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91. 发明授权

US09387480B2 Granulation by agglomeration of ceramic compositions ground in dry phase 有权
标题翻译：通过在干燥相中研磨的陶瓷组合物的聚集造粒
公开(公告)号：US09387480B2
公开(公告)日：2016-07-12
申请号：US13881549
申请日：2011-10-25
申请人： Antonio Arnau Villanova
发明人： Antonio Arnau Villanova
IPC分类号： B02C17/18 , B01J2/10 , C04B33/04 , C04B33/13 , C04B35/626
CPC分类号： B02C17/18 , B01J2/10 , C04B33/04 , C04B33/131 , C04B35/62695 , C04B2235/3201 , C04B2235/3206 , C04B2235/3208 , C04B2235/3215 , C04B2235/3232 , C04B2235/3244 , C04B2235/3272 , C04B2235/3418 , C04B2235/3472 , C04B2235/42 , C04B2235/5436 , C04B2235/5445 , C04B2235/72 , C04B2235/725 , C04B2235/726 , C04B2235/727
摘要： The invention relates to the granulation by agglomeration of ceramic compositions ground in dry phase. The invention proposes an alternative to the method of wet-phase grinding and drying by atomization. The method consists of dry-phase grinding and preparing argillaceous ceramic compositions without binders, additives, or deflocculants from argillaceous minerals (about 60%) mixed with inorganic materials, grain sizes of less than 120 micrometers, in a horizontal rotary cylindrical device with deflecting paddles, the intake of said minerals, powdery materials and water takes place at one end of said device; and granules that are moved by said deflecting paddles are formed due to the rotation of said device. The outlet of the granulated material is at the opposite end of said device. The invention offers the following advantages: energy savings of 80%; savings in water consumption during granulation of 75-80% and 10-20% of additional savings in the pressure for pressing the granules. The time necessary to change from one ceramic composition to another is one hour, compared with several days using the current method of atomization. The method of granulation constitutes a novel environmental technology with zero air and water table pollution, and with much lower water consumption.
摘要翻译：本发明涉及通过在干燥相中研磨的陶瓷组合物的聚集的造粒。本发明提出了通过雾化的湿相研磨和干燥方法的替代方案。该方法包括干法研磨和在具有偏转桨的水平旋转圆柱形装置中制备不含粘合剂，添加剂或来自泥质矿物质（约60％）的混合无机材料，粒径小于120微米的粘土，添加剂或抗絮凝剂的泥质陶瓷组合物所述矿物质，粉末状物质和水的摄取发生在所述装置的一端; 并且由于所述设备的旋转而形成由所述偏转桨移动的颗粒。造粒材料的出口位于所述装置的相对端。本发明具有以下优点：节能80％; 在造粒过程中节省了耗水量的75-80％和10-20％的压榨颗粒的压力。从一种陶瓷组合物转变到另一种陶瓷组合物所需的时间为1小时，与使用目前的雾化方法相比为几天。造粒方法构成了一种新颖的环境技术，无污染，无水表污染，耗水量更低。

92. 发明授权

US09305827B2 Handle substrates of composite substrates for semiconductors 有权
标题翻译：处理半导体复合基板的基板
公开(公告)号：US09305827B2
公开(公告)日：2016-04-05
申请号：US14578916
申请日：2014-12-22
申请人： NGK INSULATORS, LTD.
发明人： Akiyoshi Ide , Yasunori Iwasaki , Sugio Miyazawa
IPC分类号： H01L21/00 , H01L21/762 , B23K20/00 , H01L21/20 , H01L21/02
CPC分类号： H01L21/76251 , B23K20/00 , C04B35/111 , C04B35/115 , C04B35/565 , C04B35/581 , C04B35/587 , C04B37/001 , C04B37/005 , C04B2235/3206 , C04B2235/3225 , C04B2235/3244 , C04B2235/5409 , C04B2235/5445 , C04B2235/6562 , C04B2235/6582 , C04B2235/661 , C04B2235/662 , C04B2235/72 , C04B2235/725 , C04B2235/963 , C04B2237/062 , C04B2237/064 , C04B2237/343 , C04B2237/365 , C04B2237/366 , C04B2237/368 , C04B2237/52 , C04B2237/708 , H01L21/02002 , H01L21/0243 , H01L21/187 , H01L21/2007 , H01L21/76254 , Y10T428/24355
摘要： A composite substrate for a semiconductor includes a handle substrate 11 and a donor substrate bonded to a surface of the handle substrate 11 directly or through a bonding layer. The handle substrate 11 is composed of an insulating polycrystalline material, a surface 15 of the handle substrate 11 has a microscopic central line average surface roughness Ra of 5 nm or smaller, and recesses 6 are formed on the surface of the handle substrate.
摘要翻译：用于半导体的复合衬底包括直接或通过接合层与手柄基板11的表面接合的手柄基板11和供体基板。手柄基板11由绝缘多晶材料构成，手柄基板11的表面15的微观中心线平均表面粗糙度Ra为5nm以下，在手柄基板的表面形成有凹部6。

93. 发明授权

US09219224B2 Method for manufacturing piezoelectric substrate 有权
标题翻译：制造压电基板的方法
公开(公告)号：US09219224B2
公开(公告)日：2015-12-22
申请号：US14041114
申请日：2013-09-30
申请人： NGK INSULATORS, LTD.
发明人： Takashi Ebigase , Tomohiko Hibino
IPC分类号： H01L41/187 , C04B35/491 , H01L41/39 , H01L41/43 , C04B35/493 , C04B35/64 , C04B35/486
CPC分类号： H01L41/39 , C04B35/486 , C04B35/491 , C04B35/493 , C04B35/64 , C04B2235/3213 , C04B2235/3251 , C04B2235/3255 , C04B2235/72 , C04B2235/725 , C04B2235/728 , C04B2235/761 , C04B2235/765 , C04B2235/94 , C04B2235/9623 , C04B2235/9638 , H01L41/1876 , H01L41/43 , Y10T29/42
摘要： The method for manufacturing a piezoelectric substrate includes a process of forming a material having composition M1−y/2+x(N1−yNby)O3+x (where 0≦y≦0.045, M represents Pb1−pSrp with 0≦p≦0.03, and N represents Ti1−qZrq with 0.45≦q≦0.60) into a sheet form, and a process of burning the material formed into the sheet form while mounted on a setter to obtain a piezoelectric substrate. A thickness of the piezoelectric substrate is 30 μm or less, and a surface area/thickness ratio of the piezoelectric substrate is 1×107 μm or more. The variable x has a value within or on a boundary of a region R shown by hatching in FIG. 1.
摘要翻译：制造压电基板的方法包括形成具有组成M1-y / 2 + x（N1-yNby）O3 + x（其中0＆nlE; y＆nlE; 0.045，M表示Pb1-pSrp为0＆nlE; p＆nlE; 0.03 ，N表示具有0.45＆lt; llE; q＆nlE; 0.60的Ti1-qZrq）成片状，以及在安装在固定器上时将形成为片状的材料燃烧以获得压电基板的工序。压电基板的厚度为30μm以下，压电基板的表面积/厚度比为1×107μm以上。变量x具有在图2中通过阴影示出的区域R的边界内或之上的值。 1。

94. 发明授权

US09073755B2 Spherical aluminum nitride powder 有权
标题翻译：球形氮化铝粉末
公开(公告)号：US09073755B2
公开(公告)日：2015-07-07
申请号：US13820384
申请日：2011-08-31
申请人： Takatoshi Muneoka , Kazutaka Watanabe
发明人： Takatoshi Muneoka , Kazutaka Watanabe
IPC分类号： C01B21/072
CPC分类号： C01B21/0726 , C01B21/072 , C01P2004/03 , C01P2004/32 , C01P2004/61 , C01P2006/12 , C04B35/581 , C04B35/6265 , C04B2235/3208 , C04B2235/422 , C04B2235/424 , C04B2235/425 , C04B2235/528 , C04B2235/5296 , C04B2235/5409 , C04B2235/5436 , C04B2235/723 , C04B2235/725 , C04B2235/726 , C04B2235/761 , Y10T428/2982
摘要： [Problems]To provide a spherical aluminum nitride powder that features high thermal conductivity and filling property, and that is useful as a filler for a heat radiating material, and a method of producing the same.[Means for Solution]A spherical aluminum nitride powder comprising aluminum nitride particles having an average particle diameter of 3 to 30 μm, a sphericalness of not less than 0.75, and an oxygen content of not more than 1% by weight wherein, when the average particle diameter is d (μm), the specific surface area S (m2/g) satisfies the following formula (1), (1.84/d)≦S≦(1.84/d+0.5) (1).
摘要翻译： [问题]提供一种具有高导热性和填充性的球形氮化铝粉末，其可用作散热材料的填料及其制造方法。 [解决方案]包含平均粒径为3〜30μm，球面度为0.75以上，氧含量为1重量％以下的氮化铝粒子的球形氮化铝粉末，其中，当平均粒径粒径为d（μm），比表面积S（m2 / g）满足下式（1），（1.84 / d）＆nlE; S＆nlE;（1.84 / d + 0.5）（1）。

95. 发明授权

US09056797B2 High zirconia fused cast refractory 有权
$High zirconia fused cast refractory$
标题翻译：高氧化锆熔融耐火材料
公开(公告)号：US09056797B2
公开(公告)日：2015-06-16
申请号：US14108638
申请日：2013-12-17
申请人： AGC CERAMICS CO., LTD.
发明人： Yukihiro Ushimaru , Shinya Hayashi
IPC分类号： C04B35/484 , C04B35/48 , C03B5/43 , C04B35/657 , F27D1/00
CPC分类号： C04B35/48 , C03B5/43 , C04B35/484 , C04B35/657 , C04B2235/3201 , C04B2235/3206 , C04B2235/3208 , C04B2235/3217 , C04B2235/3232 , C04B2235/3244 , C04B2235/3248 , C04B2235/3272 , C04B2235/34 , C04B2235/3409 , C04B2235/3418 , C04B2235/447 , C04B2235/72 , C04B2235/725 , C04B2235/727 , C04B2235/77 , C04B2235/9669 , F27D1/00 , F27D1/0006 , Y02P40/57
摘要： To provide a high zirconia fused cast refractory which has high corrosion resistance to molten glass and which is scarcely susceptible to cracking during its production. A high zirconia fused cast refractory which has a chemical composition comprising from 96.5 to 98.5 mass % of ZrO2, from 0.8 to 2.7 mass % of SiO2, from 0.04 to 0.35 mass % in a total amount of Na2O and K2O, and from 0.02 to 0.18 mass % of B2O3, wherein contents of Na2O, K2O and B2O3 satisfy the relation of the following formula (1) at the same time: 0.03≧CB2O3−(CNa2O+CK2O) (1) wherein CNa2O is the content of Na2O, CK2O is the content of K2O, and CB2O3 is the content of B2O3, and each of these contents represents mass % in the refractory.
摘要翻译：提供对熔融玻璃具有高耐腐蚀性且在其生产过程中几乎不易开裂的高氧化锆熔融铸造耐火材料。具有ZrO 2 96.5〜98.5质量％，SiO 2 0.8〜2.7质量％，Na 2 O，K 2 O总量为0.04〜0.35质量％，0.02〜0.18的高熔点氧化锆熔融耐火材料质量％的B2O3，其中Na2O，K2O和B2O3的含量同时满足下式（1）的关系：0.03≥CB2O3-（CNa2O + CK2O）（1）其中CNa2O是Na2O的含量，CK2O是 K2O和CB2O3的含量是B2O3的含量，这些含量都表示耐火材料的质量％。

96. 发明申请

US20140315116A1 SOLID OXIDE FUEL CELL 审中-公开
标题翻译：固体氧化物燃料电池
公开(公告)号：US20140315116A1
公开(公告)日：2014-10-23
申请号：US14304434
申请日：2014-06-13
申请人： NGK INSULATORS, LTD.
发明人： Makoto OHMORI , Ayano KOBAYASHI , Shinji FUJISAKI
IPC分类号： H01M4/90
CPC分类号： H01M4/8663 , B01J23/002 , B01J23/83 , B01J27/188 , B01J35/0033 , B01J2523/00 , C04B35/01 , C04B35/26 , C04B2235/3213 , C04B2235/3227 , C04B2235/3275 , C04B2235/3279 , C04B2235/5436 , C04B2235/5445 , C04B2235/72 , C04B2235/725 , C04B2235/727 , C04B2235/768 , H01M4/9033 , H01M8/0202 , H01M8/0217 , H01M2008/1293 , Y02E60/50 , Y02E60/525 , B01J2523/24 , B01J2523/3706 , B01J2523/842 , B01J2523/845 , B01J2523/305 , B01J2523/51 , B01J2523/67 , B01J2523/847
摘要： A solid oxide fuel cell includes a cathode, and an anode, and a solid electrolyte layer disposed between the cathode and the anode. The cathode includes a complex oxide having a perovskite structure expressed by the general formula ABO3. A standard deviation value for the atomic percentage of respective elements at the A site measured using energy dispersive X-ray spectroscopy at 10 spots in a single field on the sectional surface of the cathode is no more than 10.4.
摘要翻译：固体氧化物燃料电池包括阴极和阳极以及设置在阴极和阳极之间的固体电解质层。阴极包括具有由通式ABO 3表示的钙钛矿结构的复合氧化物。使用能量色散X射线光谱法在阴极截面上的单个场中的10个点测量的A位置处的各元素的原子百分比的标准偏差值不大于10.4。

97. 发明申请

US20140200131A1 Si3N4 INSULATOR MATERIAL FOR CORONA DISCHARGE IGNITER SYSTEMS 审中-公开
标题翻译：用于CORONA放电IGNITER系统的Si3N4绝缘材料
公开(公告)号：US20140200131A1
公开(公告)日：2014-07-17
申请号：US14215512
申请日：2014-03-17
申请人： CERADYNE, INC.
发明人： Biljana Mikijelj
IPC分类号： C04B35/584 , C04B35/65 , C04B35/645
CPC分类号： C04B35/584 , C04B35/587 , C04B35/591 , C04B35/593 , C04B35/5935 , C04B35/597 , C04B35/645 , C04B35/6455 , C04B35/65 , C04B2235/3206 , C04B2235/3208 , C04B2235/3213 , C04B2235/3215 , C04B2235/3217 , C04B2235/3222 , C04B2235/3224 , C04B2235/3225 , C04B2235/3227 , C04B2235/3229 , C04B2235/3244 , C04B2235/3409 , C04B2235/3418 , C04B2235/36 , C04B2235/3839 , C04B2235/386 , C04B2235/428 , C04B2235/5409 , C04B2235/5427 , C04B2235/6021 , C04B2235/6022 , C04B2235/6023 , C04B2235/612 , C04B2235/6587 , C04B2235/668 , C04B2235/721 , C04B2235/723 , C04B2235/725 , C04B2235/767 , C04B2235/77 , C04B2235/85 , C04B2235/9607
摘要： A silicon nitride material is disclosed which has properties beneficial for efficient operation of a corona discharge igniter system in an internal combustion gas engine.
摘要翻译：公开了一种氮化硅材料，其具有有利于内燃机中电晕放电点火器系统的有效操作的特性。

98. 发明申请

US20140187408A1 HIGH ZIRCONIA FUSED CAST REFRACTORY 有权
标题翻译：高ZIRCONIA熔融铸造厂
公开(公告)号：US20140187408A1
公开(公告)日：2014-07-03
申请号：US14108638
申请日：2013-12-17
申请人： AGC CERAMICS CO., LTD.
发明人： Yukihiro USHIMARU , Shinya Hayashi
IPC分类号： C04B35/48
CPC分类号： C04B35/48 , C03B5/43 , C04B35/484 , C04B35/657 , C04B2235/3201 , C04B2235/3206 , C04B2235/3208 , C04B2235/3217 , C04B2235/3232 , C04B2235/3244 , C04B2235/3248 , C04B2235/3272 , C04B2235/34 , C04B2235/3409 , C04B2235/3418 , C04B2235/447 , C04B2235/72 , C04B2235/725 , C04B2235/727 , C04B2235/77 , C04B2235/9669 , F27D1/00 , F27D1/0006 , Y02P40/57
摘要： To provide a high zirconia fused cast refractory which has high corrosion resistance to molten glass and which is scarcely susceptible to cracking during its production. A high zirconia fused cast refractory which has a chemical composition comprising from 96.5 to 98.5 mass % of ZrO2, from 0.8 to 2.7 mass % of SiO2, from 0.04 to 0.35 mass % in a total amount of Na2O and K2O, and from 0.02 to 0.18 mass % of B2O3, wherein contents of Na2O, K2O and B2O3 satisfy the relation of the following formula (1) at the same time: 0.03≧CB2O3−(CNa2O+CK2O) (1) wherein CNa2O is the content of Na2O, CK2O is the content of K2O, and CB2o3 is the content of B2O3, and each of these contents represents mass % in the refractory.
摘要翻译：提供对熔融玻璃具有高耐腐蚀性且在其生产过程中几乎不易开裂的高氧化锆熔融铸造耐火材料。具有ZrO 2 96.5〜98.5质量％，SiO 2 0.8〜2.7质量％，Na 2 O，K 2 O总量为0.04〜0.35质量％，0.02〜0.18的高熔点氧化锆熔融耐火材料质量％的B2O3，其中Na2O，K2O和B2O3的含量同时满足下式（1）的关系：0.03≥CB2O3-（CNa2O + CK2O）（1）其中CNa2O是Na2O的含量，CK2O是 K2O和CB2o3的含量是B2O3的含量，这些含量都表示耐火材料的质量％。

99. 发明授权

US08673795B2 Si3N4 insulator material for corona discharge igniter systems 有权
标题翻译：用于电晕放电点火器系统的Si3N4绝缘体材料
公开(公告)号：US08673795B2
公开(公告)日：2014-03-18
申请号：US13374216
申请日：2011-12-16
申请人： Biljana Mikijelj
发明人： Biljana Mikijelj
IPC分类号： C04B35/584
CPC分类号： C04B35/584 , C04B35/587 , C04B35/591 , C04B35/593 , C04B35/5935 , C04B35/597 , C04B35/645 , C04B35/6455 , C04B35/65 , C04B2235/3206 , C04B2235/3208 , C04B2235/3213 , C04B2235/3215 , C04B2235/3217 , C04B2235/3222 , C04B2235/3224 , C04B2235/3225 , C04B2235/3227 , C04B2235/3229 , C04B2235/3244 , C04B2235/3409 , C04B2235/3418 , C04B2235/36 , C04B2235/3839 , C04B2235/386 , C04B2235/428 , C04B2235/5409 , C04B2235/5427 , C04B2235/6021 , C04B2235/6022 , C04B2235/6023 , C04B2235/612 , C04B2235/6587 , C04B2235/668 , C04B2235/721 , C04B2235/723 , C04B2235/725 , C04B2235/767 , C04B2235/77 , C04B2235/85 , C04B2235/9607
摘要： A silicon nitride material is disclosed which has properties necessary for efficient operation of a corona discharge igniter system in an internal combustion gas engine allowing an increase in fuel efficiency of over 10%. The material is disclosed in a range of compositions, all of which exhibit high dielectric strengths, high mechanical strength, thermal shock resistance and fracture toughness, low dielectric constant and loss tangent and electrical resistivity, all of which significantly increase the efficiency of the igniter system over current state of the art alumina insulators. Moreover, the materials retain their dielectric strength and structural integrity at elevated temperatures, up to 800° C.-1000° C. One embodiment comprises a sintered silicon nitride process comprising powder batching, binder removal and sintering. In the preferred embodiment the method of manufacture for silicon nitride is an SRBSN process comprising powder batching, powder pressing, binder removal, nitriding and sintering.
摘要翻译：公开了一种氮化硅材料，其具有能够有效地操作内燃机中的电晕放电点火器系统所需的性质，允许燃料效率提高超过10％。该材料在一系列组合物中公开，所有这些组合物都显示出高介电强度，高机械强度，耐热冲击性和断裂韧性，低介电常数和损耗角正切和电阻率，所有这些都显着提高了点火器系统的效率超过目前最先进的氧化铝绝缘体。此外，这些材料在升高的温度下保持其介电强度和结构完整性，高达800℃-1000℃。一个实施方案包括烧结氮化硅工艺，其包括粉末配料，粘合剂去除和烧结。在优选的实施方案中，氮化硅的制造方法是包括粉末配料，粉末压制，粘合剂去除，氮化和烧结的SRBSN工艺。

100. 发明申请

US20140001040A1 SPUTTERING TARGET AND OXIDE SEMICONDUCTOR FILM 审中-公开
标题翻译：溅射靶和氧化物半导体膜
公开(公告)号：US20140001040A1
公开(公告)日：2014-01-02
申请号：US14018606
申请日：2013-09-05
申请人： IDEMITSU KOSAN CO., LTD.
发明人： Kazuyoshi INOUE , Koki YANO , Futoshi UTSUNO
IPC分类号： C23C14/08
CPC分类号： H01J37/3429 , C01G15/00 , C04B35/01 , C04B35/453 , C04B35/6261 , C04B35/62625 , C04B35/62655 , C04B35/64 , C04B2235/3229 , C04B2235/3244 , C04B2235/3251 , C04B2235/3256 , C04B2235/3258 , C04B2235/3284 , C04B2235/3286 , C04B2235/3287 , C04B2235/3293 , C04B2235/5409 , C04B2235/5436 , C04B2235/5445 , C04B2235/604 , C04B2235/6585 , C04B2235/6586 , C04B2235/725 , C04B2235/77 , C04B2235/80 , C23C14/086 , C23C14/3414 , H01J2237/332 , H01L21/02565 , H01L21/02631
摘要： A sputtering target containing oxides of indium (In), gallium (Ga) and zinc (Zn), which includes a compound shown by ZnGa2O4 and a compound shown by InGaZnO4.
摘要翻译：包含铟（In），镓（Ga）和锌（Zn）的氧化物的溅射靶，其包含ZnGa 2 O 4所示的化合物和InGaZnO 4所示的化合物。

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