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91. 发明申请

US20060125002A1 Semiconductor structure for operation at high current 审中-公开
标题翻译：用于大电流工作的半导体结构
公开(公告)号：US20060125002A1
公开(公告)日：2006-06-15
申请号：US11008941
申请日：2004-12-13
申请人： Wen-Hsiung Wang
发明人： Wen-Hsiung Wang
IPC分类号： H01L29/76
CPC分类号： H01L27/0207
摘要： A semiconductor structure for operation at high current related to a small volume of semiconductor structure that could enhance the rated current of the prior art, especially used in high-power cells of integrated circuits like transistors in the power supply. The semiconductor structure uses the third metal layer for enhancing the rated current of the circuit of the prior through parallel connected the circuit of the prior.
摘要翻译：一种用于大电流操作的半导体结构，其与小体积的半导体结构相关，其可以增强现有技术的额定电流，特别是在诸如电源中的晶体管的集成电路的高功率单元中使用。半导体结构使用第三金属层来提高先前通过并联连接的先前电路的电路的额定电流。

92. 发明申请

US20050024899A1 Flyback type alternation power supply with primary/secondary synchronize control 审中-公开
标题翻译：反激式交流电源具有主/次同步控制
公开(公告)号：US20050024899A1
公开(公告)日：2005-02-03
申请号：US10627756
申请日：2003-07-28
申请人： Hui Chang Yang
发明人： Hui Chang Yang
IPC分类号： H02M1/08 , H02M3/335
CPC分类号： H02M1/08 , H02M3/33592 , Y02B70/1475
摘要： A flyback type alternation power supply includes a voltage transformer, a primary switching unit, a secondary switching unit and an insulating unit. Wherein, the primary switching unit consists of at least a first switching component and a first control circuit. Further, the secondary switching unit consists of at least a second switching component and a second control circuit. The first control circuit controls the insulating unit to output a cut-off signal to the second control circuit. After receiving the cut-off signal, the second control circuit commands the second switching component to enter a cut-off state. By doing this, the first control circuit could control time of sending cut-off signal to the second switching component. Hence, the second switching unit could enter cut-off state before or at the time when secondary current descent to zero, and allow the present invention to operate in continuous or non-continuous mode.
摘要翻译：反激式交流电源包括电压互感器，初级开关单元，次级开关单元和绝缘单元。其中，一次开关单元至少包括第一开关元件和第一控制电路。此外，二次开关单元由至少第二开关部件和第二控制电路构成。第一控制电路控制绝缘单元向第二控制电路输出截止信号。在接收到截止信号之后，第二控制电路命令第二切换部件进入截止状态。通过这样做，第一控制电路可以控制向第二开关部件发送截止信号的时间。因此，第二开关单元可以在二次电流下降到零之前或者当二次电流下降到零时进入截止状态，并且允许本发明以连续或非连续模式工作。

93. 发明申请

US20040257095A1 Current detecting circuit AC/DC flyback switching power supply 失效
标题翻译：电流检测电路AC / DC反激式开关电源
公开(公告)号：US20040257095A1
公开(公告)日：2004-12-23
申请号：US10464557
申请日：2003-06-19
申请人： Niko Semiconductor Co., LTD
发明人： Hui Chiang Yang
IPC分类号： G01R027/08
CPC分类号： G01R19/0092 , G01R31/40
摘要： A current detecting circuit connects to a secondary side of a transformer, including a first, second transistors and a field-effect transistor (FET). The first transistor has a base connecting with the base and emitter of the second transistor to form a common base terminal, an emitter forming a first detecting terminal and a collector forming a feedback terminal. The second transistor has a collector forming a second detecting terminal. The FET is used to replace a prior current rectifying diode. The FET has a source connecting to an output terminal of the transformer and a drain connecting to a direct current (DC) output terminal. The first, second detecting terminals and feedback terminal are connected with the source, drain and gate of the FET, respectively. Via detecting the current of the DC output terminal, the FET is timely turned on and off to release the energy stored in the transformer.
摘要翻译：电流检测电路连接到变压器的次级侧，包括第一，第二晶体管和场效应晶体管（FET）。第一晶体管具有与第二晶体管的基极和发射极连接的基极以形成公共基极端子，形成第一检测端子的发射极和形成反馈端子的集电极。第二晶体管具有形成第二检测端子的集电极。 FET用于替代现有的电流整流二极管。 FET具有连接到变压器的输出端的源极和连接到直流（DC）输出端子的漏极。第一，第二检测端子和反馈端分别与FET的源极，漏极和栅极连接。通过检测直流输出端子的电流，FET及时打开和关闭以释放存储在变压器中的能量。

94. 发明申请

US20040145037A1 Power semiconductor able of fast heat sinking 审中-公开
标题翻译：功率半导体能够快速散热
公开(公告)号：US20040145037A1
公开(公告)日：2004-07-29
申请号：US10350058
申请日：2003-01-24
申请人： NIKO SEMICONDUCTOR CO., LTD.
发明人： Hui-Chiang Yang
IPC分类号： H01L023/495
CPC分类号： H05K1/0203 , H01L23/367 , H01L23/4006 , H01L2023/4031 , H01L2023/405 , H01L2023/4056 , H01L2023/4062 , H01L2924/0002 , H05K2201/10166 , H05K2203/081 , H01L2924/00
摘要： The power semiconductor element able of fast heat sinking is provided to increase the effect of heat sinking and is provided thereon with a gate junction, a drain electronic current junction and a source electronic current junction to allow welding of the power semiconductor element to the printed circuit board through the gate junction, the drain electronic current junction and the source electronic current junction. The power semiconductor element is characterized by that it is formed on the upper end thereof a conductor mount exposed to the air; when the power semiconductor element is operated to generate high temperature, the heat generated by it can be directly released through the conductor mount. Thereby, the purpose of heat sinking can be achieved.
摘要翻译：提供能够快速散热的功率半导体元件以增加散热的影响，并且在其上设置有栅极结，漏极电子电流结和源电子电流结，以允许功率半导体元件焊接到印刷电路板通过栅极结，漏极电流结和源电子电流结。功率半导体元件的特征在于，其上端形成有暴露于空气的导体安装座; 当功率半导体元件工作以产生高温时，其产生的热可以通过导体安装件直接释放。从而可以实现散热的目的。

95. 发明授权

US10043728B2 Semiconductor package structure and manufacturing method thereof 有权
公开(公告)号：US10043728B2
公开(公告)日：2018-08-07
申请号：US15439464
申请日：2017-02-22
申请人： NIKO SEMICONDUCTOR CO., LTD.
发明人： Chih-Cheng Hsieh
IPC分类号： H01L23/36 , H01L23/49 , H01L23/367 , H01L21/52 , H01L23/498 , H01L23/373 , H02P27/06
摘要： A semiconductor package structure and manufacturing method thereof are provided. Firstly, a first surface mounting unit, a first printed circuit board, and a second printed circuit board are provided. The first surface mounting unit includes a first chip and a first conductive frame, and the first conductive frame has a first carrier board and a first metal member connected to the first carrier board. A first side of the first chip is electrically connected to the first carrier board of the first conductive frame. A second side of the first chip and the first metal member are connected to the first circuit board by a first pad and a second pad respectively. The second circuit board is connected to the first carrier board and hence, the first surface mounting unit is located between the first circuit board and the second circuit board.

96. 发明授权

US09947551B2 Chip package structure and manufacturing method thereof 有权
公开(公告)号：US09947551B2
公开(公告)日：2018-04-17
申请号：US15135182
申请日：2016-04-21
申请人： NIKO SEMICONDUCTOR CO., LTD. , SUPER GROUP SEMICONDUCTOR CO., LTD.
发明人： Chih-Cheng Hsieh , Hsiu-Wen Hsu
IPC分类号： H01L23/48 , H01L21/48 , H01L25/07 , H01L23/544 , H01L23/492 , H01L23/495
CPC分类号： H01L21/4825 , H01L21/4828 , H01L21/4842 , H01L23/492 , H01L23/49513 , H01L23/49562 , H01L23/544 , H01L25/072 , H01L2223/54426 , H01L2223/54486 , H01L2224/73253 , H01L2224/97
摘要： A chip package structure and the manufacturing method thereof are provided. Firstly, a conductive frame including a bottom plate and a plurality of partition plates is provided. The bottom plate has a supporting surface and a bottom surface opposite thereto, and the partition plates protrude from the supporting surface to define a plurality of the accommodating regions. Subsequently, a plurality of chips is provided, and each of the chips is correspondingly accommodated in each of the accommodating regions with a back surface facing to the supporting surface. Thereafter, the conductive frame is cut to form a plurality of separated chip package structures.

97. 发明授权

US08853980B2 Soft-switching control circuit for DC motor 有权
标题翻译：直流电机软开关控制电路
公开(公告)号：US08853980B2
公开(公告)日：2014-10-07
申请号：US13211988
申请日：2011-08-17
申请人： Chia-Jung Chang , Wei-Line Chang
发明人： Chia-Jung Chang , Wei-Line Chang
IPC分类号： H02P6/18 , H02P6/16 , H02P6/20 , H02P6/00
CPC分类号： H02P6/008 , H02P6/16 , H02P6/182 , H02P6/20 , H02P6/26
摘要： A soft switching control circuit for a DC motor is provided. The soft switching control circuit has an absolute value generating circuit, a threshold voltage generating circuit, and a comparing circuit. The absolute value generating circuit outputs an absolute value signal according to a pair of Hall signals from the DC motor. The threshold voltage generating circuit receives a detected state signal and at least an end voltage of a coil of the DC motor for determining a current on the coil at an actual state change time defined by the detected state signal. According to the determination, the threshold voltage generating circuit outputs a threshold voltage with an adjusted voltage level. The comparing circuit compares the absolute value signal and the threshold voltage so as to generate a state change adjusting signal for modifying the actual state change time.
摘要翻译：提供一种用于直流电动机的软开关控制电路。软开关控制电路具有绝对值产生电路，阈值电压产生电路和比较电路。绝对值产生电路根据来自直流电动机的一对霍尔信号输出绝对值信号。阈值电压发生电路接收检测到的状态信号和直流电动机线圈的至少一个终端电压，用于在由检测到的状态信号定义的实际状态改变时间确定线圈上的电流。根据该判定，阈值电压生成电路输出具有调整后的电压电平的阈值电压。比较电路比较绝对值信号和阈值电压，以产生用于修改实际状态改变时间的状态改变调整信号。

98. 发明授权

US08629638B2 Lock protection and standby mode control circuit of motor driving apparatus 有权
标题翻译：电机驱动装置的锁保护和待机模式控制电路
公开(公告)号：US08629638B2
公开(公告)日：2014-01-14
申请号：US13179146
申请日：2011-07-08
申请人： Chia-Jung Chang , Wei-Line Chang
发明人： Chia-Jung Chang , Wei-Line Chang
IPC分类号： H02H99/00
CPC分类号： H02P7/29
摘要： A motor driving apparatus including a lock protection unit, a standby mode control unit, and a motor control circuit is provided. The lock protection unit receives a motor speed signal representing the rotation of the motor and generates a lock signal accordingly. The standby mode control unit receives a PWM signal and the lock signal and generates a standby mode control signal accordingly. The lock protection unit decides whether to stop generating the lock signal or not accordingly to the standby mode control signal. The motor control circuit controls the rotation of the motor according to the PWM signal and changes the operation mode according to the standby mode control signal and the lock signal.
摘要翻译：提供一种包括锁定保护单元，待机模式控制单元和马达控制电路的马达驱动装置。锁定保护单元接收表示电动机旋转的电动机速度信号，并相应地产生锁定信号。待机模式控制单元接收PWM信号和锁定信号，并相应地产生待机模式控制信号。锁定保护单元根据待机模式控制信号决定是否停止产生锁定信号。电机控制电路根据PWM信号控制电动机的旋转，并根据待机模式控制信号和锁定信号改变操作模式。

99. 发明申请

US20130313696A1 POWER SEMICONDUCTOR PACKAGE AND METHOD OF MANUFACTURING THE SAME 审中-公开
标题翻译：功率半导体封装及其制造方法
公开(公告)号：US20130313696A1
公开(公告)日：2013-11-28
申请号：US13684171
申请日：2012-11-22
申请人： NIKO SEMICONDUCTOR CO., LTD.
发明人： Chih-Cheng HSIEH , Chung-Ming LENG
IPC分类号： H01L23/34 , H01L21/50
CPC分类号： H01L23/34 , H01L21/50 , H01L21/561 , H01L23/4334 , H01L23/49524 , H01L23/49562 , H01L23/49575 , H01L24/37 , H01L24/40 , H01L24/97 , H01L2224/37011 , H01L2224/371 , H01L2224/37124 , H01L2224/40091 , H01L2224/40095 , H01L2224/40137 , H01L2224/40139 , H01L2224/40245 , H01L2224/40247 , H01L2224/48091 , H01L2224/48137 , H01L2224/48139 , H01L2224/49113 , H01L2224/49171 , H01L2224/73221 , H01L2224/83801 , H01L2224/84801 , H01L2924/00014 , H01L2924/13091 , H01L2924/181 , H01L2924/30107 , H01L2924/3011 , H01L2924/00 , H01L2224/45099 , H01L2924/00012
摘要： A power semiconductor package and a method of method of manufacturing the same are disclosed, where the power semiconductor package includes a lead frame, a first die, a second die and a single connecting strip. The lead frame includes a voltage plate, a grounding plate, an output plate, a first gate plate and a second gate plate. The first die is disposed on the voltage plate, and a high side transistor within the first die is connected to the first gate plate. The second die is disposed on the grounding plate, and a low side transistor within the second die is connected to the second gate plate. The connecting strip is disposed on the first and second dies and the output plate and electrically connects to a source of the high side transistor and a drain of the low side transistor.
摘要翻译：公开了功率半导体封装及其制造方法，其中功率半导体封装包括引线框架，第一管芯，第二管芯和单个连接条。引线框架包括电压板，接地板，输出板，第一栅极板和第二栅极板。第一管芯设置在电压板上，第一管芯内的高侧晶体管连接到第一栅极板。第二管芯设置在接地板上，第二管芯内的低侧晶体管连接到第二栅极板。连接条设置在第一和第二管芯和输出板上，并且电连接到高侧晶体管的源极和低侧晶体管的漏极。

100. 发明申请

US20130187566A1 CONVERSION CONTROL CIRCUIT AND CONVERTER THEREOF 有权
标题翻译：转换控制电路及其转换器
公开(公告)号：US20130187566A1
公开(公告)日：2013-07-25
申请号：US13543881
申请日：2012-07-08
申请人： TA-CHING HSU
发明人： TA-CHING HSU
IPC分类号： H05B37/02 , G05F1/00
CPC分类号： H05B33/0818 , H02M3/155 , Y02B20/346
摘要： A conversion control circuit for controlling the operation of a power transistor is disclosed. The conversion control circuit includes a voltage-regulating switch and a control unit. One end of the voltage-regulating switch connects to an external voltage input terminal while another end connects to a voltage-regulating capacitor. The conversion control circuit converts an input voltage inputted from the external voltage input terminal into a power voltage. The power voltage is for supplying operating power to the conversion control circuit. The control unit receives a feedback voltage signal to generate a voltage-regulating pulse signal and a turn-on pulse signal, which are used for controlling the operations of the voltage-regulating switch and the power transistor, respectively and for defining a charging period for charging the voltage-regulating capacitor. A converter including the described conversion control circuit is also disclosed.
摘要翻译：公开了一种用于控制功率晶体管的操作的转换控制电路。转换控制电路包括电压调节开关和控制单元。电压调节开关的一端连接到外部电压输入端子，另一端连接电压调节电容器。转换控制电路将从外部电压输入端子输入的输入电压转换为电源电压。电源电压用于向转换控制电路提供工作电源。控制单元接收反馈电压信号以产生分别用于控制电压调节开关和功率晶体管的操作的电压调节脉冲信号和导通脉冲信号，并且用于定义用于对调压电容充电。还公开了包括所描述的转换控制电路的A转换器。

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