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91. 发明授权

US08197090B2 LED package and backlight unit using the same 有权
标题翻译： LED封装和背光单元使用相同
公开(公告)号：US08197090B2
公开(公告)日：2012-06-12
申请号：US12832469
申请日：2010-07-08
申请人： Dae Yeon Kim , Young Sam Park
发明人： Dae Yeon Kim , Young Sam Park
IPC分类号： F21V5/04
CPC分类号： H01L33/58 , H01L33/46
摘要： The invention relates to an LED package having a large beam angle of light emitted from an LED, simplifying a shape of a lens and an assembly process, and to a backlight unit using the same. The LED package includes a housing with a seating recess formed therein and at least one LED seated in the seating recess. The LED package also includes a lens having a predetermined sag on an upper side thereof, covering an upper part of the LED. The LED package and the backlight unit using the same can emit light uniformly without bright spots formed in an output screen, uses a simpler shaped lens with an increased beam angle, and minimizes a color mixing region to achieve miniaturization.
摘要翻译：本发明涉及一种LED封装，其具有从LED发射的大的光束角度，简化透镜的形状和组装过程，以及使用该LED封装的背光单元。 LED封装包括壳体，其具有形成在其中的座部凹部和位于座部凹部中的至少一个LED。 LED封装还包括在其上侧具有预定凹陷的透镜，覆盖LED的上部。 LED封装和使用该LED封装的背光单元可以均匀地发光而不会在输出屏幕中形成亮点，使用具有增大的光束角的更简单形状的透镜，并且使混色区域最小化以实现小型化。

92. 发明授权

US08071396B2 Embedded phase-change memory and method of fabricating the same 有权
标题翻译：嵌入式相变存储器及其制造方法
公开(公告)号：US08071396B2
公开(公告)日：2011-12-06
申请号：US12942255
申请日：2010-11-09
申请人： Seung-Yun Lee , Sangouk Ryu , Sung Min Yoon , Young Sam Park , Kyu-Jeong Choi , Nam-Yeal Lee , Byoung-Gon Yu
发明人： Seung-Yun Lee , Sangouk Ryu , Sung Min Yoon , Young Sam Park , Kyu-Jeong Choi , Nam-Yeal Lee , Byoung-Gon Yu
IPC分类号： H01L21/00
CPC分类号： H01L27/0635 , G11C13/0004 , G11C13/0069 , G11C2013/008 , G11C2213/79 , H01L21/8249 , H01L27/2445 , H01L45/06 , H01L45/126 , H01L45/143 , H01L45/144 , Y10S438/947
摘要： An embedded memory required for a high performance, multifunction SOC, and a method of fabricating the same are provided. The memory includes a bipolar transistor, a phase-change memory device and a MOS transistor, adjacent and electrically connected, on a substrate. The bipolar transistor includes a base composed of SiGe disposed on a collector. The phase-change memory device has a phase-change material layer which is changed from an amorphous state to a crystalline state by a current, and a heating layer composed of SiGe that contacts the lower surface of the phase-change material layer.
摘要翻译：提供了高性能多功能SOC所需的嵌入式存储器及其制造方法。存储器包括在衬底上相邻并电连接的双极晶体管，相变存储器件和MOS晶体管。双极晶体管包括由设置在集电极上的SiGe组成的基极。相变存储器件具有通过电流从非晶状态转变为结晶态的相变材料层和由与相变材料层的下表面接触的SiGe构成的加热层。

93. 发明申请

US20110198498A1 THERMOELECTRIC DEVICE AND METHOD OF FORMING THE SAME, TEMPERATURE SENSING SENSOR, AND HEAT-SOURCE IMAGE SENSOR USING THE SAME 失效
标题翻译：热电装置及其制造方法，温度感测传感器和使用其的热源图像传感器
公开(公告)号：US20110198498A1
公开(公告)日：2011-08-18
申请号：US12987459
申请日：2011-01-10
申请人： Young Sam Park , Moon Gyu Jang , Younghoon Hyun , Myungsim Jun , Sang Hoon Cheon , Taehyoung Zyung
发明人： Young Sam Park , Moon Gyu Jang , Younghoon Hyun , Myungsim Jun , Sang Hoon Cheon , Taehyoung Zyung
IPC分类号： H01L23/34 , H01L21/02 , H01J31/49 , G01K7/04 , B82Y99/00
CPC分类号： B82Y15/00 , H01L29/0665 , H01L35/32 , H01L2924/0002 , H04N5/33 , H01L2924/00
摘要： Provided are a thermoelectric device and a method of forming the same, a temperature sensing sensor, and a heat-source image sensor using the same. The thermoelectric device includes a first nanowire and a second nanowire, a first silicon thin film, a second silicon thin film, and a third silicon thin film. The first nanowire and a second nanowire are disposed on a substrate. The first nanowire and the second nanowire are separated from each other. The first silicon thin film is connected to one end of the first nanowire. The second silicon thin film is connected to one end of the second nanowire. The third silicon thin film is connected to the other ends of the first nanowire and the second nanowire. The first and second nanowires extend in a direction parallel to an upper surface of the substrate.
摘要翻译：提供了一种热电装置及其形成方法，温度感测传感器和使用该热电装置的热源图像传感器。热电装置包括第一纳米线和第二纳米线，第一硅薄膜，第二硅薄膜和第三硅薄膜。第一纳米线和第二纳米线设置在基底上。第一个纳米线和第二个纳米线彼此分离。第一硅薄膜连接到第一纳米线的一端。第二硅薄膜连接到第二纳米线的一端。第三硅薄膜连接到第一纳米线和第二纳米线的另一端。第一和第二纳米线在平行于衬底的上表面的方向上延伸。

94. 发明申请

US20100258780A1 PHASE-CHANGE RANDOM ACCESS MEMORY DEVICE AND METHOD OF MANUFACTURING THE SAME 有权
标题翻译：相变随机访问存储器件及其制造方法
公开(公告)号：US20100258780A1
公开(公告)日：2010-10-14
申请号：US12821414
申请日：2010-06-23
申请人： Seung-Yun Lee , Young Sam Park , Sung Min Yoon , Kyu-Jeong Choi , Nam-Yeal Lee , Byoung-Gon Yu
发明人： Seung-Yun Lee , Young Sam Park , Sung Min Yoon , Kyu-Jeong Choi , Nam-Yeal Lee , Byoung-Gon Yu
IPC分类号： H01L45/00
CPC分类号： H01L45/06 , H01L45/1233 , H01L45/126 , H01L45/144 , H01L45/1675 , H01L45/1683
摘要： Provided are a Phase-change Random Access Memory (PRAM) device and a method of manufacturing the same. In particular, a PRAM device including a heating layer, wherein the heating layer comprises first and second heating layers having different physical properties from each other and a method of manufacturing the same are provided. Since the PRAM device according to the present invention includes a heating layer having optimal heating characteristics, a PRAM device having high reliability and excellent operating characteristics can be manufactured.
摘要翻译：提供了一种相变随机存取存储器（PRAM）装置及其制造方法。特别地，包括加热层的PRAM装置及其制造方法，其中加热层包括彼此具有不同物理性质的第一和第二加热层。由于根据本发明的PRAM器件包括具有最佳加热特性的加热层，所以可以制造具有高可靠性和优异的工作特性的PRAM器件。

95. 发明申请

US20080219047A1 APPARATUS AND METHOD FOR WRITING DATA TO PHASE-CHANGE MEMORY BY USING POWER CALCULATION AND DATA INVERSION 有权
标题翻译：通过使用功率计算和数据反相将数据写入相变记忆的装置和方法
公开(公告)号：US20080219047A1
公开(公告)日：2008-09-11
申请号：US12040137
申请日：2008-02-29
申请人： Byoung-Gon YU , Byung-Do Yang , Seung-Yun Lee , Sung-Min Yoon , Young Sam Park , Nam Yeal Lee
发明人： Byoung-Gon YU , Byung-Do Yang , Seung-Yun Lee , Sung-Min Yoon , Young Sam Park , Nam Yeal Lee
IPC分类号： G11C7/00 , G11C11/21
CPC分类号： G11C7/1006 , G11C13/0004 , G11C13/0038 , G11C13/0069 , G11C2013/0076 , G11C2211/5647
摘要： Provided are an apparatus and method for writing data to a phase-change random access memory (PRAM) by using writing power calculation and data inversion functions, and more particularly, an apparatus and method for writing data which can minimize power consumption by calculating the power consumed while input original data or inverted data is written to a PRAM and storing the data consuming less power. A PRAM consumes a significant amount of power in order to store data in a memory cell since a large electric current is required to flow for a long period of time. According to the present invention, since the PRAM consumes different amounts of power when writing data with a value of 0 and data with a value of 1, the power consumed when input original data is stored and the power consumed when the input original data is inverted and stored are compared to each other, the data with a smaller power consumption is stored when the data is written to the PRAM as a word unit, and thus the power consumption of the PRAM can be reduced.
摘要翻译：提供了一种通过使用写入功率计算和数据反转功能将数据写入相变随机存取存储器（PRAM）的装置和方法，更具体地，涉及一种用于写入数据的装置和方法，该装置和方法可通过计算功率来最小化功耗在输入原始数据或反相数据被写入PRAM并存储消耗较少功率的数据时消耗。由于需要大电流长时间流动，所以PRAM消耗大量的功率以便将数据存储在存储单元中。根据本发明，由于在写入值为0的数据和值为1的数据时，PRAM消耗不同的功率量，所以当输入原始数据被存储时消耗的功率和当输入的原始数据被反相时消耗的功率并将其进行存储，将数据作为字单元写入PRAM时，存储具有较小功耗的数据，从而能够降低PRAM的功耗。

96. 发明授权

US07417891B2 Phase change memory device having semiconductor laser unit 有权
标题翻译：具有半导体激光器单元的相变存储器件
公开(公告)号：US07417891B2
公开(公告)日：2008-08-26
申请号：US11635279
申请日：2006-12-07
申请人： Byoung Gon Yu , Seung Yun Lee , Sangouk Ryu , Sung Min Yoon , Young Sam Park , Kyu Jeong Choi , Nam Yeal Lee
发明人： Byoung Gon Yu , Seung Yun Lee , Sangouk Ryu , Sung Min Yoon , Young Sam Park , Kyu Jeong Choi , Nam Yeal Lee
IPC分类号： G11C11/00
CPC分类号： H01L45/1213 , G11C13/0004 , G11C13/04 , H01L45/06 , H01L45/1226 , H01L45/144 , H01L45/1666
摘要： Provided is a phase change memory device including: a phase change memory unit comprising a phase change layer pattern; a laser beam focusing unit locally focusing a laser beam on the phase change layer pattern of the phase change memory unit; and a semiconductor laser unit generating and emitting the laser beam towards the laser beam focusing unit. Thus set or reset operations in the phase change memory device uses laser beams locally applied, thereby reducing the consumption power and preventing destruction or change in information stored in neighboring cell during the operations of unit cell.
摘要翻译：提供了一种相变存储器件，包括：相变存储器单元，包括相变层图案; 激光束聚焦单元将激光束局部聚焦在相变存储单元的相变层图案上; 以及向激光束聚焦单元产生并发射激光束的半导体激光器单元。因此，相变存储器件中的设定或复位操作使用局部施加的激光束，从而在单位电池的操作期间降低消耗功率并防止存储在相邻单元中的信息的破坏或改变。

97. 发明授权

US09029389B2 Anti-inflammation compounds 有权
标题翻译：抗炎化合物
公开(公告)号：US09029389B2
公开(公告)日：2015-05-12
申请号：US14112933
申请日：2012-04-20
申请人： Zaesung No , Jaeseung Kim , Sung-Jun Han , Jung Hwan Kim , Young Sam Park , Sangchul Lee , Kiyean Nam , Jeongjun Kim , Jinhwa Lee , Sunhee Kang , Min Jung Seo , Saeyeon Lee , Gahee Choi
发明人： Zaesung No , Jaeseung Kim , Sung-Jun Han , Jung Hwan Kim , Young Sam Park , Sangchul Lee , Kiyean Nam , Jeongjun Kim , Jinhwa Lee , Sunhee Kang , Min Jung Seo , Saeyeon Lee , Gahee Choi
IPC分类号： A61K31/4353 , C07D491/113 , C07D471/04 , C07D487/04 , C07D519/00
CPC分类号： C07D491/113 , A61K31/4353 , C07D471/04 , C07D487/04 , C07D519/00
摘要： The present invention refers to: a compound having the general formula (I), wherein n is 0, 1, 2 or; m is 0, 1, 2 or 3; o is 0, 1, 2 or 3; W, X, Y and Z are independently selected from CH, N or N-oxide; A is NR4, C═O, C═S, OP(O)(O), P═O, CH2, or a heteroarly selected from the group consisting of (a), (b), (c), (d), (e), (f), (g); V is C═O, O, S, CH2, or NR5; as well as its use in treating inflammatory diseases such as asthma, COPD, inflammation post infection, arthritis, atherosclerosis, pain and dermatitis.
摘要翻译：本发明涉及：具有通式（I）的化合物，其中n为0,1,2或; m为0,1,2或3; o为0,1,2或3; W，X，Y和Z独立地选自CH，N或N-氧化物; A是NR4，C = O，C≡S，OP（O）（O），P = O，CH2或杂原子选自（a），（b），（c），（d），（e），（f），（g）; V是C = O，O，S，CH 2或NR 5; 以及其用于治疗炎性疾病如哮喘，COPD，炎症后感染，关节炎，动脉粥样硬化，疼痛和皮炎的用途。

98. 发明授权

US07989793B2 Electrical device using phase change material, phase change memory device using solid state reaction and method for fabricating the same 有权
标题翻译：使用相变材料的电气装置，使用固态反应的相变存储装置及其制造方法
公开(公告)号：US07989793B2
公开(公告)日：2011-08-02
申请号：US12326776
申请日：2008-12-02
申请人： Seung Yun Lee , Young Sam Park , Sung Min Yoon , Soon Won Jung , Byoung Gon Yu
发明人： Seung Yun Lee , Young Sam Park , Sung Min Yoon , Soon Won Jung , Byoung Gon Yu
IPC分类号： H01L29/02
CPC分类号： H01L45/06 , H01L45/1233 , H01L45/144 , H01L45/148 , H01L45/1608 , H01L45/1666
摘要： Provided are a nonvolatile memory device and a method of fabricating the same, in which a phase-change layer is formed using a solid-state reaction to reduce a programmable volume, thereby lessening power consumption. The device includes a first reactant layer, a second reactant layer formed on the first reactant layer, and a phase-change layer formed between the first and second reactant layers due to a solid-state reaction between a material forming the first reactant layer and a material forming the second reactant layer. The phase-change memory device consumes low power and operates at high speed.
摘要翻译：提供了一种非易失性存储器件及其制造方法，其中使用固态反应形成相变层以减少可编程体积，从而降低功耗。该装置包括第一反应物层，形成在第一反应物层上的第二反应物层和由形成第一反应物层的材料与第一反应物层之间的固态反应形成在第一和第二反应物层之间的相变层形成第二反应物层的材料。相变存储器件消耗低功率并以高速运行。

99. 发明授权

US07855421B2 Embedded phase-change memory and method of fabricating the same 有权
标题翻译：嵌入式相变存储器及其制造方法
公开(公告)号：US07855421B2
公开(公告)日：2010-12-21
申请号：US11633216
申请日：2006-12-04
申请人： Seung-Yun Lee , Sangouk Ryu , Sung Min Yoon , Young Sam Park , Kyu-Jeong Choi , Nam-Yeal Lee , Byoung-Gon Yu
发明人： Seung-Yun Lee , Sangouk Ryu , Sung Min Yoon , Young Sam Park , Kyu-Jeong Choi , Nam-Yeal Lee , Byoung-Gon Yu
IPC分类号： H01L29/66
CPC分类号： H01L27/0635 , G11C13/0004 , G11C13/0069 , G11C2013/008 , G11C2213/79 , H01L21/8249 , H01L27/2445 , H01L45/06 , H01L45/126 , H01L45/143 , H01L45/144 , Y10S438/947
摘要： An embedded memory required for a high performance, multifunction SOC, and a method of fabricating the same are provided. The memory includes a bipolar transistor, a phase-change memory device and a MOS transistor, adjacent and electrically connected, on a substrate. The bipolar transistor includes a base composed of SiGe disposed on a collector. The phase-change memory device has a phase-change material layer which is changed from an amorphous state to a crystalline state by a current, and a heating layer composed of SiGe that contacts the lower surface of the phase-change material layer.
摘要翻译：提供了高性能多功能SOC所需的嵌入式存储器及其制造方法。存储器包括在衬底上相邻并电连接的双极晶体管，相变存储器件和MOS晶体管。双极晶体管包括由设置在集电极上的SiGe组成的基极。相变存储器件具有通过电流从非晶状态转变为结晶态的相变材料层和由与相变材料层的下表面接触的SiGe构成的加热层。

100. 发明授权

US07767994B2 Phase-change random access memory device and method of manufacturing the same 有权
标题翻译：相变随机存取存储器件及其制造方法
公开(公告)号：US07767994B2
公开(公告)日：2010-08-03
申请号：US11951148
申请日：2007-12-05
申请人： Seung-Yun Lee , Young Sam Park , Sung Min Yoon , Kyu-Jeong Choi , Nam-Yeal Lee , Byoung-Gon Yu
发明人： Seung-Yun Lee , Young Sam Park , Sung Min Yoon , Kyu-Jeong Choi , Nam-Yeal Lee , Byoung-Gon Yu
IPC分类号： H01L45/00
CPC分类号： H01L45/06 , H01L45/1233 , H01L45/126 , H01L45/144 , H01L45/1675 , H01L45/1683
摘要： Provided are a Phase-change Random Access Memory (PRAM) device and a method of manufacturing the same. In particular, a PRAM device including a heating layer, wherein the heating layer comprises first and second heating layers having different physical properties from each other and a method of manufacturing the same are provided. Since the PRAM device according to the present invention includes a heating layer having optimal heating characteristics, a PRAM device having high reliability and excellent operating characteristics can be manufactured.
摘要翻译：提供了一种相变随机存取存储器（PRAM）装置及其制造方法。特别地，包括加热层的PRAM装置及其制造方法，其中加热层包括彼此具有不同物理性质的第一和第二加热层。由于根据本发明的PRAM器件包括具有最佳加热特性的加热层，所以可以制造具有高可靠性和优异的工作特性的PRAM器件。

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