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91. 发明授权

US08962365B2 Method of manufacturing GaN-based film and composite substrate used therefor 有权
标题翻译：制造用于其的GaN基膜和复合基板的方法
公开(公告)号：US08962365B2
公开(公告)日：2015-02-24
申请号：US13696873
申请日：2011-12-21
申请人： Issei Satoh , Yuki Seki , Koji Uematsu , Yoshiyuki Yamamoto , Hideki Matsubara , Shinsuke Fujiwara , Masashi Yoshimura
发明人： Issei Satoh , Yuki Seki , Koji Uematsu , Yoshiyuki Yamamoto , Hideki Matsubara , Shinsuke Fujiwara , Masashi Yoshimura
IPC分类号： H01L21/00 , H01L21/02 , C30B23/02 , C30B25/18 , C30B29/40
CPC分类号： H01L21/0254 , C03C10/0018 , C04B35/106 , C04B35/16 , C04B35/185 , C04B35/481 , C04B35/486 , C04B35/488 , C04B35/645 , C04B35/6455 , C04B2235/3225 , C04B2235/3244 , C04B2235/3246 , C04B2235/3463 , C04B2235/9607 , C30B23/025 , C30B25/183 , C30B29/406 , H01L21/02002 , H01L21/02422 , H01L21/02436 , H01L21/02458 , H01L21/02658 , H01L21/02664
摘要： The present method of manufacturing a GaN-based film includes the steps of preparing a composite substrate including a support substrate dissoluble in hydrofluoric acid and a single crystal film arranged on a side of a main surface of the support substrate, a coefficient of thermal expansion in the main surface of the support substrate being more than 0.8 time and less than 1.2 times as high as a coefficient of thermal expansion of GaN crystal, forming a GaN-based film on a main surface of the single crystal film arranged on the side of the main surface of the support substrate, and removing the support substrate by dissolving the support substrate in hydrofluoric acid. Thus, the method of manufacturing a GaN-based film capable of efficiently obtaining a GaN-based film having a large main surface area, less warpage, and good crystallinity, as well as a composite substrate used therefor are provided.
摘要翻译：本发明的制造GaN基膜的方法包括以下步骤：制备复合基板，该复合基板包括可溶于氢氟酸的支撑基板和布置在支撑基板的主表面侧的单晶膜，热膨胀系数支撑基板的主表面比GaN晶体大0.8倍以上且小于热膨胀系数的1.2倍，在配置在该基板侧的单晶膜的主面上形成GaN基膜支撑基板的主表面，并且通过将支撑基板溶解在氢氟酸中来除去支撑基板。因此，提供了能够有效地获得具有较大主表面积，较少翘曲和良好结晶度的GaN基膜的GaN基膜的制造方法以及用于其的复合基板。

92. 发明授权

US08829658B2 Method of manufacturing nitride substrate, and nitride substrate 有权
标题翻译：氮化物衬底和氮化物衬底的制造方法
公开(公告)号：US08829658B2
公开(公告)日：2014-09-09
申请号：US13061307
申请日：2009-08-26
申请人： Satoshi Arakawa , Michimasa Miyanaga , Takashi Sakurada , Yoshiyuki Yamamoto , Hideaki Nakahata
发明人： Satoshi Arakawa , Michimasa Miyanaga , Takashi Sakurada , Yoshiyuki Yamamoto , Hideaki Nakahata
IPC分类号： H01L29/04 , C30B25/00 , C30B29/40 , C30B33/00
CPC分类号： H01L21/02021 , C30B25/00 , C30B29/403 , C30B29/406 , C30B33/00 , H01L21/02013 , H01L21/02389
摘要： A method of manufacturing a nitride substrate includes the following steps. Firstly, a nitride crystal is grown. Then, the nitride substrate including a front surface is cut from the nitride crystal. In the step of cutting, the nitride substrate is cut such that an off angle formed between an axis orthogonal to the front surface and an m-axis or an a-axis is greater than zero. When the nitride crystal is grown in a c-axis direction, in the step of cutting, the nitride substrate is cut from the nitride crystal along a flat plane which passes through a front surface and a rear surface of the nitride crystal and does not pass through a line segment connecting a center of a radius of curvature of the front surface with a center of a radius of curvature of the rear surface of the nitride crystal.
摘要翻译：制造氮化物衬底的方法包括以下步骤。首先，生长氮化物晶体。然后，从氮化物晶体切割包括前表面的氮化物衬底。在切割步骤中，切割氮化物衬底，使得在与正面正交的轴与m轴或a轴之间形成的偏角大于零。当氮化物晶体沿c轴方向生长时，在切割步骤中，沿着通过氮化物晶体的前表面和后表面的平坦平面从氮化物晶体切割氮化物衬底，并且不通过通过将前表面的曲率半径的中心与氮化物晶体的后表面的曲率半径的中心连接的线段。

93. 发明授权

US08697550B2 Method of manufacturing GaN-based film 有权
标题翻译：制造GaN基膜的方法
公开(公告)号：US08697550B2
公开(公告)日：2014-04-15
申请号：US13643206
申请日：2011-11-10
申请人： Issei Satoh , Yuki Seki , Koji Uematsu , Yoshiyuki Yamamoto , Hideki Matsubara , Shinsuke Fujiwara , Masashi Yoshimura
发明人： Issei Satoh , Yuki Seki , Koji Uematsu , Yoshiyuki Yamamoto , Hideki Matsubara , Shinsuke Fujiwara , Masashi Yoshimura
IPC分类号： H01L21/20
CPC分类号： H01L33/007 , H01L21/76256 , H01L33/0079
摘要： The present method of manufacturing a GaN-based film includes the steps of preparing a composite substrate, the composite substrate including a support substrate in which a coefficient of thermal expansion in a main surface is more than 0.8 time and less than 1.2 times as high as a coefficient of thermal expansion of GaN crystal in a direction of a axis and a single crystal film arranged on a side of the main surface of the support substrate, the single crystal film having threefold symmetry with respect to an axis perpendicular to a main surface of the single crystal film, and forming a GaN-based film on the main surface of the single crystal film in the composite substrate. Thus, a method of manufacturing a GaN-based film capable of manufacturing a GaN-based film having a large main surface area and less warpage is provided.
摘要翻译：本发明的制造GaN基膜的方法包括以下步骤：制备复合基板，该复合基板包括主表面的热膨胀系数大于0.8倍且小于1.2倍的支撑基板 GaN晶体沿轴向的热膨胀系数和布置在支撑基板的主表面侧的单晶膜，单晶膜相对于垂直于主表面的轴线具有三重对称性单晶膜，并且在复合衬底中的单晶膜的主表面上形成GaN基膜。因此，提供了一种制造能够制造具有大的主表面积和较少翘曲的GaN基膜的GaN基膜的方法。

94. 发明授权

US08658527B2 Method of manufacturing GaN-based film 有权
公开(公告)号：US08658527B2
公开(公告)日：2014-02-25
申请号：US13283963
申请日：2011-10-28
申请人： Shinsuke Fujiwara , Koji Uematsu , Yoshiyuki Yamamoto , Issei Satoh
发明人： Shinsuke Fujiwara , Koji Uematsu , Yoshiyuki Yamamoto , Issei Satoh
IPC分类号： H01L21/28 , H01L21/3205
摘要： A method of manufacturing a GaN-based film includes the steps of preparing a composite substrate, the composite substrate including a support substrate in which a coefficient of thermal expansion in its main surface is more than 0.8 time and less than 1.0 time as high as a coefficient of thermal expansion of GaN crystal in a direction of a axis and a single crystal film arranged on a main surface side of the support substrate, the single crystal film having threefold symmetry with respect to an axis perpendicular to a main surface of the single crystal film, and forming a GaN-based film on the main surface of the single crystal film in the composite substrate, the single crystal film in the composite substrate being an SiC film. Thus, a method of manufacturing a GaN-based film capable of manufacturing a GaN-based film having a large main surface area and less warpage without crack being produced in a substrate is provided.

95. 发明授权

US08653561B2 III-nitride semiconductor electronic device, and method of fabricating III-nitride semiconductor electronic device 有权
标题翻译： III族氮化物半导体电子器件，以及III族氮化物半导体电子器件的制造方法
公开(公告)号：US08653561B2
公开(公告)日：2014-02-18
申请号：US13038071
申请日：2011-03-01
申请人： Shin Hashimoto , Katsushi Akita , Yoshiyuki Yamamoto , Masaaki Kuzuhara , Norimasa Yafune
发明人： Shin Hashimoto , Katsushi Akita , Yoshiyuki Yamamoto , Masaaki Kuzuhara , Norimasa Yafune
IPC分类号： H01L21/02 , H01L29/778 , H01L21/335
CPC分类号： H01L29/66462 , H01L21/0237 , H01L21/0242 , H01L21/02458 , H01L21/02507 , H01L21/0254 , H01L29/2003 , H01L29/7787
摘要： A III-nitride semiconductor electronic device comprises a semiconductor laminate provided on a primary surface of a substrate, a first electrode in contact with the semiconductor laminate, and a second electrode. The semiconductor laminate includes a channel layer and a barrier layer making a junction with the channel layer. The channel layer comprises first III-nitride semiconductor containing aluminum as a Group III constituent element, and the barrier layer comprises second III-nitride semiconductor containing aluminum as a Group III constituent element. The semiconductor laminate including first, second and third regions arranged along the primary surface, and the third region is located between the first region and the second region. The barrier layer includes first to third portions included in the first to third regions, respectively. A concentration of impurity in the first portion is the same as that of impurity in the second portion, and the first and second electrodes is provided on the first and second regions, respectively. The first electrode includes a drain electrode or a source electrode. An aluminum composition of the first III-nitride semiconductor is not less than 0.16, and a bandgap of the second III-nitride semiconductor being larger than that of the first III-nitride semiconductor.
摘要翻译： III族氮化物半导体电子器件包括设置在衬底的主表面上的半导体层叠体，与半导体层叠体接触的第一电极和第二电极。半导体层叠体包括沟道层和与沟道层形成结的阻挡层。沟道层包括含有铝作为III族构成元素的第一III族氮化物半导体，并且阻挡层包含含有铝作为III族构成元素的第二III族氮化物半导体。包括沿主表面布置的第一，第二和第三区域以及第三区域的半导体层叠体位于第一区域和第二区域之间。阻挡层包括分别包括在第一至第三区域中的第一至第三部分。第一部分中的杂质浓度与第二部分中的杂质浓度相同，第一和第二电极分别设置在第一和第二区域上。第一电极包括漏电极或源电极。第一III族氮化物半导体的铝组成不小于0.16，并且第二III族氮化物半导体的带隙大于第一III族氮化物半导体的带隙。

96. 发明授权

US08613802B2 Nitride semiconductor crystal manufacturing apparatus, nitride semiconductor crystal manufacturing method, and nitride semiconductor crystal 失效
标题翻译：氮化物半导体晶体制造装置，氮化物半导体晶体制造方法和氮化物半导体晶体
公开(公告)号：US08613802B2
公开(公告)日：2013-12-24
申请号：US13060276
申请日：2010-01-20
申请人： Issei Satoh , Michimasa Miyanaga , Yoshiyuki Yamamoto , Hideaki Nakahata
发明人： Issei Satoh , Michimasa Miyanaga , Yoshiyuki Yamamoto , Hideaki Nakahata
IPC分类号： C30B23/06
CPC分类号： C30B23/066 , C30B29/403
摘要： Affords nitride semiconductor crystal manufacturing apparatuses that are durable and that are for manufacturing nitride semiconductor crystal in which the immixing of impurities from outside the crucible is kept under control, and makes methods for manufacturing such nitride semiconductor crystal, and the nitride semiconductor crystal itself, available. A nitride semiconductor crystal manufacturing apparatus (100) is furnished with a crucible (101), a heating unit (125), and a covering component (110). The crucible (101) is where, interiorly, source material (17) is disposed. The heating unit (125) is disposed about the outer periphery of the crucible (101), where it heats the crucible (101) interior. The covering component (110) is arranged in between the crucible (101) and the heating unit (125). The covering component (110) includes a first layer (111) formed along the side opposing the crucible (101), and made of a metal whose melting point is higher than that of the source material (17), and a second layer (112) formed along the outer periphery of the first layer (111), and made of a carbide of the metal that constitutes the first layer (111).
摘要翻译：使氮化物半导体晶体制造装置耐久，并且用于制造氮化物半导体晶体，其中坩埚外部杂质的固定被控制，并且制造这种氮化物半导体晶体的方法和氮化物半导体晶体本身可用。氮化物半导体晶体制造装置（100）具有坩埚（101），加热单元（125）和覆盖部件（110）。坩埚（101）内部设置有源材料（17）。加热单元（125）围绕坩埚（101）的外周设置，其中坩埚（101）内部加热。覆盖部件（110）布置在坩埚（101）和加热单元（125）之间。覆盖部件（110）包括沿与坩埚（101）相对的一侧形成的由熔点高于源材料（17）的金属制成的第一层（111）和第二层（112））沿着第一层（111）的外周形成，并且由构成第一层（111）的金属的碳化物构成。

97. 发明申请

US20130040442A1 METHOD OF MANUFACTURING GaN-BASED FILM 有权
标题翻译：制造GaN基膜的方法
公开(公告)号：US20130040442A1
公开(公告)日：2013-02-14
申请号：US13643206
申请日：2011-11-10
申请人： Issei Satoh , Yuki Seki , Koji Uematsu , Yoshiyuki Yamamoto , Hideki Matsubara , Shinsuke Fujiwara , Masashi Yoshimura
发明人： Issei Satoh , Yuki Seki , Koji Uematsu , Yoshiyuki Yamamoto , Hideki Matsubara , Shinsuke Fujiwara , Masashi Yoshimura
IPC分类号： H01L21/20
CPC分类号： H01L33/007 , H01L21/76256 , H01L33/0079
摘要： The present method of manufacturing a GaN-based film includes the steps of preparing a composite substrate, the composite substrate including a support substrate in which a coefficient of thermal expansion in a main surface is more than 0.8 time and less than 1.2 times as high as a coefficient of thermal expansion of GaN crystal in a direction of a axis and a single crystal film arranged on a side of the main surface of the support substrate, the single crystal film having threefold symmetry with respect to an axis perpendicular to a main surface of the single crystal film, and forming a GaN-based film on the main surface of the single crystal film in the composite substrate. Thus, a method of manufacturing a GaN-based film capable of manufacturing a GaN-based film having a large main surface area and less warpage is provided.
摘要翻译：本发明的制造GaN基膜的方法包括以下步骤：制备复合基板，该复合基板包括主表面的热膨胀系数大于0.8倍且小于1.2倍的支撑基板 GaN晶体沿轴向的热膨胀系数和布置在支撑基板的主表面侧的单晶膜，单晶膜相对于垂直于主表面的轴线具有三重对称性单晶膜，并且在复合衬底中的单晶膜的主表面上形成GaN基膜。因此，提供了一种制造能够制造具有大的主表面积和较少翘曲的GaN基膜的GaN基膜的方法。

98. 发明授权

US08367577B2 Thin film of aluminum nitride and process for producing the thin film of aluminum nitride 有权
标题翻译：氮化铝薄膜及其生产氮化铝薄膜的工艺
公开(公告)号：US08367577B2
公开(公告)日：2013-02-05
申请号：US12602104
申请日：2009-02-18
申请人： Issei Satoh , Naho Mizuhara , Keisuke Tanizaki , Michimasa Miyanaga , Takashi Sakurada , Yoshiyuki Yamamoto , Hideaki Nakahata
发明人： Issei Satoh , Naho Mizuhara , Keisuke Tanizaki , Michimasa Miyanaga , Takashi Sakurada , Yoshiyuki Yamamoto , Hideaki Nakahata
IPC分类号： C04B35/581
CPC分类号： C30B29/403 , C23C14/0641 , C23C14/28 , C30B23/02
摘要： Flat, thin AlN membranes and methods of their manufacture are made available. An AlN thin film (2) contains between 0.001 wt. % and 10 wt. % additive atomic element of one or more type selected from Group-III atoms, Group-IV atoms and Group-V atoms. Onto a base material (1), the AlN thin film (2) is formable utilizing a plasma generated by setting inside a vacuum chamber a sintered AlN ceramic containing between 0.001 wt. % and 10 wt. % additive atomic element of one or more type selected from Group-III atoms, Group-IV atoms and Group-V atoms, and with the base material having been set within the vacuum chamber, irradiating the sintered AlN ceramic with a laser.
摘要翻译：扁平，薄的AlN膜及其制造方法可用。 AlN薄膜（2）含有0.001重量％％和10wt。选自III族原子，IV族原子和V族原子的一种或多种类型的添加剂原子元素。在基材（1）上，AlN薄膜（2）可利用通过在真空室内设置包含0.001重量％的烧结AlN陶瓷而产生的等离子体，％和10wt。选自III族原子，IV族原子和V族原子的一种或多种类型的添加剂原子元素，并将基材设置在真空室内，用激光照射烧结的AlN陶瓷。

99. 发明申请

US20120228612A1 COMPOSITE BASE INCLUDING SINTERED BASE AND BASE SURFACE FLATTENING LAYER, AND COMPOSITE SUBSTRATE INCLUDING THAT COMPOSITE BASE AND SEMICONDUCTOR CRYSTALLINE LAYER 有权
标题翻译：复合基底包括烧结基体和基体表面平坦层，以及包括复合基体和半导体晶体层的复合基材
公开(公告)号：US20120228612A1
公开(公告)日：2012-09-13
申请号：US13107241
申请日：2011-05-13
申请人： Yuki Seki , Issei Satoh , Koji Uematsu , Yoshiyuki Yamamoto
发明人： Yuki Seki , Issei Satoh , Koji Uematsu , Yoshiyuki Yamamoto
IPC分类号： H01L29/04 , B32B3/00 , H01L29/06
CPC分类号： H01L29/02 , B32B2264/102 , B32B2307/704 , B32B2457/14 , H01L21/76254 , H01L27/1214 , H01L27/1266 , Y10T428/24355
摘要： A composite base of the present invention includes a sintered base and a base surface flattening layer disposed on the sintered base, and the base surface flattening layer has a surface RMS roughness of not more than 1.0 nm. A composite substrate of the present invention includes the composite base and a semiconductor crystal layer disposed on a side of the composite base where the base surface flattening layer is located, and a difference between a thermal expansion coefficient of the sintered base and a thermal expansion coefficient of the semiconductor crystal layer is not more than 4.5×10−6K−1. Thereby, a composite substrate in which a semiconductor crystal layer is attached to a sintered base, and a composite base suitably used for that composite substrate are provided.
摘要翻译：本发明的复合基材包括烧结基体和设置在烧结基体上的基面平坦化层，基面平坦化层的表面RMS粗糙度不大于1.0nm。本发明的复合基板包括复合基材和设置在复合基材的位于基面平坦化层的一侧的半导体晶体层，烧结基体的热膨胀系数与热膨胀系数之差的半导体晶体层不超过4.5×10-6K-1。由此，提供将半导体结晶层附着在烧结基体上的复合基板和适合用于该复合基板的复合基材。

100. 发明授权

US07902734B2 Electron emission element and electron emission element fabrication method 失效
标题翻译：电子发射元件和电子发射元件制造方法
公开(公告)号：US07902734B2
公开(公告)日：2011-03-08
申请号：US11883323
申请日：2006-09-21
申请人： Yoshiyuki Yamamoto , Natsuo Tatsumi , Yoshiki Nishibayashi , Takahiro Imai
发明人： Yoshiyuki Yamamoto , Natsuo Tatsumi , Yoshiki Nishibayashi , Takahiro Imai
IPC分类号： H01J1/304
CPC分类号： H01J1/3044 , H01J9/025
摘要： An electron emitting device 2 comprises an electron emitting portion 6 made of diamond. At an electron emission current value of 10 μA or more, a deviation of the electron emission current value over one hour is within ±20% in the electron emitting device 2. The number of occurrence of step-like noise changing the electron emission current value stepwise is once or less per 10 minutes.
摘要翻译：电子发射器件2包括由金刚石制成的电子发射部分6。在电子发射电流值为10μA以上的情况下，电子发射器件2中的电子发射电流值在1小时内的偏差在±20％以内。电子发射电流值变化的阶梯状噪声的发生次数每10分钟一步或一次。

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