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91. 发明授权

US06734518B2 Surface treatment of DARC films to reduce defects in subsequent cap layers 失效
标题翻译： DARC薄膜的表面处理，以减少后续盖层的缺陷
公开(公告)号：US06734518B2
公开(公告)日：2004-05-11
申请号：US09924759
申请日：2001-08-08
申请人： Zhiping Yin , Gurtej Singh Sandhu
发明人： Zhiping Yin , Gurtej Singh Sandhu
IPC分类号： H01L310232
CPC分类号： H01L21/3105 , G03F7/091 , H01L21/0276 , H01L21/3145 , H01L21/32139
摘要： The present invention comprises a method for preventing particle formation in a substrate overlying a DARC coating. The method comprises providing a semiconductor construct. A DARC coating is deposited on the construct with a plasma that comprises a silicon-based compound and N2O. The DARC coating is exposed to an atmosphere that effectively prevents a formation of defects in the substrate layer. The exposed DARC coating is overlayed with the substrate.
摘要翻译：本发明包括防止在覆盖DARC涂层的基板中形成粒子的方法。该方法包括提供半导体构造。使用包含硅基化合物和N 2 O的等离子体在构建体上沉积DARC涂层。 DARC涂层暴露于有效防止在基底层中形成缺陷的气氛。暴露的DARC涂层与基材重叠。

92. 发明授权

US06573175B1 Dry low k film application for interlevel dielectric and method of cleaning etched features 失效
标题翻译：干燥低k膜应用于层间电介质和清洗蚀刻特征的方法
公开(公告)号：US06573175B1
公开(公告)日：2003-06-03
申请号：US09998729
申请日：2001-11-30
申请人： Zhiping Yin , Gary Chen
发明人： Zhiping Yin , Gary Chen
IPC分类号： H01L214763
CPC分类号： H01L21/76814 , H01L21/02063 , H01L21/0276 , H01L21/31111 , H01L21/31116 , H01L21/31633 , H01L21/76802 , H01L21/76807
摘要： Methods of selectively removing post-etch polymer material and dielectric antireflective coatings (DARC) without substantially etching an underlying carbon-doped low k dielectric layer, and compositions for the selective removal of a DARC layer and post-etch polymer material are provided. A composition comprising trimethylammonium fluoride is used to selectively etch a dielectric antireflective coating layer overlying a low k dielectric layer at an etch rate of the antireflective coating layer to the low k dielectric layer that is greater than the etch rate of the antireflective coating to a TEOS layer. The method and composition are useful, for example, in the formation of high aspect ratio openings in low k (carbon doped) silicon oxide dielectric layers and maintaining the integrity of the dimensions of the formed openings during a cleaning step to remove a post-etch polymer and antireflective coating.
摘要翻译：提供了选择性地去除蚀刻后聚合物材料和介电抗反射涂层（DARC）而不基本上蚀刻下面的掺碳低k电介质层的方法，以及用于选择性去除DARC层和蚀刻后聚合物材料的组合物。使用包含三甲基氟化铵的组合物以抗反射涂层到低k电介质层的蚀刻速率选择性地蚀刻覆盖低k电介质层的电介质抗反射涂层，其大于抗反射涂层对TEOS的蚀刻速率层。该方法和组合物可用于例如在低k（碳掺杂）氧化硅介电层中形成高纵横比的开口，并且在清洁步骤期间保持形成的开口的尺寸的完整性以去除蚀刻后聚合物和抗反射涂层。

93. 发明授权

US06461970B1 Method of reducing defects in anti-reflective coatings and semiconductor structures fabricated thereby 失效
标题翻译：减少由此制成的抗反射涂层和半导体结构中的缺陷的方法
公开(公告)号：US06461970B1
公开(公告)日：2002-10-08
申请号：US09095477
申请日：1998-06-10
申请人： Zhiping Yin
发明人： Zhiping Yin
IPC分类号： H01L21302
CPC分类号： H01L23/5329 , H01L21/0276 , H01L21/3145 , H01L2924/0002 , Y10S438/905 , H01L2924/00
摘要： A method of fabricating a substantially smooth-surfaced anti-reflective coating on a semiconductor device structure including generating a plasma from an inert gas in a process chamber in which the substantially smooth anti-reflective coating is to be deposited. The anti-reflective coating may be a dielectric anti-reflective coating (DARC) which includes silicon, oxygen and nitrogen, and is preferably of the general formula SixOyNz, where x equals 0.40 to 0.65, y equals 0.02 to 0.56 and z equals 0.05 to 0.33. Preferably, x+y+z equals one. The method may also include fabricating a silicon nitride layer over the anti-reflective coating. A semiconductor device which includes a silicon nitride layer over an anti-reflective coating that has been fabricated in accordance with the inventive method has a density of less than about 40,000 particles or surface roughness features in the silicon nitride of about 120-150 nanometers dimension per eight inch wafer. Accordingly, a mask that is subsequently formed over the silicon nitride layer has a substantially uniform thickness and is substantially distortion-free.
摘要翻译：一种在半导体器件结构上制造基本上光滑表面的抗反射涂层的方法，包括在其中沉积基本上平滑的抗反射涂层的处理室中的惰性气体产生等离子体。抗反射涂层可以是包括硅，氧和氮的电介质抗反射涂层（DARC），并且优选为通式SixOyNz，其中x等于0.40至0.65，y等于0.02至0.56，z等于0.05至 0.33。优选地，x + y + z等于1。该方法还可以包括在抗反射涂层上制造氮化硅层。在根据本发明方法制造的抗反射涂层上包括氮化硅层的半导体器件具有小于约40,000个颗粒的密度或氮化硅中的表面粗糙度特征，其尺寸为约120-150纳米八寸晶圆。因此，随后在氮化硅层上形成的掩模具有基本均匀的厚度并且基本上无变形。

94. 发明授权

US08350939B2 Vertical 4-way shared pixel in a single column with internal reset and no row select 有权
公开(公告)号：US08350939B2
公开(公告)日：2013-01-08
申请号：US12285308
申请日：2008-10-01
申请人： Zhiping Yin , Xiaofeng Fan , Xiangli Li
发明人： Zhiping Yin , Xiaofeng Fan , Xiangli Li
IPC分类号： H04N3/14 , H04N5/335
CPC分类号： H04N5/3745 , H01L27/14609 , H01L27/14612 , H01L27/14641 , H01L27/14645 , H04N5/3575
摘要： A method and apparatus for reducing space and pixel circuit complexity by using a 4-way shared vertically aligned pixels in a same column. The at least four pixels in the pixel circuit share a reset transistor and a source follower transistor, can have a plurality of same colored pixels and a plurality of colors, but do not include a row select transistor.

95. 发明授权

US07924333B2 Method and apparatus providing shared pixel straight gate architecture 有权
标题翻译：提供共享像素直门架构的方法和装置
公开(公告)号：US07924333B2
公开(公告)日：2011-04-12
申请号：US11892004
申请日：2007-08-17
申请人： Zhiping Yin , Xiaofeng Fan
发明人： Zhiping Yin , Xiaofeng Fan
IPC分类号： H04N3/14 , H04N5/335 , H01L27/00
CPC分类号： H01L27/14603 , H01L27/14641 , H01L27/14643 , H04N5/37457
摘要： Methods and apparatuses using four-way-shared readout circuits to increase pixel fill factor. Embodiments consolidate circuits from several pixels, reducing the number of components in each pixel and this increasing the fill factor of each pixel. Additionally, embodiments use “straight gate” transfer gates to increase the readout speed and symmetry of the smaller pixels.
摘要翻译：使用四路共享读出电路的方法和装置来增加像素填充因子。实施例从几个像素整合电路，减少每个像素中的分量数量，并增加每个像素的填充因子。此外，实施例使用“直门”传输门来增加较小像素的读出速度和对称性。

96. 发明授权

US07626238B2 Semiconductor devices having antireflective material 失效
标题翻译：具有抗反射材料的半导体器件
公开(公告)号：US07626238B2
公开(公告)日：2009-12-01
申请号：US11218045
申请日：2005-08-31
申请人： Richard Holscher , Zhiping Yin , Tom Glass
发明人： Richard Holscher , Zhiping Yin , Tom Glass
IPC分类号： H01L31/0232
CPC分类号： H01L21/0276 , G03F7/091 , H01L21/3086 , Y10S430/151
摘要： In one aspect, the invention includes a semiconductor processing method. An antireflective material layer is formed over a substrate. At least a portion of the antireflective material layer is annealed at a temperature of greater than about 400° C. A layer of photoresist is formed over the annealed antireflective material layer. The layer of photoresist is patterned. A portion of the antireflective material layer unmasked by the patterned layer of photoresist is removed. In another aspect, the invention includes the following semiconductor processing. An antireflective material layer is formed over a substrate. The antireflective material layer is annealed at a temperature of greater than about 400° C. A layer of photoresist is formed over the annealed antireflective material layer. Portions of the layer of photoresist are exposed to radiation waves. Some of the radiation waves are absorbed by the antireflective material during the exposing.
摘要翻译：一方面，本发明包括半导体处理方法。在基板上形成防反射材料层。抗反射材料层的至少一部分在大于约400℃的温度下退火。在退火的抗反射材料层上形成一层光致抗蚀剂。图案化光刻胶层。除去由图案化的光致抗蚀剂层掩蔽的抗反射材料层的一部分。另一方面，本发明包括以下半导体处理。在基板上形成防反射材料层。抗反射材料层在大于约400℃的温度下退火。在退火的抗反射材料层上形成一层光致抗蚀剂。光致抗蚀剂层的一部分暴露于辐射波。一些辐射波在曝光期间被抗反射材料吸收。

97. 发明授权

US07541635B2 Semiconductor fabrication using a collar 失效
标题翻译：使用领的半导体制造
公开(公告)号：US07541635B2
公开(公告)日：2009-06-02
申请号：US11490770
申请日：2006-07-21
申请人： Kevin Torek , Kevin Shea , Niraj B. Rana , Zhiping Yin
发明人： Kevin Torek , Kevin Shea , Niraj B. Rana , Zhiping Yin
IPC分类号： H01L27/108 , H01L29/94
CPC分类号： H01L27/10852 , H01L23/3171 , H01L2924/0002 , H01L2924/00
摘要： In one embodiment, a method includes selectively depositing a collar material between a number of memory containers. The collar material along a side of a first memory container of the number of memory containers is in contact with the collar material along a side of a second memory container. An opening exists between the collar material along a corner of the memory container and the collar material along a corner of a third memory container.
摘要翻译：在一个实施例中，一种方法包括在多个存储器容器之间选择性地沉积套环材料。沿着存储容器数量的第一存储容器的一侧的套环材料沿着第二存储容器的侧面与套环材料接触。在沿着第一存储容器的角部的套环材料和沿着第三存储容器的角部的套环材料之间存在开口。

98. 发明授权

US07521354B2 Low k interlevel dielectric layer fabrication methods 有权
公开(公告)号：US07521354B2
公开(公告)日：2009-04-21
申请号：US11266914
申请日：2005-11-04
申请人： Weimin Li , Zhiping Yin , William Budge
发明人： Weimin Li , Zhiping Yin , William Budge
IPC分类号： H01L21/31
CPC分类号： H01L21/02126 , H01L21/02167 , H01L21/0217 , H01L21/02211 , H01L21/02274 , H01L21/02323 , H01L21/0234 , H01L21/31633 , H01L21/76825 , H01L21/76826 , H01L21/76828
摘要： A low k interlevel dielectric layer fabrication method includes providing a substrate having integrated circuitry at least partially formed thereon. An oxide comprising interlevel dielectric layer comprising carbon and having a dielectric constant no greater than 3.5 is formed over the substrate. After forming the carbon comprising dielectric layer, it is exposed to a plasma comprising oxygen effective to reduce the dielectric constant to below what it was prior to said exposing. A low k interlevel dielectric layer fabrication method includes providing a substrate having integrated circuitry at least partially formed thereon. In a chamber, an interlevel dielectric layer comprising carbon and having a dielectric constant no greater than 3.5 is plasma enhanced chemical vapor deposited over the substrate at subatmospheric pressure. After forming the carbon comprising dielectric layer, it is exposed to a plasma comprising oxygen at a subatmospheric pressure effective to reduce the dielectric constant by at least 10% below what it was prior to said exposing. The exposing occurs without removing the substrate from the chamber between the depositing and the exposing, and pressure within the chamber is maintained at subatmospheric between the depositing and the exposing.

99. 发明申请

US20080008942A1 PREVENTION OF PHOTORESIST SCUMMING 有权
标题翻译：防止光电子扫描
公开(公告)号：US20080008942A1
公开(公告)日：2008-01-10
申请号：US11856556
申请日：2007-09-17
申请人： Zhiping Yin , Jingyi Bai
发明人： Zhiping Yin , Jingyi Bai
IPC分类号： G03F1/00
CPC分类号： G03F7/11 , G03F7/0045 , G03F7/091
摘要： A photo acid generator (PAG) or an acid is used to reduce resist scumming and footing. Diffusion of acid from photoresist into neighbors causes a decreased acid level, and thus causes resist scumming. An increased acid layer beneath the resist prevents acid diffusion. In one embodiment, the increased acid layer is a layer of spun-on acid or PAG dissolved in aqueous solution. In another embodiment, the increased acid layer is a hard mask material with a PAG or an acid mixed into the material. The high acid content inhibits the diffusion of acid from the photoresist into neighboring layers, and thus substantially reduces photoresist scumming and footing.
摘要翻译：使用光酸产生剂（PAG）或酸来降低抗污垢和基底。酸从光致抗蚀剂扩散到邻居会导致酸水平降低，从而导致抗污垢浮渣。抗蚀剂下面的增加的酸层防止酸扩散。在一个实施方案中，增加的酸层是溶解在水溶液中的纺丝酸或PAG层。在另一个实施方案中，增加的酸层是具有混合到该材料中的PAG或酸的硬掩模材料。高酸含量抑制酸从光致抗蚀剂扩散到相邻层中，从而基本上减少光致抗蚀剂的浮渣和基底。

100. 发明授权

US07315074B2 Use of DAR coating to modulate the efficiency of laser fuse blows 有权
标题翻译：使用DAR涂层来调节激光熔丝的效率
公开(公告)号：US07315074B2
公开(公告)日：2008-01-01
申请号：US11140859
申请日：2005-05-31
申请人： Mark Fischer , Zhiping Yin , Thomas R. Glass , Kunal R. Parekh , Gurtej Singh Sandhu
发明人： Mark Fischer , Zhiping Yin , Thomas R. Glass , Kunal R. Parekh , Gurtej Singh Sandhu
IPC分类号： H01L29/00
CPC分类号： H01L23/5256 , H01L23/5258 , H01L2924/0002 , H01L2924/00
摘要： The present invention relates to a laser fuse. The laser fuse comprises an element comprising a heat conductive material. The fuse also includes an absorption element comprising a material with an adjustable capacity for heat or light absorption that overlays the heat conductive element. The fuse also includes an outer insulating element that overlays and encloses the heat conductive element and the absorption element.
摘要翻译：本发明涉及一种激光熔丝。激光熔丝包括包含导热材料的元件。保险丝还包括吸收元件，该吸收元件包括具有与热传导元件重叠的热或光吸收的可调节容量的材料。保险丝还包括覆盖并包围导热元件和吸收元件的外绝缘元件。

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