。该体积可以具有至少一个尺寸为约2.75毫米或更大，并且该体积可具有小于约10,000每平方厘米的一维线性缺陷位错密度。

97. 发明申请

US20060185582A1 High efficiency solar cells utilizing wafer bonding and layer transfer to integrate non-lattice matched materials 审中-公开
标题翻译：利用晶片接合和层转移的高效率太阳能电池集成非格子匹配材料
公开(公告)号：US20060185582A1
公开(公告)日：2006-08-24
申请号：US11357436
申请日：2006-02-21
申请人： Harry Atwater , James Zahler , Anna Morral , Tom Pinnington , Sean Olson
发明人： Harry Atwater , James Zahler , Anna Morral , Tom Pinnington , Sean Olson
IPC分类号： C30B23/00 , C30B25/00 , C30B28/12 , C30B28/14
CPC分类号： H01L31/1892 , C30B33/06 , H01L31/03046 , H01L31/043 , H01L31/0687 , H01L31/06875 , H01L31/0735 , H01L31/184 , H01L31/1844 , H01L2924/0002 , Y02E10/544 , Y02P70/521 , H01L2924/00
摘要： A method of making a virtual substrate includes providing a donor substrate comprising a single crystal donor layer of a first material over a support substrate, wherein the first material comprises a ternary, quaternary or penternary semiconductor material or a material which is not available in bulk form, bonding the donor substrate to a handle substrate, and separating the donor substrate from the handle substrate such that a single crystal film of the first material remains bonded to the handle substrate.
摘要翻译：制造虚拟衬底的方法包括提供在支承衬底上包括第一材料的单晶施体层的施主衬底，其中第一材料包括三元，四价或五元半导体材料或不以批量形式获得的材料将供体衬底粘合到手柄衬底上，并将施主衬底与手柄衬底分离，使得第一材料的单晶膜保持结合到手柄衬底上。

98. 发明申请

US20060169996A1 Crystalline composition, wafer, and semi-conductor structure 审中-公开
标题翻译：晶体组成，晶圆和半导体结构
公开(公告)号：US20060169996A1
公开(公告)日：2006-08-03
申请号：US11376640
申请日：2006-03-15
申请人： Mark D'Evelyn , Dong-Sil Park , Steven LeBoeuf , Larry Rowland , Kristi Narang , Huicong Hong , Stephen Arthur , Peter Sandvik
发明人： Mark D'Evelyn , Dong-Sil Park , Steven LeBoeuf , Larry Rowland , Kristi Narang , Huicong Hong , Stephen Arthur , Peter Sandvik
IPC分类号： H01L33/00
CPC分类号： C30B23/00 , B82Y10/00 , B82Y20/00 , B82Y30/00 , C30B7/00 , C30B29/403 , C30B29/406 , H01L21/02378 , H01L21/02389 , H01L21/0242 , H01L21/02458 , H01L21/0254 , H01L21/02573 , H01L21/02609 , H01L21/0262 , H01L21/02631 , H01L31/0304 , H01L31/03042 , H01L31/184 , H01L33/32 , H01S5/3402 , Y02E10/544
摘要： A crystalline composition is provided. The crystalline composition may include gallium and nitrogen; and the crystalline composition may have an infrared absorption peak at about 3175 cm−1, with an absorbance per unit thickness of greater than about 0.01 cm−1.
摘要翻译：提供了结晶组合物。结晶组合物可包括镓和氮; 并且结晶组合物可以在约3175cm -1处具有红外吸收峰，每单位厚度的吸光度大于约0.01cm -1。

99. 发明授权

US07009224B2 Metamorphic long wavelength high-speed photodiode 失效
标题翻译：变质长波长高速光电二极管
公开(公告)号：US07009224B2
公开(公告)日：2006-03-07
申请号：US10413186
申请日：2003-04-14
申请人： Ralph H. Johnson , James K. Guenter , James R. Biard
发明人： Ralph H. Johnson , James K. Guenter , James R. Biard
IPC分类号： H01L31/0336 , H01L31/0328
CPC分类号： H01L31/105 , H01L21/02381 , H01L21/02395 , H01L21/02463 , H01L21/02505 , H01L21/02507 , H01L21/0251 , H01L21/02546 , H01L31/184 , Y02E10/544 , Y10S438/938
摘要： A metamorphic device including a substrate structure upon which a semiconductor device can be formed. In the metamorphic device, a buffer layer matching a substrate lattice constant is formed at normal growth temperatures and a thin grading layer which grades past the desired lattice constant is configured at a low temperature. A reverse grading layer grades the lattice constant back to match a desired lattice constant. Thereafter, a thick layer is formed thereon, based on the desired lattice constant. Annealing can then occur to isolate dislocated material in at least the grading layer and the reverse grading layer. Thereon a strained layer superlattice is created upon which a high-speed photodiode or other semiconductor device can be formed.
摘要翻译：一种变质装置，其包括可以形成半导体器件的基板结构。在变质装置中，在正常生长温度下形成与衬底晶格常数相匹配的缓冲层，并且在低温下配置经过所需晶格常数的薄分级层。反向分级层将晶格常数回归以匹配所需的晶格常数。此后，基于所需的晶格常数，在其上形成厚层。然后可以发生退火以在至少分级层和反向分级层中分离脱位的材料。在其上形成了可以形成高速光电二极管或其它半导体器件的应变层超晶格。

100. 发明授权

US07001455B2 Method and apparatus for doping semiconductors 失效
标题翻译：掺杂半导体的方法和装置
公开(公告)号：US07001455B2
公开(公告)日：2006-02-21
申请号：US10215391
申请日：2002-08-08
申请人： Mary C. Cretella , Richard L. Wallace, Jr.
发明人： Mary C. Cretella , Richard L. Wallace, Jr.
IPC分类号： C30B13/08 , C30B13/10
CPC分类号： H01L21/228 , H01L21/2225 , H01L31/0288 , H01L31/1804 , H01L31/182 , H01L31/184 , Y02E10/544 , Y02E10/546 , Y02E10/547 , Y02P70/521
摘要： Semiconductor materials such as silicon particles are doped by mixing the semiconductor material with a solution having a dopan and a solvent. The solvent is removed from the wetted surface of the particles of the semiconductor material, thereby yielding particles that are substantially free from the solvent and are uniformly coated with the dopant.
摘要翻译：通过将半导体材料与具有二苯并吡喃和溶剂的溶液混合来掺杂半导体材料如硅颗粒。从半导体材料的颗粒的润湿表面除去溶剂，从而产生基本上不含溶剂并且均匀地涂覆有掺杂剂的颗粒。

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