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    • 92. 发明授权
    • Via structure and method thereof
    • 其结构及其方法
    • US08592981B2
    • 2013-11-26
    • US13141609
    • 2009-12-23
    • Thorbjörn EbeforsEdvard KälvestenPeter ÅgrenNiklas Svedin
    • Thorbjörn EbeforsEdvard KälvestenPeter ÅgrenNiklas Svedin
    • H01L29/40
    • G02B26/0833B81B7/0006B81B7/007B81B2207/092B81B2207/095G02B6/3518G02B6/3584G02B26/0841H01L21/76898H01L23/481H01L2924/0002H01L2924/00012H01L2924/00
    • The invention relates to a layered micro-electronic and/or micro-mechanic structure, comprising at least three alternating electrically conductive layers with insulating layers between the conductive layers. There is also provided a via in a first outer layer, said via comprising an insulated conductive connection made of wafer native material through the layer, an electrically conductive plug extending through the other layers and into said via in the first outer layer in order to provide conductivity through the layers, and an insulating enclosure surrounding said conductive plug in at least one selected layer of said other layers for insulating said plug from the material in said selected layer. It also relates to micro-electronic and/or micro-mechanic device comprising a movable member provided above a cavity such that it is movable in at least one direction. The device has a layered structure according to the invention. Methods of making such a layered MEMS structure is also provided.
    • 本发明涉及分层的微电子和/或微机械结构,其包括在导电层之间具有绝缘层的至少三个交替的导电层。 还提供了在第一外层中的通孔,所述通孔包括由穿过该层的晶片天然材料制成的绝缘导电连接,在第一外层中延伸穿过其它层并进入所述通孔的导电插塞,以便提供 通过层的导电性,以及围绕所述其它层的至少一个所选层的所述导电插塞的绝缘外壳,用于使所述插塞与所述选定层中的材料绝缘。 它还涉及微电子和/或微机械装置,其包括设置在空腔上方的可动构件,使得其可在至少一个方向上移动。 该装置具有根据本发明的分层结构。 还提供了制造这种分层MEMS结构的方法。
    • 100. 发明授权
    • Capacitive sensor and manufacturing method therefor
    • 电容传感器及其制造方法
    • US08188555B2
    • 2012-05-29
    • US12277329
    • 2008-11-25
    • Yasushi Igarashi
    • Yasushi Igarashi
    • H01L29/84
    • G01P15/125B81B7/02B81B2201/0235B81B2201/0264B81B2207/092B81C1/00301G01P1/023G01P2015/0828
    • A capacitive sensor includes a semiconductor substrate, a fixed electrode serving as a first electrode formed on a surface of or in the semiconductor substrate, a structure formed on the semiconductor substrate to have a vibratable second electrode that is formed to be spaced from and opposed to the semiconductor substrate and from the fixed electrode serving as the first electrode, a sealing member serving as a first sealing member formed on the semiconductor substrate to be spaced from the structure, to cover the structure, and to have a through hole serving as a first through hole, and a movable electrode serving as a vibratable third electrode formed on the sealing member to block up the through hole, and to be spaced from and opposed to the movable electrode.
    • 电容传感器包括半导体衬底,用作形成在半导体衬底的表面上或半导体衬底中的第一电极的固定电极,形成在半导体衬底上的结构,以具有形成为与第二电极间隔开并与之相对的可振动的第二电极 半导体衬底和用作第一电极的固定电极,用作第一密封构件的密封构件,形成在半导体衬底上以与结构间隔开以覆盖结构,并且具有用作第一电极的通孔 通孔,以及用作可振动的第三电极的可动电极,形成在密封构件上以阻挡通孔,并与可动电极间隔开并与之相对。