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91. 发明申请

US20150041866A1 SOLID-STATE IMAGING DEVICE AND METHOD FOR MANUFACTURING SOLID-STATE IMAGING DEVICE 有权
公开(公告)号：US20150041866A1
公开(公告)日：2015-02-12
申请号：US14105887
申请日：2013-12-13
申请人： Kabushiki Kaisha Toshiba
发明人： Nagataka TANAKA
IPC分类号： H01L27/146
CPC分类号： H01L27/14612 , H01L27/146 , H01L27/14634 , H01L27/14643 , H01L27/14683
摘要： According to one embodiment, a solid-state imaging device is provided. The solid-state imaging device includes a photoelectric conversion element, a floating diffusion, and an amplifying transistor. The photoelectric conversion element photoelectrically convert incident light into electric charges with an amount corresponding to an amount of the incident light, and accumulates the electric charges. The floating diffusion accumulates the electric charges read out from the photoelectric conversion element. The amplifying transistor includes a gate electrode connected to the floating diffusion, and outputs a signal based on the amount of the electric charges accumulated in the floating diffusion. The amplifying transistor includes a first concentration region disposed in at least a part of the maximum region of the depletion layer and a second concentration region disposed at a deeper position than the first concentration region, and has higher impurity concentration than that of the first concentration region.

92. 发明授权

US08846432B2 Frontside-illuminated barrier infrared photodetector device and methods of fabricating the same 有权
标题翻译：前照射屏障红外光电探测器及其制造方法
公开(公告)号：US08846432B2
公开(公告)日：2014-09-30
申请号：US13614433
申请日：2012-09-13
申请人： Robert A. Jones , David Forrai , Richard L. Rawe, Jr.
发明人： Robert A. Jones , David Forrai , Richard L. Rawe, Jr.
IPC分类号： H01L31/18
CPC分类号： H01L27/146 , B82Y20/00 , H01L27/14634 , H01L27/1465 , H01L27/1467 , H01L27/1469 , H01L27/14694 , H01L31/0232 , H01L31/03046 , H01L31/035236 , H01L31/101 , Y02E10/544
摘要： Frontside-illuminated barrier infrared photodetector devices and methods of fabrication are disclosed. In one embodiment, a frontside-illuminated barrier infrared photodetector includes a transparent carrier substrate, and a plurality of pixels. Each pixel of the plurality of pixels includes an absorber layer, a barrier layer on the absorber layer, a collector layer on the barrier layer, and a backside electrical contact coupled to the absorber layer. Each pixel has a frontside and a backside. The absorber layer and the barrier layer are non-continuous across the plurality of pixels, and the barrier layer of each pixel is closer to a scene than the absorber layer of each pixel. A plurality of frontside common electrical contacts is coupled to the frontside of the plurality of pixels, wherein the frontside of the plurality of pixels and the plurality of frontside common electrical contacts are bonded to the transparent carrier substrate.
摘要翻译：公开了前照射屏障红外光电检测器件及其制造方法。在一个实施例中，前照射屏障红外光电检测器包括透明载体衬底和多个像素。多个像素的每个像素包括吸收层，吸收层上的阻挡层，阻挡层上的集电极层和耦合到吸收层的背面电接触。每个像素都有前端和背面。吸收层和阻挡层在多个像素之间是不连续的，并且每个像素的势垒层比每个像素的吸收层更靠近场景。多个正面公共电触头耦合到多个像素的前侧，其中多个像素的前侧和多个前侧公共电触点被接合到透明载体基板。

93. 发明授权

US08816405B2 Elevated pocket pixels, imaging devices and systems including the same and method of forming the same 有权
标题翻译：袋状像素升高，成像装置和系统的构成及其形成方法
公开(公告)号：US08816405B2
公开(公告)日：2014-08-26
申请号：US13084649
申请日：2011-04-12
申请人： Salman Akram
发明人： Salman Akram
IPC分类号： H01L27/148
CPC分类号： H01L27/14607 , H01L27/146 , H01L27/14601 , H01L27/14603 , H01L27/14605 , H01L27/14621 , H01L27/14627 , H01L27/14632 , H01L27/14643 , H01L27/14645 , H01L27/14647 , H01L27/14685 , H01L27/14687 , H01L27/14689 , H01L27/14692 , H01L31/02162 , H01L31/022408 , H01L31/028 , H01L31/0288 , H01L31/0352 , H01L31/035281 , H01L31/03762 , H01L31/1804
摘要： An elevated photosensor for image sensors and methods of forming the photosensor. The photosensor may have light sensors having indentation features including, but not limited to, v-shaped, u-shaped, or other shaped features. Light sensors having such an indentation feature can redirect incident light that is not absorbed by one portion of the photosensor to another portion of the photosensor for additional absorption. In addition, the elevated photosensors reduce the size of the pixel cells while reducing leakage, image lag, and barrier problems.
摘要翻译：用于图像传感器的升高的光电传感器和形成光电传感器的方法。光传感器可以具有具有凹陷特征的光传感器，包括但不限于v形，u形或其它成形特征。具有这种压痕特征的光传感器可以将不被光电传感器的一部分吸收的入射光重定向到光传感器的另一部分以便额外吸收。此外，升高的光电传感器减小像素单元的尺寸，同时减少泄漏，图像滞后和屏障问题。

94. 发明申请

US20140231887A1 Method and Apparatus for Image Sensor Packaging 有权
标题翻译：图像传感器封装的方法和装置
公开(公告)号：US20140231887A1
公开(公告)日：2014-08-21
申请号：US13769771
申请日：2013-02-18
申请人： TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
发明人： Szu-Ying Chen , Meng-Hsun Wan , Dun-Nian Yaung , Pao-Tung Chen , Jen-Cheng Liu
IPC分类号： H01L27/146 , H01L31/18
CPC分类号： H01L27/14643 , H01L27/146 , H01L27/14612 , H01L27/1462 , H01L27/14621 , H01L27/14627 , H01L27/14634 , H01L27/14636 , H01L27/14638 , H01L27/1464 , H01L27/14685 , H01L27/1469 , H01L31/18 , H01L2924/381
摘要： A backside illuminated image sensor comprises a photodiode and a first transistor in a sensor region and located in a first substrate, wherein the first transistor is electrically coupled to the photodiode. The image sensor further comprises a plurality of logic circuits formed in a second substrate, wherein the second substrate is stacked on the first substrate and the logic circuit are coupled to the first transistor through a plurality of bonding pads, the bonding pads disposed outside of the sensor region.
摘要翻译：背面照明图像传感器包括传感器区域中的光电二极管和第一晶体管，并且位于第一衬底中，其中第一晶体管电耦合到光电二极管。图像传感器还包括形成在第二基板中的多个逻辑电路，其中第二基板堆叠在第一基板上，并且逻辑电路通过多个接合焊盘耦合到第一晶体管，所述接合焊盘设置在传感器区域。

95. 发明申请

US20140224964A1 APPARATUS AND METHOD FOR DETECTION OF RADIATION 审中-公开
标题翻译：检测辐射的装置和方法
公开(公告)号：US20140224964A1
公开(公告)日：2014-08-14
申请号：US14176531
申请日：2014-02-10
申请人： IMAGE INSIGHT INC.
发明人： Peter R. SOLOMON , Gordon A. DRUKIER , Eric P. RUBENSTEIN , Gregory Nicholas BENES
IPC分类号： G01T7/12 , G01T1/00 , H01L27/146
CPC分类号： H01L27/146 , G01T7/00 , G01V5/0075
摘要： Systems and methods for identifying pixels in digital images and video images that have interacted with high energy particles are described herein and using this system to coordination imagers and network alerts to permit the system to separate non-radioactive objects from radioactive objects.
摘要翻译：本文描述了用于识别与高能量粒子相互作用的数字图像和视频图像中的像素的系统和方法，并且使用该系统来协调成像器和网络警报，以允许系统将非放射性物体与放射性物体分离。

96. 发明申请

US20140209985A1 GERMANIUM PHOTODETECTOR SCHOTTKY CONTACT FOR INTEGRATION WITH CMOS AND Si NANOPHOTONICS 有权
公开(公告)号：US20140209985A1
公开(公告)日：2014-07-31
申请号：US14228106
申请日：2014-03-27
申请人： International Business Machines Corporation
发明人： Solomon Assefa , Jeffrey P. Gambino , Steven M. Shank
IPC分类号： H01L27/146
CPC分类号： H01L27/146 , H01L27/1443 , H01L31/022408 , H01L31/103 , H01L31/1808 , H01L35/34 , H01L51/50 , Y02E10/50
摘要： A method of forming an integrated photonic semiconductor structure having a photodetector device and a CMOS device may include depositing a dielectric stack over the photodetector device such that the dielectric stack encapsulates the photodetector. An opening is etched into the dielectric stack down to an upper surface of a region of an active area of the photodetector. A first metal layer is deposited directly onto the upper surface of the region of the active area via the opening such that the first metal layer may cover the region of the active area. Within the same mask level, a plurality of contacts including a second metal layer are located on the first metal layer and on the CMOS device. The first metal layer isolates the active area from the occurrence of metal intermixing between the second metal layer and the active area of the photodetector.

97. 发明申请

US20140175589A1 LIGHT RECEIVING DEVICE 有权
标题翻译：灯接收装置
公开(公告)号：US20140175589A1
公开(公告)日：2014-06-26
申请号：US14192118
申请日：2014-02-27
申请人： FUJITSU LIMITED
发明人： Kazumasa TAKABAYASHI
IPC分类号： H01L27/146
CPC分类号： H01L31/02325 , H01L27/1443 , H01L27/146 , H01L31/105 , H01L31/1123
摘要： A light receiving element includes a core configured to propagate a signal light, a first semiconductor layer having a first conductivity type, the first semiconductor layer being configured to receive the signal light from the core along a first direction in which the core extends, an absorbing layer configured to absorb the signal light received by the first semiconductor layer, and a second semiconductor layer having a second conductivity type opposite to the first conductivity type.
摘要翻译：光接收元件包括被配置为传播信号光的芯，具有第一导电类型的第一半导体层，第一半导体层被配置为沿着芯延伸的第一方向接收来自芯的信号光，吸收被配置为吸收由第一半导体层接收的信号光的层，以及具有与第一导电类型相反的第二导电类型的第二半导体层。

98. 发明授权

US08743207B2 Infrared camera architecture systems and methods 有权
标题翻译：红外摄像机架构系统和方法
公开(公告)号：US08743207B2
公开(公告)日：2014-06-03
申请号：US12844124
申请日：2010-07-27
申请人： Pierre Boulanger , Marcel Tremblay , Jim Goodland , Barbara Sharp , Farhad Mirbod , Theodore R. Hoelter
发明人： Pierre Boulanger , Marcel Tremblay , Jim Goodland , Barbara Sharp , Farhad Mirbod , Theodore R. Hoelter
IPC分类号： H04N5/33 , G01J5/20 , G01J5/02
CPC分类号： G01J5/20 , G01J1/0204 , G01J1/44 , G01J5/02 , G01J5/0215 , G01J5/023 , G01J5/046 , G01J5/10 , G01J2005/0077 , G01J2005/204 , H01L22/14 , H01L22/32 , H01L27/146 , H01L27/14618 , H01L27/1462 , H01L27/14632 , H01L27/14636 , H01L27/14669 , H01L27/14687 , H01L27/14698 , H01L37/02 , H04N5/2251 , H04N5/33 , Y10T29/49826
摘要： An infrared camera architecture includes, for an embodiment, an infrared detector, a substrate, a plurality of electrical components coupled to the substrate, and a pedestal made of a thermally conductive material and having a leg coupled to the substrate. The infrared detector is supported by and thermally coupled to the pedestal, with the pedestal thermally isolating the infrared detector from the plurality of electrical components.
摘要翻译：对于一个实施例，红外线照相机结构包括红外检测器，衬底，耦合到衬底的多个电气部件，以及由导热材料制成并具有连接到衬底的腿部的基座。红外检测器由支架支撑并热耦合到基座，基座将红外检测器与多个电气部件热隔离。

99. 发明授权

US08742310B2 Imaging device with high dynamic range 有权
标题翻译：具有高动态范围的成像装置
公开(公告)号：US08742310B2
公开(公告)日：2014-06-03
申请号：US13351617
申请日：2012-01-17
申请人： Fadoua Guezzi , Arnaud Peizerat
发明人： Fadoua Guezzi , Arnaud Peizerat
IPC分类号： H01L27/146
CPC分类号： H01L27/146 , H01L27/14634 , H04N5/3535 , H04N5/374
摘要： A high dynamic range imaging device including a first substrate with multiple pixels, each pixel having a photodetector associated with multiple read-out circuits. Each read-out circuit including a device for charging and discharging the photodetector that is associated with the read-out circuit. Each charging and discharging device being controlled by a charge and discharge activation signal imposing an integration time of the photodetector of each pixel associated with the read-out circuit. The device further including a second substrate, distinct from the first, with an electronic control circuit for controlling the charging and discharging devices, designed for generating multiple charge and discharge activation signals to be transmitted to the charging and discharging devices using electrical connections between the first and second substrates. Each pixel or group of pixels is associated to an activation signal imposing an integration time specific and appropriate to the pixel or group of pixels.
摘要翻译：一种高动态范围成像装置，包括具有多个像素的第一基板，每个像素具有与多个读出电路相关联的光电检测器。每个读出电路包括用于对与读出电路相关联的光电检测器进行充电和放电的装置。每个充电和放电装置由充电和放电激活信号控制，施加与读出电路相关联的每个像素的光电检测器的积分时间。该装置还包括与第一基板不同的第二基板，其具有用于控制充电和放电装置的电子控制电路，该电子控制电路被设计用于产生多个充电和放电激活信号，以使用第一和第二触点之间的电连接传输到充电和放电装置和第二基板。每个像素或像素组与激活信号相关联，该激活信号强加特定且适合于像素或像素组的积分时间。

100. 发明申请

US20140134769A1 NANOSTRUCTURE OPTOELECTRONIC DEVICE WITH INDEPENDENTLY CONTROLLABLE JUNCTIONS 有权
标题翻译：具有独立可控制功能的纳米结构光电器件
公开(公告)号：US20140134769A1
公开(公告)日：2014-05-15
申请号：US14157276
申请日：2014-01-16
申请人： Sundiode Inc.
发明人： James C. Kim , Sungsoo Yi , Danny E. Mars
IPC分类号： H01L27/144 , H05B33/08 , H01L27/146 , G09G3/32
CPC分类号： H01L27/144 , B82Y10/00 , B82Y20/00 , G09G3/32 , H01L25/0756 , H01L27/146 , H01L27/15 , H01L29/0665 , H01L31/035281 , H01L31/0687 , H01L31/0725 , H01L31/101 , H01L31/184 , H01L33/08 , H01L33/20 , H01L33/38 , H01L2224/48091 , H01L2933/0016 , H05B33/0842 , Y02E10/544 , Y10S977/95 , Y10S977/954 , H01L2924/00014
摘要： Nanostructure array optoelectronic devices are disclosed. The optoelectronic device may have one or more intermediate electrical contacts that are physically and electrically connected to sidewalls of the array of nanostructures. The contacts may allow different photo-active regions of the optoelectronic device to be independently controlled. For example, one color light may be emitted or detected independently of another using the same group of one or more nanostructures. The optoelectronic device may be a pixilated device that may serve as an LED display or imaging sensor. The pixilated device may have an array of nanostructures with alternating rows and columns of sidewall electrical contacts at different layers. A pixel may be formed at the intersection of a row contact and a column contact. As one example, a single group of one or more nanostructures has a blue sub-pixel, a green sub-pixel, and a red sub-pixel.
摘要翻译：公开了纳米结构阵列光电器件。光电子器件可以具有物理和电连接到纳米结构阵列的侧壁的一个或多个中间电触点。触点可以允许独立地控制光电子器件的不同光电活性区域。例如，可以使用相同组的一个或多个纳米结构独立地发射或检测一个颜色的光。光电子器件可以是可用作LED显示器或成像传感器的像素化器件。像素化器件可以具有在不同层处具有交替的行和列的侧壁电触点的纳米结构的阵列。可以在行触点和列触点的交叉处形成像素。作为一个示例，一组一个或多个纳米结构具有蓝色子像素，绿色子像素和红色子像素。

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