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    • 93. 发明授权
    • Semiconductor integrated circuit equipment with asynchronous operation
    • 具有异步操作的半导体集成电路设备
    • US06901026B2
    • 2005-05-31
    • US10366418
    • 2003-02-14
    • Yoshiaki TakeuchiShinichiro ShiratakeKohei Oikawa
    • Yoshiaki TakeuchiShinichiro ShiratakeKohei Oikawa
    • G11C8/06G11C8/18G11C11/22G11C11/403G11C11/406G11C11/408G11C8/00
    • G11C11/40615G11C8/06G11C8/18G11C11/22G11C11/406
    • A semiconductor integrated circuit device includes a memory, /CE transition detector, address transition detector, /WE transition detector and controller. The controller includes a timeout circuit. The timeout circuit generates an internal circuit control signal with preset width to control access to the memory based on detection results of the above transition detectors. The operation of the memory is controlled by the timeout circuit at the read time. The operation of the memory is controlled by the timeout circuit when transition of the end of a /WE signal is detected by the /WE transition detector before a timing specified by the timeout circuit at the write time. Further, the operation of the memory is controlled in response to the transition of the /WE signal when the transition of the end of the /WE signal is detected by the /WE transition detector after passage of the above timing.
    • 半导体集成电路器件包括存储器/ CE转换检测器,地址转换检测器,/ WE转换检测器和控制器。 控制器包括一个超时电路。 超时电路根据上述转换检测器的检测结果生成具有预设宽度的内部电路控制信号,以控制对存储器的访问。 存储器的操作由读取时的超时电路控制。 当在写入时间由超时电路指定的定时之前,由/ WE转换检测器检测到/ WE信号的结束的转换时,存储器的操作由超时电路控制。 此外,当在上述定时经过之后,当/ WE信号的结束的转变被/ WE转换检测器检测到时,响应于/ WE信号的转变来控制存储器的操作。
    • 95. 发明授权
    • Chain-type ferroelectric random access memory (FRAM) with rewrite transistors coupled between a sense amplifier and a bit line pair
    • 具有耦合在读出放大器和位线对之间的重写晶体管的链式铁电随机存取存储器(FRAM)
    • US06552922B2
    • 2003-04-22
    • US10228067
    • 2002-08-27
    • Ryu OgiwaraDaisaburo TakashimaSumio TanakaYukihito OowakiYoshiaki Takeuchi
    • Ryu OgiwaraDaisaburo TakashimaSumio TanakaYukihito OowakiYoshiaki Takeuchi
    • G11C1122
    • G11C11/22
    • A chain type ferroelectric random access memory has a memory cell unit comprising ferroelectric memory cells electrically connected in series to each other, a plate line connected to an electrode of the memory cell unit, a bit line connected to the other electrode of the memory cell unit via a switching transistor, a sense amplifier which amplifies the voltages of this bit line and its complementary bit line, and a transistor inserted between the switching transistor and the sense amplifier, and that a value, being the minimum value of the gate voltage in the transistor obtained during elevation of the plate line voltage and comparative amplification, is smaller than a value, being the maximum value of the gate voltage in the transistor obtained during fall of the plate line voltage and comparative amplification. With these features, decrease in the accumulated charge of polarization in the memory cell is reduced and occurrence of disturb is prevented during read/write operations.
    • 链式铁电随机存取存储器具有包括彼此串联电连接的铁电存储单元的存储单元单元,连接到存储单元单元的电极的板线,连接到存储单元单元的另一个电极的位线 通过开关晶体管,放大该位线及其互补位线的电压的读出放大器以及插在开关晶体管和读出放大器之间的晶体管,并且作为栅极电压的最小值 在板线电压升高和比较放大期间获得的晶体管的晶体管小于作为板线电压下降期间获得的晶体管中的栅极电压的最大值和比较放大的值。 利用这些特征,存储单元中的累积电荷的减小减少,并且在读/写操作期间阻止了干扰的发生。
    • 97. 发明授权
    • Chain type ferroelectric memory with isolation transistors coupled between a sense amplifier and an equalization circuit
    • 链式铁电存储器,其具有耦合在读出放大器和均衡电路之间的隔离晶体管
    • US06473330B1
    • 2002-10-29
    • US09585081
    • 2000-06-01
    • Ryu OgiwaraDaisaburo TakashimaSumio TanakaYukihito OowakiYoshiaki Takeuchi
    • Ryu OgiwaraDaisaburo TakashimaSumio TanakaYukihito OowakiYoshiaki Takeuchi
    • G11C1122
    • G11C11/22
    • A chain type ferroelectric random access memory has a memory cell unit comprising ferroelectric memory cells electrically connected in series to each other, a plate line connected to an electrode of the memory cell unit, a bit line connected to the other electrode of the memory cell unit via a switching transistor, a sense amplifier which amplifies the voltages of this bit line and its complementary bit line, and a transistor inserted between the switching transistor and the sense amplifier, and that a value, being the minimum value of the gate voltage in the transistor obtained during elevation of the plate line voltage and comparative amplification, is smaller than a value, being the maximum value of the gate voltage in the transistor obtained during fall of the plate line voltage and comparative amplification. With these features, decrease in the accumulated charge of polarization in the memory cell is reduced and occurrence of disturb is prevented during read/write operations.
    • 链式铁电随机存取存储器具有包括彼此串联电连接的铁电存储单元的存储单元单元,连接到存储单元单元的电极的板线,连接到存储单元单元的另一个电极的位线 通过开关晶体管,放大该位线及其互补位线的电压的读出放大器以及插在开关晶体管和读出放大器之间的晶体管,并且作为栅极电压的最小值 在板线电压升高和比较放大期间获得的晶体管的晶体管小于作为板线电压下降期间获得的晶体管中的栅极电压的最大值和比较放大的值。 利用这些特征,存储单元中的累积电荷的减小减少,并且在读/写操作期间阻止了干扰的发生。
    • 100. 发明授权
    • Tilt sensor
    • 倾斜传感器
    • US06442855B2
    • 2002-09-03
    • US09790657
    • 2001-02-23
    • Yoshiaki TakeuchiHiroshi Kawamoto
    • Yoshiaki TakeuchiHiroshi Kawamoto
    • G01C906
    • G01C9/06G01C9/20G01C2009/062G01C2009/185
    • A tilt angle sensor is disclosed that is capable of detecting whether a tilt angle of a reference plane exceeds a predetermined value by means of only one threshold value. Although only one threshold value is used, the tilt angle can be measured with respect to either a clockwise or a counterclockwise direction from the untilted state. A pair of differential electrodes electrically independent of each other are formed in a shape symmetric with respect to upper and lower sections of a printed circuit board. A common electrode plate is mounted opposed to the pair of differential electrodes with a predetermined gap therebetween. The pair of differential electrodes and the common electrode is stored in a closed space formed by the printed circuit board and an oil case. A dielectric liquid is filled into the closed space in such a way that the level of the liquid varies according to the tilt of the reference plane. An output signal corresponding to the difference in capacity between two capacitors formed by associated components is produced as a tilt detection output.
    • 公开了一种能够通过仅一个阈值检测参考平面的倾斜角是否超过预定值的倾斜角度传感器。 虽然仅使用一个阈值,但是可以相对于从直到状态的顺时针或逆时针方向测量倾斜角度。 彼此电独立的一对差动电极形成为相对于印刷电路板的上部和下部对称的形状。 公共电极板与一对差动电极相对地安装在其间具有预定的间隙。 一对差动电极和公共电极存储在由印刷电路板和油箱形成的封闭空间中。 电介质液体以这样的方式填充到封闭空间中,使得液体的水平根据参考平面的倾斜而变化。 产生与由相关部件形成的两个电容器之间的电容差对应的输出信号作为倾斜检测输出。