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91. 发明申请

US20090148704A1 VAPOR-PHASE PROCESS APPARATUS, VAPOR-PHASE PROCESS METHOD, AND SUBSTRATE 失效
标题翻译：蒸汽相工艺装置，蒸汽相工艺方法和基材
公开(公告)号：US20090148704A1
公开(公告)日：2009-06-11
申请号：US12330904
申请日：2008-12-09
申请人： Eiryo TAKASUKA , Toshio Ueda , Toshiyuki Kuramoto , Masaki Ueno
发明人： Eiryo TAKASUKA , Toshio Ueda , Toshiyuki Kuramoto , Masaki Ueno
IPC分类号： B32B9/04 , C23C16/455 , C23C16/06 , C23C16/00
CPC分类号： C23C16/455 , C23C16/4401 , C23C16/45517 , C23C16/45519 , C23C16/45565 , C30B25/165 , C30B29/403 , H01J37/3244 , H01J37/32449 , H01J37/32541 , Y10T428/31504
摘要： A vapor-phase process apparatus and a vapor-phase process method capable of satisfactorily maintaining quality of processes even when different types of processes are performed are obtained. A vapor-phase process apparatus includes a process chamber, gas supply ports serving as a plurality of gas introduction portions, and a gas supply portion (a gas supply member, a pipe, a flow rate control device, a pipe, and a buffer chamber). The process chamber allows flow of a reaction gas therein. The plurality of gas supply ports are formed in a wall surface (upper wall) of the process chamber along a direction of flow of the reaction gas. The gas supply portion can supply a gas into the process chamber at a different flow rate from each of one gas supply port and another gas supply port different from that one gas supply port among the plurality of gas supply ports.
摘要翻译：获得即使进行不同类型的处理也能够令人满意地保持处理质量的气相处理装置和气相处理方法。气相处理装置包括处理室，用作多个气体导入部的气体供给口，以及气体供给部（气体供给部件，管道，流量控制装置，管道，缓冲室）。处理室允许反应气体在其中流动。多个气体供给口沿着反应气体的流动方向形成在处理室的壁面（上壁）中。气体供给部能够以与多个气体供给口中的一个气体供给口不同的一个气体供给口和另一个气体供给口中的每一个以不同的流量向处理室供给气体。

92. 发明申请

US20090108407A1 Oxygen-doped n-type gallium nitride freestanding single crystal substrate 有权
标题翻译：氧掺杂n型氮化镓独立单晶衬底
公开(公告)号：US20090108407A1
公开(公告)日：2009-04-30
申请号：US12292534
申请日：2008-11-20
申请人： Kensaku Motoki , Masaki Ueno
发明人： Kensaku Motoki , Masaki Ueno
IPC分类号： H01L21/20 , H01B1/02 , H01L29/207
CPC分类号： C30B23/00 , C30B23/02 , C30B25/00 , C30B25/02 , C30B29/403 , C30B29/406 , C30B29/60 , C30B33/00 , H01L21/02389 , H01L21/02395 , H01L21/02433 , H01L21/0254 , H01L21/02576 , H01L21/02609 , H01L21/0262 , H01L29/2003 , H01L29/207
摘要： Oxygen can be doped into a gallium nitride crystal by preparing a non-C-plane gallium nitride seed crystal, supplying material gases including gallium, nitrogen and oxygen to the non-C-plane gallium nitride seed crystal, growing a non-C-plane gallium nitride crystal on the non-C-plane gallium nitride seed crystal and allowing oxygen to infiltrating via a non-C-plane surface to the growing gallium nitride crystal.Otherwise, oxygen can be doped into a gallium nitride crystal by preparing a C-plane gallium nitride seed crystal or a three-rotationally symmetric plane foreign material seed crystal, supplying material gases including gallium, nitrogen and oxygen to the C-plane gallium nitride seed crystal or the three-rotationally symmetric foreign seed crystal, growing a faceted C-plane gallium nitride crystal having facets of non-C-planes on the seed crystal, maintaining the facets on the C-plane gallium nitride crystal and allowing oxygen to infiltrating via the non-C-plane facets to the gallium nitride crystal.
摘要翻译：可以通过制备非C面氮化镓晶体，向非C面氮化镓晶种提供包括镓，氮和氧的材料气体，将氧可以掺杂到氮化镓晶体中，生长非C面在非C面氮化镓晶种上形成氮化镓晶体，并允许氧通过非C面表面渗入生长的氮化镓晶体。否则，可以通过制备C面氮化镓晶种或三旋转对称平面异物籽晶将氧气掺杂到氮化镓晶体中，将包括镓，氮和氧的材料气体供应到C面氮化镓晶种晶体或三旋转对称的外来晶种，在晶种上生长具有非C面的小面的C面氮化镓晶体，保持C面氮化镓晶体上的刻面，并允许氧渗透通过非C面面到氮化镓晶体。

93. 发明申请

US20080029783A1 Method of fabricating single crystal gallium nitride semiconductor substrate, nitride gallium semiconductor substrate and nitride semiconductor epitaxial substrate 有权
标题翻译：制造单晶氮化镓半导体衬底，氮化镓半导体衬底和氮化物半导体外延衬底的方法
公开(公告)号：US20080029783A1
公开(公告)日：2008-02-07
申请号：US11498155
申请日：2006-08-03
申请人： Masaki Ueno
发明人： Masaki Ueno
IPC分类号： H01L31/00
CPC分类号： H01L29/34 , C30B25/18 , H01L29/045 , H01L29/0657 , H01L29/2003 , H01L33/16 , Y10T83/04
摘要： A method of fabricating a single crystal gallium nitride substrate the step of cutting an ingot of single crystal gallium nitride along predetermined planes to make one or more single crystal gallium nitride substrates. The ingot of single crystal gallium nitride is grown by vapor phase epitaxy in a direction of a predetermined axis. Each predetermined plane is inclined to the predetermined axis. Each substrate has a mirror polished primary surface. The primary surface has a first area and a second area. The first area is between an edge of the substrate and a line 3 millimeter away from the edge. The first area surrounds the second area. An axis perpendicular to the primary surface forms an off-angle with c-axis of the substrate. The off-angle takes a minimum value at a first position in the first area of the primary surface.
摘要翻译：制造单晶氮化镓衬底的方法是将单晶氮化镓锭沿着预定平面切割以制造一个或多个单晶氮化镓衬底的步骤。单晶氮化镓锭通过气相外延沿预定轴线的方向生长。每个预定平面相对于预定轴线倾斜。每个基板具有镜面抛光的主表面。主表面具有第一区域和第二区域。第一区域位于衬底的边缘和距离边缘3毫米的线之间。第一个区域围绕第二个区域。垂直于主表面的轴与衬底的c轴形成偏角。偏角在主表面的第一区域中的第一位置处具有最小值。

94. 发明授权

US07125044B2 Method and device for folding up air bag, and air bag 有权
公开(公告)号：US07125044B2
公开(公告)日：2006-10-24
申请号：US11114866
申请日：2005-04-26
申请人： Kazuyoshi Nishijima , Tetsuji Endo , Kazuhiro Kaneko , Toshiyuki Sugiyama , Mikio Ochiai , Yoshinori Goto , Masaki Ueno , Masahito Ishizuka
发明人： Kazuyoshi Nishijima , Tetsuji Endo , Kazuhiro Kaneko , Toshiyuki Sugiyama , Mikio Ochiai , Yoshinori Goto , Masaki Ueno , Masahito Ishizuka
IPC分类号： B60R21/16
CPC分类号： B60R21/237 , B60R21/217 , B60R2021/2375
摘要： An air bag is unfolded on a planar surface and is inflated with air. The air bag is loosely sandwiched between the upper and lower blades that are arranged in a radial configuration. Movable blocks progress toward the center to fold the upper and lower panels of the air bag against the central part of the air bag. The resulting central folded part of the air bag has a wave-like configuration, and the upper and lower panels are separated from each other. The ear-like portions of the air bag are wound around the central folded part of the air bag that is folded in a wave-like configuration. Then, the central part of the air bag is pressed downward to complete the folding process. Gas can be supplied smoothly from the inlet port to the periphery when the air bag is reinflated. The method for folding the air bag is simple, and the air bag can be inflated quickly.

95. 发明授权

US06994664B2 Method for folding up an air bag 失效
标题翻译：折叠气囊的方法
公开(公告)号：US06994664B2
公开(公告)日：2006-02-07
申请号：US10257416
申请日：2001-04-11
申请人： Kazuyoshi Nishijima , Tetsuji Endo , Kazuhiro Kaneko , Toshiyuki Sugiyama , Mikio Ochiai , Yoshinori Goto , Masaki Ueno , Masahito Ishizuka
发明人： Kazuyoshi Nishijima , Tetsuji Endo , Kazuhiro Kaneko , Toshiyuki Sugiyama , Mikio Ochiai , Yoshinori Goto , Masaki Ueno , Masahito Ishizuka
IPC分类号： B31F1/00
CPC分类号： B60R21/237 , B60R21/217 , B60R2021/2375
摘要： An air bag is unfolded on a planar surface and is inflated with air. The air bag is loosely sandwiched between the upper and lower blades that are arranged in a radial configuration. Movable blocks progress toward the center to fold the upper and lower panels of the air bag against the central part of the air bag. The resulting central folded part of the air bag has a wave-like configuration, and the upper and lower panels are separated from each other. The ear-like portions of the air bag are wound around the central folded part of the air bag that is folded in a wave-like configuration. Then, the central part of the air bag is pressed downward to complete the folding process. Gas can be supplied smoothly from the inlet port to the periphery when the air bag is reinflated. The method for folding the air bag is simple, and the air bag can be inflated quickly.
摘要翻译：气囊在平面上展开并用空气充气。安全气囊松散地夹在被布置成径向构型的上下刀片之间。可移动块朝向中心前进，将气囊的上下面板抵靠气囊的中心部分折叠。所得到的气囊的中央折叠部分具有波状构造，并且上下面板彼此分离。安全气囊的耳状部分缠绕在折叠成波状构造的气囊的中央折叠部分上。然后，将气囊的中央部分向下压，完成折叠过程。当气囊被重新充气时，气体可以从入口平滑地供应到周边。折叠气囊的方法简单，气囊可以快速充气。

96. 发明授权

US06935099B2 Deteriorated state evaluation device of exhaust emission control equipment 失效
标题翻译：废气排放控制设备劣化状态评估装置
公开(公告)号：US06935099B2
公开(公告)日：2005-08-30
申请号：US10484817
申请日：2002-08-23
申请人： Yasuyuki Miyahara , Masahiro Sato , Masaki Ueno , Kenichi Ohmori
发明人： Yasuyuki Miyahara , Masahiro Sato , Masaki Ueno , Kenichi Ohmori
IPC分类号： F01N3/08 , F01N11/00 , F01N3/00
CPC分类号： F01N3/0835 , F01N3/0807 , F01N11/00 , F01N2550/03 , F01N2560/028 , F01N2570/12 , Y02T10/20 , Y02T10/47
摘要： After an engine 1 has started to operate, a state in which a humidity represented by an output of a humidity sensor 19 downstream of a hydrocarbon adsorbent 7 takes a minimum value is sequentially searched for, and a timing at which the humidity changes from the minimum value to a monotonously increasing state is grasped as a timing at which the adsorption of moisture and hydrocarbons by the hydrocarbon adsorbent 7 is saturated. After the engine has started to operate, a parameter representing an integrated amount of moisture given to the hydrocarbon adsorbent 7 by the exhaust gas is sequentially generated, and a deteriorated state of the hydrocarbon adsorbent 7 is evaluated based on the value of the parameter at the timing at which the adsorption is saturated. The deteriorated state of the hydrocarbon absorbent can thus accurately be evaluated by an inexpensive arrangement which employs the humidity sensor 19 disposed downstream of the hydrocarbon adsorbent 7.
摘要翻译：在发动机1开始运行之后，依次搜索由碳氢化合物吸附剂7下游的湿度传感器19的输出表示的湿度为最小值的状态，以及湿度从最小值变化的时刻将作为单一增加状态的值作为将烃类吸附剂7吸收水分和烃类饱和的时刻进行掌握。在发动机开始运转之后，依次产生表示通过废气赋予烃类吸附剂7的一体化的水分量的参数，根据该吸附剂7的参数值，评价烃吸附剂7的劣化状态吸附饱和的时间。因此，可以通过使用设置在烃吸附剂7的下游的湿度传感器19的廉价的装置来精确地评价烃类吸收剂的劣化状态。

97. 发明申请

US20050133010A1 Fuel piping 失效
标题翻译：燃油管道
公开(公告)号：US20050133010A1
公开(公告)日：2005-06-23
申请号：US11001006
申请日：2004-12-02
申请人： Katsuichi Yagisawa , Katsunori Komuro , Yasuaki Nagai , Toshikazu Saito , Masaki Ueno , Minoru Ueda
发明人： Katsuichi Yagisawa , Katsunori Komuro , Yasuaki Nagai , Toshikazu Saito , Masaki Ueno , Minoru Ueda
IPC分类号： F02M55/02 , B62J37/00 , F02B61/02 , F02D33/00 , F02M37/00 , F16L3/12 , F16L3/127 , F16L3/16 , F16L9/147 , F16L11/06 , F16L11/12 , F16L33/00 , F16L33/28 , F16L37/098 , F16L37/12 , F16L58/10
CPC分类号： F02D33/006 , B62J37/00 , F02B61/02 , F02M37/007 , F16L3/127 , F16L3/16 , F16L9/147 , F16L11/12 , F16L37/0987 , F16L58/1054 , F16L2011/047
摘要： To manufacture fuel piping for connecting a fuel tank and a drive unit including an engine using a resin material at a low cost and to cause the fuel piping to suitably follow the movement of the fuel tank and the drive unit when the vehicle is being operated. A fuel piping includes connectors at both ends of a pipe member formed of resin material into a thin tubular shape for connecting between a fuel tank and a fuel injection apparatus for supplying fuel to an engine of a two-wheel vehicle or the like via the connectors. One or more bent portions are formed at the midsection of the pipe member of the fuel piping.
摘要翻译：为了制造燃料管道，用于以低成本连接燃料箱和包括使用树脂材料的发动机的驱动单元，并且使得燃料管道在车辆运行时适当地跟随燃料箱和驱动单元的运动。燃料管道包括由树脂材料形成的管状构件的两端的连接器，形成为薄的管状，用于连接燃料箱和燃料喷射装置，用于通过连接器向两轮车辆等的发动机供应燃料。一个或多个弯曲部分形成在燃料管道的管构件的中部。

98. 发明申请

US20050095861A1 GaN single-crystal substrate, nitride type semiconductor epitaxial substrate, nitride type semiconductor device, and methods of making the same 审中-公开
标题翻译： GaN单晶衬底，氮化物型半导体外延衬底，氮化物型半导体器件及其制造方法
公开(公告)号：US20050095861A1
公开(公告)日：2005-05-05
申请号：US10997887
申请日：2004-11-29
申请人： Masaki Ueno , Eiryo Takasuka , Soo-Jin Chua , Peng Chen
发明人： Masaki Ueno , Eiryo Takasuka , Soo-Jin Chua , Peng Chen
IPC分类号： C30B29/38 , C30B25/02 , H01L21/20 , H01L21/205 , H01L33/32 , H01S5/323 , H01L21/00 , H01L21/302 , H01L21/461
CPC分类号： C30B25/02 , C30B29/403 , C30B29/406 , H01L21/02389 , H01L21/0254 , H01L21/02658 , H01L21/3245 , H01L21/3247
摘要： The GaN single-crystal substrate 11 in accordance with the present invention has a polished surface subjected to heat treatment for at least 10 minutes at a substrate temperature of at least 1020° C. in a mixed gas atmosphere containing at least an NH3 gas. As a consequence, an atomic rearrangement is effected in the surface of the substrate 11 in which a large number of minute defects are formed by polishing, so as to flatten the surface of the substrate 11. Therefore, the surface of an epitaxial layer 12 formed on the substrate 11 can be made flat.
摘要翻译：根据本发明的GaN单晶衬底11，在至少含有NH 3的混合气体气氛中，在至少1020℃的衬底温度下，经过热处理至少10分钟的抛光表面， 3气体。结果，在通过研磨形成大量微小缺陷的基板11的表面中进行原子重排，从而使基板11的表面变平。因此，形成外延层12的表面可以使基板11平坦化。

99. 发明授权

US06406061B1 Method of folding air bag body 失效
标题翻译：气袋折叠方法
公开(公告)号：US06406061B1
公开(公告)日：2002-06-18
申请号：US09817610
申请日：2001-03-26
申请人： Kazuyoshi Nishijima , Tetsuji Endo , Kazuhiro Kaneko , Toshiyuki Sugiyama , Yoshinori Goto , Masaki Ueno , Masahito Ishizuka , Mikio Ochiai
发明人： Kazuyoshi Nishijima , Tetsuji Endo , Kazuhiro Kaneko , Toshiyuki Sugiyama , Yoshinori Goto , Masaki Ueno , Masahito Ishizuka , Mikio Ochiai
IPC分类号： B60R2124
CPC分类号： B60R21/237 , B60R21/217 , B60R2021/2375
摘要： An air bag body (1) is expanded by charging an air therein after being expanded in a flat surface shape. Next, by gently gripping the air bag body (1) by upper and lower blades (26, 25) radially arranged in a radial direction of the air bag body (1), a height in a radial direction of the air bag body (1) is linearly restricted along the upper and lower blades (26, 25). Next, a plurality of movable blocks (24) are forward moved toward a center of the air bag body (1), and upper and lower panels (12, 11) of the air bag body (1) are accumulated. At this time, the upper and lower panels (12, 11) of the air bag body (1) are folded in a state of being apart from each other so as to form a wave shape. Next, the air bag body (1) is rotated, a portion left in a tab shape is wound around a periphery, and a center protruding portion of the air bag body (1) is pressed from an upper side, whereby a front surface deploying portion (35) is formed. When supplying gas to the folded air bag body (1), the front surface deploying portion (35) rapidly deploys so as to break a cover (5) and the gas is smoothly supplied to a peripheral edge portion (14), whereby it is possible to smoothly and rapidly deploy the air bag body (1).
摘要翻译：通过在平坦的表面形状膨胀之后，通过在其中充入空气来使气囊体（1）膨胀。接下来，通过沿着气囊主体（1）的径向径向配置的上下叶片（26,25）轻轻地夹持气囊体（1），气囊体（1）的径向高度）沿着上下叶片（26,25）线性地限制。接下来，多个可动块（24）向气囊主体（1）的中心向前移动，并且气囊体（1）的上下面板（12,11）蓄积。此时，气袋主体（1）的上下面板（12,11）以彼此分离的状态折叠成波形。接下来，使气囊体（1）旋转，将一部分呈片状的部分卷绕在周围，并且从上侧按压安全气囊主体（1）的中心突出部，由此前面部署形成部分（35）。当向折叠的气囊体（1）供给气体时，前表面展开部（35）快速地展开以使盖（5）破裂，气体平滑地供给到周缘部（14），由此，可以平稳且快速地展开气囊体（1）。

100. 发明授权

US08829545B2 Group III nitride semiconductor light-emitting device 有权
标题翻译： III族氮化物半导体发光器件
公开(公告)号：US08829545B2
公开(公告)日：2014-09-09
申请号：US12119015
申请日：2008-05-12
申请人： Masaki Ueno , Takashi Kyono , Yusuke Yoshizumi
发明人： Masaki Ueno , Takashi Kyono , Yusuke Yoshizumi
IPC分类号： H01L33/00
CPC分类号： H01L33/32
摘要： A group III nitride semiconductor light-emitting device comprises an n-type gallium nitride-based semiconductor layer, a first p-type AlXGa1-XN (0≦X
摘要翻译： III族氮化物半导体发光器件包括n型氮化镓基半导体层，第一p型AlXGa1-XN（0＆lt; NlE; X <1）层，包含InGaN层的有源层，和第三p型AlZGa1-XN层（0＆amp; nlE; Z＆lt; EL; Y＆lt; NlE; X <1）和与第三p型AlZGa1相接触的p电极的第二p型AlYGa1-YN（0＆nlE; Y＆ -ZN层。有源层设置在n型氮化镓基半导体层和第一p型AlXGa1-XN层之间。在第一p型AlXGa1-XN层上设置第二p型AlYGa1-YN（0＆nlE; Y＆nlE; X <1）层。第二p型AlYGa1-YN层的p型掺杂剂浓度大于第一p型AlXGa1-XN层的p型掺杂剂浓度。在第二p型AlYGa1-YN层上设置第三p型AlZGa1-ZN层（0＆nlE; Z＆lt; Y; Y＆nlE; X <1）。第二p型AlYGa1-YN层的p型掺杂剂浓度大于第三p型AlZGa1-ZN层的p型掺杂剂浓度。

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